FIED CURRENT AT TL=90C MAXIMUM OVERLOAD SURGE 8.3ms SINGLE HALF SINEWAVE TYPICAL JUNCTION CAPACITANCE (NOTE 1) TYPICAL THERMAL RESISTANCE (NOTE 2) STORAGE TEMPERATURE RANGE OPERATING TEMPERATURE RANGE SYMBOL VRRM VRMS VDC ES1A 50 35 50 ES1B 100 70 100 ES1D 200 140 200 ES1E 300 210 300 ES1G 400 280 400 ES1J 600 420 600 UNITS V V V IO 1.0 A IFSM 30 A CJ JL TSTG TOP ELECTRICAL CHARACTERISTICS (AT TA =25C UNLESS OTHERWISE NOTED) CHARACTERISTICS SYMBOL ES1A MAXIMUM FORWARD VOLTAGE AT 1.0A AND 25 VF MAXIMUM REVERSE CURRENT AT 25 IR MAXIMUM REVERSE RECOVERY TIME (NOTE 3) TRR MARKING ES1A 15 10 ES1B 0.98 ES1D ES1E ES1G ES1J 1.75 ES1G ES1J 1.25 10 20 ES1B ES1D ES1E NOTE 1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V 2. THERMAL RESISTANCE FROM JUNCTION TO TERMINAL 5.0mm2 (.013 mm THICK) LAND AREAS 3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A 14-55 PF C/W 30 -55 TO + 150 -55 TO + 125 UNITS V A nS RATINGS AND CH

ES1D Features 0.181 (4.597) 0.157 (3.988) * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. 0.062 (1.575) 0.055 (1.397) 2 SMA/DO-214AC 0.096 (2.438) 0.078 (1.981) COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol 0.114 (2.896) 0.098 (2.489) 0.208 (5.283) 0.188 (4.775) 0.060 (1.524) 0.030 (0.762) 1.0 Ampere Superfast Rectifiers IO 1 0.008 (0.203) 0.004 (0.102) 0.012 (0.305) 0.006 (0.152) TA = 25C unless otherwise noted Parameter Value Units 1.0 A 30 A 1.47 11.76 85 W mW/C C/W RJA Average Rectified Current @ TA = 120C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient** RJL Thermal Resistance, Junction to Lead** 35 C/W Tstg Storage Temperature Range -50 to +150 C TJ Operating Junctio

ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ES1A - ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* TA = 25C unless otherwise noted Value Parameter Symbol 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the s

C10D-060 1MBG10D-060 1MBH10D-060 1MBI60D-090 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 2 Fairchild Closest Equivalent Industry 1.5KE82A 1.5KE91A ES1B ES1D SS14 SS16 UF4002 UF4003 UF4004 UF4005 UF4006 SB130 SB140 SB150 SB160 MBR1535CT DF005M DF005S DF01M DF01S DF02M DF02S DF04M DF04S DF06M DF06S DF08M DF08S DF10M DF10S DF02M DF04M SGP10N60RUF SGP10N60RUFD SGW10N60RUFD SGH10N60RUFD SGL60N90D 1N4447 1N4448 1N3070 1N3070 1N4448 1N4448 1N4448 1N4148 1N4148 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4148 1N4454 1N4454 1N4448 1N4148 1N4148 1N4148 1N4148 1N127 1N127A 1N128 1N128A 1N132 1N133 1N134 1N135 1N1374 1N139 1N140 1N141 1N142 1N143 1N144 1N1451 1N1507A 1N1508A 1N1509A 1N1510A 1N1511A 1N1512A 1N1513A 1N1514A 1N1515A 1N1516A 1N1517A 1N1518A 1N1519A 1N1520A 1N1521A 1N1522A 1N1523A 1N1524A 1N1525A 1N1526A 1N1527A 1N1528A 1N1744A 1N175 1N1765A 1N1766A 1N1767A 1N1768A 1N1769A 1N1770A 1N1771A 1N17

0C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1A ES1A 50V 35V 50V ES1B ES1B 100V 70V 100V ES1C ES1C 150V 105V 150V ES1D ES1D 200V 140V 200V ES1G ES1G 400V 280V 400V ES1J ES1J 600V 420V 600V ES1K ES1K 800V 560V 800V ES1M ES1M 1000V 700V 1000V DO-214AC (SMAJ) (High Profile) H Cathode Band J A E ES1A-D ES1G-K ES1M Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time ES1A-D ES1G-K ES1M Typical Junction Capacitance IF(AV) 1.0A D G TJ = 75C IFSM 30A 8.3ms, half sine VF .975V 1.35V 1.60V IFM = 1.0A; TJ = 25C* IR 5A 100A TJ = 25C TJ = 100C Trr 50ns 60ns 100ns CJ 45pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V B F Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage C DIMENSIONS DIM

0 C6 100 F C7 10 F C8 1 F 5 V/580 mA GND C9 0.1 F 1000 pF H2019FNLT L1 LPS4012-103MLB PGND R5 3300 pF C2 C12 22 F 100 V R6 75.0 3300 pF C13 2.2 F 100 V R17 100 k 0.125 W VDD C14 0.1 F 100 V D8 J6 2 1 SDRN2 C15 100 F TP13 LDT0565-50 ES1D-13-F 200 V FB1 30 TP15 9 10 1 TP1 PGND 3.3 V 6 8 7 2 75.0 3_3V C1 C16 100 F C17 10 F C18 1 F 3.3 V/900 mA GND C19 0.1 F PGND VDD PDRN TP3 D1 C20 330 pF PGND Q6 CSD17507Q5A 7,8 5,6, D2 FDS89161 Q1A R2 1.0 M R3 1.0 M R4 232 k R7 232 k 4 2 D4 D11 1 3 CS C28 330 pF TP4 PGND MMSD4148T1G Q3 FDC86244 150 V R19 GATE C27 330 pF R18 10 TP6 FDS89161 Q1B D7 4 GATE 7, 8 1,2,3 5, 6 10 R16 10 3_3V TP5 PGND R21 CS 825 R20 0 PGND TP7 C3 1000pF R22 0.82 0.125 W CTL GAT2 TP8 VB TP9 D12 D13 R23 10.0k C21 PGND R10 1.0 M VSS R25 C30 330 pF FB2 30 C26 0.1 F 100 V D10 SMAJ58A VSS AUX INPUT VDD R32 AUX FB3 30 J4 3.01 k AUX D3 68.1 k C4 1000 pF ES1D-13-F 200 V

X7R ceramic capacitor (0402) Murata GRM155R71C104K C12, C13 2 10FF Q10%, 10V X7R ceramic capacitors (1206) Murata GRM31CR71A106K D1 1 40V, 1.1A Schottky diode (PowerDI-123) Diodes Inc. DFLS140 (Top Mark: F04) D2 1 200V, 1A diode (SMA) Diodes Inc. ES1D (Top Mark: ES1D) JU1, JU2 2 2-pin headers ________________________________________________________________ Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. Evaluates: MAX16922 General Description MAX16922 Evaluation Kit Evaluates: MAX16922 Component List (continued) Designation Qty JU3, JU4 2 3-pin headers Description Designation Qty R2, R3 2 20kI Q5% resistors (0402) L1 1 L2 Description 4.7FH, 2.0A inductor TDK LTF5022-4R7N2R0 U1 1 1 2.2FH, 1.32A inductor Coilcraft EPL2014-222MLB Dual step-down converter (20 TQFN-EP*) Maxim MAX16922ATPE/ V+ -- 4 Shunts PGND, VBAT 2 Uninsul

