6AA) 80V 2N3767U3 NPN SMD0.5 (TO276AA) 80V 2N3867SMD05 PNP SMD0.5 (TO276AA) 40V 2N3867U3 PNP SMD0.5 (TO276AA) 40V 2N3868SMD05 PNP SMD0.5 (TO276AA) 60V 2N3868U3 PNP SMD0.5 (TO276AA) 60V 2N3879SMD05 NPN SMD0.5 (TO276AA) 75V 2N3879U3 NPN SMD0.5 (TO276AA) 75V 2N3996SMD05 NPN SMD0.5 (TO276AA) 80V 2N3996U3 NPN SMD0.5 (TO276AA) 80V 2N3997SMD05 NPN SMD0.5 (TO276AA) 80V 2N3997U3 NPN SMD0.5 (TO276AA) 80V 2N3998SMD05 NPN SMD0.5 (TO276AA) 80V 2N3998U3 NPN SMD0.5 (TO276AA) 80V 2N3999SMD05 NPN SMD0.5 (TO276AA) 80V 2N3999U3 NPN SMD0.5 (TO276AA) 80V 2N4910XSMD05 NPN SMD0.5 (TO276AA) 40V 2N4910XU3 NPN SMD0.5 (TO276AA) 40V LM337HVSMD-8QR-B Negative -1.5A 50V Variable 0.40% 1.50% - Positive 1A 4.3V to 3.3V 7.5V - 2.40% 1V Positive 1A 4.3V to 3.3V 7.5V - 2.40% 1V Positive 1.5A 0.20% 0.50% 2V Positive 0.20% 0.50% 2V 1.00% 1.00% 2V 1.00% 1.00% 2V 0.20% 0.50% 2V 0.20% 0.50% 2V 1.00% 1.00% 2V 1.00% 1.00% 2V 0.20% 0.50% 2V IC(cont) 7.5V to 5V 25V 7.5V to 5V 1.5A 25V 7.5V to 5V 1.5A 25V 7.5V to 5V 1.5A 25V 14
necessary to comply with this revision shall be completed by 29 September 1999 INCH-POUND MIL-PRF-19500/374D 29 June 1999 SUPERSEDING MIL-S-19500/374C 01 May 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die. 1.2 Physical dimensions. See 3.3 and figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N3998 and 2N3999, 3 lead stud package), figure 3, and figure 4 (JANHC and JANKC). 1.3 Maximum ratings. PT 1/ TA = +25C PT 2/ TC = +1
n measures necessary to comply with this revision shall be completed by 30 July 2009. MIL-PRF-19500/374E 30 April 2009 SUPERSEDING MIL-PRF-19500/374D 29 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die. * 1.2 Physical dimensions. See figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N3998 and 2N39
2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS zed 2N3996, 2N3997) 338 Max Vee(sat) of 0.25 Vat 1A Ie 2 y @ Max t,, of 300 ns at 1 A I; mo e Min fy of 40 MHz 287 ~ *mechanical data aig 28 THE ACTIVE ELEMENTS ARE ELECTRICALLY INSULATED FROM THE CASE 3 N SEATING PLANE =4 G2 O20 max = 9.070 Ia 10-32 UNF-2A 9.090 / et os i. =8 MAX STUD TORQUE rr a) 1S Was - | a IOp0O ALL JEDEC 10-111 % core max t__ 2888 DIMENSIONS AND | 2N3996 Loa aaat NOTES ARE ls 2N3997 oor APPLICABLE 6.040 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE SEATING PLANE eso max 0070 ma Tr o508 AK wT a cousctor 0.090 MIN oot {0.1 Mak SUD FORQUE ---~ _ {. (SEE NOTES ABB, vs Nas rf Wen yet wom 0423 0473 T CT oan 0430 Teta si Norec | ALL JEDEC 0-111 [ a | DIMENSIONS AND 2N3998 OOP MAKT a5 ons ue DIA 2 MASE 1 EMITTER NOTES ARE 2N3999 owe ose oa APPLICABLE NOTE
