FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage
ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 S Absolute Maximum Ratings
FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage
aximum Junction Temperature Rating D GD S G TO-220 Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) S FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ IAR Avalanche Current (Note 1) 52.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 12.1 7.0 121 0.81 -55 to +175 mJ V/ns W W/C C 300 C FQP50N06L 1.24 Unit C/W 62.5 C/W dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2001 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FQP50
FQP33N10 FQP33N10L FQP34N20 FQP34N20L FQP35P06 FQP39N08 FQP39N08L FQP3N25 FQP3N30 FQP3N40 FQP3N60 FQP3N80 FQP3N90 FQP3P25 FQP3P50 FQP40N10 FQP43N15 FQP45N03L FQP4N15 FQP4N20 FQP4N20L FQP4N25 FQP4N50 FQP4N60 FQP4N80 FQP4N90 FQP4P10 FQP4P20 FQP4P40 FQP50N06 FQP50N06L FQP50N10 FQP55N06 FQP55N08 FQP55P06 FQP5N15 FQP5N20 FQP5N20L FQP5N30 FQP5N40 FQP5N50 FQP5N80 FQP5N90 FQP60N03L FQP630 FQP65N06 FQP65N08 FQP6N10 FQP6N10L FQP6N25 FQP6N40 FQP6N45 FQP6N50 FQP6N60 FQP6N70 FQP6N80 FQP6N90 FQP6P25 FQP70N10 FQP75N08 FQP7N15 FQP7N20 FQP7N20L FQP7N30 FQP7N40 FQP7N60 FQP7N80 FQP7P10 FQP7P20 FQP85N06 FQP8N08 FQP8N08L FQP8N25 FQP8N80 FQP8P06 FQP8P06L FQP95N03L FQP9N25 FQP9N30 FQP9N50 FQP9P25 FQPF10N10 FQPF10N10L FQPF10N20 FQPF10N20L FQPF110N04L FQPF11N40 FQPF11P10 FQPF12N15 28 Fairchild Closest Equivalent FQP50N06 FQP50N06L FQP50N10 FQP55N06 FQP55N08 FQP55P06 FQP5N15 FQP5N20 FQP5N20L FQP5N30 FQP5N40 FQP5N50 FQP5N80 FQP5N90 FQP60N03L FQP630 FQP65N06 FQP65N08 FQP6N10 FQP6N10L FQP6N25 FQP6N40 FQP6N45 FQP
FQP50N06L April 2000 QFET TM FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS S TC = 25C unless otherwise noted Parameter ID Drain-Source Voltage - Conti
FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuou
FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor(R)'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D ! " G G! DS ! " " " TO-220 ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A IDM Drain Current VGSS Gate-Source Voltage 2
FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuou
FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuou
12N06RLESM9A 512-FDMS5362L_F085 512-FDMS86540 512-FQP20N06 512-FQP20N06L 512-FDMS86520L 512-FDMS5672 512-FQPF30N06L 512-FDD5690 512-FQP30N06 512-FDMS86550 512-FDMS5361L_F085 512-FDD10AN06A0_F085 512-FDD10AN06A0 512-FDD5353 512-FDD13AN06A0 512-RFP50N06 512-FQP50N06L 512-FDP55N06 512-FDMC86570LET60 512-FDMC86570L 512-FDB13AN06A0 512-FDP65N06 512-FQP65N06 512-RFP70N06 512-FDP038AN06A0 (c) Copyright 2016 Mouser Electronics 726 Package SOT-23 SOT-23 SOT-23 TO-252 TO-251 TO-252 TO-252AA TO-220AB TO-247 TO-220AB TO-247 TO-247 TO-220AB SOT-23 SOT-23 SOT-23-3 SOT-323 SOT-23 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 SOT-23 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 SOT-23 SSOT-3 SSOT-3 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SSOT-6 SOIC-8 MicroFET-2 SOIC-8 SOIC-8 TO-220F TO-251 TO-252 IPAK SOIC-8 TO-252 TO-220AB TO-252 MLP-8 TO-220AB Power-56 TO-220F TO-220F TO-252 TO-220F TO-252AA Power-56 Power-56 TO-220AB TO-220AB Power-56 Power-56 TO-220F TO-252AA TO-220AB Power-56 Power-56 TO-252AA-
