MBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G
MBD301LT1G 3 These devices are designed primarily for high-efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. 1 2 SOT-23 * EXtremely Low Minority Carrier Lifetime -15ps(Typ) * Very Low Capacitance -1.5pF(Max)@VR=15V * Low Reverse Leakage -IR=13 nAdc(Typ) LMBD301 * We declare that the material of product compliance with RoHS requirements. 1 ANODE 3 CATHODE MAXIMUM RATINGS(TJ =125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @TA=25 C Derate above 25 C Operating Junction Temperature Range Storage Temperature Range symbol VR PF value 30 280 2.8 unit Volts 200 2.0 TJ -55 to +125 -55 to +150 T stg mW mW/ C C C DEVICE MARKING LMBD301LT1G= 4T ELECTRICAL CHARACTERISTICS(T A=25 C unless otherwise noted) Characteri
MBD301LT1G Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MBD301 MARKING DIAGRAM 1 MAXIMUM RATINGS MBD301 Rating MBD 301 AYWWG G 2 MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ -55 to +125 C Storage Temperature Range Tstg -
MBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G
MBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G
MBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G
MBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* TO-92 2-Lead CASE 182 STYLE 1 SOT-23 (TO-236) CASE 318 STYLE 8 TO-92 SOT-23 2 CATHODE 1 ANODE 3 CATHODE 1 ANODE MARK
MBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G
1 A14 I PANEL_ERROR_DET 0 R1001 C1023 0.1uF O VC SCL3 GND_1 CK-_HDMI3 16 D2+_HDMI1 48 C1908 4.7uF C1032 0.1uF 16V RL_ON/PWR_ONOFF AC_DET READY C1909 4.7uF 3 VIN DDC_SCL_3 D2+_HDMI1 GND 1 JP57 1 EBL42367001 D200 READY JP56 18 17 I VOUT SDA3 26 D2+ JP55 19 MMBD301LT1G D206 30V DDC_SDA_3 A23 HDMI 3 B24 D2-_HDMI1 D2_GND 56 D1+_HDMI1 D2- 57 D1+ 58 D1_GND VCC_8 D1-_HDMI1 D1- 20 IC1008 KIA7805AF IC1003 KA7809ERTM VBR_A INV_CTL JP54 D C203 D0+_HDMI1 D0+ S B BSS83 Q200 G D0_GND VBR_B JP53 21 SHIELD JP52 22 CEC_0 SYNC 34 VAL 33 D0 32 D1 31 D2 30 D3 29 D4 28 D5 27 D6 26 D7 25 MCL 24 ERR 23 1.8V 22 3.3V 21 RST 20 SCL 19 SDA 18 SIF 17 AUDIO 16 VIDEO 15 NC_3 14 AIF_2 13 AIF_1 12 SCL_T 11 SDA_T 10 GND_2 9 NC_2 8 TP[VT] 7 RF_AGC 6 NC_1 5 +B[5V] 4 GND_1 3 BB[CTR] 2 ANT[5V] 1 23 R216 0 TDFV-G135D1 TU300 +9V_MSP AUO R1002 0 R215 0 READY MMBD301LT1G D201 30V R231 0 1/10W C211 C210 0.1uF C207 0.1uF C206 0.1uF C209 0.1uF C205 0.1uF C208 0.1uF C204 0.1uF 0.1uF DDC_SCL_2 DDC_SDA_2 CK-_HDMI2 CK+_HDMI2 D0-_HD