oltage, Voro Collector-Emitter Voltage, Vere Emitter-Base Voltage, Vigo .... D.C, Collector Current, I, ........ Power Dissipation 25C AmbIeNt occ 100C Case oi. Operating and Storage Temperature Range 0000.0. MECHANICAL SPECIFICATIONS JAN, JANTX, & JANTXV 2N3996 JAN, JANTX, & JANTXV 2N3997 JAN, JANTX, & JANTXV 2N3998 JAN, JANTX, & JANTXV 2N3999 DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply pulse amplifier and similar high efficiency power switching applications. 65C to 200C JAN, JANTX, & JANTXV 2N3996, 2N3997 TO-111 b- A 9 | H 4 | BASE a ry E \ tS | -coutector cca =o | DN = eT Ea f | 4 : 10-32 + NF-2A /s& ~ Z THREAD G , emirter/, - CASE _ JAN, JANTX, & JANTXV 2N3888, 2N3999 TO-59 (_T__incues [MICLIMETERS Emitter A] 400-455 10.16-11.56 _ B | 090-150 [228-381 BASE, Cc -320-.468 8.13-11.88 cottector D | 570-763 14 48-19.38 E | 318-380 8.07-9.65 fF] ose Gi | aoe Sat G 4
s and found 5 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. file:///G|/imaging/BITTING/seme_html/2N3964.php.html [26-Mar-2002 9:36:17 AM] Search Results Part number search for devices beginning "2N3996" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/IC FT PD 2N3996 NPN TO111 80V 5A 40 120 2/1 40MHz 30W 2N3996-JQR-B NPN TO111 80V 5A 40 120 2/1 40MHz 30W 2N3996SMD NPN SMD1 (TO276AB) 80V 5A 40 120 2/1 40MHz 30W 2N3996SMD05 NPN SMD0.5 (TO276AA) 80V 5A 40 120 2/1 40MHz 20W 2N3996SMD05-JQR-B NPN SMD0.5 (TO276AA) 80V 5A 40 120 2/1 40MHz 20W 2N3996SMD-JQR-B NPN SMD1 (TO276AB) 80V 5A 40 120 2/1 40MHz 30W Searched through 3083 records and found 6 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. file:///G|/imaging/BITTING
8) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 DEVICES LEVELS 2N3996 2N3997 2N3998 2N3999 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 8.0 Vdc IB 0.5 Adc Base Current Collector Current Total Power Dissipation IC (2) @ TA = +25C @ TC = +100C (3) Operating & Storage Junction Temperature Range 10 (1) Adc PT 2.0 30 W TJ, Tstg -65 to +200 C 3.33 C/W Thermal Resistance, Junction-to-Case RJC Note: (1) This value applies for Tp 1.0ms, duty cycle 50% (2) Derate linearly 11.4 mW/C for TA > +25C (3) Derate linearly 300 mW/C for TC > +100C TO-111 2N3996, 2N3997 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parame
2N3996 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * High-speed power switching * Power transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3996J) * JANTX level (2N3996JX) * JANTXV level (2N3996JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV * * * * * Radiation testing (total dose) upon request Hermetically sealed TO-x metal can Also available in chip configuration Chip geometry 9201 Reference document: MIL-PRF-19500/374 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 8 Volts IC 5 A 2 11
