2N5954, 2N5955, 2N5956 Silicon P-N-P Medium-Power Transistors . General-Purpose Types for Switching Applications tx (FLANGE) TERMINAL DESIGNATIONS Features: = Low saturation voltages us Maximum-safe-area-of-operation curves High gain at high current 8 92CS-27516 JEDEC TO-213AA iF RCA-2N5954, 2N5955, and 2N5956e are multiple-epitaxial p-n-p transistors, All are supplied In the JEDEC TO-213AA package. All these transistors are Intended for a wide variety of medium-power switching and amplifier applications, such as series regulators and output stages of high-fidelity amplifiers. Formerly RCA Dev. Nos. TA7264, TA7265, and TA7266, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5954 2N5955 2N5956 Vopa scssescccones fevveeee beeeeepeeeeas Deepen tame t pet tenreseeeneaee -90 -70 -50 v Vcex(sus) Voc H 1.5 V, Roe= 100 Qc ececececrscereteseseerecauceventeeserereat -90 -70 -50 v Vcea(Sus) Rae = 100 DQ errsceseencencenes deere decree ccceesaseecesiornenee os -B5 -65 45 v
2N5954, 2N5955, 2N5956 HARRIS SEMICOND SECTOR 27E D M@@ 4302272 0019907 7 MHAS T33-14 Silicon P-N-P Medium-Power TERMINAL DESIGNATIONS Transistors . General-Purpose Types for Switching Applications EN (FLANGE) Features: = Low saturation voltages a Maximum-safe-area-of-operation curves @ High gain at high current 9208-27516 JEDEC TO-213AA The 2N5954, 2N5955, and 2N5956e are multiple-epitaxial p-n-p transistors. All are supplied in the JEDEC TO-213AA package. All these transistors are intended for a wide variety of medium-power switching and amplifier applications, such as series regulators and output stages of high-fidelity amplifiers. Formerly RCA Dev. Nos. TA7264, TA7265, and TA7266, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5954 2N5955 2N5956 NCB cece eee e eee e center ene seen tee e eee nD ees Ete eee Rent neta reese -80 -70 -50 Vv * Voex(sus) Vaz = 1.5 V, Rae = 1002 -90 -70 -50 v Vcen(sus) . Ree = 1002 85 -65 45 Vv Veeo(sus).... -80 -60 -40 Vv "Vepo
2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION *With TO-66 package *Low collector-emitter saturation voltage *Excellent safe operating area *Complement to type 2N6372 2N6373 2N6374 APPLICATIONS *Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS 2N5954 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5955 Open emitter 70 2N5956 50 2N5954 80 2N5955 Emitter-base voltage UNIT 90 Open base 2N5956 VEBO VALUE 60 V V 40 Open collector 5 V IC Collector current 6 A IB Base current 2 A PD Total Power Dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~200 VALUE UNIT 4.3 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistor
2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION *With TO-66 package *Low collector saturation voltage *Excellent safe operating area *Complement to type 2N6372/6373/6374 APPLICATIONS *Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol R O T UC Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS 2N5954 Collector-base voltage 2N5955 EMIC Open emitter S E G N A H C IN Collector-emitter voltage 2N5956 2N5954 2N5955 Open base 2N5956 Emitter-base voltage OND VALUE UNIT -90 -70 V -50 -80 -60 V -40 Open collector -5 V IC Collector current -6 A IB Base current -2 A PD Total Power Dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~200 VALUE UNIT 4.3 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5954 2N5955
