d for dc operation E The 2N6106-2N6111, 2N6288-2N6293, and 2N6473- = 2N6476 are epitaxial-base silicon transistors supplied in a cg VERSAWATT package. The 2N6288-2N6293, 2N6473, and (FLANGE) OC 4 2N6474 are n-p-n complements of p-n-p types 2N6106- 2N6111, 2N6475, and 2N6476, respectively. All these H transistors are intended for a wide variety of medium-power TOP VIEW Lio8 switching and amplifier applications, such as series and shunt regulators and driver and output stages of high- 9208-40186 fidelity amplifiers. JEDEC TO-220AA The 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit into TO-213AA sockets. The remaining types are supplied in the JEDEC TO-220AB straight-lead version of the VERSAWATT pack- age. All of these devices are also available on special order in a variety of lead-form configurations. *Formerly RCA Dev. Nos. TA7784, TA8323, TA7783, TA8232, TA7782, TA8231, TA8444, and TA8723, respectively. Formerly RCA Dev. Nos. TA8210, TA7741, TA8211, TA77
curves specitied for de operation The RCA-2N6106-2N6111, 2N6286-2N6293, and 2N6473- 2N6476 are epitaxial-base silicon transistors supplied in a VERSAWATT package. The 2N6288-2N6293, 2N6473, and 2N6474* are n-p-n complements of p-n-p types 2N6106- 2N6111, 2N6475, and 2N6476", respectively. All these transistors are Intended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high- fidelity amplifiers. The 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit into TO-213AA sockets. The remaining types are supplied in tha JEDEC TO-220A8B straight-lead version of the VERSAWATT pack- age. Ail of these devices are also available on special order in a variety of lead-form configurations. Formerly RCA Dev. Nos. TA7784, TA8323, TA7783, TA8232, TA7782, TA8231, TAB444, and TA8723, respectively. Formerly RCA Dev. Nos. TA8210, TA7741, TA8211, TA7742, TA8212, TA7743, TA8445, and TA8722, r
n curves specified for de operation The RCA-2N6106-2N6111, 2N6288-2N6293, and 2N6473- 2N6476 are epitaxial-base silicon transistors supplied in a VERSAWATT package. The 2N6288-2N6293, 2N6473, and 2N6474 are n-p-n complements of p-n-p types 2N6106- 2N6111, 2N6475, and 2N6476", respectively. All these transistors are Intended for a wide varlety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high- tidelity amplifiers. The 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit Into TO-213AA sockets. The remaining types are supplied in the JEDEC TO-220AB straight-lead version of the VERSAWATT pack- age. All of these devices are also avallable on special order in a variety of laad-form configurations. *Formerly RCA Dev. Nos. TA7784, TA8323, TA7783, TA8232, TA7782, TA8231, TA8444, and TA8723, respectlvaly. Formerly RCA Dev, Nos. TA8210, TA7741, TA8211, TA7742, TA&212, TA7743, TA8445, and TA8722, r
2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION *With TO-220 package *Low collector saturation voltage *Excellent safe operating area APPLICATIONS *General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS 2N6475 VCBO Collector-base voltage -100 Open base 2N6476 VEBO Emitter-base voltage V -130 2N6475 Collector-emitter voltage UNIT -110 Open emitter 2N6476 VCEO VALUE V -120 Open collector -5 V IC Collector current -4 A IB Base current -2 A PT Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 MAX UNIT 3.125 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unles
