4.5V equally by 30%. 7-20 EPSON Rev. 4.6 S1D15600/601/602 Series 7. FUNCTIONAL DESCRIPTION Microprocessor Interface Parallel/serial interface series through the serial data input (SI), but not from the Parallel data can be transferred in either direction bES1D15600/601/602 series to the microprocessor. The tween the controlling microprocessor and the S1D15600/ parallel or serial interface is selected by P/S as shown in 601/602 series through the 8-bit I/O buffer (D0 to D7). table 1. Serial data can be sent from the microprocessor to the S1D15600/601/602 Table 1. Parallel/serial interface selection P/S Input type CS1 CS2 A0 RD WR C86 SI SCL D0 to D7 HIGH Parallel CS1 CS2 A0 RD WR C86 -- -- D0 to D7 LOW Serial CS1 CS2 A0 -- -- -- SI SCL (Hz) Note "--" indicates fixed to either HIGH or to LOW For the parallel interface, the type of microprocessor is selected by C86 as shown in table 2. Common 6800 series Table 2. Microprocessor selection for parallel interface MPU bus type C86 HIGH LOW CS1 CS2 A0 RD

h 76.2 x 114.3mm copper pad area. 3.Reverse Recovery Tset Conditions: I F =0.5A,I R =1.0A,Irr=0.25A. June 27,2012-REV.00 PAGE . 1 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 CJ, Junction Capacitance (pF) IF, Forward Current (A) ES1AWG SERIES 100 ES1AWG~ES1DWG 10 ES1JWG ES1GWG 1 0.1 Fig.1 Forward Current Derating Curve 100 Fig.2 Typical Junction Capacitance 10 10 IF, Forward Current (A) IR, Reverse Current (uA) 10 VR, Reverse Bias Voltage (V) TC, Case Temperature (C) TJ = 150C 1 0.1 TJ = 125C TJ = 25C TJ = 75C 0.01 20 40 60 80 ES1AWG~ES1DWG TJ = 150C 1 TJ = 125C 0.1 TJ = 75C TJ = 25C 0.01 100 0.2 Percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Reverse Characteristics 0.4 0.6 0.8 1 VF, Forward Voltage (V) Fig.4 Typical Forward Characteristics 10 10 ES1GWG IF, Forward Current (A) IF, Forward Current (A) 1 TJ = 150C 1 TJ = 125C TJ = 75C 0.1 TJ = 25C 0.01 ES1JWG TJ = 150C 1 TJ = 125C TJ = 75C 0.1 TJ = 25C 0.01 0.2 0.4 0.6 0.8 1 1.2 VF, Forward Voltage (V) Fig.5 Typical Forward

4.5V equally by 30%. 7-20 EPSON Rev. 4.6 S1D15600/601/602 Series 7. FUNCTIONAL DESCRIPTION Microprocessor Interface Parallel/serial interface series through the serial data input (SI), but not from the Parallel data can be transferred in either direction bES1D15600/601/602 series to the microprocessor. The tween the controlling microprocessor and the S1D15600/ parallel or serial interface is selected by P/S as shown in 601/602 series through the 8-bit I/O buffer (D0 to D7). table 1. Serial data can be sent from the microprocessor to the S1D15600/601/602 Table 1. Parallel/serial interface selection P/S Input type CS1 CS2 A0 RD WR C86 SI SCL D0 to D7 HIGH Parallel CS1 CS2 A0 RD WR C86 -- -- D0 to D7 LOW Serial CS1 CS2 A0 -- -- -- SI SCL (Hz) Note "--" indicates fixed to either HIGH or to LOW For the parallel interface, the type of microprocessor is selected by C86 as shown in table 2. Common 6800 series Table 2. Microprocessor selection for parallel interface MPU bus type C86 HIGH LOW CS1 CS2 A0 RD

ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability DO-214AC (SMA) * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 15 ns VF 0.92 V TJ max. 150 C * Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 2

