2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors 2N37 24 (SILICON) Vceo = 30 to 50V Ic =I1A on3/25 f; = 300 MHz 2N4013 2N4014 NPN silicon annular low-power transistors primarily de- signed for high-speed saturated switching applications. MAXIMUM RATINGS Rating Symbol | 2Navsa | anavee | Unit Collector-Emitter Voltage Voro 30 50 Vde Collector-Base Voltage Voz 50 30 Vde Emitter~Base Voltage Vez 6.0 Vde Collector Current Io 1.0 Adc Total Device Dissipation @ Ty = 25C Pp 800 360 mW CASE 31 CASE 22 Derate above 25C 4.6 | 2.06| mw/c (TO-5) > Total Device Di
2N4014 CASE 22-03, STYLE 1 TO-18 (TO-206AA) MAXIMUM RATINGS Rating Symbot | 2N4013 | 2N4014 | Unit 3 Collectar Collector-Emitter Voltage VcEO 30 50 Vde Collector-Base Voltage VcBO 50 80 Vde 2 Emitter-Base Voltage VEBO 6.0 Vde Base. Collector Current Continuous Ic 1.0 Adc 3 Peak 2.0 214 1 Emitter Total Device Dissipation @ Ta = 25C Pp 0.5 Watt Derate above 25C 28.6 mWwrc Total Device Dissipation @ Tce = 25C Pp 14 Watts Derate above 26C 6.8 mwWwrc SWITCHING TRANSISTORS Operating and Storage Junction Td Tstg -65 to +200 C NPN SILICON Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbat | Min Typ Max Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage(1) ViBRICEO Vde (l = 10 mAdg, Ig = 0) 2N4014 50 _ 2N4013 30 _ Collector-Emitter Breakdown Voltage VIBR)CES Vde (Ic = 10 wAdc, Vee = 0) 2N4014 80 _ _ 2N4013 50 _ _ Collector-Base Breakdown Voltage ViBRICBO Vde (Ilo = 10 wAde, IE = 0) 2N4014 8
SA 400M} A] 200 35 30] 0 20 E 15M] T 2N4009 Matched Pair 2N4006 2N4010 Matched Pair 2N4&007 ON4011 Matched Pair 2N4008 2N4012 S IN 9-110 LPA 11.6W] Cj 200 65 40| O| 4.0 40 L.OA 1.0} 0.25A 400M] T 2N4013 SIN 8-257 HSS 360M] Al 200 60 40] 0 150 LOOM 300M] T 2N4014 S iN 8-257 HSS 360M| A; 200 80 50; 0 150 100M 300M] T 2R4015 S )P DFA 0.4W) Ay 200 60 60) 0) 135] 350 1.0M 0.25 SOM} 135 gE 200M} T 2N4016 Ss )P DFA 0.4W| A] 200 60 60] O|] 135} 350 1.0M 0.25 50M} 135 E 200M| T 2N4017 S |P AFA 600M} A] 200 80 80] O] 100] 500 1.0M 40M] T 2N4018 SEP AFA 400M} A] 200 60 60] 0 100 E 7,0M! E 2N4019 S ;P AFA 400M} A] 200 45 45t 0 250 E 5OM| T 2N4020 S }P DFA 0.4W) Al 200 45 45} O] 250} 500 1O* 0.25 10M] 250 E 50M] T 2N4021 S |P DFA O.4W] Ay 200 60 60] O}] 100) 350 10* 0.25 10M| 100 E 40M! T 2N4022 S |P DFA O.4W] Al 200 60 60] O}] 250) 500 1L0* 0.25 LOM] 250 E 50M| T 2N4023 S |P DFA O.4W] A} 200 45 45| O| 250} 500 1o* 0.25 LOM} 250 E 50M) T 2N4024 S |P DFA O.4W/ Al 200 60 6Q| QO} 100) 350 Lox 0.25 1oM} 100 E 40M
12} 01} 40 | 200 10M 0.3 30M 13; E 1.3G | T 2N3960 |) S)N 8-292} HNS |} 400M] A } 200 20 12} 0} 40 } 260 LOM 8.3 30M 16} E] 1.66)T 2N396L |S|N 9-74 | HPA 10W } c | 200 65 40,0 400M | T 1-144Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
