t 9 GTO 75.2/75.2II GTO 75.2/75.2II BLOCK DIAGRAM 10 GTO 75.2/75.2II TER02 FH01 DST0014-00 6m/m J181 6m/m J180 6m/m 6m/m J310 J311 6m/m J312 CL-300 C04 L03 2 2200/25V"WL" 104P C03 C05 R54 47 J75 J76 20m/m 20m/m R52 1K R53 47 J77 J78 T01 1K Q53 R42 R43 Q44 FQP50N06 47 17.5m/mJ81 17.5m/mJ82 R44 FQP50N06 47 17.5m/mJ79 17.5m/mJ80 Q54 FQP50N06 37PHI 5T:12T (0.7x9):(0.7x4) 1 4 7.5m/m J320 FQP50N06 2 3 7.5m/m J324 7.5m/m J323 7.5m/m J322 7.5m/m J321 Q43 TH01 FTD5-350 473P C33 R30 100/2W 6 7 C67 C57 C53 473P R191 330/2W R291 J67 17.5m/m 22m/m 22m/m 22m/m 330/2W C52 J69 J68 C62 56K J6615m/m J65 10m/m J72 J64 10m/m J71 J63 22m/m J62 22m/m J59 47/50V 47/50V FR154 D51 FR154 D52 FR154 D53 FR154 D54 C63 15m/m 15m/m 473P 3300/35V"SHL" 3300/35V"SHL" 10K R61 8 5 C08 222(M) L01 CL-500 20m/m 20m/m 2 2200/25V"WL" GTO75.2 L02 J61 J60 R181 100/16V R281 56K 15m/m J101 15m/m J102 20m/m J103 CL-500 C61 7.5m/m 10m/mJ33 C3198GRJ40 7.5m/m 12.5m/m J34 Q281 J39 C3198GR 10m/m J35 10m/m J3
QP30N06L FQP33N10 FQP33N10L FQP34N20 FQP34N20L FQP35P06 FQP39N08 FQP39N08L FQP3N25 FQP3N30 FQP3N40 FQP3N60 FQP3N80 FQP3N90 FQP3P25 FQP3P50 FQP40N10 FQP43N15 FQP45N03L FQP4N15 FQP4N20 FQP4N20L FQP4N25 FQP4N50 FQP4N60 FQP4N80 FQP4N90 FQP4P10 FQP4P20 FQP4P40 FQP50N06 FQP50N06L FQP50N10 FQP55N06 FQP55N08 FQP55P06 FQP5N15 FQP5N20 FQP5N20L FQP5N30 FQP5N40 FQP5N50 FQP5N80 FQP5N90 FQP60N03L FQP630 FQP65N06 FQP65N08 FQP6N10 FQP6N10L FQP6N25 FQP6N40 FQP6N45 FQP6N50 FQP6N60 FQP6N70 FQP6N80 FQP6N90 FQP6P25 FQP70N10 FQP75N08 FQP7N15 FQP7N20 FQP7N20L FQP7N30 FQP7N40 FQP7N60 FQP7N80 FQP7P10 FQP7P20 FQP85N06 FQP8N08 FQP8N08L FQP8N25 FQP8N80 FQP8P06 FQP8P06L FQP95N03L FQP9N25 FQP9N30 FQP9N50 FQP9P25 FQPF10N10 FQPF10N10L FQPF10N20 FQPF10N20L FQPF110N04L FQPF11N40 FQPF11P10 FQPF12N15 28 Fairchild Closest Equivalent FQP50N06 FQP50N06L FQP50N10 FQP55N06 FQP55N08 FQP55P06 FQP5N15 FQP5N20 FQP5N20L FQP5N30 FQP5N40 FQP5N50 FQP5N80 FQP5N90 FQP60N03L FQP630 FQP65N06 FQP65N08 FQP6N10 F
FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage
FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage
ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D GD S G TO-220 S Absolute Maximum Ratings
FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 50A, 60V, RDS(on) = 0.022 @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G! ! FQP Series Absolute Maximum Ratings ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current " " TO-220
FQP50N06L N-Channel QFET(R) MOSFET 60 V, 52.4 A, 21 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor(R)'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 52.4 A, 60 V, RDS(on) = 21 m (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D ! " G G! DS ! " " " TO-220 ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A IDM Drain Current VGSS Gate-Source Voltage 2
aximum Junction Temperature Rating D GD S G TO-220 Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) S FQP50N06L 60 Unit V 52.4 A 37.1 A 210 A VGSS Gate-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ IAR Avalanche Current (Note 1) 52.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 12.1 7.0 121 0.81 -55 to +175 mJ V/ns W W/C C 300 C FQP50N06L 1.24 Unit C/W 62.5 C/W dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2001 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FQP50
FQP50N06L April 2000 QFET TM FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS S TC = 25C unless otherwise noted Parameter ID Drain-Source Voltage - Conti
FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 50A, 60V, RDS(on) = 0.022 @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G! ! FQP Series Absolute Maximum Ratings ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current " " TO-220
FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuou
FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuou
FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 50A, 60V, RDS(on) = 0.022 @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. TM FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 50A, 60V, RDS(on) = 0.022 @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt cap
FQP50N06 April 2000 QFET TM FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. * * * * * * * 50A, 60V, RDS(on) = 0.022 @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 ! FQP Series Absolute Maximum Ratings Symbol VDSS S TC = 25C unless otherwise noted Parameter ID Drain-Source Voltage - Continuous (TC =