2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION *With TO-220 package *Low collector saturation voltage *Excellent safe operating area APPLICATIONS *General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6475 VCBO Collector-base voltage -100 Open base 2N6476 VEBO Emitter-base voltage V -130 2N6475 Collector-emitter voltage UNIT -110 Open emitter 2N6476 VCEO VALUE V -120 Open collector -5 V IC Collector current -4 A IB Base current -2 A PT Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 3.125 /W SavantIC Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unle
2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473, 2N6475 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage (RBE=100) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N6473 2N6475 110 110 100 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N6473 2N6475 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=Rated VCEO, VBE=1.5V 100 ICEV VCE=Rated VCEO, VBE=1.5V, TC=100C 2.0 ICER VCE=Rated VCER, RBE=100 100 ICER VCE=Rated VCER, RBE=100, TC=100C 2.0 ICEO VCE=1/2
2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473, 2N6475 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage (RBE=100) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N6473 2N6475 110 110 100 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N6473 2N6475 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=Rated VCEO, VBE=1.5V 100 ICEV VCE=Rated VCEO, VBE=1.5V, TC=100C 2.0 ICER VCE=Rated VCER, RBE=100 100 ICER VCE=Rated VCER, RBE=100, TC=100C 2.0 ICEO VCE=1/2
40 Ps | TOP66] L32 55V } 45V 5v 2A 150C 30WC 3M 15MN 1A] AHG [RCB| BD240C | 2N6109 1 BO240A PS | TOP66| L32 7OV | 60V 5V 2A 150C 30WC 3M 15MN 1A} AHG |RCB | BD240C | 2N6107 1 BD240B PS | TOP66} L32 gov | 80V | SV 2A 150 30WC 3M 15MN 1A| AHG |RCB} BD240C | 2N6475 1 Bo240C PS | TOP66| L32 115V |100V 5V 2A 150C 30WC 3M 15MN 1A} AHG |RCB} BD240C | 2N6475 1 B0241 NS | TOPG66] L32 55V | 45V 5V 3A 150C 40WC 3M 25MN 1A] AHG |RCB} BD241C | 2N6290 1 BD241A NS | TOPE6} 132 7OV | GOV | 5V 3A 150 40wc 3M 25MN 1A] AHG JRCB | BD241C | 2N6292 1 BD241B8 NS | TOP66| L32 gov | 80V 5v 3A 150C 40WC 3M 25MN 1A] AHG JRCB | BD241C | 2N6473 1 BD241C NS |} TOP66] L32 115V |100V 5V 3A 150C 40WC 3M 25MN 1A] AHG |RCB {| BO241C | 2N6743 1 BD242 PS | TOP66| L32 55V | 45V SV 3A 150C 40WC 3M 25MN LA|AHG [ACB } BD242C | 2N6109 1 80242A PS | TOPEB] L32 TOV 6OV | 5V 3A 150C 40wc 3M 25MN 1A] AHG JRCB | BD242C | 2N6107 1 Bo242B PS | TOPG6} L32 gov | B0V 5V 3A 150C 40WC 3M 25MN 1A] AHG |RCB | BD242C | 2N6475
hos: 8.0 Typ Trans Conductance A: 7.0 Gate Threshold min: 2.1 Gate Threshold max: 3.9 Resistance Switching ton: 10 Typ Resistance Switching toff: 45 Typ Resistance Switching ID: 11.6 Case Style: TO-262/I-2 PAK Polarity: Industry Type: SPI12N50C3 STI Type: 2N6475 Notes: Polarity: PNP Power Dissipation: 40 VCEV: 110 VCEO: 100 ICEV: 100 ICEV A: .10 hFE: 15 hFE A: 4.0 VCE: 1.2 VBE: 2.0 IC: 1.5 COB: 250 fT: 10 Case Style: TO-220AB/TO-220: Industry Type: 2N6475 STI Type: SPI20N60C3 Notes: Breakdown Voltage: 650 Continuous Current: 20.7 RDS(on) Ohm: 0.19 Trans Conductance Mhos: 17.5 Typ Trans Conductance A: 13.1 Gate Threshold min: 2.1 Gate Threshold max: 3.9 Resistance Switching ton: 10 Typ Resistance Switching toff: 67 Typ Resistance Switching ID: 20.7 Case Style: TO-262/I-2 PAK Polarity: Industry Type: SPI20N60C3 STI Type: SPI21N50C3 Notes: Breakdown Voltage: 560 Continuous Current: 21 RDS(on) Ohm: 0.19 Trans Conductance Mhos: 18 Typ Trans Conductance A: 13.1 Gate Threshold min: 2.1 Gate