2N5954 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio... 1 of 2 http://www.americanmicrosemi.com/information/spec/?ss_pn=2N5954 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5954 Availability Online Store Diodes Buy 2N5954 at our online store! Transistors Integrated Circuits Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5954 Information Optoelectronics Did you Know... Thyristors Category Transistors Products Not only is AMS a leading Class Transistors; Bipolar; Si PNP Power electronics distributor, we Search for Parts Type Transistors; Bipolar; Si PNP Power Request a Quote Test Houses parts to your exacting 2N5954 Specifications Information Spec Sheets Military/High-Rel : N Testimonials Store Policies Contact Us are being launched all the time. Give us a call to find V(BR)CEO (V) : 80 FAQs Company specifications? New AMS semiconductor product
2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION *With TO-66 package *Low collector saturation voltage *Excellent safe operating area *Complement to type 2N6372/6373/6374 APPLICATIONS *Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5954 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5955 Open emitter -70 2N5956 -50 2N5954 -80 2N5955 Emitter-base voltage UNIT -90 Open base 2N5956 VEBO VALUE -60 V V -40 Open collector -5 V IC Collector current -6 A IB Base current -2 A PD Total Power Dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.3 UNIT /W SavantIC Semiconductor Product Specification 2N5954 2N5955 2N5956 Silicon PNP Power Transisto
75 W max. Py = 75 W max. (T0-39) (T0-66)** (T0-68)** VERSAWATT VERSAWATT {T0-3) (T0-3) VERSAWATT VERSAWATT (TO-220) (T0-220) (T0-220) {T0-220) 90 x 90 90 x 90 90 x 90 90 x 90 90 x 90 150 x 150 150 x 150 150 x 150 150 x 150 Family Designation 2N5781 2N6372 2N5954 2N6292 2N6107 2N6472 2N6248 2N6488 2N6491 [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N]} [P-N-P] 2N6288 2N6110 2N5783 2N6374 2N5956 2N6289 2N6111 2N6470 2N6469 2N6486 2N6489 Vcen(SUS) = -45| Vcent(Sus)= 45 Vv | VeeRiSUS)=-45V] VceRISUS)=40 Vv | VceRiSUS) = 40V Vegas 45 Vegpisus = ~45V Vege (ius 50V Vcpplsus)= -50V hee = 20-100 bre = 20-100 hpe = 20-100 hee = 30-150 hee * 30-150 heg= 20-150 he p= 20-150 he -=20-150 @-16A @3A @-3A @3A @-3A S@5A S@ -5A "*@ 5A tp = 8 MHz min. f7 = 4 MHz min. f= 5 MHz min. ft = 4 MHz min. f= 10 MHz min, ,=5 MHz typ. fy26 MHz min. f,=5 MHz typ. f= 5 MHz typ. cr cT cT cr File No, 413 File No. 675 File No.675 File No.676 File No. 676 File No. 677 File No. 677 File No. 678 File No. 678 2N6290 2N6
KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER KER MoT MOT MOT MOT MoT MOT mot | MOT MOT MOT MOT MOT MOT MoT NEC NEC NEC MOT MoT MOT KER KER 2N5686 2N2222A 2N2222A 2N5583 2N5587 2N5954 BLY504 2N5954 BD260 BDX16 BLYSOA BDX16 BDY72 BDX14 BU215 2N5954 BU214 BOX16 BU215 BDX16 BLYSOA BLX84 BDY60B BDx96 BDY90 BD314 Bu109 BDx96 BDYS0 BD314 BDY60B BLX84 BDOY58 BLX84 2N3448 BLX84 BDY58 8DX50 BDX50 BDxs0 BDX50 BDX50 BDXx50 BFT17 BFT17 BFT17 BD232 8D232 BO232 2N4348 2N6341 2N6372 2N6372 2N5954 2N6372 2N6468 2N3441 2N5954 2N6372 2N6372 2N5954 2N6372 2N6468 2N3441 2N6248 2N5038 2N5872 2N5038 2N3792 2N5882 2N6248 2N6360 2N5872 2N3448 2NG6438 2N3448 2N6248 2N6248 2N5672 2N3773 2N3773 2N3773 2N3773 2N3773 2N3773 2N5835 2N5835 2N5835
75 W max. Py = 75 W max. (T0-39) (T0-66)** (T0-68)** VERSAWATT VERSAWATT {T0-3) (T0-3) VERSAWATT VERSAWATT (TO-220) (T0-220) (T0-220) {T0-220) 90 x 90 90 x 90 90 x 90 90 x 90 90 x 90 150 x 150 150 x 150 150 x 150 150 x 150 Family Designation 2N5781 2N6372 2N5954 2N6292 2N6107 2N6472 2N6248 2N6488 2N6491 [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N]} [P-N-P] 2N6288 2N6110 2N5783 2N6374 2N5956 2N6289 2N6111 2N6470 2N6469 2N6486 2N6489 Vcen(SUS) = -45| Vcent(Sus)= 45 Vv | VeeRiSUS)=-45V] VceRISUS)=40 Vv | VceRiSUS) = 40V Vegas 45 Vegpisus = ~45V Vege (ius 50V Vcpplsus)= -50V hee = 20-100 bre = 20-100 hpe = 20-100 hee = 30-150 hee * 30-150 heg= 20-150 he p= 20-150 he -=20-150 @-16A @3A @-3A @3A @-3A S@5A S@ -5A "*@ 5A tp = 8 MHz min. f7 = 4 MHz min. f= 5 MHz min. ft = 4 MHz min. f= 10 MHz min, ,=5 MHz typ. fy26 MHz min. f,=5 MHz typ. f= 5 MHz typ. cr cT cT cr File No, 413 File No. 675 File No.675 File No.676 File No. 676 File No. 677 File No. 677 File No. 678 File No. 678 2N6290 2N6
2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N5954 2N6372 90 90 85 80 2N5955 2N6373 70 70 65 60 5.0 6.0 2.0 40 -65 to +200 4.3 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N5954 2N5955 2N6372 2N6373 SYMBOL TEST CONDITIONS MIN MAX MIN
0MHz 80MHz 30MHz 30MHz 35nC 39nC 39nC 40nC PD 40W 40W 40W 40W 2N5428A 2N5428X 2N5429 2N5430 2N5430X 2N5597 2N5598 2N5599 2N5600 2N5601 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5611A 2N5612 2N5612A 2N5660 2N5661 2N5664 2N5665 2N5954 2N5955 2N5956 2N6049 2N6049E 2N6077 2N6077CECC 2N6078 2N6079 2N6079CECC 2N6233 2N6235 2N6235R 2N6235X 2N6245 2N6260 2N6261 2N6296 2N6297 PRODUCT 2N2919CECC NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) PNP TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) NPN TO66 (TO213AA) PNP TO66 (TO213AA) PNP TO66 (TO213AA) PNP TO66 (TO213AA) PNP TO66 (TO213AA) PNP
75 W max. Py = 75 W max. (T0-39) (T0-66)** (T0-68)** VERSAWATT VERSAWATT {T0-3) (T0-3) VERSAWATT VERSAWATT (TO-220) (T0-220) (T0-220) {T0-220) 90 x 90 90 x 90 90 x 90 90 x 90 90 x 90 150 x 150 150 x 150 150 x 150 150 x 150 Family Designation 2N5781 2N6372 2N5954 2N6292 2N6107 2N6472 2N6248 2N6488 2N6491 [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N]} [P-N-P] 2N6288 2N6110 2N5783 2N6374 2N5956 2N6289 2N6111 2N6470 2N6469 2N6486 2N6489 Vcen(SUS) = -45| Vcent(Sus)= 45 Vv | VeeRiSUS)=-45V] VceRISUS)=40 Vv | VceRiSUS) = 40V Vegas 45 Vegpisus = ~45V Vege (ius 50V Vcpplsus)= -50V hee = 20-100 bre = 20-100 hpe = 20-100 hee = 30-150 hee * 30-150 heg= 20-150 he p= 20-150 he -=20-150 @-16A @3A @-3A @3A @-3A S@5A S@ -5A "*@ 5A tp = 8 MHz min. f7 = 4 MHz min. f= 5 MHz min. ft = 4 MHz min. f= 10 MHz min, ,=5 MHz typ. fy26 MHz min. f,=5 MHz typ. f= 5 MHz typ. cr cT cT cr File No, 413 File No. 675 File No.675 File No.676 File No. 676 File No. 677 File No. 677 File No. 678 File No. 678 2N6290 2N6