8 3 Q2 Si4480DY R20 7 1 3 5 7 9 10 3 9 4 8 5 7 6 1 3 5 7 9 C17 10uF, 25V C5 2.2uF, 100V 2 4 6 8 10 2 4 6 8 10 JS4 In Proto: R23 = 20.5k R22 = 1.1k C5 = 2 x 1uF / 100V in parallel R4 = 3 x 10k in series Q2 is upside-down D12 B1100B D4 ES1D CONN SOCKET 5x2 C19 4.7uF, 50V T1C T1D T1F VP5 T1E T1B .015, 5% VBHI VBLO DC_Input_Diode VDD 4 5 11 2 12 1 T1: 10uH T1A R15 10k R4 30k JS5 C16 10uF, 25V L2 10uH L2 and C16 optional for lower output noise. CONN SOCKET 5x2 -24Vdc -96Vdc Figure 6. Cost-Optimized Dual Output Battery Supply 9 7 5 3 1 1 3 5 7 9 1 3 5 7 9 Rev. 0.2 2 4 6 8 10 8 2 4 6 8 10 JP1 VBLO VBHI AN74 AN74 4. Cost-Optimized Dual Output Battery Supply Bill of Materials Reference C18 C5 C22, C14 C16*, C17 C19 C20 C21 C24 D3 D4 D12 L2* Q2 R4 R13 R21, R14 R15 R17 R18 R20 R22 R23 T1 U2 Description 0.1 F, 25 V, X7R 2.2 F, 100 V, X7R 1 nF, 25 V, X7R 10 F, 25 V, X5R 4.7 F, 50 V, X7R 100 pF, 50 V, NP0 4.7 F, 10 V, X5R 330 F, 35 V 40 V, 3 A 200 V, 1

TC04A-200. In the case of four twisted pairs, the individual loop currents would have to be limited to 50mA. a 2000 Semtech Corp. Comp onent Par t N umb er Source Descrip tion T VS TC04A -200 Semtech Battery Tracking TransClamp Steering Diod es ES1D GSI Ultrafast Sur face Mount Rectifier LFR A LFR-2 IR C Telecommunications Line Feed Resistor 6 www.semtech.com TC04A-200 PROTECTION PRODUCTS Outline Drawing - SO-16 WB 2 2 .415 3 Note 1: Controlling dimension : Inch (unless other wise specified). Note 2: Dimensions A and B do not include mold protrusions. Mold protrusions are .006" max. Note 3: Dimensions apply before solder dip on parts requiring solder dip. 3 Land Pattern - SO-16 WB Note 1 : Controlling dimension is millimeters Note 2 : Grid placement courtyard is 22 x 24 elements (11mm x 12mm) in accordance with the international grid detailed in IEC publication 97. a 2000 Semtech Corp. 7 www.semtech.com TC04A-200 PROTECTION PRODUCTS Ordering Information Par t Numbe

Bootstrap series resistor - 1/4 W 1.5 4.7 470 pF 15 nS PVDD_x Half-bridge supply voltage GVDD_x Bootstrap snubber - 1/4 W DCLMP Ultra-Fast Recovery Clamping Diode, Average forward current = 1A, Maximum repetitive reverse voltage = 200V (ES1D, mfg:Fairchild) DTVS Transient Voltage Suppressor, 600W @ 1mS (P6SMB62AT3, mfg: ON Semiconductor) CPVDD PVDD Close Decoupling Capacitor, two capacitors RAGND AGND resistor - 1/4 W R Optional external pullup resistor to +3.3V or +5 V for SD and OTW TJ Junction temperature H 10 192 RCBS (1) V 4-16 384 50 3.3 kHz ns 62 V 100 nF 3.3 4.7 k 0 125 C GVDD operation below 10.8 V significantly reduces efficiency of the output MOSFET stage and requires a larger heatsink. For the purpose of noise margin, the UVP level is set lower to provide an increased noise margin, however, TI recommends a nominal dc voltage of 12 V for GVDD. AUDIO CHARACTERISTICS Audio frequency = 1 kHz, PVDD_x = 50 V, GVDD_x = 12 V, VDD = 12 V,

ES1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 150 V, 200 V For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. IFSM 30 A MECHANICAL DATA trr 15 ns VF at IF 0.92 V TJ max. 150 C Package DO-214AC (SMA) Diode variations Single die Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial g

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W

6M Venkel 2 C2 C3 0.1uF X7R C0805 C0805X7R101-104K Venkel 3 C4 C5 C6 200pF C0G C0805 C0805C0G500-201K Venkel 1 D1 5.6V Zener DO-214AA 1SMB5919BT3 On Semi 1 D2 RED SMT, ChipLED LED-HSMX-C170 HSMZ-C170 Avago Technologies 1 D3 ES1D Fast DO-214AC ES1D Diodes Inc. 5 J1 J3 J4 J6 J7 CONN TRBLK 2 TERM BLK MALE CONN-TB-1757242 1757242 PHOENIX CONTACT 1 J2 Header 1x3 Header CONN-1X3 TSW-103-07-G-S Samtec 9 JP1 JP2 JP3 JP4 JP5 JP6 JP7 JP8 JP9 JUMPER Header CONN1X2 TSW-102-07-T-S Samtec 5 JP10 JP11 JP12 JP13 JP14 PLUG TERM BLK 1757019 Phoenix Contact 5 JS1 JS2 JS3 JS4 JS5 Jumper Shunt Shunt SHUNT SNT-100-BK-T Samtec 1 LB1 OPN: Si8751_EV B POLYIMIDE, WHITE PTL-14-477 LABEL-Si8751_EVB Silabs 4 MH1 MH2 MH3 MH4 4-40 HDW MH-125NP|MH-125 NSS-4-4-01 Richco Plastic Co 1 PCB1 N/A Si875x_EVB REV 1.0 SiLabs 3 Q2 Q4 Q5 FDD6N25 N-CHNL DPAK-G2SD FDD6N25 Fairchild 2 R1 R9 0 ThickFilm R0402|R0402L CR0402-16W-00

C17 CAP CER 10F 16V 1206 MURATA GRM31CR71C106KAC7L C18, C20 CAP CER 1F 100V 1206 TDK C3216X7R2A105M C19 CAP CER 2.2F 6.3V 0603 TDK C1608X5R0J225M C22 CAP CER 470pF 100V 0603 TDK C1608C0G2A471J 120V DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D 230V D1 DIODE FAST 400V 1A DO-214AC FAIRCHILD ES1G D2 DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D D3, D5 DIODE ULTRAFAST 100V 0.2A SOT-23 FAIRCHILD MMBD914 D4 DIODE DUAL SCHOTTKY 20V 0.5A SOT-23 NXP SEMI PMEG3005CT,215 120V DIODE TVS 150V 600W UNI SMB LITTLEFUSE SMBJ150A 230V DIODE TVS 220V 600W UNI SMB LITTLEFUSE SMBJ220A D7 DIODE ULTRAFAST 600V 1A SMA FAIRCHILD ES1J D8 DIODE ZENER 24V 1.5W SMA MICRO-SEMI SMAJ5934B-TP D9 DIODE SCHOTTKY 20V 3A SMA FAIRCHILD ES2AA-13-F D10 DIODE RECT 600V 0.5A Minidip COMCHIP HD06 D11, D12 DIODE ZENER 10V 500mW SOD-123 FAIRCHILD MMSZ5240B D13 DIODE ULTRAFAST 70V 0.2A SOT-23 FAIRCHILD BAV99 D14 DIODE ZENER 3.3V 500mW SOD-123 ON-SEMI MMSZ3V3T1G D

Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 110C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Drop Symbol ES1A ES1B ES1C ES1D ES1G Unit VRRM VRWM VR 50 100 150 200 400 V VR(RMS) 35 70 105 140 280 V IO 1.0 A IFSM 30 A 1.25 @ IF = 0.6A @ IF = 1.0A VFM @ TA = 25C @ TA = 100C IRM 5.0 200 A Reverse Recovery Time (Note 1) trr 20 ns Typical Total Capacitance (Note 2) CT 10 pF RJT 40 C/W Tj, TSTG -65 to +150 C Peak Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance, Junction to Terminal (Note 3) Operating and Storage Temperature Range Ordering Information Notes: 0.90 0.98 V (Note 4) Device* Packaging Shipping ES1x-13 SMA 5000/Tape & Reel 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Unit mounted on PC board with

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W

ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s DO-214AC (SMA) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high relia

nction Temperature Range: -65C to +175C * Storage Temperature Range: -65C to +175C SMA (DO-214AC) * Maximum Thermal Resistance: 35C/W Junction to Lead * Maximum Thermal Resistance: 85C/W Junction to Ambient MCC Part Number Device Marking ES1A-L ES1B-L ES1D-L ES1G-L ES1J-L ES1A ES1B ES1D ES1G ES1J Maximum Maximum DC Recurrent Maximum Blocking Peak Reverse RMS Voltage Voltage Voltage 50V 100V 200V 400V 600V 35V 70V 140V 280V 420V H J 50V 100V 200V 400V 600V Cathode Mark A E IF(AV) 1.0A TL=125C Peak Forward Surge Current IFSM 30A 8.3ms,Half Sine Maximum Instantaneous Forward Voltage ES1A-L-ES1D-L ES1G-L ES1J-L VF Maximum DC Reverse Current At Rated DC Blocking Voltage IR Maximum Reverse Recovery Time Typical Junction Capacitance 0.95V 1.25V 1.70V IFM=1.0A; D F B G Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current C DIM A B C D E F G H J DIMENSIONS INCHES MM MIN MAX MIN MAX 0.079 0.096 2.00 2.44 0.050 0.064 1

omponent per system needed. 12 Preliminary Rev. 0.96 ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 Si3230 VDC F1 SDCH R19 1 Note 1 C25 2 10uF R181 C14 2 0.1uF R201 SDCL Si3230 C10 0.1 F R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10uF R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 17 or from App Note 45. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 4. Si3230 DC-DC Converter Circuit Table 12. Si3230 DC-DC Converter Component Values Component (s) Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10 0.1 F, 50 V, X7R, 20% Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% R17 1/10 W, 5% (See AN45 or Table 17 for value selection) R18 1/4 W, 5% (See AN45 or Table 17 for value selection) R19,R20 1/10 W, 1% (See AN45 or Table 17 for value selection) F1

Zetex FMMT5401 Central Semi CZT5551, ON Semi 2N5551 ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 Si3216/Si3215 VDC F1 SDCH R191 Note 1 C142 0.1uF R201 SDCL C10 22nF Si321x C252 10uF R181 R16 200 Q8 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10uF R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 20 or from App Note 45. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 13. Si321x BJT/Inductor DC-DC Converter Circuit Table 15. Si321x BJT/Inductor DC-DC Converter Component Values Component (s) Value Supplier C9 C10* C14* C25* R16 R17 R18 R19,R20 F1 D1 10 F, 100 V, Electrolytic, 20% 0.1 F, X7R, 20% 0.1 F, X7R, 20% 10 F, Electrolytic, 20% 200 , 1/10 W, 5% 1/10 W, 5% (See AN45 or Table 20 for value selection) 1/4 W, 5% (See AN45 or Table 20 for value selection) 1/10 W, 1% (See AN45 or Table 20 for value selection) Fuse Ultra Fast Recovery 200 V, 1A Rectifier Panasonic Murata, Johanson, Novacap

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE 1.0 Ampere Superfast Rectifiers Absolute Maximum Ratings* Symbol IF(AV) IFSM PD RJA TA = 25C unless otherwise noted Parameter Value Units 1.0 A 30 A 1.47 11.76 85 W mW/C C/W Average Rectified Current @ TA = 120C Non-repetitive Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient** RJL Thermal Resistance, Junction to Lead** 35 C/W Tstg Storage Temperature Range -50 to +150 C TJ Operating Junction Temperature -50 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electric

Component(s) ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 *Note: Only one component per system needed. VDC F1 SDCH R191 See Note 1 R201 SDCL C10 0.1 F Si3215 C142 0.1 F C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV See Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 21 or from "AN45: Design Guide for the Si3210 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3215 BJT/Inductor DC-DC Converter Circuit Rev. 0.92 17 Si3215 Table 13. Si3215 BJT/Inductor DC-DC Converter Component Values Component(s) Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10 0.1 F, 50 V, X7R, 20% Murata, Johanson, Novacap, Venkel C141 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 01 d. ha des s

imum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA=25C unless otherwise specified Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM @TA = 25C @TA = 100C IRM 5.0 500 A Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 10 pF RJL 35 C/W Tj, TSTG -65 to +150 C Peak Reverse Current At Rated DC Blocking Voltage @TL = 120C D Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 0.95 1.25 1.7 V Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse volt

Voltage DC Blocking Voltage (Note 6) Symbol VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @ TT = +110C IO Non-Repetitive Peak Forward Surge Current 8.3ms IFSM Single Half Sine-Wave Superimposed on Rated Load ES1A ES1B ES1C ES1D ES1G Unit 50 100 150 200 400 V 35 70 105 1.0 140 280 V A 30 A Thermal Characteristics Characteristic Typical Thermal Resistance, Junction to Terminal (Note 5) Operating and Storage Temperature Range Symbol RJT TJ, TSTG Value 25 -55 to +150 Unit C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Minimum Reverse Breakdown Voltage (Note 6) IR = 5A IF = 0.6A Maximum Forward Voltage Drop IF = 1.0A TA = +25C Peak Reverse Current at Rated DC Blocking Voltage (Note 6) TA = +125C Maximum Reverse Recovery Time (Note 7) Typical Total Capacitance (Note 8) Notes: Symbol V(BR)R ES1A 50 VFM IRM tRR CT ES1B 100 ES1C 150 0.90 0.92 5.0 200 25 20 ES1D 200 ES1G 1.25 Unit V V A n

ES1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated pellet chip junction * Ultrafast recovery times for high efficiency Available * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMA (DO-214AC) * AEC-Q101 qualified available - Automotive ordering code: P/NHE3 or P/NHM3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 30 A trr 15 ns VF at IF 0.92 V TJ max. 150 C Package SMA (DO-214AC) Diode variations Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 9

ES1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated pellet chip junction * Ultrafast recovery times for high efficiency Available * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMA (DO-214AC) * AEC-Q101 qualified available - Automotive ordering code: P/NHE3 or P/NHM3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 30 A trr 15 ns VF at IF 0.92 V TJ max. 150 C Package SMA (DO-214AC) Diode variations Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 9

ES1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated pellet chip junction * Ultrafast recovery times for high efficiency Available * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMA (DO-214AC) * AEC-Q101 qualified available - Automotive ordering code: P/NHE3 or P/NHM3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 30 A trr 15 ns VF at IF 0.92 V TJ max. 150 C Package SMA (DO-214AC) Diode variations Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 9

ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V Tj max. 150 C DO-214AC (SMA) Features Mechanical Data * * * * * * * * Case: DO-214AC (SMA) Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Low profile package Ideal for automated placement Glass passivated chip junction Ultrafast recovery times for high efficiency Low forward voltage, low power losses High forward surge capability Meets MSL level 1, per J-STD-020C Solder Dip 260 C, 40 seconds Typical Applications For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and Telecommunication Maximum Ratings TA = 25 C unl

ES1D SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere FEATURES DO-214AC 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.090 (2.29) 0.078 (1.98) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mount applications Low profile package Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diodes Ultrafast recovery times for high efficiency Low forward voltage Low leakage current Glass passivated chip junction High temperature soldering guaranteed: 250C/10 seconds on terminals MECHANICAL DATA 0.060 (1.52) 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Dimensions in inches and (millimeters) Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode en

10/Si3211 VDC F1 SDCH R191 R201 SDCL R16 200 Q7 FZT953 N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 01 d. ha des s ig be ns en . Si3210 C10 0.1 F C142 0.1 F C252 10 F Note 1 R181 DCFF DCDRV Q8 2N2222 R17 L1 D1 ES1D VBAT C9 10 F Note 1 GND Notes: 1. Values and configurations for these components can be derived from "AN45: Design Guide for the Si3210 DC-DC Converter" or Table 21. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3210 BJT/Inductor DC-DC Converter Circuit 18 Rev. 1.61 Si3210/Si3211 Table 13. Si3210 BJT/Inductor DC-DC Converter Component Values Value Package Supplier C9 10 F, 100 V, Electrolytic, 20% Radial Panasonic C10 0.1 F, 50 V, X7R, 20% 1210 Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% 1210 Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Radial Panasonic R16 200 , 1/10 W, 5% 805 N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 0

ES1D ES1G Features * * * * * Glass Passivated Die Construction Super-Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly Mechanical Data * * * * * * * * SMA B A Case: Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: Type Number & Date Code: See Below Ordering Information: See Below Weight: 0.064 grams (approx.) Dim Min Max A 2.29 2.92 B 4.00 4.60 C 1.27 1.63 D 0.15 0.31 C D J H Maximum Ratings and Electrical Characteristics G E E 4.80 5.59 G 0.10 0.20 H 0.76 1.52 J 2.01 2.62 All Dimensions in mm @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak

available upon request by adding suffix "-HF" Maximum Ratings * * 1 Amp Super Fast Recovery Rectifier 50 to 600 Volts DO-214AC (SMA) (LEAD FRAME) Operating Temperature: -65 to +175 Storage Temperature: -65 to +175 H MCC Part Number ES1A-L ES1B-L ES1D-L ES1G-L ES1J-L Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum RMS Voltage Maximum DC Blocking Voltage J 35V 70V 140V 280V 420V 50V 100V 200V 400V 600V A Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ES1A-L-ES1D-L ES1G-L ES1J-L Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) 1.0A TL= 125 IFSM 30A 8.3ms, half sine E C D B F G VF .95V 1.25V 1.70V IFM = 1.0A; IR 5A 80A TA = 25 TA = 100 Trr 35ns CJ 15pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V DIMENSIONS DIM A B C D E F G H J INCHES MIN

n free available upon request by adding suffix "-HF" Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1

IN4 PSI5_4 Page[5] IN5 PSI5_3 Page[5] Page[5] PSI5_2 Page[5] Page[5] PSI5_1 Page[5] LIN_GND LIN CON_1_PWR 1 3 2 IN9 IN8 IN7 IN6 IN5 IN4 IN3 IN2 IN1 PSI5_4 PSI5_3 PSI5_2 PSI5_1 VBAT 1 R48 1.0K D12 SM6T33CA C89 220PF 50V 2 ES1D-13-F D13 A C75 1uF + 1 2 B82473M1223K000 OUT1_S OUT1_D OUT2_S OUT2_D VPWR OUT1_S OUT1_D OUT2_S OUT2_D LIN CAP ALEL 1UF 50V 20% -- SMT PANASONIC EEEHC1H1R0R C OFFPAGE - CONNECTOR (PAGE 5) Page[5] Page[5] Page[5] Page[5] C C78 0.1UF A 22UH C76 100uF TP2 220UH EPCOS B82473A1224K000 C142 0.022UF L4 0.01 Ohms < ESR < 1 Ohm BUCKSW L4 BSTCOMP1 CAP ALEL 100uF 50V 20% -- SMD NICHICON UUD1H101MNL1GS + VPWR VPWR TP5 C86 330PF C143 0.022UF VCC_5V C144 0.022UF R50 10K R52 10K R51 10K 0.05 Ohms < ESR < 0.4 Ohms Page[3,8] Page[3,8] Page[3,8] Page[3] Page[3] Page[3] DSPI_0_SO DSPI_0_SI DSPI_0_SCK MCU_CLK DSPI_0_CS0 SATSYNC + C77 220uF VBST C80 0.22UF 50V TP3 C85 10nF 100K R49 C145 0.022UF Page[3,8] Pag

est Conditions Repetitive peak reverse voltage g =Working peak reverse voltage DC Bl ki voltage lt =DC Blocking Peak forward surge current Average forward current Junction and storage temperature range TT=110C Type Symbol Value Unit ES1A ES1B ES1C ES1D ES1G VRRM =VRWM VR =V 50 100 150 200 400 30 1 -65...+150 V V V V V A A C IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to terminal Rev. A2, 24-Jun-98 Test Conditions IF=0.6A IF=1A IF=1A TA=25C TA=100C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz on PC board with 5.0mm2 Type Symbol Min Typ Max Unit ES1A-ES1D VF 0.90 V ES1A-ES1D VF 0.98 V ES1G VF 1.25 V IR 5.0 mA IR 200 mA trr 20 ns CD 10 pF RthJT 40 K/W 1 (4) ES1A-ES1G Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFSM - Peak Forward Surge Current ( A ) IFAV - Average Forward Current ( A ) 1.5

C17 CAP CER 10F 16V 1206 MURATA GRM31CR71C106KAC7L C18, C20 CAP CER 1F 100V 1206 TDK C3216X7R2A105M C19 CAP CER 2.2F 6.3V 0603 TDK C1608X5R0J225M C22 CAP CER 470pF 100V 0603 TDK C1608C0G2A471J 120V DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D 230V D1 DIODE FAST 400V 1A DO-214AC FAIRCHILD ES1G D2 DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D D3, D5 DIODE ULTRAFAST 100V 0.2A SOT-23 FAIRCHILD MMBD914 D4 DIODE DUAL SCHOTTKY 20V 0.5A SOT-23 NXP SEMI PMEG3005CT,215 120V DIODE TVS 150V 600W UNI SMB LITTLEFUSE SMBJ150A 230V DIODE TVS 220V 600W UNI SMB LITTLEFUSE SMBJ220A D7 DIODE ULTRAFAST 600V 1A SMA FAIRCHILD ES1J D8 DIODE ZENER 24V 1.5W SMA MICRO-SEMI SMAJ5934B-TP D9 DIODE SCHOTTKY 20V 3A SMA FAIRCHILD ES2AA-13-F D10 DIODE RECT 600V 0.5A Minidip COMCHIP HD06 D11, D12 DIODE ZENER 10V 500mW SOD-123 FAIRCHILD MMSZ5240B D13 DIODE ULTRAFAST 70V 0.2A SOT-23 FAIRCHILD BAV99 D14 DIODE ZENER 3.3V 500mW SOD-123 ON-SEMI MMSZ3V3T1G D