p Emitter-Base Voltage, Visg ... .. .... D.C. Collector Current, I, .. .. Peak Cotlector Current, Ic. Power Dissipation 25C Ambient . 100C Case rn Operating and Storage Temperature Range . . . MECHANICAL SPECIFICATIONS . . 65C to 200C JAN, JANTX, & JANTXV 2N3996 JAN, JANTX, & JANTXV 2N3997 JAN, JANTX, & JANTXV 2N3998 JAN, JANTX, & JANTXV 2N3999 DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply pulse amplifier and similar high efficiency power switching applications. oe LOOV bo te oe BOV . . _ 5A 1OA ta. OW J... 30W JAN, JANTX, & JANTXV 2N3986, 2N3997 TO-111 AH - p> ~ ka rt o | Ho pase Cc | I Oh 6 ro | | | E i | = COLLECTOR = +f [ INCHES | MILLIMETERS A [400 - 455 10 16 - 1155 p= F B | .090- 250 228-635 | F=9) C | 320 - 468 813 - 1188 10-32 NF-2A ae D | 570 - 763 14.48 - 1938 THREAD EMITTER- E | 065 - 090 165 - 2.28 G- F [313-318 | 7.95- 807 CASE G [970 - 090 1.77 - 2.28 H | 423 - 43
0 JAN2N3960 251 20 X 251 20 JANTXV2N2218A JANTXV2N2218A 399 16 X 399 16 JANTX2N3960 2N3960 JANTX2N3960 2N3960 251 20 X 251 20 JAN2N2218ALJAN2N2218AL 399 16 X 399 16 JANTXV2N3960 JANTXV2N3960 251 20 X 251 20 JANTX2N2218AL 2N2218AL JANTX2N2218AL 2N2218AL JAN2N3996 374 100 X 100 374 JAN2N3996 251 20 X X 251 20 JANTXV2N2218AL JANTXV2N2218AL 374 100 100 374 JANTX2N3996 2N3996 JANTX2N3996 2N3996 374 100 X 100 374 JANTXV2N3996 JANTXV2N3996 251 20 251 20 JAN2N2219 JAN2N2219 374 100 X 100 374 JAN2N3997 JAN2N3997 251 20 X 251 20 JANTX2N2219JANTX2N2219 374 100 X 100 374 JANTX2N3997 2N3997 JANTX2N3997 2N3997 251 20 X 251 20 JANTXV2N2219 JANTXV2N2219 2N2219 2N2219 374 100 X 100 374 JANTXV2N3997 JANTXV2N3997 251 20 X 251 20 JANS2N2219 JANS2N2219 374 100 X 100 374 JAN2N3998 251 20 X 251 20 JANSR2N2219JAN2N3998 JANSR2N2219 374 100 X 100 374 JANTX2N3998 2N3998 JANTX2N3998 2N3998 251 20 X 251 20 JAN2N2219A JAN2N2219A 374 100
2N5613 7 2N3918 il 2N4239 H 2N5083 19 2N5337 16 2N5614 16 2N3919 18 2N4240 1 2N5084 19 2N5338 16 2N5615 i7 2N3920 19 2N4306 15 2N5085 19 2N5339 16 2N5616 16 2N3928 15 2N4301 19 2N5147 7 2N5344 12 2N5617 W 2N3929 15 2N4305 1s 2N5148 16 2N5345 12 2NS5618 16 2N3996 15 2N4307 is 2N5149 17 2N5346 18 2N5619 17 JAN 2N3996 15 2N4309 15 2N5150 16 2N5348 18 2N5620 16 JTX 2N3996 15 2N4314 15 2N5151 20 2N5349 18 2N5621 20 JTXV 2N3996 15 2N4347 19 2N5152 19 2N5384 7 2N5622 19 2N3997 15 2N4348 19 2N5153 20 2N5385 7 2N5623 20 JAN 2N3997 15 2N4387 2 2N5154 19 2N5386 20 2N5624 9 JTX 2N3997 15 2N4388 12 2N5202 18 2N5404 17 2N5625 Ww JTXV 2N3997 15 2N4862 tl 2N5218 19 2N5405 17 2N5626 19 2N3998 15 2N4863 H 2N5237 19 2N5406 7 2N5627 20 JAN 2N3998 15 2N4864 HW JAN 2N5237 19 2N5407 7 2N5628 19 JTX 2N3098 1S. | 2N4877 i2 | JTX 2N3237. 39 | -2N5408 17 | 2N5632 19 ITXV 2N3998 15 2N4895 15 JTXV 2N5237 19 2N5406 7 2N5633 19 "2N3999 15 2N4896 13 2N5238 19 2N5410 17 2N5634 19 JAN 2N3999