-1A @2A @-2A @2A @-2A FEO sa @5A Fla 5A FE@ 5A f= 8 MHz min. f= 4 MHz min. = i f7 = 4 MHz min. = = T in. T f7 = 5 MHz min. T Zz min ty = 10 MHz min. f= 5 MH typ. f= 6 MHz min. f= 5 Mie typ. f 25 MH typ, cT cT ct ANSE 675 675 676 676 677 677 678 678 2N6473 2N6475 2N6248 Vegpitus-110V Vegpisusi lov VcERISUS) = 105 V Pellet sizevalues shown are edge dimensions he _-30-150 ne = 20-100 in thousands-of-an-inch (mits). f,=5 MHz typ. ty = 6 MHz min. T cT 676 677 ** Aca . or _ ape Available with free-air radiator Raja = 30 CAV 2N6474 2N6476 "TA" designations (e.g, TA8662) in this booklet Vege (susi=130V Vocgaiss130 are Developmentai-iype devices. h_=30-150 h..=30-150 FE, FE File No. (e.g. File No.413E), where shown, relates @1A @-1A to the data bulletin. f [= 5 MHz typ. f= 5 Milz typ. CTComplementary Type available, see matrix or 676 on Complementary-Pair Power Types.COMPLEMENTARY -PAIR POWER TYPES Pometaniat Beseieotexetae Ig 15to2A e725 A 1,3 to 3.54 I, 4to6A 1, 12t0 174 N-P-N PNP N-P-N PNP N-P-N PNP NP
P41C 3 APX D45VM10 1 GESY BU407 a APX BUT21B 3 APX TIP30C a APK SGSI MOTA STD3705 1 SOD ST44C12 3 STI BUT93 a ALGG TIP30C TIP32B 3 APX TIP36 $TD3718 1 SOD TIP62 MJE13007 a MOTA BD240C 1 RCA | TIPS2B STD3875 1 SOD STD3723 1 $00 BC547 1 PHIN MJE13070 a MOTA 2N6475 3 RCA 80242B 1 RCA STD3877 1 SOD STD3728 1 SOD D45C6 1 GESY $T13005 3 STI 2N6476 3 RCA D45C11 1 GESY | TIP36A BD710 3 SGSI 2N6109 a RCA $TI13005 3 STI BD140 a PHIN $TD3511 1 SOD STD3876 sod D45VH10 a GESY BCX70G 3 PHIN $U378 3 MIKG BD940 3 PHIN STD3515 1 SOD 2N6109 MOTA | TIP42C BCX70H a PHIN TE13005 a ALGG BD942 3 PHIN 2N6107 3 RCA BD204 APX BD244C 1 RCA BCX70J 3 PHIN 7 TIP100 045012 3 GESY 2N6126 3 MOTA | TIP44 $TD3719 + SOD BCX70K a PHIN SDM4000 3 SODI TIP30A 3 MOTA SGSI BD201 1 PHIN STD3724 1 SOD BD240 3a RCA TIP 101 TIPSOB 3 MOTA BD240B 3 RCA BO243 1 ACA $TD3732 1 SOD ST45C6 a STi BO647 a APX SGSI 80244B 3 SGSI D44VM4 1 GESY 2N6107 3a RCA THBC547 3a SPR OE263 3 DGE TiP31 BOD952 a PHIN SP44H 1 SODI 2N6126 3 MOTA | TIP62A SDM4001 3 SOD
JT.SLB * * Power Bipolar Transistor 2N6292 Q2N6292 PWRBJT.SLB * * Power Bipolar Transistor 2N6465 Q2N6465 PWRBJT.SLB * * Power Bipolar Transistor 2N6473 Q2N6473 PWRBJT.SLB * * Power Bipolar Transistor 2N6474 Q2N6474 PWRBJT.SLB * * Power Bipolar Transistor 2N6475 Q2N6475 PWRBJT.SLB * * Power Bipolar Transistor 2N6476 Q2N6476 PWRBJT.SLB * * Power Bipolar Transistor 2N6486 Q2N6486 PWRBJT.SLB * * Power Bipolar Transistor 2N6487 Q2N6487 PWRBJT.SLB * * Power Bipolar Transistor 2N6488 Q2N6488 PWRBJT.SLB * * Power Bipolar Transistor 2N6489 Q2N6489 PWRBJT.SLB * * Power Bipolar Transistor 2N6490 Q2N6490 PWRBJT.SLB * * Power Bipolar Transistor 2N6491 Q2N6491 PWRBJT.SLB * * Power Bipolar Transistor 2N6542 Q2N6542 PWRBJT.SLB * * New for 8.0 Device Type Generic Name Mfg. Name Symbol Name Library Tech Type Model Package Power Bipolar Transistor 2N6544 Q2N6544 PWRBJT.SLB * * Power Bipolar Transistor 2N6545 Q2N6545 PWRBJT.SLB * * Power Bipolar Transistor 2N6546 Q2N6546 PWRBJT.SLB * * Power Bipolar Tr
