2N7000A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C *High density cell design for low RDS(ON). A *Voltage controolled small signal switch. *Rugged and reliable. *High saturation current capablity. N E K G J D MAXIMUM RATING (Ta=25) RATING UNIT H F Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS1) VDGR 60 V Gate-Source Voltage VGSS 20 V ID 200 IDP 500 Drain Power Dissipation PD 400 mW Junction Temperature Tj 150 Tstg -55150 Continuous Drain Current Pulsed Storage Temperature Range L F 1 2 C SYMBOL 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1. SOURCE 2. GATE 3. DRAIN mA TO-92 EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0
2N7000A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C *High density cell design for low RDS(ON). A *Voltage controolled small signal switch. *Rugged and reliable. *High saturation current capablity. N E K G J D MAXIMUM RATING (Ta=25) RATING UNIT H F Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS1) VDGR 60 V Gate-Source Voltage VGSS 20 V ID 200 IDP 500 Drain Power Dissipation PD 400 mW Junction Temperature Tj 150 Tstg -55150 Continuous Drain Current Pulsed Storage Temperature Range L F 1 2 C SYMBOL 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1. SOURCE 2. GATE 3. DRAIN mA TO-92 EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0
.05 0.55 0.95 1.90 1.0+0.2 -0.1 1.3Max 0.2MIN KTK5162S 0.45+0.15 -0.05 KD 2.4 +0.3 -0.2 KTK5134S 1.3+0.2 -0.15 G SMD Type MOSFET SMOS FET (THD Type) ) RDS(ON) ( VDS (V) VGS (V) Min. Max. VDS (V) VGS (V) 2N7000 60 20 300 625 1 60 0 1.1 2.3 VGS 250 2.1 5 50 2N7000A 60 20 200 400 1 48 0 0.8 3 VGS 500 5.3 4.5 75 Outline (Unit: mm) TO-92 4.8Max 3.7Max ID (mA) Max. Package ID (mA) VGSS ID PD (mV) (mA) (mW) Max. 1.0 _+ 0.5 1.0 14.0 0.85 0.55Max 4.7Max 2N7000K (ESD Protected 2000V) 60 20 300 625 1 60 0 1.1 2.35 VGS 250 2.1 5 3.7Max 0.45Max 1.27 Vth (V) VDS (V) 0.45 ) IDSS ( Max. Ratings Type No. 2.3 50 RF MOSFET (SMD Type) S 21(OFF) 2 (dB) Mark Package Min VSC (V) Outline (Unit: mm) f (GHz) 7 10 150 -3 0 0.86 -30 5 0.86 SOT-23 0.55 KTK920U MA 7 10 200 -2 0 1 -30 5 0.45+0.15 -0.05 M1 0.95 1.90 10 200 -2.5 0 1 -30 3.3 1 USQ 1.25 _+0.15 0.42 0.70 7 2.10 +_0.20 MC 1.30 KTK920BU MB 7 10 200 -2 0 1 -30 5 1 KTK920T MA 7 10 900 -2 0 1 -30 5 1 7 10 900 -2.5 0 1 -30 3.3 1 TSQ +_0.10 1.6 +0.20/-0.10 MC 1.90 +_0.20
112 113 114 114 114 115 116 117 http://www.keccorp.com 3 Index 2N2904E 2N2906E 2N3904 2N3904C 2N3904E 2N3904S 2N3904U 2N3904V 2N3906 2N3906C 2N3906E 2N3906S 2N3906U 2N3906V 2N5400 2N5400S 2N5401 2N5401C 2N5401S 2N5550 2N5550S 2N5551 2N5551C 2N5551S 2N7000 2N7000A 2N7000K 2N7002 2N7002A 2N7002K B10A100VIC B10A45VI B10A45VIC B10A60VIC B15A45VIC B15A60VIC B20A100VIC B20A45VIC B20A60VIC B30A45VIC B5A100VI B5A45VI B5A45VIC B5A60VI B5A60VIC BC237 BC238 BC239 BC307 BC308 BC309 BC327 BC328 BC337 BC338 BC516 BC517 BC546 BC547 BC548 BC549 BC550 BC556 BC557 BC558 BC559 BC560 BC637 BC638 BC807 BC817 BC846 BC846W BC847 BC847W BC848 BC848W BC849 BC850 BC856 BC856W BC857 BC857W BC858 BC858W 4 Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SBD SB