RRENT = 5 AMPS NPN TYPESContinued VcBo | VcrO (sus) Device No} Case | Volts | Volts 2N3751 TO- 80 60 11/t 2N3752 TO- 100 80 111/1 2N3850 TO- 100 80 111 2N3851 TO- 100 80 111 2N3852 TOo- 60 40 111 2N3853 TO- 60 40 111 2N3928 TO-5 80 40 2N3929 TO- 80 40 111 2N3996 TO- 100 80 111A JAN TO- 100 80 2N3996 111/1 JTX TO- 100 80 2N3996 1A / STXV TO- 100 80 2N3996 111A 2N3997 TO- 100 380 111A JAN TO- 100 80 2N3997 111/1 JTX TO- 100 80 2N3997 111A JTXV TO- 100 80 2N3997 111A 2N3998 TO- 100 80 111 JAN TO- 100 80 2N3998 111 JTX TO- 100 80 2N3998 111 JITRV TO- 100 80 2N3998 111 2N3999 TO- 100 80 111 JAN TO- 100 80 2N3999 1il JTX TO- 100 80 2N3999 111 JTXV TO- 100 80 2N3999 111 2N4111 TO-3 100 60 2N4112 TO-3 100 60 2N4113 TO-3 120 80 2N4114 TO-3 120 80 2N4115 TO- 120 80 111/1 2N4116 TO- 120 80 111/1 2N4231 TO-66 40 40 2N4232 TO-66 60 60 2N4233 TO-66 80 380 2N4300 TO-5 100 80 2N4305 TO-5 120 80 2N4307 TO-5 100 60 2N4309 TO-5 120 80 2N4311 TO-5 100 60 2N4895 TO-5 120 60 2N48
2N3996 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * High-speed power switching * Power transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3996J) * JANTX level (2N3996JX) * JANTXV level (2N3996JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV * * * * * Radiation testing (total dose) upon request Hermetically sealed TO-x metal can Also available in chip configuration Chip geometry 9201 Reference document: MIL-PRF-19500/374 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 8 Volts IC 5 A 2 11.4
2N3996 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * High-speed power switching * Power transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3996J) * JANTX level (2N3996JX) * JANTXV level (2N3996JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV * * * * * Radiation testing (total dose) upon request Hermetically sealed TO-x metal can Also available in chip configuration Chip geometry 9201 Reference document: MIL-PRF-19500/374 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 8 Volts IC 5 A 2 11
576 2N3632 2N3680 2N37022N3716 2N37242N3725 2N3724A2N3725A 2N3733 2N37832N3792 2N37982N3799 2N38062N3811 2N38192N3824 2N3829 2N3833-2N3835 N3838 BN384G2N3B47 2N3 BN S003 2N3906 2N3909 2N39094 - 2N39622N3966 2N39702N3972 2N3980 2N39932N3994 2N3993A 7 aNoce 2N39962N401 SNaoae-oN404 1 2N40582N4062 2N40912N4093 2N4104 2N4138 2N4220--2N4222 2N4220A2N42228 2N4223--2N4224 2N42522N4253 2N43002N4301 2N43912N4393 2N43982N4399 2N4416 2N4416A 2N44182N4423 2N48512N4855 2N48562N4861 2N4856A2N48614 2N48742N4B76 2N48912N4894 2N49012N4906 2N4913--2N4915 2N49472N4949 2N49942N4997 2N50432N5047 2N50582N5059 2N52452N5248 2N5273-2N5275 2N53012N5303 2N53322N5333 C-1C-2 2N53842N5390 2N5399 2N54472N5451 2N55432N5549 2N59382N5940 2N5949--2N5953 343N35 3N1 3N2013N203 650C0-650C7 651 651C0-651C9 652C0652C9 653C0653C9 65409 655C9 A3TS18 A3T929 A3T930 AIT2221A3T2222 &3T22214-A3T22228 A3ZT2484 A3ZT2894 A3T2906~A3T 2907 ARTZO0GAAST 29078 A4T3015 DISCRETE SEMICONDUTORS AND COMPONENTS MANUFACTURED BY TEXAS INSTRUMENTS (Contd) AAT