CURVES (ES1AL THRU ES1JL) FIG. 2 TYPICAL FORWARD CHARACTERISRICS FIG.1 FORWARD CURRENT DERATING CURVE 100 ES1HL-ES1JL 1 0.8 0.6 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 INSTANTANEOUS FORWARD A CURRENT (A) AVERAGE FORWARD A CURRENT (A) 1.2 ES1FL-ES1GL 10 ES1AL-ES1DL 1 0.1 0 80 90 100 110 120 130 140 150 LEAD TEMPERATURE (oC) TA=25 Pulse Width=300us 1% Duty Cycle 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE A CURRENT (A) 30 8.3mS Single Half Sine Wave JEDEC Method 25 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 5 TYPICAL REVERSE CHARACTERISTICS 1000 TA=125 INSTANTANEOUS REVERSE A CURRENT (uA) 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 14 CAPACITANCE (pF) 12 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 10 TA=75 1 TA=25 0.1 TA=25 f=1.0MHz Vsig=50mVp-p 2 0.01 0 1 10 REVERSE VOLTAGE (V) 100 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:F11 140

Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 110C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Drop Symbol ES1A ES1B ES1C ES1D ES1G Unit VRRM VRWM VR 50 100 150 200 400 V VR(RMS) 35 70 105 140 280 V IO 1.0 A IFSM 30 A 3/4 1.25 @ IF = 0.6A @ IF = 1.0A VFM @ TA = 25C @ TA = 100C IRM 5.0 200 mA Reverse Recovery Time (Note 3) trr 20 ns Typical Junction Capacitance (Note 2) Cj 10 pF RqJT 40 K/W Tj, TSTG -65 to +150 C Peak Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance, Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: 0.90 0.98 V 1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. DS14001 Rev. G-2 1 of 2 ES1A - ES1G IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERA

148WS D14 B130L D22* 1N5819HW Q5 FMMT718 R6 10K Ilim=24A +12PRI 4 2 R11 10K D6 1N4148WS D2 1N4148WS M2si4842dy 1 2 3 4 M1 si4842dy 8 1 7 2 6 3 5 4 C32 2.2nF C26 0.47uF +Vin 5 U4 SC1302A 10 D20* 1N5819HW R50 8 10 M6 si4490dy P8208T 7 T2 2 5 5 6 7 8 4 3 2 1 ES1D D1 C2 0.1uF,100V 5 6 7 8 4 3 2 1 M7 Not populated R1 39K 5 6 7 8 4 3 2 1 M3 si4842dy 8 Vin+ 8 8 7 6 5 1 2 3 4 1 6 3 T1 1 6 3 14 AVCC AGND 7 PA0168A 8 VCC GND 1 LUVLO RT 2 16 6 8 7 6 5 1 2 3 4 12 PVCC 13 PVCC PGND 8 PGND 9 R52 1K C50 22nF C51 10uF L1 1.3uH R13 10.0K 5 C14 0.1uF +12V C7 100uF R24 2.0K R19 6.8K U3 SC4431 C6 100uF 1 +Vin C8 680uF V re f 2004 Semtech Corp. 2 CON1 4 R15 18.2K R14 37.4K C9 680uF * : Optional R2 10.0 7 6 5 4 3 1 Vout- EN Ishare Sense Sense Vout+ CON2 3.3V/20A SC4910A/B POWER MANAGEMENT Evaluation Board Schematics www.semtech.com SC4910A/B POWER MANAGEMENT Evaluation Board Bill of Materials Item Quantity Reference 3 2 C1,C32 4 1 C2 5 5 6 Part Manufacturer # 2.2nF Foot Print SM/C_0805 0.1uF,100V TDK, C3216X7R2A104M S

