se MMBD301L as the device title to order this device in bulk. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 1 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 10 1.0 0.1 30 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST
MBD301/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * The Schottky Barrier Construction Provides Ultra-Stable Characteristics by Eliminating the "Cat-Whisker" or "S-Bend" Contact * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182- 02, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF
se MMBD301L as the device title to order this device in bulk. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 1 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 10 1.0 0.1 30 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST
ormation on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2009 November, 2011 - Rev. 6 1 Publication Order Number: MBD301/D MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT Reverse Leakage (VR = 25 V) Figure 3 IR Forward Voltage (IF = 1.0 mAdc) Figure 4 VF Forward Voltage (IF = 10 mAdc) Figure 4 VF Min Typ Max 30 - - - 0.9 1.5 - 13 200 - 0.38 0.45 - 0.52 0.6 Unit V pF nAdc Vdc Vdc ORDERING INFORMATION Package Shipping MBD301G TO-92 (Pb-Free) 5,000 Units / Bulk MMBD301LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part o
ormation in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2007 January, 2007 - Rev. 4 1 Publication Order Number: MBD301/D MBD301, MMBD301LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 - - V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT - 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR - 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF - 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF - 0.52 0.6 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) ORDERING INFORMATION Package Shipping TO-92 5000 Units / Bulk TO-92 (Pb-Free) 5000 Units / Bulk SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G For information on tape and reel specifi
Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 2 1 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 10 1.0 0.1 30 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST
ion) 3 CATHODE 1 ANODE ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 5 1 Publication Order Number: MBD301/D MBD301G, MMBD301LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 - - V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT - 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR - 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF - 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF - 0.52 0.6 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) ORDERING INFORMATION Package Shipping MBD301G TO-92 (Pb-Free) 5000 Units / Bulk MMBD301LT1G SOT-23 (Pb-Free) 3000 / Tape & Reel MMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica
a Surface Mount package. e Extremely Low Minority Carrier Lifetime 15 ps (Typ) e Very Low Capacitance 1.5 pF (Max) @ VR=15V e Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Order this document by MBD301/D MBD301 MMBD301LT1 Motorola Preferred Devices 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 2 CASE 182-02, STYLE 1 (TO-226AC) MBD301 | MMBD301LT1 Rating Symbol Value Unit 20lq0 1 Reverse Voltage VR 30 Volts CATHODE ANODE Forward Power Dissipation Pe @ Ta = 25C 280 200 mw Derate above 25C 2.8 2.0 mW/C 3 Operating Junction Ty C > Temperature Range 55 to +125 1 i Storage Temperature Range Tstg 55 to +150 C 2 DEVICE MARKING CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MMBD301LT1 = 4T | 3 o}q 1 CATHODE ANODE ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 4A) V(BR)R 30 _ Volts Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Cr _ 0.9 1.5 pF Reve
information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 June, 2005 - Rev. 3 1 Publication Order Number: MBD301/D MBD301, MMBD301LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 - - V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT - 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR - 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF - 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF - 0.52 0.6 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) ORDERING INFORMATION Package Shipping TO-92 5,000 Units / Bulk TO-92 (Pb-Free) 5,000 Units / Bulk SOT-23 3,000 / Tape & Reel SOT-23 (Pb-Free) 3,000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G For information on tape and reel spe
MBD301/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182- 02, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 280 2.8 200 2.0 2 CATHODE mW mW/C 3 C - 55 to +125 Storage Temperature Range Tstg 1 AN
MBD301/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182- 02, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 280 2.8 200 2.0 2 CATHODE mW mW/C 3 C - 55 to +125 Storage Temperature Range Tstg 1 AN
r location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBD301/D MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT Reverse Leakage (VR = 25 V) Figure 3 IR Forward Voltage (IF = 1.0 mAdc) Figure 4 VF Forward Voltage (IF = 10 mAdc) Figure 4 VF Min Typ Max 30 - - - 0.9 1.5 - 13 200 - 0.38 0.45 - 0.52 0.6 Unit V pF nAdc Vdc Vdc ORDERING INFORMATION Package Shipping MBD301G TO-92 (Pb-Free) 5,000 Units / Bulk MMBD301LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part o
Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 454 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 10 1.0 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST
Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 454 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 10 1.0 0.1 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST
r location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBD301/D MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT Reverse Leakage (VR = 25 V) Figure 3 IR Forward Voltage (IF = 1.0 mAdc) Figure 4 VF Forward Voltage (IF = 10 mAdc) Figure 4 VF Min Typ Max 30 - - - 0.9 1.5 - 13 200 - 0.38 0.45 - 0.52 0.6 Unit V pF nAdc Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Package Shipping MBD301G TO-92 (P