BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD243 Collector-emitter voltage (RBE = 100 ) Collector-emitter voltage (IC = 30 mA) BD243A BD243B VALUE VCER 70 90 BD243C 115 BD243 45 BD243A BD243B UNIT 55 VCEO BD243C 60 80 V V 100 V EBO 5 V IC 6 A ICM 10 A IB 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC 2 62.5 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 250 C Emitter-base voltage C
ching Applications * Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 65 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. Typ. Max. 45 60 80 100 Uni
BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 @ Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Cc C) Customer-Specified Selections Available Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD243 55 . BD243A 70 Collector-emitter voltage (Rag = 100 Q) BD243B VceR 90 Vv BD243C 115 BD243 45 . BD243A 60 Collector-emitter voltage (l = 30 mA) BD243B VcEo 80 Vv BD243C 100 Emitter-base voltage VeBo 5 Vv Continuous collector current lo 6 A Peak collector current (see Note 1) lom 10 A Continuous base current lp 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 65 Ww Continuous device dissipation at (or below) 25C free air temperatu
BD243A/B/C BD244A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS BD243B, BF243C,BD244B AND DB244C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD243A, BD243B and BD248C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244A, BD244B and BD244C respectively. INTERNAL SCHEMATIC DIAGRAM Ca (2) Co (2) (1) (1) B B EO(3) Eo (3) SCOBSEO SC08810 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN | BD243A BD243B BD243C PNP | BD244A BD244B BD244C Vcso |Collector-Base Voltage (le = 0) 60 80 100 Vv Vceo |Collector-Emitter Voltage (lp = 0) 60 80 100 Vv Veso |Emitter-Base Voltage (Ic = 0) Vv Ic Collector Current A lom Collector Peak Current 10 A lB Base Current A Ptot |Total Dissipation at Tc < 25 C 65 w Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are neg
BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD244 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 ) BD243B Collector-emitter voltage (IC = 30 mA) VCER 115 45 V CEO Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 60 80 V V 100 BD243C Continuous collector current 90 BD243C BD243B Emitter-base voltage
BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD244 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 ) Collector-emitter voltage (IC = 30 mA) BD243B VCER Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 90 BD243C 115 45 BD243B V CEO 60 80 V V 100 BD243C Emitter-base voltage
BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 "-S" Suffix Added to Part Number Indicates RoHS Compliance* Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD243 Collector-emitter voltage (RBE = 100 ) BD243A BD243B VCER Emitter-base voltage Continuous collector current BD243B BD243C 70 90 V 115 BD243 Collector-emitter voltage (IC = 30 mA) UNIT 55 BD243C BD243A VALUE 45 V CEO VEBO IC 60 80 100 V 5 V 6 A Peak collector current (see Note 1) ICM 10 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W 1/2LIC2 62.5 mJ Continuous base current Continuous device dissipation at (or below) 25C free air temperature (see Not