Panasonic P1.00KCCT-ND Panasonic P1.00KCCT-ND Panasonic P51.1CCT-ND Panasonic 3292W-501-ND Bourns P511CCT-ND Panasonic P1.0BBCT-ND Panasonic P1.0BBCT-ND Panasonic BZX84C5V1-LT1GOSCT-N On Semi. P375-ND Panasonic BZX84C16-FDICT-ND Diodes P375-ND Panasonic MMBD301LT1GOSCT-ND On Semi. P0.0ACR-ND Panasonic 12M4398 Bomar A33221-ND Tyco A33221-ND Molex 0430451027 Molex TAJC475K035R GMK212BJ105KG-T GRM21BR71H474KA88L TAJC475K035R GMK212BJ105KG-T GRM21BR71H474KA88L 562R5GAS10 562R5GAS10 562R5GAS10 562R5GAS10 700C470JW2500X 700C820JW2500X 100E221KW36ooX 100E271KW36ooX 100E221KW36ooX 100E221KW36ooX 100E221KW36ooX ERJ-6GEYJ511V ERJ-6GEYJ152V ERJ-6GEYJ3R3V ERJ-6GEYJ3R3V ERJ-ENF1001V ERJ-ENF1001V ERJ-6ENF51R1V SM:3269W-1 501 ERJ-6ENF5110V ERD-S1TJ1R0V ERD-S1TJ1R0V BZX84C5V1-7-F LN31GPH BZX84C16-7-F LN31GPH MMBD301LT1G ERJ-6GEY0R00V 161V504E 3-794630-6 3-794630-6 0430451027 05H7486 18PE 1/4LB T225-6 5 --- 2ea 602-289-100 2643540302 A5857R-100-ND 2643001301 A2016R-100-ND 2643000801 A2040R-100-ND EP
221KW3600X 100E271KW3600X 100E221KW3600X 100E221KW3600X 100E221KW3600X P510ATR-ND P1.5KACT-ND P3.3ACT-ND P3.3ACT-ND P1.00KCCT-ND P1.00KCCT-ND P51.1CCT-ND 3292W-501-ND P511CCT-ND P1.0BBCT-ND P1.0BBCT-ND BZX84C5V1-LT1GOSCT P375-ND BZX84C16-FDICT-ND P375-ND MMBD301LT1GOSCT 12M4398 839-0309 05H7486 T225-6 5 --- 2ea 602-289-100 2643540302 A5857R-100-ND 2643001301 A2016R-100-ND 2643000801 A2040R-100-ND EP1100HSTSC-27.12M 296-13131-1-ND Manuf. Microsemi Xicon Manuf. PN DRF1200 140-XRL16V10-RC GRM21BR71H474KA88L GRM21BR71H474KA88L AVX Taiyo Yuden AVX Taiyo Yuden Vishay ATC ATC ATC ATC ATC ATC Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Bourns Panasonic Panasonic Panasonic On Semi. Panasonic Diodes Panasonic On Semi. Bomar Keystone MCM Micrometals Alpha Fair-Rite Alpha Fair-Rite Alpha Fair-Rite Alpha Ecliptek Co. TI TAJC475K035R GMK212BJ105KG-T GRM21BR71H474KA88L TAJC475K035R GMK212BJ105KG-T GRM21BR71H474KA88L 562R5GAS10 700C820JW2500X 100E221KW36ooX 100E271KW36ooX 100E221KW36ooX
- 35 - LOC. NO. PART NO. DESCRIPTION / SPECIFICATION LOC. NO. PART NO. DESCRIPTION / SPECIFICATION C528 0CC102CK41A "Capacitor,Ceramic,ChipC1608C0G1H1" D712 0DSON00138A C529 0CC102CK41A "Capacitor,Ceramic,ChipC1608C0G1H1" D713 0DSON00138A "Diode,SchottkyMMBD301LT1G 600MV 3" C530 0CC102CK41A "Capacitor,Ceramic,ChipC1608C0G1H1" D714 0DD184009AA Diode AssemblyKDS184 KDS184 TP KE C531 0CC102CK41A "Capacitor,Ceramic,ChipC1608C0G1H1" D715 0DD184009AA Diode AssemblyKDS184 KDS184 TP KE C600 0CK103CK56A "Capacitor,Ceramic,Chip0603B103K50" ZD1000 0DZ560009GB "Diode,ZenerBZT52C5V6S-(F) 5.6V 5." C601 0CC390CK41A "Capacitor,Ceramic,ChipC1608C0G1H3" ZD1005 0DZ560009GB "Diode,ZenerBZT52C5V6S-(F) 5.6V 5." C602 0CK103CK56A "Capacitor,Ceramic,Chip0603B103K50" ZD1006 0DZ560009GB "Diode,ZenerBZT52C5V6S-(F) 5.6V 5." C603 0CC390CK41A "Capacitor,Ceramic,ChipC1608C0G1H3" ZD1007 0DZ560009GB "Diode,ZenerBZT52C5V6S-(F) 5.6V 5." C604 0CK103CK56A "Capacitor,Ceramic,Chip0603B103K50" ZD1008 0DZ560009GB "Diode,ZenerBZT52C5V6S-