TDK C1608X7R1C224K C17 CAP CER 10F 16V 1206 MURATA GRM31CR71C106KAC7L C18, C20 CAP CER 1F 100V 1206 TDK C3216X7R2A105M C19 CAP CER 2.2F 6.3V 0603 TDK C1608X5R0J225M C22 CAP CER 470pF 100V 0603 TDK C1608C0G2A471J 120V DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D 230V D1 DIODE FAST 400V 1A DO-214AC FAIRCHILD ES1G D2 DIODE ULTRAFAST 200V 1A SMA FAIRCHILD ES1D D3, D5 DIODE ULTRAFAST 100V 0.2A SOT-23 FAIRCHILD MMBD914 D4 DIODE DUAL SCHOTTKY 20V 0.5A SOT-23 NXP SEMI PMEG3005CT,215 120V DIODE TVS 150V 600W UNI SMB LITTLEFUSE SMBJ150A 230V DIODE TVS 220V 600W UNI SMB LITTLEFUSE SMBJ220A D7 DIODE ULTRAFAST 600V 1A SMA FAIRCHILD ES1J D8 DIODE ZENER 24V 1.5W SMA MICRO-SEMI SMAJ5934B-TP D9 DIODE SCHOTTKY 20V 3A SMA FAIRCHILD ES2AA-13-F D10 DIODE RECT 600V 0.5A Minidip COMCHIP HD06 D11, D12 DIODE ZENER 10V 500mW SOD-123 FAIRCHILD MMSZ5240B D13 DIODE ULTRAFAST 70V 0.2A SOT-23 FAIRCHILD BAV99 D14 DIODE ZENER 3.3V 500mW SOD-123 ON-SEMI MMSZ3V3T1G D15 DIODE ZENER 1.8V 500MW SOD-123 ON-SEMI MMSZ4678T1G

king : Cathode band and type number (No '-LT' Suffix) Maximum Ratings * * 1 Amp Super Fast Recovery Rectifier 50 to 600 Volts DO-214AC (SMA) (LEAD FRAME) Operating Temperature: -65 to +175 Storage Temperature: -65 to +175 H MCC Part Number ES1A-LT ES1B-LT ES1D-LT ES1G-LT ES1J-LT Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum RMS Voltage Maximum DC Blocking Voltage J 35V 70V 140V 280V 420V 50V 100V 200V 400V 600V A Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ES1A-LT-ES1D-LT ES1G-LT ES1J-LT Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) 1.0A TA= 55 IFSM 30A 8.3ms, half sine E C D B F G VF .95V 1.25V 1.70V IFM = 1.0A; IR 5A 80A TA = 25 TA = 100 Trr 35ns CJ 15pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V DIMENSIONS DIM A B C D E F G H J INCHES MIN .079 .050 .002 --.030 .065

The VCS voltage is approximately 143 times the voltage at the VREG pin. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com HV816 Fig. 1 : Typical Application Circuit VIN CIN 47F LX = 22H (Cooper DR1030-220-R) CG 0.1F CS 12nF 200V ES1D Vishay Si7820DN RREG = 3.3M VREG VDD CDD 47F REL = 1.0M CFEL 100nF CSW 100nF RSW = 1.0M RSLEW = 100k VOUT VDRIVE LX GATE VA REL-Osc HV816 ON = 1.5V to VDD EN RSLEW-OUT GND OFF = 0V to 0.2V SEL HVGND LX D VIN VDD CIN CDD EN RSW Device Enable RSW-Osc VDD VOUT REL-Osc SEL RSLEW-OUT RSLEW Supertex inc. LX VDRIVE GATE CS 7V Linear Regulator VCS PWM Switch Oscillator 0 to 88% VA + - 60pF RREG REL CS CG VREG External EL Frequency Control CEL 80nF VB RSW-Osc Block Diagram Input Logic Control: ON = 1.5V to VDD OFF = 0 to 0.2V CS VDD VSENSE 1.26V VREF EL Lamp Output Drivers VCS 2x EL Frequency VB EL Frequency GND HVGND HV816 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 HV816 Ordering Information Part Number Package Pa