component per system needed. 12 Preliminary Rev. 0.5 ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 Si3233 VDC F1 SDCH R19 1 Note 1 C14 2 0.1uF R201 SDCL C10 0.1 F Si3233 C25 2 10uF R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10uF R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 17 or from App Note 45. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 4. Si3233 DC-DC Converter Circuit Table 12. Si3233 DC-DC Converter Component Values Component(s) Value Supplier C9 10 F, 100 V, Electrolytic, 20%, low ESR (tan() < 0.08) Panasonic C10 0.1 F, 50 V, X7R, 20% Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20%, low ESR (tan() < 0.08) Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% R17 1/10 W, 5% (See AN45 or Table 17 for value selection) R18 1/4 W, 5% (See AN45 or Table 17 for value selection) R19,R20 1/10 W, 1%

or Table 18 for value selection) R32* 10 k, 1/10 W, 5% *Note: Only one component is necessary on each signal in the system. VDC F1 SDCH R191 Note 1 C142 0.1 F R201 SDCL C10 0.1 F Si321x C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 20 or from "AN45: Design Guide for the Si3210/15/16 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 13. Si321x BJT/Inductor DC-DC Converter Circuit Rev. 1.0 23 Si3216 Table 15. Si321x BJT/Inductor DC-DC Converter Component Values Component(s) Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% R17 1/10 W, 5% (See "AN45: Design Guide for The Si3210 DCDC Converter" or Table 20 for value s

Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead x x x MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Note: D B F Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A Ta = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1A-D .975V IFM = 1.0A; ES1G-J 1.35V TJ = 25qC* ES1K~M 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time Trr IF=0.5A

or Table 18 for value selection) R32* 10 k, 1/10 W, 5% *Note: Only one component is necessary on each signal in the system. VDC F1 SDCH R191 Note 1 C142 0.1 F R201 SDCL C10 0.1 F Si321x C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 20 or from "AN45: Design Guide for the Si3210/15/16 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 13. Si321x BJT/Inductor DC-DC Converter Circuit Preliminary Rev. 0.91 23 Si3216 Table 15. Si321x BJT/Inductor DC-DC Converter Component Values Component(s) Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% R17 1/10 W, 5% (See "AN45: Design Guide for The Si3210 DCDC Converter" or Table 2

ast Recovery Times For High Efficiency UL Flammability Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Revision: 7 D B F Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A Ta = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1A-D .975V IFM = 1.0A; ES1G-J 1.35V TJ = 25qC* ES1K~M 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.

ns in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL ES1A ES1B ES1C ES1D ES1G ES1J UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 V CHARACTERISTICS Maximum Average Forward Rectified Current @TL =110 C Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) I(AV) 1.0 A IFSM 30 A Maximum forward Voltage at 1.0A DC VF Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ=125 C IR 1.25 0.92 1.30 5.0 200 V uA Maximum Reverse Recovery Time (Note 1) TRR 25 35 ns Typical Reverse Recovery Time TRR 20 30 ns Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note

00 2000 RS2A S2A 1PS79SB17 RS2AA 1.5 100 US1B RS1B 200 dual series PMBD353 2000 ES3A US3A RS3A S3A RS2B ES3B US3B RS3B S3B ES3D US3D RS3D S3D ES3G US3G RS3G S3G US3J RS3J S3J US3K RS3K S3K US3M RS3M S3M S2B ES2B 2 ES1D 1.5 US1D RS1D S1D US2DA RS2DA S2DA RS2D S2D ES2D 2 3 1) 300 S1B RS2BA 1.5 1 brb129 PMBD354 ES1B 3 1PS66SB17 60 ES2A 2 1 triple isolated 30 IF max (A) 3 1PS76SB17 2 sym001 450 4.25 x 2.67 x 2.14 1 BAT17 4 SOD132 (SMB) Package Package 1 types in bold represent new products Diodes Schottky barrier diodes and rectifiers 1 ES1G US1G RS1G S1G US2GA RS2GA S2GA brb124 single 400 1PS70SB82 30 1PS10SB82 600 1PS88SB82 brb129 340 1 1 S2G 1 US1J RS1J S1J RS2J S2J 1.5 US2JA RS2JA S2JA US1K RS1K S1K RS2K S2K RS2KA S2KA RS1M S1M RS2M S2M RS2MA S2MA 3 1PS66SB82 1 800 dual series 15 RS2G ES2G 2 3 brb122 triple isolated 1.5 1.5 3 1 1PS70SB84 1000 brb124 1.5 3 dua

riation of the RSENSE resistor, the coil value and the internal oscillator frequency (ROCS resistor). The flyback diode that carries the load current during the passive state (driver OFF) should be a fast switching and low intrinsic capacitance diode like ES1D or BYG80 in order to avoid parasitic spikes on RSENSE. The diode must be able to carry the LED current flowing during the OFF time of the driver. The n-channel MOSFET should have low intrinsic capacitances, a drain-source voltage suitable for the application and must be able to carry the current flowing through the LED(s) during the ON time. To decrease the time of transistor switching and to improve the thermal behaviour of the module, the lines between transistor and IC should be minimised. For applications that use an NTC resistor for temperature sensing, the NTC value has to be selected according to the application requirements. For most applications, a NTC value up to 470k will be suitable. In case of longer lines between the IC and th

ES1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A w

asonic Coilcraft ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 *Note: Only one component per system needed. VDC F1 SDCH R191 See Note 1 R201 SDCL C10 0.1 F Si3215 C142 0.1 F C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV See Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 21 or from "AN45: Design Guide for the Si3210 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3215 BJT/Inductor DC-DC Converter Circuit Rev. 0.92 17 Si3215 Table 13. Si3215 BJT/Inductor DC-DC Converter Component Values Component(s) Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10 0.1 F, 50 V, X7R, 20% Murata, Johanson, Novacap, Venkel C141 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% R17 1/10 W, 5% (See AN452 or Table 19 for value selection) R18 1/4 W, 5% (See AN45 or Tab

Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Note: D B F Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A Ta = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1A-D .975V IFM = 1.0A; ES1G-J 1.35V TJ = 25qC* ES1K~M 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Parameter Symbol Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W

Thru ES1J Maximum Ratings and Electrical Characteristics Rating 25 C Ambient Temperature Unless Otherwise Specified. Single Phase Half Wave, 60Hz , Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%. Characteristics Symbol ES1A ES1B ES1D ES1G ES1J Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 V Maximum RMS Voltage VRMS 35 70 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 V Maximum Average Forward Rectified Current @TC=110 C IF(AV) 1.0 A IFSM 30 A Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous At 1.0A DC Maximum DC Reverse Current @Tj=25 C At Rated DC Blocking Voltage @Tj=125 C Maximun Reverse Recocery Time(Note1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range VF IR 5.0 200 V uA 35 nS CJ RqJL 10 PF 25 C/W TJ -55 to+150 C TSTG -55 to+150

ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s DO-214AC (SMA) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high relia