BIAS 2NS945 NS | X28 L65 | 36V 16V ay | 800mA 200C | 15WC - 25P 20mn 200mA | UMP | MOT 2N5946 NS | X28 L65 | 36V 16V 4yv 2A 200C | 37WC - 45P 20mn 500mA | UHP | MOT 2N5947 NS | X27 L64 | 40V 30V 3V | 400mA 200C | 5WC 1100M | 4P0 25/250 75mA UMP | MOT | - 2N5954 PS | To66 L43. | 90V gov 5V |6A 200C | 40wCc 5M - 20mn 2A RHH | RCA | 2N5954 2NS5955 PS | TO6S 143 | 70V 60V SV | 64 200C | 40WC 5M - 20mn 2500mA | RHG | RCA | 2N5954 2N5956 PS | Toes L43 | 50V 40V SV |6A 200C | 40WC 5M - 20mn 3A RHG | RCA | 2N5954 2N5957 NS | TO61 La6 | 100V 100V 10V | 20A 200C | 100WC 10M 350P | 30/120 10A AHH | KER | BUYS4 2N5959 2N5958 PS | 7061 L46 | 100V 100V 10V | 204 200C | 100WC 10M 675P | 30/120 OA AHH | KER | 2NS5960 2N5959 NS | TO61 L4 | 100V 100V 10V | 204 200C | 100WC 10M 350P | 30/120 104 AHH | KER | BUY54 2N5957 2N5960 PS | TO61 L46 | 100V 100V 10V | 20A 200C | 100WC 10M 675P | 30/120 104 AHH | KER | 2NS958 2N5961 NS {| TO92 | L14 | 60V 60V sv /50mA 125C | 625MWF 100M
75 W max. Py = 75 W max. (T0-39) (T0-66)** (T0-68)** VERSAWATT VERSAWATT {T0-3) (T0-3) VERSAWATT VERSAWATT (TO-220) (T0-220) (T0-220) {T0-220) 90 x 90 90 x 90 90 x 90 90 x 90 90 x 90 150 x 150 150 x 150 150 x 150 150 x 150 Family Designation 2N5781 2N6372 2N5954 2N6292 2N6107 2N6472 2N6248 2N6488 2N6491 [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N] [P-N-P] [N-P-N]} [P-N-P] 2N6288 2N6110 2N5783 2N6374 2N5956 2N6289 2N6111 2N6470 2N6469 2N6486 2N6489 Vcen(SUS) = -45| Vcent(Sus)= 45 Vv | VeeRiSUS)=-45V] VceRISUS)=40 Vv | VceRiSUS) = 40V Vegas 45 Vegpisus = ~45V Vege (ius 50V Vcpplsus)= -50V hee = 20-100 bre = 20-100 hpe = 20-100 hee = 30-150 hee * 30-150 heg= 20-150 he p= 20-150 he -=20-150 @-16A @3A @-3A @3A @-3A S@5A S@ -5A "*@ 5A tp = 8 MHz min. f7 = 4 MHz min. f= 5 MHz min. ft = 4 MHz min. f= 10 MHz min, ,=5 MHz typ. fy26 MHz min. f,=5 MHz typ. f= 5 MHz typ. cr cT cT cr File No, 413 File No. 675 File No.675 File No.676 File No. 676 File No. 677 File No. 677 File No. 678 File No. 678 2N6290 2N6
2N5954 2N5955 2N5956 SILICON POWER TRANSISTORS 6.0 AMPERE . . + ott MEDIUM-POWER ...General-Purpose Types for Switching Applications PNP SILICON TRANSISTOR in Military, Industrial and Commercial Equipment. 40, 60, 80 VOLTS 40 WATTS COMPLEMENTS TO 2N6372, 2N6273, 2N6274 e LOW SATURATION VOLTAGES @ MAXIMUM-SAFE-AREA-OF-OPERATION CURVES THERMAL-CYCLE RATINGS e HERMETICALLY-SEALED JEDEC TO-66 PACKAGE > e HIGH GAIN AT HIG TO-66 MAXIMUM RATINGS RATINGS* SYMBOL | 2N5954 | 2N5955 | 2N5956 | UNITS Collector-Emitter Voltage Vero 80 60 40 Vdc Collector-Base Voltage Veso 90 70 50 Vdc Emitter-Base Voltage VeRO 5 Vdc Collector Current -- Continuous le 6 Adc Base Current -- Continuous ly 2 Adc Transistor Dissipation @T,=25C Py 4.0 W T, = 25C 5.8 wc Operating & Storage Junction Temperature Range T; Tote -65 to +200 "Cc Pin Temperature (During Soldering) @ distances > 4" (0.8mm) from seating plane for 10s max +235 *In accordance with JEDEC registration data For pnp devices, voltage and current values