BD243A BD243A 3-286 8D312 2N3791 3-56 BD243B BD243B 3-286 BD315 2N5629 3-105 BD243C BD243C 3-286 BD316 BD318 3-290 BD244 BD244 3-286 BD317 2N5629 3-105 BD2444 BD244A 3-286 80318 BD318 3-290 BD244B BD244B 3-286 BD329 MJE200 3-866 BO244C BD244C 3-286 8D330 MJE210 3-866 BO249 BD249 - BD331 BD897 3-320 BD2d9A BD249B _ 8D332 BD898 3-322 BD249B BD249B - BD333 BD899 3-320 BO249 BD249C _ BD333 6D902 3-322 BD250 BD250 = 8D334 BD900 3-322 BD250A BD250B - BD335 BD301 3-320 BD250B BD250B - BD337 BOX33D 3-334 BD250C BD250C BD338 BDX34D 3-334 BD253 2N6543 3-215 BD342 2N3085 3-6 BD253A 2N6543 3-215 8D343 MJE2965 3-904 BD253B 2N6543 3-215 BD344 BD138 3-260 BD253C BU326A 3-363 BD345 BD137 3-258 BD262 BD678 3-300 BD346 BD798 3-314 BO262A BD680 3-300 BD347 8D797 3-312 BD262B BD682 3-300 8D348 BD140 3-260 BD263 BD677 3-298 BD349 BD139 3-258 BD263A BD679 3-298 BD361 MJE200 3-866 BD263B BF6g1 = BD361A MJE200 3-866 BD266 BD898 3-322 80362 MJE210 3-866 BD266A BD300 3-322 BD362A MJE210 3-866 BD266B BD902 3-3
BD243A/B/C BD244A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS BD243B, BF243C, BD244B AND DB244C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD243A, BD243B and BD243C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244A, BD244B and BD244C respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN BD243A BD243B BD243C PNP BD244A BD244B BD244C V CBO Collector-Base Voltage (I E = 0) 60 80 100 V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V EBO Emitter-Base Voltage (IC = 0) 5 V Collector Current 6 A Collector Peak Current 10 A Base Current 2 A IC I CM IB P tot T s tg Tj o T otal Dissipation at Tc 25 C Storage T emperature Max. Operating Junction T emperature 65 V V W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. October 1995 1/4
8 2.5 5 80 400 MJE13070 8 min 3 15 0.5 3 80 450 MJE16002 5 min 5 3 0.3 3 80 MJE16004 7 min 5 2.7 0.35 3 80 700 MJE8502 7.5 min 1 4 2 2.5 80 800 MJE8503 7.5 min 1 4 2 2.5 80 6 40 TiP41 TIP42 15/75 3 0.4 typ | 0.15 typ 3 3 65 45 BO243 BD244 15 min 3 3 65 60 BD243A BD244A 15 min 3 3 65 TIP41A TIP42A 15/75 3 0.4 typ | 0.15 typ 3 3 65 80 BD243B BD244B 15 min 3 3 65 TIP41B TIP42B 15/75 3 0.4 typ | 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 3 65 TIP41C TIP42c 15/75 3 0.4 typ | 0.15 typ 3 3 65 7 30 2N6288 2N6111 30/150 3 0.4 typ | 0.15 typ 3 4 40 # (hfel @ 1 MHz, ## Darlington (continued)MOTOROLA m= SEMICONDUCTOR xy TECHNICAL DATA BD243 BD243A BD243B BD243C BD244 BD244A BD244B BD244C COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS applications. @ Cottector-Emitter Saturation Voltage - VCE (sat) = 1.6 Vde (Max) @ lo = 6.0 Adc Collector Emitter Sustaining Voltage VcEO(sus) ~~ 45 Vde (Min) 80243, BD244 = 60 Vdc (Min) - BD243A, BD244A = 80 Vde (Min) BD243B, BD244B == 100 Vdc (Min) ~
BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK JUNE 1973 - REVISED MARGH 1997 Le : a Designed for Complementary Use with the 8D244 Series 0-220 PACKAGE @ 65 W at 25C Case Temperature (roP VIEW) @ 6A Continuous Collector Current @ 10A Peak Collector Current c C) @ Customer-Specified Selections Available Pin 2 is in electrical contact with the mounting base. MOTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD243A BD2438 BD243C Collector-emitter voltage (Rye = 100 Q} BD243A BO243B Bb243C Collector-emitter voltage (Ig = 30 mA) mn NOTES: 1.. This value applies fort, < 0.9 ms, duty cycle < 10%. 2. Derate-tinearty 16 150C casa temperatura at the rate of 0.52 WAC. 3.. Derate linearly to 150C free air temperature at the rate of 16 MWC. 4, This rating is based on the capability of the transistor to operate safely in a circult of: L = 20 MH, Igjon) = 04 A, Age = 100 2, Veeior = 0, Ag = 0.1 2