30 30 20 40 40 120 120 120 70 70 70 200 200 200 200 30 500 100 100 Max (pF) 5 5 5 2 2 2 10 10 10 10 1.5 20 6 6 STYLE (A) (B) (C) LBAS40LT1G LBAS40-04LT1G LBAS40-06LT1G LBAS70-04LT1G LBAS70-06LT1G LBAS70LT1G LBAT54ALT1G LBAT54CLT1G LBAT54LT1G LBAT54SLT1G LMBD301LT1G LRB411DLT1G LRB421LT1G LRB425LT1G VR (V) 1 1 1 0 0 0 1 1 1 1 15 10 10 10 (D) VF Max IF (V) (mA) 0.5 30 0.5 30 0.5 30 0.75 10 0.75 10 0.75 10 0.4 10 0.4 10 0.4 10 0.4 10 0.6 10 0.5 500 0.34 10 0.34 10 (E) IR Max (A) 1 1 1 0.1 0.1 0.1 2 2 2 2 2 30 30 30 VR (V) 25 25 25 50 50 50 25 25 25 25 25 10 10 10 E C B C B E B A E C E E E A 3 (F) 3 2 Style 2 1 1 Package 12. SC-88 Surface Mount Schottky Diodes Device LBAT54DW1T1G Device Marking VR (V) IF (mA) VF@IF (V) IR@VR (mA) (uA) (V) KLD 30 200 1.0 100 2.0 25 LBAT54SDW1T1G KL8 30 200 1.0 100 2.0 25 6 5 4 6 5 4 1 2 3 1 2 3 5 4 6 3 1 2 Package STYLE 14 Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 13. Plastic-Sealed Axial 1-5A Schottky Barrier Rectifiers Device 1N5817 1N5818 1N5819 1N5820 1N
1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS KDS226 1.2V 85V 300MA 2A 4NS MMBD301LT1G 600MV 30V - - 1. KDS184 KDS184 TP KEC - 85V MMBD301LT1G 600MV 30V - - 1. KDS184 KDS184 TP KEC - 85V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V BZT52C5V6S-(F) 5.6V 5.2TO6V 0IPRP00784A EAN30510505 FE251MOH-LF(TSUMO56WHJ-LF) 3 L1952HQ-SFQ ARDRQP TSUMO G DIODEs D701 D702 D703 D704 D705 D706 D707 D708 D709 D710 D711 D712 D713 D714 D715 ZD701 ZD702 ZD703 ZD704 ZD705 ZD708 ZD709 ZD710 ICs U501 U502 - 27 - LGE Internal Use Only PART NO. DATE: 2007. 02. 06. DESCRIPTION / SPECIFICATION 0ISG240860B 0IMMR00203A 0IMMR00014A 0IMMR00014A 0IPMGFA003G 0IPMGSG016A 0IPMG78403A M24C08-WMN6TP
03B104K16" D710 0DS226009AA "Diode,SwitchingKDS226 1.2V 85V 30" C723 0CK104CF56A "Capacitor,Ceramic,Chip0603B104K16" D711 0DS226009AA "Diode,SwitchingKDS226 1.2V 85V 30" C724 0CK105CD56A "Capacitor,Ceramic,ChipC1608X7R1A1" D712 0DSON00138A "Diode,SchottkyMMBD301LT1G 600MV 3" C725 0CC101CK41A "Capacitor,Ceramic,ChipC1608C0G1H1" D713 0DD184009AA Diode AssemblyKDS184 KDS184 TP KE C901 0CK103CK51A "Capacitor,Ceramic,Chip0603B103K50" D714 0DSON00138A "Diode,SchottkyMMBD301LT1G 600MV 3" C902 0CE107EF610 "Capacitor,AL,RadialKMG16VB100M 10" D715 0DD184009AA Diode AssemblyKDS184 KDS184 TP KE C905 0CE107EF610 "Capacitor,AL,RadialKMG16VB100M 10" ZD1 0DZ560009GB "Diode,ZenerBZT52C5V6S-(F) 5.6V 5." C906 0CE107EF610 "Capacitor,AL,RadialKMG16VB100M 10" ZD101 0DZ330009CC "Diode,ZenerMTZJ3.3B 3.3V 3.32TO3." "Diode,ZenerBZT52C5V6S-(F) 5.6V 5." C907 0CE107EF610 "Capacitor,AL,RadialKMG16VB100M 10" ZD2 0DZ560009GB C908 0CK104CK56A "Capacitor,Ceramic,Chip0603B104K50" ZD3 0DZ560009GB "Diode,ZenerBZT52C5V6S