LMBD301LT1 3 These devices are designed primarily for high-efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. 1 2 SOT-23 * EXtremely Low Minority Carrier Lifetime -15ps(Typ) * Very Low Capacitance -1.5pF(Max)@VR=15V * Low Reverse Leakage -IR=13 nAdc(Typ) LMBD301 1 ANODE 3 CATHODE MAXIMUM RATINGS(TJ=125C unless otherwise noted) LBD301 LMBD301LT1 Rating symbol value unit Reverse Voltage VR 30 Volts Forward Power Dissipation PF @TA=25 C 280 200 mW Derate above 25 C 2.8 2.0 mW/ C Operating Junction TJ C Temperature Range -55 to +125 Storage Temperature Range T stg -55 to +150 C DEVICE MARKING LMBD301LT1=4T ELECTRICAL CHARACTERISTICS(T A=25 C unless otherwise noted) Characteristic Symbol Min Typ Reverse Breakdown Voltage(IR=
LMBD301LT1G 3 These devices are designed primarily for high-efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. 1 2 SOT-23 * EXtremely Low Minority Carrier Lifetime -15ps(Typ) * Very Low Capacitance -1.5pF(Max)@VR=15V * Low Reverse Leakage -IR=13 nAdc(Typ) LMBD301 * We declare that the material of product compliance with RoHS requirements. 1 ANODE 3 CATHODE MAXIMUM RATINGS(TJ =125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @TA=25 C Derate above 25 C Operating Junction Temperature Range Storage Temperature Range symbol VR PF value 30 280 2.8 unit Volts 200 2.0 TJ -55 to +125 -55 to +150 T stg mW mW/ C C C DEVICE MARKING LMBD301LT1G= 4T ELECTRICAL CHARACTERISTICS(T A=25 C unless otherwise noted) Character
0 30 30 20 40 40 120 120 120 70 70 70 200 200 200 200 30 500 100 100 Max (pF) 5 5 5 2 2 2 10 10 10 10 1.5 20 6 6 STYLE (A) (B) (C) LBAS40LT1G LBAS40-04LT1G LBAS40-06LT1G LBAS70-04LT1G LBAS70-06LT1G LBAS70LT1G LBAT54ALT1G LBAT54CLT1G LBAT54LT1G LBAT54SLT1G LMBD301LT1G LRB411DLT1G LRB421LT1G LRB425LT1G VR (V) 1 1 1 0 0 0 1 1 1 1 15 10 10 10 (D) VF Max IF (V) (mA) 0.5 30 0.5 30 0.5 30 0.75 10 0.75 10 0.75 10 0.4 10 0.4 10 0.4 10 0.4 10 0.6 10 0.5 500 0.34 10 0.34 10 (E) IR Max (A) 1 1 1 0.1 0.1 0.1 2 2 2 2 2 30 30 30 VR (V) 25 25 25 50 50 50 25 25 25 25 25 10 10 10 E C B C B E B A E C E E E A 3 (F) 3 2 Style 2 1 1 Package 12. SC-88 Surface Mount Schottky Diodes Device LBAT54DW1T1G Device Marking VR (V) IF (mA) VF@IF (V) IR@VR (mA) (uA) (V) KLD 30 200 1.0 100 2.0 25 LBAT54SDW1T1G KL8 30 200 1.0 100 2.0 25 6 5 4 6 5 4 1 2 3 1 2 3 5 4 6 3 1 2 Package STYLE 14 Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 13. Plastic-Sealed Axial 1-5A Schottky Barrier Rectifiers Device 1N5817 1N5818 1N5819 1N5820 1