2N7000A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 7000A K 3 No. Item 816 4 Marking Description 2N Series Name 7000A Device Name KEC K KEC CORP. Lot No. 816 Device Name 2004. 2. 11 2 Revision No : 0 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week 1/1
quence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 May 2000 Document order number: 9397 750 07153 Mouser Electronics Related Product Links 771-2N7000AMO - NXP 2N7000 AMO
430 Diode KEC 2N5551C Transistor KEC BF423 Transistor KEC KDB2855E Diode KEC KDV143EL Diode KEC 2N5551S Transistor KEC BF599 Transistor KEC KDB2891E Diode KEC KDV143F Diode KEC 2N7000 SMOS FET KEC BFQ31 Transistor KEC KDB2893E Diode KEC KDV143UL Diode KEC 2N7000A SMOS FET KEC BFS20 Transistor KEC KDB2895E Diode KEC KDV147 Diode KEC 2N7000K SMOS FET KEC BSS63 Transistor KEC KDR105 SBD KEC KDV1470 Diode KEC 2N7002 SMOS FET KEC BSS64 Transistor KEC KDR105S SBD KEC KDV1471 Diode KEC 2N7002A SMOS FET KEC E25A2CPR Alternator Diode KEC KDR322 SBD KEC KDV1472 Diode KEC 2N7002K SMOS FET KEC E25A2CPS Alternator Diode KEC KDR331 SBD KEC KDV1480 Diode KEC B10A100VIC SBD KEC E30A23VPR Alternator Diode KEC KDR331E SBD KEC KDV149 Diode KEC B10A45VI SBD KEC E30A23VPS Alternator Diode KEC KDR331V SBD KEC KDV152S Diode KEC B10A45VIC SBD KEC E30A23VR Alternator Diode KEC KDR357 SBD KEC KDV153 Diode KEC B10A60VIC SBD KEC E30A23VS Alternator Diode KEC KDR357E SBD KEC KDV154 Diode KEC B15A45VIC SBD KEC E30A27VR Altern
5 200 10 - 320 2 0.15 -0.05 2.1 _+0.1 1.25 _+0.1 KTX321U 0.650.65 1.3 _+_0.1 2.0 +0.2 10 0.9_+0.1 3 Note) * : Under development SMOS FETs (THD Type) Max. RDS(ON) ( ID (mA) Max. VGS (V) ) Package ID (mA) 2N7000 60 20 300 625 1 60 0 1.1 2.3 VGS 250 2.1 5 50 2N7000A 60 20 200 400 1 48 0 0.8 3 VGS 500 5.3 4.5 75 2N7000K (ESD Protected 2000V) 60 20 300 625 1 60 0 1.1 2.35 VGS 250 2.1 5 50 94 http://www.kec.co.kr Outline (Unit: mm) 4.70Max 1.00 TO-92 14.00 _+0.5 0.85 1.27 Min. VDS (V) 3.70Max 0.45Max 0.45 VGS (V) 0.55Max 0.45 1.27 Vth (V) ) VDS (V) 1.00 IDSS ( VGSS ID PD (mV) (mA) (mW) Max. 3.70Max VDS (V) 4.80Max Max. Ratings Type No. 2.30
430 Diode KEC 2N5551C Transistor KEC BF423 Transistor KEC KDB2855E Diode KEC KDV143EL Diode KEC 2N5551S Transistor KEC BF599 Transistor KEC KDB2891E Diode KEC KDV143F Diode KEC 2N7000 SMOS FET KEC BFQ31 Transistor KEC KDB2893E Diode KEC KDV143UL Diode KEC 2N7000A SMOS FET KEC BFS20 Transistor KEC KDB2895E Diode KEC KDV147 Diode KEC 2N7000K SMOS FET KEC BSS63 Transistor KEC KDR105 SBD KEC KDV1470 Diode KEC 2N7002 SMOS FET KEC BSS64 Transistor KEC KDR105S SBD KEC KDV1471 Diode KEC 2N7002A SMOS FET KEC E25A2CPR Alternator Diode KEC KDR322 SBD KEC KDV1472 Diode KEC 2N7002K SMOS FET KEC E25A2CPS Alternator Diode KEC KDR331 SBD KEC KDV1480 Diode KEC B10A100VIC SBD KEC E30A23VPR Alternator Diode KEC KDR331E SBD KEC KDV149 Diode KEC B10A45VI SBD KEC E30A23VPS Alternator Diode KEC KDR331V SBD KEC KDV152S Diode KEC B10A45VIC SBD KEC E30A23VR Alternator Diode KEC KDR357 SBD KEC KDV153 Diode KEC B10A60VIC SBD KEC E30A23VS Alternator Diode KEC KDR357E SBD KEC KDV154 Diode KEC B15A45VIC SBD KEC E30A27VR Altern