s * bos Vv Gate to Source Voltage -40V GS Vgp Gate to Drain Voltage -40 V a r e 0120 . 0180 Ig Gate Current 50 mA inves e nore source TS isoate roti | a7 0028 hy NOMS eu ORDERING INFORMATION TO-72 WAFER CHIP 2N4117 2N4117/W | 2N4117/D 2N4117A | 2N4117A/W |2N4117A/D 2N4118 2N4118/W 2N4118/D 2N4118A | 2N4118A/W | 2N4118A/D, 2N4119 2N4119/W 2N4119/D 2N4119A | 2N4119A/W | 2N4119A/D ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N4117 2N4118 2N4119 PARAMETER 2N4117A 2N4118A 2N4119A UNIT TEST CONDITIONS MIN MAX MIN MAX MIN MAX BVGss Gate-Source Breakdown Voltage ~-40 -40 -40 Vv Ig =-1 4A, Vps=0 loss Gate Reverse Current -10 -10 ~10 pA VGgs= -20 V, Vps=0 IGsgg (+100C) Gate Reverse Current 728 728 ~25 nA VG6s= -20 V. Vpg = 0 Ve6s (off) Gate-Source Pinch-Off Voltage -0.6 -1.8 ~1 -3 -2 -6 Vv Vps=10V,Ip=1nA Drain Current at Zero Gate Vps=10V Ipss Voltage (Note 1} 0.02 0.09 0.08 0.24 0.20 0.60 mA vag=0 Common-Source Forward Vos = 10V Sts Transconductance (Note 1} 70 210 80 260 100 330 umho f= 1kHz