34-D4 37-B4 38-C4 48-D2 21 6 7 8 13 14 B KBC3_THERM_ALERT* 9 48-D2 23 +RTC_PWR3V +3V_PWROK* VSUS_PWRGD POWER_SW* THERMTRIP1* THERMTRIP2* THERMTRIP3* SMBADDRSEL HW_LOCK* ATF_INT* VCP 10K 49.9 1% R259 R262 10K 10K C329 U17 EMC6N300 10 5 11 R257 R261 3 D11 MMBD301LT1 +3VSUS VSET THDAT_SMB THCLK_SMB REM_DIOD2_N REM_DIOD2_P REM_DIOD1_N REM_DIOD1_P INTRUDER* THERMTRIP_SIO RESERVED THERM_STP* VSS 4 22 TP10590 100nF 16V TP10589 1 2 48-D2 34-C2 48-C2 48-D2 34-B2 7-C3 17 18 19 20 12 15 16 24 3 C328 2.2nF 48-C2 7-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC NO STUFF CPU2_THERMDA P3.3V R154 48-B4 18-?? CHP3_OVERT* R153 1.5K 1% TP10403 TP10404 TP10405 TP10587 TP10588 R151 TP10592 54.9 1% CPU1_PROCHOT* 3 R152 7-C3 48-A3 B 10K VTT TP10591 1 475 1% 3 48-C2 18-?? CPU3_ALERT* Q8 MMBT3904 1 2 2 Q7 MMBT3904 A A SAMSUNG ELECTRONICS 4 3 2 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
MBD301, MMBD301LT1 Preferred Device Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 Pb-Free Packages are Available MBD301 MARKING DIAGRAM TO-92 (TO-226AC) CASE 182 STYLE 1 MAXIMUM RATINGS MBD301 Rating 1 MMBD301LT1 2 Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C Derate above 25C PF Operat
MBD301, MMBD301LT1 Preferred Device Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 Pb-Free Packages are Available MBD301 MARKING DIAGRAM MAXIMUM RATINGS MBD301 Rating MMBD301LT1 1 Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C Derate above 25C PF Operating and Storage Junction Temperature
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Curre
E 19 STYLE 12 Cathode 1 Anode 3 1 2 Series 3 2 Cathode Typical Characteristics Capacitance versus Reverse Voltage 2.8 TA = 25C MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* 0.9 TA = 25C 2.4 C T , CAPACITANCE (pF) C T , CAPACITANCE (pF) 1 0.8 0.7 2 MBD301, MMBD301LT1 1.6 1.2 0.8 0.4 0.6 MBD701, MMBD701LT1 0 0 1 2 VR, REVERSE VOLTAGE (VOLTS) 3 4 0 * EACH DIODE 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) (See Table 44) Devices listed in bold, italic are Motorola preferred devices. Motorola Small-Signal Transistors, FETs and Diodes Device Data Selector Guide 1-29 Schottky Diodes (continued) Table 44. Schottky Diodes The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency. V(BR)R Volts Device CT @ VR pF Max VF @ 10 mA Volts Max IR @ VR nA Max Minority Lifetime pS (TYP) Device Marking Style 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 1.0 0.6 0.6 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 15 15 -- -- -- -- 1 1 1 0.5 @ 30 mA 0.5 @ 3
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Curre
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* TO-92 2-Lead CASE 182 STYLE 1 SOT-23 (TO-
ER B340A,40,3A,SMA,TP 0402-001405 D5 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D500 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D8 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D7 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0404-000114 D17 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D9 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D516 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D517 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D30 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D31 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D22 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D3 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D514 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D513 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D26 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D25 D
13 14 B KBC3_THERM_ALERT* 9 48-D2 23 +RTC_PWR3V +3V_PWROK* VSUS_PWRGD POWER_SW* THERMTRIP1* THERMTRIP2* THERMTRIP3* SMBADDRSEL HW_LOCK* ATF_INT* VCP 10K 49.9 1% R259 R262 10K 10K C329 U17 EMC6N300 10 5 11 R257 R261 3 P3.3V_AUX 1 www.kythuatvitinh.com D11 MMBD301LT1 +3VSUS VSET THDAT_SMB THCLK_SMB REM_DIOD2_N REM_DIOD2_P REM_DIOD1_N REM_DIOD1_P INTRUDER* THERMTRIP_SIO RESERVED THERM_STP* VSS 4 22 TP10590 100nF 16V TP10589 1 2 48-D2 34-C2 48-D2 48-C2 34-B2 7-C3 17 18 19 20 12 15 16 24 3 C328 2.2nF 48-C2 7-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC NO STUFF CPU2_THERMDA P3.3V R154 48-B4 18-?? CHP3_OVERT* R153 1.5K 1% TP10403 TP10404 TP10405 TP10587 TP10588 R151 TP10592 54.9 1% CPU1_PROCHOT* 3 R152 7-C3 48-A3 B 10K VTT TP10591 1 475 1% 3 48-C2 18-?? CPU3_ALERT* Q8 MMBT3904 1 2 2 Q7 MMBT3904 A A SAMSUNG ELECTRONICS 4 3 2 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Curre
MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating 2 CATHODE MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range
t, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. e Extremely Low Minority Carrier Lifetime 15 ps (Typ) e Very Low Capacitance 1.5 pF (Max) @ VR=15V e Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Order this document by MBD301/D MBD301 MMBD301LT1 Motorola Preferred Devices 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1 2 CASE 182-02, STYLE 1 (TO-226AC) MBD301 | MMBD301LT1 Rating Symbol Value Unit 20lq0 1 Reverse Voltage VR 30 Volts CATHODE ANODE Forward Power Dissipation Pe @ Ta = 25C 280 200 mw Derate above 25C 2.8 2.0 mW/C 3 Operating Junction Ty C > Temperature Range 55 to +125 1 i Storage Temperature Range Tstg 55 to +150 C 2 DEVICE MARKING CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MMBD301LT1 = 4T | 3 o}q 1 CATHODE ANODE ELECTRICAL CHARACTERISTICS (Ta = 25C unless othe
MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating 2 CATHODE MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range
RT-CPU Cygnus,AL,T2.5,W5.5,L37.5mm,silver,AL diecasting 0902-001813 CPU500 730,1.6GHz,64Bit,uFC-BGA,479P,TR,Plastic,1.372V,27W,0to70C,-,3 BA81-00938A CPU-HEATSINK PAD CYGNUS,Copper,W15*L17*T0.15mm,Silver,8.5W/MK,18G/CC,60C/ 0404-000114 D10 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D11 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000157 D12 DIODE-SCHOTTKY CMPSH-3A,30V,100MA,SOT-23,TP 0402-001024 D13 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP 0402-001024 D14 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP 0404-000157 D16 DIODE-SCHOTTKY CMPSH-3A,30V,100MA,SOT-23,TP 0404-000114 D2 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D3 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0401-001020 D4 DIODE-SWITCHING BAW56,75V,125MA,SOT-23,TP 0406-001141 D490 DIODE-TVS PGB1010603NR,-/-/1000V,-,EIA-RS481 0406-001141 D491 DIODE-TVS PGB1010603NR,-/-/1000V,-,EIA-RS481 0404-001116 D500 DIODE-SCHOTTKY B540C,40V,5000MA,DO-214AB,TR 0402-001405 D502 DIODE-RECTIFIER B34
MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MBD301 2 CATHODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junctio