BD243A BD243A 3-286 8D312 2N3791 3-56 BD243B BD243B 3-286 BD315 2N5629 3-105 BD243C BD243C 3-286 BD316 BD318 3-290 BD244 BD244 3-286 BD317 2N5629 3-105 BD2444 BD244A 3-286 80318 BD318 3-290 BD244B BD244B 3-286 BD329 MJE200 3-866 BO244C BD244C 3-286 8D330 MJE210 3-866 BO249 BD249 - BD331 BD897 3-320 BD2d9A BD249B _ 8D332 BD898 3-322 BD249B BD249B - BD333 BD899 3-320 BO249 BD249C _ BD333 6D902 3-322 BD250 BD250 = 8D334 BD900 3-322 BD250A BD250B - BD335 BD301 3-320 BD250B BD250B - BD337 BOX33D 3-334 BD250C BD250C BD338 BDX34D 3-334 BD253 2N6543 3-215 BD342 2N3085 3-6 BD253A 2N6543 3-215 8D343 MJE2965 3-904 BD253B 2N6543 3-215 BD344 BD138 3-260 BD253C BU326A 3-363 BD345 BD137 3-258 BD262 BD678 3-300 BD346 BD798 3-314 BO262A BD680 3-300 BD347 8D797 3-312 BD262B BD682 3-300 8D348 BD140 3-260 BD263 BD677 3-298 BD349 BD139 3-258 BD263A BD679 3-298 BD361 MJE200 3-866 BD263B BF6g1 = BD361A MJE200 3-866 BD266 BD898 3-322 80362 MJE210 3-866 BD266A BD300 3-322 BD362A MJE210 3-866 BD266B BD902 3-3
BD243A/B/C 6A 65W Technical Data ...designed for use in general-purpose switching and amplifier applications. F Collector-Emitter Saturation VoltageVCE=1.5Vdc(Max)@IC=6Adc F Collector-Emitter Sustaining VoltageVCEO(sus)=60/80/100Vdc(Min) BD243A/B/C F TO-220 Package MAXIMUM RATINGS Rating Symbol BD243A BD243B BD243C Unit Collector- Emitter Voltage V CEO 60 80 100 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 60 80 5 6 10 2 100 Vdc Vdc Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic IB PD Adc 65 0.52 -65 to +150 Tj,Tstg Symbol Max. 1.92 Thermal resistance junction to case R thjc Watts W/C C Unit C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage(1) VCEO(sus) [ Ic =30 mAdc, IB = 0 ] BD243A
BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD243 45 BD243A 60 BD243B 80 BD243C 100 TYP MAX V VCE = 55 V VBE = 0 BD243 0.4 Collector-emitter VCE = 70 V VBE = 0 BD243A 0.4 cut-off current VCE = 90 V VBE = 0 BD243B 0.4 VCE = 115 V VBE = 0 BD243C 0.4 Collector cut-off VCE = 30 V IB = 0 BD243/243A 0.7 current VCE = 60 V IB = 0 BD243B/243C 0.7 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.3 A transfer ratio VCE = 4V IC = 3A IB = 1A IC = 6A VCE = 4V IC = 6A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio UNIT mA mA 1 mA (see Notes 5 and 6) 1.5 V (see Notes 5 and 6) 2 V (see Notes 5 and 6) 30 15 VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A
BD243A, BD243B, BD243C 4271 FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD244A-C 65 W at 25 C Case Temperature e 6A Rated Collector Current e = Min fy of 3 MHz at 10 V, 500 mA mechanical data | L 3 3 8 T ao I jm 6.0 Qo g 0.05 thick ! 168 08 10+ 05 {ap 12, 3,80 - 0,05--! moo 3.19 - 0,05 7a 0.4 max O ~ tt s 5 ==4 t 18.90 +0,0 lw -- -01 All dimensions are in mm TO-66P absolute maximum ratings at 25 C case temperature (unless otherwise noted) BD243 BD243A 8D243B B8D243C Collector-Emitter Voltage [Rag = 100 $2) 55V 70V 90 V 115V Collector-Emitter Voltage (See Note 1) 45V 60V 80 V 100 V Emitter-Base Voltage < 5V > Continuous Collector Current < 6A > Peak Collector Current (See Note 2) . < 10A > Continuous Base Current . - 3A > Safe Operating Region at (or below) 25 oc Case Temperature . - See Figure 5 > Continuous Device Dissipation at (or below) 25 C Case . Temperature (See Note 3) . . oe - 65 W > Continuous Device Dissipation at (or below