et K4B2G0446C K4B2G0846C DDR3 SDRAM 1. Ordering Information [ Table 1 ] Samsung 2Gb DDR3 C-die ordering information table Organization DDR3-800 (6-6-6) DDR3-1066 (7-7-7) DDR3-1333 (9-9-9) DDR3-1600 (11-11-11) Package 512Mx4 K4B2G0446C-HCF7 K4B2G0446C-HCF8 K4B2G0446C-HCH9 K4B2G0446C-HCK0 78 FBGA 256Mx8 K4B2G0846C-HCF7 K4B2G0846C-HCF8 K4B2G0846C-HCH9 K4B2G0846C-HCK0 78 FBGA NOTE : 1. Speed bin is in order of CL-tRCD-tRP. 2. Key Features [ Table 2 ] 2Gb DDR3 C-die Speed bins Speed tCK(min) DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 6-6-6 7-7-7 9-9-9 11-11-11 2.5 1.875 1.5 1.25 ns Unit CAS Latency 6 7 9 11 nCK tRCD(min) 15 13.125 13.5 13.75 ns tRP(min) 15 13.125 13.5 13.75 ns tRAS(min) 37.5 37.5 36 35 ns tRC(min) 52.5 50.625 49.5 48.75 ns * JEDEC standard 1.5V 0.075V Power Supply * VDDQ = 1.5V 0.075V * 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin * 8 Banks * Posted CAS * Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10, 11
et K4B2G0446C K4B2G0846C DDR3 SDRAM 1. Ordering Information [ Table 1 ] Samsung 2Gb DDR3 C-die ordering information table Organization DDR3-800 (6-6-6) DDR3-1066 (7-7-7) DDR3-1333 (9-9-9) DDR3-1600 (11-11-11) Package 512Mx4 K4B2G0446C-HCF7 K4B2G0446C-HCF8 K4B2G0446C-HCH9 K4B2G0446C-HCK0 78 FBGA 256Mx8 K4B2G0846C-HCF7 K4B2G0846C-HCF8 K4B2G0846C-HCH9 K4B2G0846C-HCK0 78 FBGA NOTE : 1. Speed bin is in order of CL-tRCD-tRP. 2. Key Features [ Table 2 ] 2Gb DDR3 C-die Speed bins Speed tCK(min) DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 6-6-6 7-7-7 9-9-9 11-11-11 2.5 1.875 1.5 1.25 ns Unit CAS Latency 6 7 9 11 nCK tRCD(min) 15 13.125 13.5 13.75 ns tRP(min) 15 13.125 13.5 13.75 ns tRAS(min) 37.5 37.5 36 35 ns tRC(min) 52.5 50.625 49.5 48.75 ns * JEDEC standard 1.5V 0.075V Power Supply * VDDQ = 1.5V 0.075V * 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin * 8 Banks * Posted CAS * Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10, 11
DRAM K4B2G04(08)46C 1.0 Ordering Information [ Table 1 ] Samsung 2Gb DDR3 C-die ordering information table Organization DDR3-800 (6-6-6) DDR3-1066 (7-7-7) DDR3-1333 (9-9-9) DDR3-1600 (11-11-1) DDR3-1866 (TBD) Package 512Mx4 K4B2G0446C-HCF7 K4B2G0446C-HCF8 K4B2G0446C-HCH9 K4B2G0446C-HCK0 K4B2G0446C-TBD 78 FBGA 256Mx8 K4B2G0846C-HCF7 K4B2G0846C-HCF8 K4B2G0846C-HCH9 K4B2G0846C-HCK0 K4B2G0846C-TBD 78 FBGA Note : 1. Speed bin is in order of CL-tRCD-tRP. 2.0 Key Features [ Table 2 ] 2Gb DDR3 C-die Speed bins Speed DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 6-6-6 7-7-7 9-9-9 11-11-11 TBD 2.5 1.875 1.5 1.25 TBD ns tCK(min) Unit CAS Latency 6 7 9 11 TBD nCK tRCD(min) 15 13.125 13.5 13.75 TBD ns tRP(min) 15 13.125 13.5 13.75 TBD ns tRAS(min) 37.5 37.5 36 35 TBD ns tRC(min) 52.5 50.625 49.5 48.75 TBD ns * JEDEC standard 1.5V 0.075V Power Supply * VDDQ = 1.5V 0.075V * 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933MHzfCK fo
...... 54 -4- Rev. 1.31 datasheet K4B2G0446C K4B2G0846C DDR3 SDRAM 1. Ordering Information [ Table 1 ] Samsung 2Gb DDR3 C-die ordering information table Organization DDR3-1066 (7-7-7) DDR3-1333 (9-9-9)3 DDR3-1600 (11-11-11)2 Package 512Mx4 K4B2G0446C-HCF8 K4B2G0446C-HCH9 K4B2G0446C-HCK0 78 FBGA 256Mx8 K4B2G0846C-HCF8 K4B2G0846C-HCH9 K4B2G0846C-HCK0 78 FBGA NOTE : 1. Speed bin is in order of CL-tRCD-tRP. 2. Backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7) 3. Backward compatible to DDR3-1066(7-7-7) 2. Key Features [ Table 2 ] 2Gb DDR3 C-die Speed bins Speed DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 6-6-6 7-7-7 9-9-9 11-11-11 Unit tCK(min) 2.5 1.875 1.5 1.25 ns CAS Latency 6 7 9 11 nCK tRCD(min) 15 13.125 13.5 13.75 ns tRP(min) 15 13.125 13.5 13.75 ns tRAS(min) 37.5 37.5 36 35 ns tRC(min) 52.5 50.625 49.5 48.75 ns * JEDEC standard 1.5V 0.075V Power Supply The 2Gb DDR3 SDRAM C-die is organized as a 64Mbit x 4 I/Os x 8banks * VDDQ = 1.5V 0.075V or 32Mbit x 8 I/Os x 8banks device. This synchronou