0FP STP6NC60 STP8NC50FP /S AM SU N G FQD20N06L FQD3N60 FQD4N40 FQD4N50 FQD6N25 FQL40N50 FQP10N20 FQP11N40 FQP12N60 FQP1306 FQP1306L FQP16N06 FQP16N25 FQP17N10 FQP19N20 FQP20N06L FQP24N03L FQP30N06 FQP30N06L FQP3N60 FQP3N80 FQP4N50 FQP4N80 FQP4N90 FQP50N06 FQP50N06L FQP50N10 FQP5N40 FQP5N60 FQP5N80 FQP5N90 FQP60N06 FQP6N25 FQP6N50 FQP6N80 FQP6N90 FQP7N20 FQP7N40 FQP7N60 FQP7N80 FQP9N50 FQPF10N20 FQPF11N40 FQPF12N60 FQPF19N20 FQPF20N06 FQPF20N06L FQPF30N06 FQPF30N06L FQPF3N60 FQPF3N80 FQPF4N50 FQPF4N80 FQPF4N90 FQPF50N06 FQPF5N40 FQPF5N60 FQPF5N80 FQPF6N25 FQPF6N50 FQPF7N20 FQPF7N40 FQPF7N60 FQPF9N50 FQT6N10L FQU2N50 ST Replacement STN2NE10L STD1NB50 2 FA IR CH ILD P/N ST Nearest Preferred STD2NB25-1 Supplier FAIRCHILD / SAMSUNG STS8NF30L STS12NF30L STS5PF30L STS6DNF30L STS6DNF30L STS4DPF20L FA IR CH ILD IRF520 IRF520FI IRF520 IRF530 STP20NE10 IRF530FI IRF540 /S AM SU N G STS11NF3LL STP24NF10 STP33N10 STP20NE06 STP30NE06 FA IR CH ILD /S AM SU N G IRF540FI STB55NE06 STP16NE06 STP55NF06 STP4N20 STP7N
N-CHANNEL FDC658P FDC5614P DUAL P-CHANNEL FDC6506P * = Sold as EA (74304) SINGLE QFETS These devices are well suited for low-voltage applications such as high-efficiency switching DC-to-DC converters and DC motor control. N-CHANNEL Mfg. Part No. FQA170N06 FQP50N06L FQP50N06 FQP44N10 FQA28N15 FQP46N15 FQP34N20 FQA62N25C FQP27N25 FQA30N40 FQP17N40 FQA24N50 FQA28N50 FQP9N50C FQP13N50C 0.09 0.14 0.07 0.026 0.026 0.12 0.026 -36 -16.5 -27 -47 -47 -17 47 294 100 120 160 160 79 160 TO-3P TO-220 D2-PAK D2-PAK TO-262 TO-220 TO-220 45J3232 58K1523 58K1517 84H4746 82C4160 58K1522 34C0498 2.86 1.82 0.95 0.84 1.07 0.93 2.17 1.49 2.27 1.40 0.70 0.70 2.21 1.80 ULTRAFET POWER MOSFETS Single N-channel configuration with 3 leads. Applications include switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors. Mfg. Part No. HUF75321P3 HUF75333P3 HUF75339P3 HUF75345P3 HUF75542P3 HUF75545P3 FDP3682 HUF75645P3 FDP2532 HUF75842P3 VDS (V) 60 60 60 10
O-220F FQI140N03L FQI95N03L FQI60N03L FQP140N03L FQP95N03L FQP60N03L FQPF140N03L FQPF95N03L FQPF60N03L FQI45N03L FQP45N03L FQPF45N03L FQI26N03L FQP26N03L FQPF26N03L FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI50N06L FQI30N06 FQP85N06 FQP65N06 FQP55N06 FQP50N06 FQP50N06L FQP30N06 FQPF85N06 FQPF65N06 FQPF55N06 FQPF50N06 FQPF50N06L FQPF30N06 FQI30N06L FQP30N06L FQPF30N06L FQI20N06 FQP20N06 FQPF20N06 FQI20N06L FQP20N06L FQPF20N06L FQI13N06 FQP13N06 FQPF13N06 FQI13N06L FQP13N06L FQPF13N06L FQU24N08 FQU17N08 FQU17N08L FQU9N08 FQU9N08L FQI90N08 FQI70N08 FQI58N08 FQI44N08 FQI24N08 FQI17N08 FQI17N08L FQI9N08 FQI9N08L FQP90N08 FQP70N08 FQP58N08 FQP44N08 FQP24N08 FQP17N08 FQP17N08L FQP9N08 FQP9N08L FQPF90N08 FQPF70N08 FQPF58N08 FQPF44N08 FQPF24N08 FQPF17N08 FQPF17N08L FQPF9N08 FQPF9N08L FQU19N10 FQU19N10L FQU13N10 FQU13N10L FQU7N10 FQU7N10L FQI70N10 FQI55N10 FQI44N10 FQI33N10 FQI33N10L FQI19N10 FQI19N10L FQI13N10 FQI13N10L FQI7N10 FQI7N10L FQP70N10 FQP55N10 FQP44N10 FQP33N10 FQP33N10L FQP19N10 FQP19N10L FQP13N10
0FP STP6NC60 STP8NC50FP /S AM SU N G FQD20N06L FQD3N60 FQD4N40 FQD4N50 FQD6N25 FQL40N50 FQP10N20 FQP11N40 FQP12N60 FQP1306 FQP1306L FQP16N06 FQP16N25 FQP17N10 FQP19N20 FQP20N06L FQP24N03L FQP30N06 FQP30N06L FQP3N60 FQP3N80 FQP4N50 FQP4N80 FQP4N90 FQP50N06 FQP50N06L FQP50N10 FQP5N40 FQP5N60 FQP5N80 FQP5N90 FQP60N06 FQP6N25 FQP6N50 FQP6N80 FQP6N90 FQP7N20 FQP7N40 FQP7N60 FQP7N80 FQP9N50 FQPF10N20 FQPF11N40 FQPF12N60 FQPF19N20 FQPF20N06 FQPF20N06L FQPF30N06 FQPF30N06L FQPF3N60 FQPF3N80 FQPF4N50 FQPF4N80 FQPF4N90 FQPF50N06 FQPF5N40 FQPF5N60 FQPF5N80 FQPF6N25 FQPF6N50 FQPF7N20 FQPF7N40 FQPF7N60 FQPF9N50 FQT6N10L FQU2N50 ST Replacement STN2NE10L STD1NB50 2 FA IR CH ILD P/N ST Nearest Preferred STD2NB25-1 Supplier FAIRCHILD / SAMSUNG STS8NF30L STS12NF30L STS5PF30L STS6DNF30L STS6DNF30L STS4DPF20L FA IR CH ILD IRF520 IRF520FI IRF520 IRF530 STP20NE10 IRF530FI IRF540 /S AM SU N G STS11NF3LL STP24NF10 STP33N10 STP20NE06 STP30NE06 FA IR CH ILD /S AM SU N G IRF540FI STB55NE06 STP16NE06 STP55NF06 STP4N20 STP7N