D13007P Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007P STD13007 TO-220AB BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 87 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.43 Junction-ambient Rth(J-a) - 88 KSD-T0P020-000 Unit /W 1 STD13007P Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current gain
D13007F NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007F STD13007 TO-220F-3L BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 3.12 Junction-ambient Rth(J-a) - 62.5 KSD-T0O021-003 Unit /W 1 STD13007F Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current gain Collector-
D13007P NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007P STD13007 TO-220AB BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 87 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.43 Junction-ambient Rth(J-a) - 88 KSD-T0P020-001 Unit /W 1 STD13007P Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current gain Collector-Emit
D13007FC rjr Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control PIN Connection C B Ordering Information Type NO. Marking Package Code STD13007FC STD13007 TO-220F-3SL BCE E Absolute maximum ratings Characteristic (Tc=25) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 3.12 Junction-ambient Rth(J-a) - 62.5 KSD-T0T006-000 Unit /W 1 STD13007FC Electrical Characteristics (Tc=25) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current IEBO D
D13007 Semiconductor NPN Silicon Power Transistor Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking STD13007 Package Code STD13007 TO-220AB Outline Dimensions unit : mm 9.80~10.20 3.50~3.70 4.35~4.65 8.20~8.60 1.37 Max. 2.20~2.60 0.95 Max. 2.54 Typ. 5.08 Typ. 9.85~10.15 0.95~1.05 1.49~1.59 1.62 Max. 2.35~2.45 12.68~13.48 9.05~9.35 3.00 6.30~6.70 1.20~1.40 9.85~10.15 KSD-T0P013-001 0.40~0.60 PIN Connections 1. Base 2. Collector 3. Emitter 1 STD13007 Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 80 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics (Ta=25C) Cha
D13007FC NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control PIN Connection C B Ordering Information Type NO. Marking Package Code STD13007FC STD13007 TO-220F-3SL BCE E Absolute maximum ratings Characteristic (Tc=25) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 3.12 Junction-ambient Rth(J-a) - 62.5 KSD-T0T006-001 Unit /W 1 STD13007FC Electrical Characteristics (Tc=25) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current IEBO DC Current gain hFE
D13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007 STD13007 TO-220AB BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 80 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.56 Junction-ambient Rth(J-a) - 83.3 KSD-T0P013-002 Unit /W 1 STD13007 Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current gain Collector-Emitt
D13007 Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007 STD13007 TO-220AB BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 80 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.56 Junction-ambient Rth(J-a) - 83.3 KSD-T0P013-001 Unit /W 1 STD13007 Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current gain C
D13007F Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007F STD13007 TO-220F-3L BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 3.12 Junction-ambient Rth(J-a) - 62.5 KSD-T0O021-002 Unit /W 1 STD13007F Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current g
D13007F Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13007F STD13007 TO-220F-3L BCE E Absolute maximum ratings Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 3.12 Junction-ambient Rth(J-a) - 62.5 KSD-T0O021-002 Unit /W 1 STD13007F Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current DC Current g
D13007F Semiconductor NPN Silicon Power Transistor Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking STD13007F STD13007 Outline Dimensions Package Code TO-220F unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-H035-000 1 STD13007F Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics (Ta=25C) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current IEBO DC Current gain hFE* Collector-Emitter saturation voltage Base-Emitter saturation voltage VCE(sat)* VBE(sat)* Tran
D13007FC Semiconductor NPN Silicon Power Transistor Features * High speed switching * High Collector Voltage : VCBO = 700V * Suitable for Switching Regulator and Motor Control Ordering Information Type NO. STD13007FC Marking STD13007 Outline Dimensions Package Code TO-220F-3SL unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-H028-000 1 STD13007FC Absolute maximum ratings (Tc=25) Characteristic Symbol Rating Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 8 A Collector current (Pulse) ICM 16 A Base current (DC) IB 4 A Collector Power dissipation (Tc=25) PC 40 W Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics (Tc=25) Characteristic Symbol Collector-Emitter sustaining voltage BVCEO(sus) Emitter cut-off current IEBO DC Current gain hFE* Collector-Emitter saturation voltage Base-Emitter saturation voltage VCE(sat)* VBE(sat)*
D13007 1 3DD13007 NPN 4.8max 10.7max 1.4max 3.84 TO-220AB VCE0 VCB0 VEB0 IC 400 700 9 8 2 80 150 -55 150 Ptot Tj Tstg V V V A 6.9max 12.5min 2.1 Tamb= 25 - - - Ta=25 Tc=25 16.5max 2 2.54 W 2.54 0.56min B C E 2.2 Tamb= 25 - - hFE1 hFE2 - - ICB0 IEB0 VCB=700V, IE=0 VEB=9V, IC=0 hFEa VCE=5V, IC=2A hFE1/ hFE2 VCE sata VBE sata tf ts fT a: tp 300 s, hFE1 VCE=5V,IC=5mA hFE2 VCE=5V,IC=2A IC=5A, IB=1A IC=5A, IB=1A VCC=120V, IC=2A 2IB1=-IB2=0.4A VCE=10V, IC=500mA f=1MHz 1 1 8 0.75 mA mA 40 0.9 1.5 1.5 0.8 3.6 4 V V s s MHz 2% 14 0510 5800360 1 5807228-2268 2 2299 0510 3DD13007 3 () Ptot - T Ptot (W) IC (A) Tcase=25 80 1 Ptot-Tcase 60 40 0.1 20 0.01 1 hFE Ptot-Tamb 0 10 100 VCE (V) 0 100 50 T( ) VCEsat - IC hFE - IC VCEsat (V) Tamb=25 VCE=5V Tamb=25 hFE=5 1 10 0.1 1 0.01 0.1 1 IC(A) 0.01 0.1 VBEsat - IC BEsat V (V) Tamb=25 hFE=5 1.2 0.8 0.4 01 1 IC(A) 2 2 1 IC(A)
D13007 NPN C B E Ta=25 - VCBO 700 V - VCEO 400 V - VEBO 9 V IC 8 A IB 4 A Tc=25 Ta=25 PD 80 W 2 Tj 150 Tstg -55-150 B C E Ta=25 - HFE(1) Vce=5 V,Ic=2A BVcbo Ic=1 mA ,Ie=0 700 - BVceo Ic=10 mA ,Ib=0 400 V - BVebo Ie=1 mA ,Ic=0 Icbo Vcb=700 V ,Ie=0 9 V - - - - Iebo 60 V HFE(1) mA 1 mA 2 V 1.6 V 4 Vce=10V, Ic=500mA, f=1.0MHz Vce=10V, Ic=2A, IB1=IB2=400mA MHz 1.6 uS 3.5 uS 0.7 uS HFE(1) 1 Veb=9 V ,Ic=0 Vce(sat) Ic=5A ,Ib=1A Vbe(sat) Ic=5A ,Ib=1A fT ton ts tf 8 D13007 A B C D E 8-25 20-35 30-45 40-55 50-60 QR027
D13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC =0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Collector cut-off current ICEO VCE= 400V, IB=0 100 A Emitter cut-off current IEBO VEB= 9V, IC=0 100 A hFE1 VCE= 5V, IC= 2 A 8 40 hFE2 VCE=5V, IC=5A 5 30 DC current gain Collector-emitter saturation vol