-1A @2A @-2A @2A @-2A FEO sa @5A Fla 5A FE@ 5A f= 8 MHz min. f= 4 MHz min. = i f7 = 4 MHz min. = = T in. T f7 = 5 MHz min. T Zz min ty = 10 MHz min. f= 5 MH typ. f= 6 MHz min. f= 5 Mie typ. f 25 MH typ, cT cT ct ANSE 675 675 676 676 677 677 678 678 2N6473 2N6475 2N6248 Vegpitus-110V Vegpisusi lov VcERISUS) = 105 V Pellet sizevalues shown are edge dimensions he _-30-150 ne = 20-100 in thousands-of-an-inch (mits). f,=5 MHz typ. ty = 6 MHz min. T cT 676 677 ** Aca . or _ ape Available with free-air radiator Raja = 30 CAV 2N6474 2N6476 "TA" designations (e.g, TA8662) in this booklet Vege (susi=130V Vocgaiss130 are Developmentai-iype devices. h_=30-150 h..=30-150 FE, FE File No. (e.g. File No.413E), where shown, relates @1A @-1A to the data bulletin. f [= 5 MHz typ. f= 5 Milz typ. CTComplementary Type available, see matrix or 676 on Complementary-Pair Power Types.PLASTIC-PACKAGED POWER TYPES te = 2 A max. Ie =-2 A max. fo= 1A mex. lo =7 Amex. le = ~7 A mex. i, = 16 A max. te = -15 A max. Ig 24 Amex. i
89 3N248-M 2N6467 98 2N6606 189 3N249 3N249-M EM 2N6468 98 2N6607 189 3N249-M 2N6469 95 2N6608 189 3N250 3N250-M EM 2N6470 95 2N6648 95 3N250-M 2N6471 95 2N6649 95 3N251 2N6472 95 2N6650 95 3N251-M 2N6473 104 2N6666 104 3N252 2N6474 104 2N6667 104 3N252-M 2N6475 104 2N6668 104 3N253 3N254-M EM 174 2N6476 104 2N6671 95 3N254 3N254-M EM 175 2N6486 104 2N6672 95 3N254-M 2N6487 104 2N6673 95 3N255 3N255-M EM 2N6488 104 2N6674 96 3N255-M 2N6489 104 2N6675 96 3N256 2N6490 104 2N6714 107 3N256-M 2N6491 104 2N6715 107 3N257 2N6497 105 2N6716 107 3N257-M 2N6498 105 2N6717 107 3N258 2N6499 105 2N6718 107 3N258-M 174 174 Closest equivalent SE Exact mechanical (slight to significant equivalent, C ntralTM Semiconductor Co.'p. electrical and/or mechanical slight electrical differences. differences) EM Exact electrical SM Exact electrical equivalent, 174 174 174 174 3N251-M EM 3N252-M EM 174 174 174 174 175 175 175 3N256-M EM 175 175 3N257-M EM 175 175 3N258-M and mechanical. slight mechanical EM 175 175 * Spec
-1A @2A @-2A @2A @-2A FEO sa @5A Fla 5A FE@ 5A f= 8 MHz min. f= 4 MHz min. = i f7 = 4 MHz min. = = T in. T f7 = 5 MHz min. T Zz min ty = 10 MHz min. f= 5 MH typ. f= 6 MHz min. f= 5 Mie typ. f 25 MH typ, cT cT ct ANSE 675 675 676 676 677 677 678 678 2N6473 2N6475 2N6248 Vegpitus-110V Vegpisusi lov VcERISUS) = 105 V Pellet sizevalues shown are edge dimensions he _-30-150 ne = 20-100 in thousands-of-an-inch (mits). f,=5 MHz typ. ty = 6 MHz min. T cT 676 677 ** Aca . or _ ape Available with free-air radiator Raja = 30 CAV 2N6474 2N6476 "TA" designations (e.g, TA8662) in this booklet Vege (susi=130V Vocgaiss130 are Developmentai-iype devices. h_=30-150 h..=30-150 FE, FE File No. (e.g. File No.413E), where shown, relates @1A @-1A to the data bulletin. f [= 5 MHz typ. f= 5 Milz typ. CTComplementary Type available, see matrix or 676 on Complementary-Pair Power Types.PLASTIC-PACKAGED POWER TYPES te = 2 A max. Ie =-2 A max. fo= 1A mex. lo =7 Amex. le = ~7 A mex. i, = 16 A max. te = -15 A max. Ig 24 Amex. i