Amp Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Note: D B F Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A Ta = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1A-D .975V IFM = 1.0A; ES1G-J 1.35V TJ = 25qC* ES1K~M 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50n

ES1DSR Features * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * 1 Amp Soft Recovery Rectifier 200 Volts Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1DSR ES1D 200V 140V DO-214AC (HSMA) (High Profile) H Cathode Band 200V J Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 1.0A 30A A TJ = 75C E D F 8.3ms, half sine C B G DIMENSIONS VF .97V IFM = 1.0A; TJ = 25C* IR 5A 30A TJ = 25C TJ = 125C

50 50 50 75 75 75 75 75 75 35 35 35 35 35 50 50 Package MINIMELF SOD-123 MELF MCC Average Forward Forward Peak Current @ HalfSurge Current Wave @ 8.3mS MCC Resistive Load Superimposed Part Number 60Hz VRWM IO @ TL IFSM V A A C ES1A 50 75 30 ES1B 100 75 30 ES1D 200 75 30 ES1G 400 1.0 75 30 ES1J 600 75 30 ES1K 800 75 30 ES1M 1000 75 30 ES2A 50 75 50 ES2B 100 75 50 ES2D 200 75 50 ES2G 400 2.0 75 50 ES2J 600 75 50 ES2K 800 75 50 ES2M 1000 75 50 ER6A 50 55 125 ER6B 100 55 125 6.0 ER6D 200 55 125 ER6G 400 55 125 ER8A 50 55 150 ER8B 100 55 150 ER8D 200 8.0 55 150 ER8G 400 55 150 ER8J 600 55 150 ER10A 50 55 200 ER10B 100 55 200 10 ER10D 200 55 200 ER10G 400 55 200 ER3A 50 75 100 ER3B 100 75 100 ER3D 200 75 100 3.0 ER3G 400 75 100 ER3J 600 75 100 ER3K 800 75 100 ER1A 50 75 30 ER1B 100 75 30 ER1D 200 75 30 ER1G 400 75 30 ER1J 600 75 30 ER1K 800 75 30 1.0 ER1M 1000 75 30 ER1Q 1200 55 30 ER1V 1400 55 30 ER1Y 1600 55 30 ER1Z 1800 55 30 ER1ZZ 2000 55 30 ER2A 50 75 50 ER2B 100 75 50 ER2D 200 75 50 ER2G 400 2.0

als Superfast Recovery Times For High Efficiency UL Flammability Maximum Ratings * * * Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15C/W Junction To Lead MCC Part Number Device Marking ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (HSMA) (High Profile) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Average Forward IF(AV) 1.0A TJ = 75C Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage IFM = 1.0A; VF .95V ES1A-D 1.35V ES1G-K TJ = 25C* 1.60V ES1M Maximum DC IR Reverse Current At 5A TJ = 25C Rated DC Blocking 100A TJ = 100C Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1A-D 60ns Irr=0.25A ES1G-K 100ns ES1M Typical Junction CJ 45pF Measured at Cap

ogen free available upon request by adding suffix "-HF" Maximum Ratings * * 1 Amp Super Fast Recovery Rectifier 50 to 600 Volts DO-214AC (SMA) (LEAD FRAME) Operating Temperature: -65 to +175 Storage Temperature: -65 to +175 H MCC Part Number ES1A-L ES1B-L ES1D-L ES1G-L ES1J-L Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum RMS Voltage Maximum DC Blocking Voltage J 35V 70V 140V 280V 420V 50V 100V 200V 400V 600V A Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ES1A-L-ES1D-L ES1G-L ES1J-L Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) 1.0A TL= 125 IFSM 30A 8.3ms, half sine E C D B F G VF .95V 1.25V 1.70V IFM = 1.0A; IR 5A 80A TA = 25 TA = 100 Trr 35ns CJ 15pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V DIMENSIONS DIM A B C D E F G H J INCHES MIN .079 .050 .002 --.030 .065 .189 .