C17 CAP CER 10F 16V 1206 MURATA GRM31CR71C106KAC7L C18, C20 CAP CER 1F 100V 1206 TDK C3216X7R2A105M C19 CAP CER 2.2F 6.3V 0603 TDK C1608X5R0J225M C22 CAP CER 470pF 100V 0603 TDK C1608C0G2A471J 120V DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D 230V DIODE FAST 400V 1A DO-214AC FAIRCHILD ES1G D2 DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D D3, D5 DIODE ULTRAFAST 100V 0.2A SOT-23 FAIRCHILD MMBD914 D4 DIODE DUAL SCHOTTKY 20V 0.5A SOT-23 NXP SEMI PMEG3005CT,215 120V DIODE TVS 150V 600W UNI SMB LITTLEFUSE SMBJ150A 230V C4 D1 D6 DIODE TVS 220V 600W UNI SMB LITTLEFUSE SMBJ220A D7 DIODE ULTRAFAST 600V 1A SMA FAIRCHILD ES1J D8 DIODE ZENER 24V 1.5W SMA MICRO-SEMI SMAJ5934B-TP D9 DIODE SCHOTTKY 20V 3A SMA FAIRCHILD ES2AA-13-F D10 DIODE RECT 600V 0.5A Minidip COMCHIP HD06 D11, D12 DIODE ZENER 10V 500mW SOD-123 FAIRCHILD MMSZ5240B D13 DIODE ULTRAFAST 70V 0.2A SOT-23 FAIRCHILD BAV99 D14 DIODE ZENER 3.3V 500mW SOD-123 ON-SEMI MMSZ

inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current VRRM VRMS VDC ES1A 50 35 50 ES1B ES1C ES1D ES1G 100 70 100 150 105 150 200 140 200 400 280 400 UNIT V V V @TL =110 C I(AV) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) IFSM 30 A Maximum forward Voltage at 1.0A DC VF 0.92 1.25 V IR 5.0 200 uA TRR 25 ns Typical Junction Capacitance (Note 2) CJ 10 pF Typical Thermal Resistance (Note 3) R0JL Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C Maximum Reverse Recovery Time (Note 1) Operating Temperature Range Storage Temperature Range 25 C/W TJ -55 to +150 C TSTG -55 to +150 C NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.The

ns in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL ES1A ES1B ES1C ES1D ES1G ES1J UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 V CHARACTERISTICS Maximum Average Forward Rectified Current @TL =110 C Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) I(AV) 1.0 A IFSM 30 A Maximum forward Voltage at 1.0A DC VF Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ=125 C IR 0.92 1.25 1.30 5.0 200 V uA Maximum Reverse Recovery Time (Note 1) TRR 25 35 ns Typical Reverse Recovery Time TRR 20 30 ns Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note

verse Voltage DC Blocking Voltage (Note 5) RMS Reverse Voltage Average Rectified Output Current @ TT = 110C Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load Symbol VRRM VRWM VR VR(RMS) IO ES1A ES1B ES1C ES1D ES1G Unit 50 100 150 200 400 V 35 70 105 1.0 140 280 V A 30 IFSM A Thermal Characteristics Characteristic Typical Thermal Resistance, Junction to Terminal (Note 4) Operating and Storage Temperature Range Symbol RJT TJ, TSTG Value 25 -55 to +150 Unit C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic Maximum Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage (Note 5) Maximum Reverse Recovery Time (Note 6) Typical Total Capacitance (Note 7) Symbol IF = 0.6A IF = 1.0A TA = 25C TA = 125C ES1A ES1B ES1C 0.90 0.92 VFM ES1D ES1G 1.25 5.0 200 25 20 IRM trr CT Unit V A ns pF 4. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat

imum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA=25C unless otherwise specified Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM @TA = 25C @TA = 100C IRM 5.0 500 A Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 10 pF RJL 35 K/W Tj, TSTG -65 to +150 C Peak Reverse Current At Rated DC Blocking Voltage @TL = 120C D Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 0.95 1.25 1.7 V Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V D

i r n tin 32 ew u e 01 d. ha des s ig be ns en . R1,R3 *Note: Only one component is necessary on each signal in the system. VDC F1 SDCH R191 Note 1 C142 0.1 F R201 SDCL C10 0.1 F Si321x C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 20 or from "AN45: Design Guide for the Si3210/15/16 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 13. Si321x BJT/Inductor DC-DC Converter Circuit Rev. 1.0 23 Si3216 Table 15. Si321x BJT/Inductor DC-DC Converter Component Values Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 01 d. ha des s ig be ns en . Co

Cathode band and type number (No '-LT' Suffix) Maximum Ratings * * 1 Amp Super Fast Recovery Rectifier 50 to 600 Volts DO-214AC (SMA) (LEAD FRAME) Operating Temperature: -65 to +175 Storage Temperature: -65 to +175 H MCC Part Number ES1A-L ES1B-L ES1D-L ES1G-L ES1J-L Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum RMS Voltage Maximum DC Blocking Voltage J 35V 70V 140V 280V 420V 50V 100V 200V 400V 600V A Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ES1A-L-ES1D-L ES1G-L ES1J-L Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) 1.0A TA= 55 IFSM 30A 8.3ms, half sine E C D B F G VF .95V 1.25V 1.70V IFM = 1.0A; IR 5A 80A TA = 25 TA = 100 Trr 35ns CJ 15pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V DIMENSIONS DIM A B C D E F G H J INCHES MIN

2 implement a resonant clamp circuit to catch and T1 + VIN 36-75 VDC A winding on the coupled inductor L4, along with diode D4 and capacitor C9, provide the DPA-Switch bias voltage. L4 3.5 H 9,10 7,8 R23 10 8,9 L1 1 H 2.5 A Q1 D20 R26 10 4,5 D1 ES1D R20 3.3 2,3 10 C9 150 pF 200 V R25 10 k C21-C22 4700 pF R21 10 R24 10 Q4 C23-C26 100 F 10 V 6,7 5 U1 DPA425R D C9 4.7 F 16 V VR1 SMBJ 150 A X F R3 15 k 1% C5 0.22 F R4 1.0 C6 68 F 10 V RTN R12 15.9 k 1% C16 100 nF D3 BAV19WS R6 150 R12 5.1 C D2 ES1D S R10 8.66 k 1% U2 U2 PC267 N1T L CONTROL C28 1 F D4 R7 10 k DPA-Switch C27 1 F 6 C7 1 nF 1.5 kV C1-C3 1 F 100 V -VIN D21 VR21 15 V C20 Q2 R22 VR20 3.3 nF 10 k 15 V L2 220 H 3.3 V, 6 A (8 A pk) 3,4 Q3 1 R1 619 k 1% 1,2 5 V, 6 A (8 A pk) R9 220 C15 10 F 10 V C14 1 F U3 LM431 AIM3X R11 10.0 k 1% PI-3561-072203 Figure 1. DPA425R - 50 W, 5 V, 6 A and 3.3 V, 6 A DC-DC Converter. . DI-53 www.powerint.com July 2003 DI-53 Key Desi

S1A/11 625-US1A US1A/11 625-BYM12-100 BYM12-100/26 625-EGF1B EGF1B/17625-EGL41B EGL41B/46 625-ES1B ES1B/11 625-US1B US1B/11 625-BYM12-150 BYM12-150/26 625-EGF1C EGF1C/17625-ES1C ES1C/11 625-BYM12-200 BYM12-200/26 625-EGF1D EGF1D/17625-EGL41D EGL41D/46 625-ES1D ES1D/11 625-MURS120 MURS120/2 625-US1D US1D/11 625-BYM12-300 BYM12-300/26 625-EGL41F EGL41F/46 625-BYM12-400 BYM12-400/26 625-EGL41G EGL41G/46 625-MURS140 MURS140/2 625-MURS160 MURS160/2 1.0 Amp - Thru-Hole 625-UF4001 UF4001/1 625-UF4002 UF4002/1 625-UF4003 UF4003/1 625-UF4005 UF4005/1 625-UF4006 UF4006/1 625-UF4007 UF4007/1 2.0 Amp - Surface Mount 625-ES2A ES2A/2 625-ES2B ES2B/2 625-ES2D ES2D/2 625-ES2F ES2F/2 625-ES2G ES2G/2 2.0 Amp - Thru-Hole 625-EGP20A EGP20A/1 625-EGP20B EGP20B/1 625-EGP20D EGP20D/1 200 200 200 200 200 .10 .10 .10 .10 .10 .062 .062 .062 .062 .062 .043 .043 .043 .043 .043 .036 .036 .036 .036 .036 For quantities of 2000 and up, call for quote. A A A A A A 50 100 150 200 300 400 10 10 10 10 10 10 .

ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability DO-214AC (SMA) * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 C * Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. Terminals: Matte tin plated leads, solderable J

T1 = NA5920-AL D1 = 2 SERIES ES1J 85 2.2 EFFICIENCY (%) DISCHARGE CURRENT (A) VSW 10V/DIV Conversion Efficiency 90 70 400 VCELL = 2.5V VCELL = 3V VCELL = 3.6V VCELL = 4.2V 50 Average Discharge Current 3.0 ISW 2A/DIV 2s/DIV T1 = NA5743-AL D1 = ES1D VCELL = 3.6V VMODULE = 40V RCD SNUBBER = 4.99k, 22nF 8584 G31 T1 = NA5743-AL D1 = ES1D 2.8 2.4 30 30 8584 G34 Conversion Efficiency 90 T1 = NA6252-AL D1 = STPS3H100U 2.8 2.6 2.4 10 15 20 25 30 AUXILLARY VOLTAGE (V) 80 75 VCELL = 2.5V VCELL = 3V VCELL = 3.6V VCELL = 4.2V 2.2 2.0 T1 = NA6252-AL D1 = STPS3H100U 85 EFFICIENCY (%) DISCHARGE CURRENT (A) ISW 2A/DIV 40 50 60 70 80 MODULE VOLTAGE (VMODULE+ - VMODULE-) 8584 G33 Average Discharge Current VSW 10V/DIV 8 70 40 50 60 70 80 MODULE VOLTAGE (VMODULE+ - VMODULE-) VCELL = 2.5V VCELL = 3V VCELL = 3.6V VCELL = 4.2V 8584 G32 3.0 T1 = NA6252-AL D1 = STPS3H100U VCELL = 4.2V VAUX = 13.8V RCD SNUBBER = 4.99k, 22nF 80 75 VCELL = 2.5V VCELL = 3V VCELL =

Terminals Superfast Recovery Times For High Efficiency Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Note: D B F Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A Ta = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1A-D .975V IFM = 1.0A; ES1G-J 1.35V TJ = 25qC* ES1K~M 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR

ns in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL ES1A ES1B ES1C ES1D ES1G ES1J UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 V CHARACTERISTICS Maximum Average Forward Rectified Current @TL =110 C Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) I(AV) 1.0 A IFSM 30 A Maximum forward Voltage at 1.0A DC VF Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ=125 C IR 1.25 0.92 1.30 5.0 200 V uA Maximum Reverse Recovery Time (Note 1) TRR 25 35 ns Typical Reverse Recovery Time TRR 20 30 ns Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note

W Peak, Primary-Side Regulated Adapter Module SLUUAX9B - February 2014 - Revised April 2015 Submit Documentation Feedback Copyright (c) 2014-2015, Texas Instruments Incorporated TP2 MAG J1 C14 1000pF MAG 88VAC - 230VAC 0.5A - 1.5A 2 1 GND TP3 ES1D-13-F 200V D1 NEUTRAL TP4 39213150000 V1 4.70 R1 C2 22F VDD TP11 C1 0.33F 3 4 F1 VDD C3 1F D10 2 1 C4 0.1F R2 100k ACB L1 RLTI-1099 4.5mH ACA DRV 100k R3 D2 1N4007 1000V 4 5 6 8 - 2 ~ ~ + Copyright (c) 2014-2015, Texas Instruments Incorporated NT1 Net-Tie -VPRI 1 CS SD 4 3 2 1 STARPT GND RLTI-1098 C7 27F 1 L2 47.7H 3 C6 120pF C15 10pF R5 1.00k 0 R6 DANGER HIGH VOLTAGE GND TP5 BR1 800V VSENSE UCC28630D DRV VDD HV U1 D3 1N4007 1000V 3 LINE TP1 -VPRI t SLUUAX9B - February 2014 - Revised April 2015 Submit Documentation Feedback C5 100F RT1 470k of net 100 R4 STARPT R8 39k DRV R9 180k C8 0805 R12 1206 R7 22.6k MAG Minimize copper area -VPRI VDC HV TP6 R11 47.0 STARPT

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W

ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s DO-214AC (SMA) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high relia

Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Note: D B F Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A Ta = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1A-D .975V IFM = 1.0A; ES1G-J 1.35V TJ = 25qC* ES1K~M 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR

Component(s) ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 *Note: Only one component per system needed. VDC F1 SDCH R191 See Note 1 R201 SDCL C10 0.1 F Si3215 C142 0.1 F C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV See Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 21 or from "AN45: Design Guide for the Si3210 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3215 BJT/Inductor DC-DC Converter Circuit Rev. 0.92 17 Si3215 Table 13. Si3215 BJT/Inductor DC-DC Converter Component Values Component(s) Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10 0.1 F, 50 V, X7R, 20% Murata, Johanson, Novacap, Venkel C141 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 01 d. ha des s

i r n tin 32 ew u e 01 d. ha des s ig be ns en . R1,R3 *Note: Only one component is necessary on each signal in the system. VDC F1 SDCH R191 Note 1 C142 0.1 F R201 SDCL C10 0.1 F Si321x C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 20 or from "AN45: Design Guide for the Si3210/15/16 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 13. Si321x BJT/Inductor DC-DC Converter Circuit Rev. 1.0 23 Si3216 Table 15. Si321x BJT/Inductor DC-DC Converter Component Values Value Supplier C9 10 F, 100 V, Electrolytic, 20% Panasonic C10* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Panasonic R16 200 , 1/10 W, 5% N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 01 d. ha des s ig be ns en . Co

C17 CAP CER 10F 16V 1206 MURATA GRM31CR71C106KAC7L C18, C20 CAP CER 1F 100V 1206 TDK C3216X7R2A105M C19 CAP CER 2.2F 6.3V 0603 TDK C1608X5R0J225M C22 CAP CER 470pF 100V 0603 TDK C1608C0G2A471J 120V DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D 230V DIODE FAST 400V 1A DO-214AC FAIRCHILD ES1G D2 DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D D3, D5 DIODE ULTRAFAST 100V 0.2A SOT-23 FAIRCHILD MMBD914 D4 DIODE DUAL SCHOTTKY 20V 0.5A SOT-23 NXP SEMI PMEG3005CT,215 120V DIODE TVS 150V 600W UNI SMB LITTLEFUSE SMBJ150A 230V C4 D1 D6 DIODE TVS 220V 600W UNI SMB LITTLEFUSE SMBJ220A D7 DIODE ULTRAFAST 600V 1A SMA FAIRCHILD ES1J D8 DIODE ZENER 24V 1.5W SMA MICRO-SEMI SMAJ5934B-TP D9 DIODE SCHOTTKY 20V 3A SMA FAIRCHILD ES2AA-13-F D10 DIODE RECT 600V 0.5A Minidip COMCHIP HD06 D11, D12 DIODE ZENER 10V 500mW SOD-123 FAIRCHILD MMSZ5240B D13 DIODE ULTRAFAST 70V 0.2A SOT-23 FAIRCHILD BAV99 D14 DIODE ZENER 3.3V 500mW SOD-123 ON-SEMI MMSZ