0 20 80 1.0A 0.1 10M 150M} T 2N3764 |S] P 8-273] HSS O.5W | A | 200 40 4010 30 | 120 1.0A O.1 10M 180M | T 2N3765 |S | P 8-273 | HSS O.5wW fA | 200 60 60 | 0 20 80 1.0A O.1 10M 150M | T 1-142Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
0 20 80 1.0A 0.1 10M 150M} T 2N3764 |S] P 8-273] HSS O.5W | A | 200 40 4010 30 | 120 1.0A O.1 10M 180M | T 2N3765 |S | P 8-273 | HSS O.5wW fA | 200 60 60 | 0 20 80 1.0A O.1 10M 150M | T 1-142Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
SA 400M} A] 200 35 30] 0 20 E 15M] T 2N4009 Matched Pair 2N4006 2N4010 Matched Pair 2N4&007 ON4011 Matched Pair 2N4008 2N4012 S IN 9-110 LPA 11.6W] Cj 200 65 40| O| 4.0 40 L.OA 1.0} 0.25A 400M] T 2N4013 SIN 8-257 HSS 360M] Al 200 60 40] 0 150 LOOM 300M] T 2N4014 S iN 8-257 HSS 360M| A; 200 80 50; 0 150 100M 300M] T 2R4015 S )P DFA 0.4W) Ay 200 60 60) 0) 135] 350 1.0M 0.25 SOM} 135 gE 200M} T 2N4016 Ss )P DFA 0.4W| A] 200 60 60] O|] 135} 350 1.0M 0.25 50M} 135 E 200M| T 2N4017 S |P AFA 600M} A] 200 80 80] O] 100] 500 1.0M 40M] T 2N4018 SEP AFA 400M} A] 200 60 60] 0 100 E 7,0M! E 2N4019 S ;P AFA 400M} A] 200 45 45t 0 250 E 5OM| T 2N4020 S }P DFA 0.4W) Al 200 45 45} O] 250} 500 1O* 0.25 10M] 250 E 50M] T 2N4021 S |P DFA O.4W] Ay 200 60 60] O}] 100) 350 10* 0.25 10M| 100 E 40M! T 2N4022 S |P DFA O.4W] Al 200 60 60] O}] 250) 500 1L0* 0.25 LOM] 250 E 50M| T 2N4023 S |P DFA O.4W] A} 200 45 45| O| 250} 500 1o* 0.25 LOM} 250 E 50M) T 2N4024 S |P DFA O.4W/ Al 200 60 6Q| QO} 100) 350 Lox 0.25 1oM} 100 E 40M
2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725,
2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth P
35 70 2.0M 100M | T 2N3855 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18 | 0 60 | 120 2.0M 130M | T 2N3855A | S | N | MPS6512 5-109} RFC O,2W 4] A | 150 30 3010 60 | 120 2.0M 130M | T 1-143Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
te < 15 ns DUTY CYCLE ~ 2% lo 20 50 100 7-146 Ic, COLLECTOR CURRENT (mA) 300 500 1000 OSCILLOSCOPE *Von = BASE-EMITTER OFF BIAS VOLTAGE EQUIVALENT CIRCUIT FOR MEASURING STORAGE AND FALL TIMESSwitching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NWSwitching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
30 | css 15 2N4268 | P 0/001 | 0.005] 30 | ass 15 2N4302 | N 5.0 1.0] 30 | DGO 6.0 2N4303 | N 10 1.0] 30 | pGo 6.0 2N4304 | N 15 1:0] 30 | peo 6.0 2n4338 | N 0.2 | 0.6 0.1{ 50 | DGO 6.0 1-168Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
or Vee,set) g S So = S = g = $ 2 5 3 _ Voe{rary @ fells = 10 ~ for 10 2.0 5.0 10 20 50 100-200 0 20 40 60 80 100 320 140 160 180 200 Io, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) 5-15Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.
MHz 2N3490 60 40/120 5.0 1.0 3.0 0.3 Case 9 2N3491 80 40/120 5.0 1.0 3.0 0.3 (70-61) 2N3492 100 30/90 5.0 1.0 3.0 0.3 II\QQKL},]} WN A QGV,. WC X DK QQ) WW Ql |'"M)NWWWWWD oe F AGDA nz i|I\){Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.