2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () VGS(th) (V) 2 at VGS = 10 V * TrenchFET(R) Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free * ESD Protected: 2000 V 0.47 Available RoHS* APPLICATIONS 0.33 COMPLIANT * Direct Logic-Level Interface: TTL/CMOS * Solid-State Relays * Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. * Battery Operated Systems TO-226AA (TO-92) TO-92-18RM (TO-18 Lead Form) 1 S G D Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S Top View 1 D Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code 100 G Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 2
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () VGS(th) (V) 2 at VGS = 10 V * TrenchFET(R) Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free * ESD Protected: 2000 V 0.47 Available RoHS* APPLICATIONS 0.33 COMPLIANT * Direct Logic-Level Interface: TTL/CMOS * Solid-State Relays * Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. * Battery Operated Systems TO-226AA (TO-92) TO-92-18RM (TO-18 Lead Form) 1 S G D Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S Top View 1 D Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code 100 G Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 2
2N7000KL vs. 2N7000 Description: N-Channel, 60 V (D-S) MOSFET Package: TO-92 Pin Out: Identical Part Number Replacements: 2N7000KL-TR1 Replaces 2N7000-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free Version) Replaces 2N7000-TR1 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 2N7000KL 2N7000 Drain-Source Voltage VDS 60 60 Gate-Source Voltage VGS 20 20 0.47 0.2 Continuous Drain Current TA = 25 C See Notes 0.37 IDM Pulsed Drain Current Power Dissipation ID TA = 25 C See Notes Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a Unit V 0.13b A 1.0 0.5 0.8 0.4 0.51a 0.16b Tj and Tstg - 55 to 150 - 55 to 150 C RthJA 156 312.5 C/W PD W Notes: a. ID and PD at 70 C. b. ID and PD at 100 C. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol 2N7000KL Min Typ 2N7000 Max Min Typ Max 2 3.0 Unit Static V(BR)DSS 60 Gate-Threshold Voltage VG(th) 1.0 Gate-Body Leakage IGSS 1000 10 nA Zero Gate Voltage Drain
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () VGS(th) (V) 2 at VGS = 10 V * TrenchFET(R) Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free * ESD Protected: 2000 V 0.47 Available RoHS* APPLICATIONS 0.33 COMPLIANT * Direct Logic-Level Interface: TTL/CMOS * Solid-State Relays * Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. * Battery Operated Systems TO-226AA (TO-92) TO-92-18RM (TO-18 Lead Form) 1 S G D Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S Top View 1 D Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code 100 G Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 2
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () VGS(th) (V) 2 at VGS = 10 V * TrenchFET(R) Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free * ESD Protected: 2000 V 0.47 Available RoHS* APPLICATIONS 0.33 COMPLIANT * Direct Logic-Level Interface: TTL/CMOS * Solid-State Relays * Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. * Battery Operated Systems TO-226AA (TO-92) TO-92-18RM (TO-18 Lead Form) 1 S G D Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S Top View 1 D Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code 100 G Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 2
2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems TO-92-18RM (TO-18 Lead Form) Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S D 1 Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code Top View Top View Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 100 W G S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) Pulsed Drain TA = 25_C TA = 70_C Currenta Power Di
2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems TO-92-18RM (TO-18 Lead Form) Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S D 1 Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code Top View Top View Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 100 W G S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) Pulsed Drain TA = 25_C TA = 70_C Currenta Power Di
2N7000KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET CHARACTERISTICS * N-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCH
2N7000KL_BS170KL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (C/W) Foot Junction to Ambient Case RT1 83.0302 N/A N/A RT2 8.3350 N/A N/A RT3 15.6655 N/A N/A RT4 49.2151 N/A N/A Thermal Capacitance (Joules/C) Junction to Ambient Case Foot CT1 114.1183 m N/A N/A CT2 72.6898 u N/A N/A C
ONT. For quantities of 2000 and up, call for quote. Siliconix Part No. MOUSER STOCK NO. Package 781-SUM110N04-04-E3 781-SUD25N04-25-E3 781-2N7002K-E3 781-SI1022R-E3 SUM110N04-04-E3 TO-263 SUD25N04-25-E3 TO-252 2N7002K-T1-E3 SOT-23 SI1022R-T1-E3 SC-75A 781-2N7000KL-E3 2N7000KL-TR1-E3 TO-92 SI3458DV-T1-E3 TSOP-6 781-SI3458DV-E3 781-SQ7414EN-T1-E3 SQ7414EN-T1-E3 PowerPak 1212-8 SI4850EY-T1-E3 SO-8 781-SI4850EY-T1-E3 SI7414DN-T1-E3 PowerPak 1212-8 781-SI7414DN-E3 SI7120DN-T1-E3 PowerPak 1212-8 781-SI7120DN-T1-E3 SI7850DP-T1-E3 PowerPakSO-8 781-SI7850DP-E3 SI4470EY-T1-E3 SO-8 781-SI4470EY-T1-E3 781-SI7370DP-T1-E3 SI7370DP-T1-E3 PowerPakSO-8 SI7460DP-T1-E3 PowerPakSO-8 781-SI7460DP-T1-E3 SI7478DP-T1-E3 PowerPakSO-8 781-SI7478DP-T1-E3 TO-252 781-SUD50N06-09L-E3 SUD50N06-09L-E3 TO-263 781-SUB60N06-18-E3 SUB60N06-18-E3 781-SUP60N06-18-E3 SUP60N06-18-E3 TO-220AB 781-SUP75N06-08-E3 SUP75N06-08-E3 TO-220AB 781-SUP90N06-5M0P-E3 SUP90N06-5M0P-E3 TO-220AB SIE876DF-T1-GE3 PolarPak 781-SIE876DF-GE3 S
rademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VQ1000P VQ1000J 2N7000 BS170 VQ1000P-E3 2N7000KL-TR1-E3 2N7000KL-TR1 2N7002-VA
available (Q/Y) Pb Free "2nd-Level Interconnect" Status Pb-free Qual. Complete and Report Available (Q/Y) Product Description MOSFETS 2/04 3/03 2/04 100% Sn matte None Alloy42 add "-E3" YES 2/04 3/03 2/04 None 1 9 9 03014 June, 03 PMOS, Small Signal, TO- 2N7000KL, TNxxxxKL, VNxxxxKL, TPxxxxKL, 92 VPxxxxKL SI 2/04 3/03 2/04 100% Sn matte None Alloy42 add "-E3" YES 2/04 3/03 2/04 None 1 9 9 03014 June, 03 PMOS, TSOP-6 Si3xxxDV SI 2/04 3/03 2/04 100% Sn matte None Cu add "-E3" YES 2/04 3/03 2/04 None 1 9 9 03014 June, 03 PMOS, SOIC Si4xxxDY, SixxxEY, Si9xxxDY, Si9xxxEY SI 2/04 3/03 2/04 100% Sn matte None Cu add "-E3" YES 2/04 3/03 2/04 High Temperature die attach solder 1 9 9 03014 June, 03 PMOS, ChipFET Si5xxxDC SI 2/04 3/03 2/04 100% Sn matte None Cu add "-E3" YES 2/04 3/03 2/04 None 1 9 9 03014 June, 03 PMOS, ChipFET PowerPASi5xxxDU SI 2/04 3/03 2/04 100% Sn matte None Cu add "-E3" YES 2/04 3/03 2/04 None 1 9 9 03014 June, 03 PMOS, TSSOP-8 Si6xxxDQ SI 2/04 3/03 2/04 100% Sn matte None Cu add "-