N5401; Zetex FMMT5401 Central Semi CZT5551, ON Semi 2N5551 ON Semi MMBT2222ALT1; Central Semi CMPT2222A; Zetex FMMT2222 Si3216 VDC F1 SDCH R191 Note 1 C142 0.1 F R201 SDCL C10 0.1 F Si321x C252 10 F R181 R16 200 Q7 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10 F R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 20 or from "AN45: Design Guide for the Si3210/15/16 DC-DC Converter". 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 13. Si321x BJT/Inductor DC-DC Converter Circuit Table 15. Si321x BJT/Inductor DC-DC Converter Component Values Component (s) Value Supplier C9 C10* C14* C25* R16 R17 R18 R19,R20 F1 D1 10 F, 100 V, Electrolytic, 20% 0.1 F, X7R, 20% 0.1 F, X7R, 20% 10 F, Electrolytic, 20% 200 , 1/10 W, 5% 1/10 W, 5% (See AN45 or Table 20 for value selection) 1/4 W, 5% (See AN45 or Table 20 for value selection) 1/10 W, 1% (See AN45 or Table 20 for value selection) Fuse Ultra Fast Recovery 200 V, 1A

stors must be in an 0805 or larger package. 2. Only one component per system needed. Rev. 1.61 17 Si3210/Si3211 VDC F1 SDCH R191 R201 SDCL Si3210 C10 0.1 F DCFF DCDRV R16 200 C142 0.1 F C252 10 F Note 1 R181 Q7 FZT953 Q8 2N2222 R17 L1 D1 ES1D VBAT C9 10 F Note 1 GND Notes: 1. Values and configurations for these components can be derived from "AN45: Design Guide for the Si3210 DC-DC Converter" or Table 21. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3210 BJT/Inductor DC-DC Converter Circuit 18 Rev. 1.61 Si3210/Si3211 Table 13. Si3210 BJT/Inductor DC-DC Converter Component Values Component(s) Value Package Supplier C9 10 F, 100 V, Electrolytic, 20% Radial Panasonic C10 0.1 F, 50 V, X7R, 20% 1210 Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% 1210 Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Radial Panasonic R16 200 , 1/10 W, 5% 805 1/10 W, 5% (See AN45 or Table 21 for value selection) 1/4 W, 5% (S

hode band and type number (No '-LT' Suffix) Maximum Ratings * * 1 Amp Super Fast Recovery Rectifier 50 to 600 Volts DO-214AC (SMA) (LEAD FRAME) Operating Temperature: -65 to +175 Storage Temperature: -65 to +175 H MCC Part Number ES1A-LT ES1B-LT ES1D-LT ES1G-LT ES1J-LT Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum RMS Voltage Maximum DC Blocking Voltage J 35V 70V 140V 280V 420V 50V 100V 200V 400V 600V A Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ES1A-LT-ES1D-LT ES1G-LT ES1J-LT Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) 1.0A TA= 55 IFSM 30A 8.3ms, half sine E C D B F G VF .95V 1.25V 1.70V IFM = 1.0A; IR 5A 80A TA = 25 TA = 100 Trr 35ns CJ 15pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V DIMENSIONS DIM A B C D E F G H J INCH

ES1D Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 15 ns DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.090 (2.29) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) 0.078 (1.98) Features 0.060 (1.52) 0.030 (0.76) * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * For surface mount applications * Glass passivated chip junctions * Low profile package * Easy pick and place * Ultrafast recovery times for high efficiency * Low forward voltage, low power loss * Built-in strain relief, ideal for automated placement * High temperature soldering guaranteed: 250C/10 seconds on terminals 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93) Mechanical Data Case: JEDE

ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W

selection) R32* 10 k, 1/10 W, 5% *Note: Only one component per system needed. 16 Preliminary Rev. 1.11 Si3210/Si3211/Si3212 VDC F1 SDCH R19 1 Note 1 C142 0.1uF R20 1 SDCL C10 22nF Si3210 C252 10uF R181 R16 200 Q8 FZT953 DCFF Q8 2N2222 D1 ES1D VBAT C9 10uF R17 L1 DCDRV Note 1 GND Notes: 1. Values and configurations for these components can be derived from Table 21 or from App Note 45. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3210 BJT/Inductor DC-DC Converter Circuit Table 13. Si3210 BJT/Inductor DC-DC Converter Component Values Component (s) Value Supplier C9 C10 C14* C25* R16 R17 R18 R19,R20 F1 D1 10 F, 100 V, Electrolytic, 20% 22 nF, 50 V, X7R, 20% 0.1 F, X7R, 20% 10 F, Electrolytic, 20% 200 , 1/10 W, 5% 1/10 W, 5% (See AN45 or Table 19 for value selection) 1/4 W, 5% (See AN45 or Table 19 for value selection) 1/10 W, 1% (See AN45 or Table 19 for value selection) Fuse Ultra Fast Recovery 200 V, 1A Rectifier Panasonic Murata, Johanson, No

10/Si3211 VDC F1 SDCH R191 R201 SDCL R16 200 Q7 FZT953 N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 01 d. ha des s ig be ns en . Si3210 C10 0.1 F C142 0.1 F C252 10 F Note 1 R181 DCFF DCDRV Q8 2N2222 R17 L1 D1 ES1D VBAT C9 10 F Note 1 GND Notes: 1. Values and configurations for these components can be derived from "AN45: Design Guide for the Si3210 DC-DC Converter" or Table 21. 2. Voltage rating for C14 and C25 must be greater than VDC. Figure 10. Si3210 BJT/Inductor DC-DC Converter Circuit 18 Rev. 1.61 Si3210/Si3211 Table 13. Si3210 BJT/Inductor DC-DC Converter Component Values Value Package Supplier C9 10 F, 100 V, Electrolytic, 20% Radial Panasonic C10 0.1 F, 50 V, X7R, 20% 1210 Murata, Johanson, Novacap, Venkel C14* 0.1 F, X7R, 20% 1210 Murata, Johanson, Novacap, Venkel C25* 10 F, Electrolytic, 20% Radial Panasonic R16 200 , 1/10 W, 5% 805 N ot Pl re ea c o se m no me te nd di th ed sc e fo S on i r n tin 32 ew u e 0

ters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL ES1A ES1B ES1D ES1G ES1J UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 V Maximum RMS Voltage VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TA=55 I(AV) 1.0 A IFSM 30 A Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Peak Forward Voltage at 1.0A DC 0.95 VF Maximum DC Reverse Current @TJ=25 at Rated DC Blocking Voltage @TJ=100 Maximum Reverse Recovery Time(Note 1) Tyical Junction Capacitance (Note2) Tyical Thermal Resistance (Note3) Operating Temperature Range Storage Temperature Range 1.25 1.70 5.0 IR A 100 35 TRR 30 CJ V nS 25 pF RJA 40 /W TJ -55 to +150

DC IAV Description Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IFSM Peak Forward Surge Current TJ,TSTG Operating Junction and Storage Temperature Range ES1A ES1B ES1D ES1F ES1G ES1J ES1K Unit 50 100 200 300 400 600 800 V 35 70 140 210 280 420 560 V 50 100 200 300 400 600 800 V 1.0 30 -55 to 150 25 Conditions A TL=110C A 8.3ms single half sinewave superimposed on rated load (JEDEC Method) C Note: Single phase half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/AH 2008-04-11 Page 1 of 4 1.0A Surface Mount Super Fast Rectifier ES1A - ES1K Electrical Characteristics (T Ambient=25C unless noted) Symbol Description Trr Maximum Instantaneous Forward Voltage Maximum