BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * * * * * Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak F
BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Cur
BAT54LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 3 1 2 * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ IF = 10 mAdc SOT-23 * We declare that the material of product compliance with RoHS requirements. CATHODE ANODE 1 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAT54LT1G JJV3 3000/Tape&Reel LBAT54LT3G JV3 10000/Tape&Reel MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PD 225 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Tstg - 55 to +150 C Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteri
BAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 3 CATHODE 1 ANODE 3 MARKING DIAGRAM 1 2 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating JV3 M G G SOT-23 (TO-236AB) CASE 318 STYLE 8 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA (Note: Microdot may be in either location) Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C *Date Code orientation and
BAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 3 CATHODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating 1 ANODE Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Non-Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Junction Temperature TJ -55 to +125 C (Note: Microdot may be in either locati
15TLT1G LDTC123ELT1G LDTC123JLT1G LDTC123TLT1G LDTC123YLT1G LDTC124ELT1G LDTC124GLT1G LDTC124TLT1G LDTC124XLT1G LDTC125TLT1G LDTC143ELT1G LDTC143TLT1G LDTC143XLT1G LDTC143YLT1G LBAS40-06LT1G LBAS40LT1G LBAS70-04LT1G LBAS70-05LT1G LBAS70-06LT1G LBAS70LT1G LBAT54LT1G LBAT54ALT1G LBAT54CLT1G LBAT54SLT1G SMBAT54LT1G LRB411DLT1G LRB421LT1G LRB425LT1G LRB491DLT1G CHBAT54ALT1G CHBAT54LT1G Copper wire conversion PCN LDTC144GLT1G LDTC144TLT1G LDTC144VLT1G LDTC144WLT1G LDTD114ELT1G LDTD123ELT1G LDTD123YLT1G SLBAT54CLT1G LBAV23SLT1G LSD2004SLT1G LDAN202KLT1G SNLBAV99LT1G LM1MA152WKLT1G Page 3 of 3
may be affected. JV3 M G G 1 JV3 M G = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BAT54LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 16 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V
... 2-TO-92 6-SOT-363 6-SOT-363 26K3669 45J0772 26K3670 0.54 0.07 0.69 0.13 0.69 0.12 50 60 100 750 750 790 25 25 150 DO-41 DO-41 DO-201 10N9426 10N9427 10N9429 0.37 0.16 0.37 0.18 0.72 0.57 BAT SERIES BAT54ALT1G BAT54CLT1G BAT54CTT1G BAT54CWT1G BAT54HT1G BAT54LT1G BAT54SLT1G BAT54SWT1G BAT54T1G BAT54WT1G BAT54XV2T1G MBD301G* MBD330DWT1G MBD54DWT1G MBR150RLG MBR160RLG MBR3100RLG MBRF2060CTG* MBRF SERIES MBR SERIES MBD SERIES 60 852 ... 3-TO-220 45J0786 1.57 0.79 7 30 7 7 45 70 600 450 600 600 700 500 ... ... ... 0.6 0.6 ... 3-SOT-23 3-SOT-23 3-SOT-23 3-SOT-23 3-SOT-93 3-SOT-23 88H4769 88H4772 45J1510 45J1513 26K4532 88H4777 0.38 0.04 0.42 0.29 0.67 0.10 0.67 0.09 0.67 0.10 0.38 0.07 7 30 70 600 450 1V ... ... ... 2-SOD-323 2-SOD-323 2-SOD-323 26K4555 98H0800 26K4556 0.36 0.27 0.36 0.07 0.36 0.08 70 70 500 1V ... 0.2 2-SOD-123 3-SC-70 10N9702 26K4534 0.44 0.24 0.33 0.06 23 23 20 30 30 270 270 440 350 325 5 ... 5 0.5 1 2-SOD-323 6-SOT-563 2-SOD-323 2-SOD-923 2-SOD-923 10N9706 42K2368 10N9707 10N970
rmation on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2014 December, 2014 - Rev. 13 Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR
40 40 70 70 70 30 30 30 30 30 20 40 40 120 120 120 70 70 70 200 200 200 200 30 500 100 100 Max (pF) 5 5 5 2 2 2 10 10 10 10 1.5 20 6 6 STYLE (A) (B) (C) LBAS40LT1G LBAS40-04LT1G LBAS40-06LT1G LBAS70-04LT1G LBAS70-06LT1G LBAS70LT1G LBAT54ALT1G LBAT54CLT1G LBAT54LT1G LBAT54SLT1G LMBD301LT1G LRB411DLT1G LRB421LT1G LRB425LT1G VR (V) 1 1 1 0 0 0 1 1 1 1 15 10 10 10 (D) VF Max IF (V) (mA) 0.5 30 0.5 30 0.5 30 0.75 10 0.75 10 0.75 10 0.4 10 0.4 10 0.4 10 0.4 10 0.6 10 0.5 500 0.34 10 0.34 10 (E) IR Max (A) 1 1 1 0.1 0.1 0.1 2 2 2 2 2 30 30 30 VR (V) 25 25 25 50 50 50 25 25 25 25 25 10 10 10 E C B C B E B A E C E E E A 3 (F) 3 2 Style 2 1 1 Package 12. SC-88 Surface Mount Schottky Diodes Device LBAT54DW1T1G Device Marking VR (V) IF (mA) VF@IF (V) IR@VR (mA) (uA) (V) KLD 30 200 1.0 100 2.0 25 LBAT54SDW1T1G KL8 30 200 1.0 100 2.0 25 6 5 4 6 5 4 1 2 3 1 2 3 5 4 6 3 1 2 Package STYLE 14 Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 13. Plastic-Sealed Axial 1-5A Schottky Barrier Rectifiers Device 1N5817
