* ESM7545D(V) 600} 450] 75 2.5 73]1500 |5a0 | tac 0.41 ISOTOP * ESMT5070D(V) 1000) 700) 50 3.0 50] 500 [15am | 3am 0.41 ISOTOP * MJ10004 400} 350] 20 1.90 | 10.00 | 400 |1.5 0.5 1 TO -3 823 MJ10004P 400} 350} 20 1.90 | 10.00 | 400 |1.5 0.5 1 TO - 218 823 MJ10004PFI 400} 350} 20 1.90 | 10.00 | 400 |1.5 0.5 2.08 | ISOWATT218 | 823 MJ10005 450} 400} 20 1.90 | 10.00 | 400 |1.5 0.5 1 TO -3 823 MJ10005P 450) 400] 20 1.90 | 10.00 | 400 |1.5 0.5 1 TO - 218 823 MJ10005PFI 450) 400| 20 1,90 | 10.00 | 400 |1.5 0.5 2.08 | ISOWATT218 | 823 MJ13335 800} 500; 20 1.8 | 10.00 | 2000 TO -3 * MJE340 MJE350 | 300/300) 0.5 6 SOT - 32 837 MJE340T MJE350T| 300/300) 0.5 6 TO - 220 837 MJE350 MJE340 | 300/300! 0.5 6 SOT - 32 837 MJE350T MJE340T; 300/300} 0.5 6 TO - 220 837 MJE3439 450) 350) 0.3} 0.50 | 0.05 4 8.33 | SOT - 32 855 MJE3440 350} 250} 0.3) 0.50 | 0.05 4 8.33} SOT - 32 855 MJE13004 600/300; 4 1.00 | 4.00 | 1000 |4 0.9 1.67) TO-220 859 MJE13005 700] 400; 4 1.0 4.00 | 1000 |4 0.9 1.67} TO- 220 859 MJE13006 600]
MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated speed-up diode. They are mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully iso- lated package. They are designed for high power, fast switching ap- plications. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM R1 Typ. 250 2 R2 Typ. 500 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter MJ10004/4P/4PFI | MJ10005/5P/5PFI Unit Vcex | Collector-emitter Voltage (Vee = 5V) 350 400 Vv Vcev | Collector-emitter Voltage (Vgc = 1.5V) 400 450 Vv Vceo Collector-emitter Voltage (lp = 0) 450 500 v VEBO Emitter-base Voltage (Ic = 0) 8 Vv Ie Collector Current 20 A lom Collector Peak Current 30 A Ig Base Current 25 A Ibu Base Peak Current 5 A TO-3 TO-218 |ISOWATT218 Prot Total Power Dissipation at T, < 25C 175 125 60 Ww Tstg Storage Temperature 65 to 200/- 65 to 150] 65 ta 150 ne} Tj Max. Operating Junction Temperature 200 150 150 C December 1988 1/2 823MJ10004/04P/04P i-Mie *Q0US/09
MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated speed-up diode. They are mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully iso- lated package. They are designed for high power, fast switching ap- plications. ABSOLUTE MAXIMUM RATINGS [SOWATT218 INTERNAL SCHEMATIC DIAGRAM Ri Typ. 2500 R2 Typ. 500 2 Symbol Parameter MJTQ004/4P/4PF1 | MJ10C05/5P/SPFI | Unit Voex Collector-emitter Voltage (Vac = 5V} 350 400 v Voev Collecior-emitter Voliage (Vee = 1.5V) 400 450 v Voeo | Collector-emitter Voltage {lg = 0) 450 500 Veao | Emitter-base Voltage {Io = 0) 8 Vv Io Collector Current 20 A low Collector Peak Current 30 A le Base Current 2.5 A isu Base Peak Current 5 A TQ-3 TO-218 |[SOWATT218 Prot Total Power Dissipation at T, < 25C 175 125 60 W Tstg Storage Temperature 65 to 200}- 65 ta 150) - 65 ta 150 SC Ty Max. Operating Junction Temperaiure 200 450 150 C December 1988 8 . 1/2 823MJ10004/04P/04PFI-MJ10005/05
| ama) | (us) | tus) [(ecrmy) 288 Page 400 | 350 | 15 BUW42PF1; 1.50 | 10.00 | 3000} 1.5 0.6 1.92 |ISOWATT218] 593 400 | 350 | 20 MJ10004 1.90 | 10.00 400} 1.5 0.5 1 TO-3 823 400 | 350 | 20 MJ10004P 1.90 | 10.00 400] 1.5 0.5 4 TO - 218 823 400 | 350 | 20 |MJ10004PFI 1.90 | 10.00 400] 1.5 0.5 2.08 |ISOWATT218] 823 450 | 300} 8 |2N6671 1.00 5.00 | 1000] 2.5 0.4 1.17 TO-3 1167 450 | 300 | 8 |2N6928 1.00 8.00 | 1600] 2.5 0.4 1.25 TO - 220 * 450 | 300/10 |2N6931 4.00 | 10.00 | 2000) 2.5 0.5 0.83 TO - 218 1181 450 | 300 | 15 | 2N6674 1.00 | 10.00 | 2000} 2.5 0.5 1 TO-3 1171 450 | 300 |15 |2N6676 1.00 | 15.00 | 3000} 2.5 0.5 1 TO-3 1175 450 | 300 | 15 |2N6933 1.00 | 15.00 | 3000) 2.5 0.5 0.71 TO - 218 1185 450 | 350 | 0.3|MJE3439 050 | 005; 4 3.33} sOT-32 | 855 450 | 350 | 0.3/SGS3439 050 0.05! 4 8.33 | SOT-82 | 855 450 | 350} 1 |2N3439 050 | 0.05; 4 175 | To-39 | 1043 450 | 350 | 1 |TIP49 1.00 1.00 200] 1.30 |0.45e} 3.12 TO - 220 1005 450 | 350] 5 | 2N6499 1.50 2.50 500| 1.8 10.8 1.56 TO - 220 1159 450