may be affected. JV3 M G G 1 JV3 M G = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BAT54LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 16 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V
may be affected. JV3 M G G 1 JV3 M G = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BAT54LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 16 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V
28.59 14311 max. V IF av max. mA IFS (t<1 sec) non-rep, max. mA VF max. V @ IF mA Configuration Mftrs. List No. 30 30 30 30 200 200 200 200 600 600 600 600 0.4 0.4 0.8 0.4 10 10 100 10 Common Anode Common Cathode Common Anode Series BAT54ALT1G BAT54CLT1G BAT54LT1G BAT54SLT1G 50 200 500 1 100 Common Anode BAV74LT1G 70 70 70 70 70 70 100 15 215 200 215 200 -- 100 500 500 500 500 1.25 1 1.25 1.25 1.25 1.25 150 15 150 150 150 150 Single Series Common Cathode Series Series BAL99LT1G BAS70-04LT1G BAV199LT1G BAV70LT1G BAV99LT1G BAW56LT1G 75 200 500 1.25 150 Single BAS116LT1G 100 200 500 1 10 Single MMBD914LT1G 120 200 625 1.25 200 Single BAS19LT1G 200 200 625 1.25 200 Single BAS20LT1G 250 200 625 1.25 200 Single BAS21LT1G 496718 Mftrs. Price Each List No. Order Code BAL99LT1G BAS116LT1G BAS19LT1G BAS20LT1G BAS21LT1G BAS70-04LT1G BAT54ALT1G BAT54CLT1G BAT54LT1G BAT54SLT1G BAV199LT1G BAV70LT1G BAV74LT1G BAV99LT1G BAW56LT1G MMBD914LT1G 143-1103 143-1104 143-1105 143-1106 143-1107 143-1108 143
SC70 DUAL COMM CATH 2 3000 .133 3000 BAT54CXV3T1 A SC-89 DUAL COMMON CATHODE 1 3000 .147 3000 BAT54HT1 A SS SOD323 SHKY DIO 30V TR 2 3000 .133 3000 BAT54HT1G A SS SOD323 SHKY DIO 30V TR 2 3000 .133 3000 BAT54LT1 A SS SOT23 SHKY DIO 30V TR 2 3000 .133 3000 BAT54LT1G A SS SOT23 SHKY DIO 30V TR 2 3000 .133 3000 BAT54SLT1 A SS SOT23 SHKY DIO 30V TR 2 3000 .153 3000 BAT54SLT1G A SS SOT23 SHKY DIO 30V TR 2 3000 .153 3000 BAT54SWT1 A SS SC70 SHKY DIO 30V TR 2 3000 .133 3000 BAT54SWT1G A SS SC70 SHKY DIO 30V TR 2 3000 .133 3000 BAT54T1 A SS SOD123 SHKY DIO 30V 2 3000 .184 3000 BAT54T1G A SS SOD123 SHKY DIO 30V 2 3000 .184 3000 BAT54WT1 A SS SC70 SHKY DIO 30V TR 2 3000 .153 3000 BAT54WT1G A SS SC70 SHKY DIO 30V TR 2 3000 .153 3000 BAT54XV2T1 A SCHOTTKY DIODE SOD523 2 3000 .0533 3000 BAV199LT1 A SS SOT23 DUAL DIO 70V TR 2 3000 .06 3000 BAV199LT1G A SS SOT23 DUAL DIO 70V TR 2 3000 .06 3000 BAV70DXV6T1 A SS SOT563 SWITCH DIODE 2 4000 .08 4000 BAV70DXV6T5 A SS SOT563 SWITCH DIODE 2 8000 .08 8000 BAV70LT1 A SS
S70-05W BAS70-06 BAS70-07 BAS70L BAS70LT1 BAS70W BAS81 BAS81TI BAS85 BAS85 BAS86 BAT17 BAT18 BAT254 BAT254 BAT41 BAT42 BAT43 BAT48 BAT54 BAT54 BAT54-7 BAT54-7 BAT54A BAT54A BAT54AW BAT54AW BAT54C BAT54FILM BAT54HT1 BAT54HT1 BAT54L BAT54L BAT54LT1 BAT54LT1 BAT54LT1G BAT54S BAT54S BAT54SLT1 BAT54SLT3 BAT54STA BAT54STR BAT54SW BAT54SW BAT54T1 BAT54T1 BAT54TA BAT54TR BAT54TW BAT54WS Selection Guide Infineon Package SOT23 SOT23 SOT323 SOT23 Packages Competition Package Infineon Type NXP, Diodes Inc. Vishay Semiconductor NXP, Diodes Inc. NXP NXP, Diodes Inc., Microsemi Vishay Semiconductor, NXP NXP NXP NXP NXP Diodes Inc. OnSemiconductor NXP NXP NXP NXP, Diodes Inc. Vishay Semiconductor NXP, Diodes Inc., Lite-On ST Microelectronics Vishay Semiconductor, Zetex NXP, ST Microelectronics Vishay Semiconductor NXP NXP NXP, Diodes Inc. NXP OnSemiconductor NXP, ST Microelectronics Vishay Semiconductor NXP NXP NXP NXP NXP NXP NXP NXP ST Microelectronics ST Microelectronics, Vishay Semiconductor ST Microelectron