686 N JFET 2N3686 3-8 5-6 2N2843 P JFET 2N2843 3-2 5-36 2N3687 N JFET 2N3687 3-8 5-6 2N2844 P JFET 2N2844 3-2 5-37 2N3819 N JFET 2N3819 4-1 5-25 2N3066 N JFET 2N4340 2N3820 P JFET J270 2N3067 N JFET 2N4338 2N3821 N JFET 2N3821 3-9 -25 2N3068 N JFET 2N4338 2N3822 N JFET 2N3822 3-9 5-25 2N3069 N JFET 2N4341 2N3823 N JFET 2N3823 3-10 5-25 2N3070 N JFET 2N4339 2N3824 N JFET 2N3824 3-11 5-25 1978 Siliconix incorporatedFET Cross Reference and Index (contd.) Ss Siliconix Industry Type and Recommended oan Geometry industry Type and Recommended ue, Geometry Part Number Classification Replacement Page Page Part Number Classification Replacement Page Page 2N3909 P JFET 2N3909 3-12 5-36 2N4340 N JFET 2N4340 3-24 5-19 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 3-24 5-19 2N3921 O'N JFET 2N3921 3-13 5-17 2N4352 P MOS ENH 3N163 2N3922 DN JFET 2N3922 3-13 5-17 2N4381 P JFET 2N2609 2N3954 DN JFET 2N3954 3-14 5-6 2N4382 P JFET 2N5115 2N3954A DN JFET 2N3954A 3-14 5-6 2N4391 N JFET 2N4391 3-26 5-3 2N3955
ted by 21 September 2004. INCH-POUND MIL-PRF-19500/375G 21 June 2004 SUPERSEDING MIL-PRF-19500/375F 19 March 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-72) and figure 2 (surface mount). * 1.3 Maximum ratings. Unless otherwise specified, TC = +25C. PT (1) TA = +25C 2N3821 2N3821UB VDG and VDS 2
. . POWER 2N3811. . . . . 4267 2N4033_ . 1... 4-305 2N3552 . .'. . . POWER 2N3819 . . . . . 4270 2N4068 ..... 4311 2N3654. 1. . 4-229 2N3820 .... . 4271 an4aos9 . . 2. . 4.314 2N3570 2 2... 4-233 2N3821... . . 4-272 2N4060 ..... 4311 2N3571 . . . . . 4233 2N3822...... 4272 2N4061 .. 2 2. 4311 2N3672 . 2... 4-233 2N3823.. 2 2. . 4272 2N4062. 2 2 2. 4314 2N3576 . . . . . 4-237 2N3824. 1... 4272 2N4091 .. 2. . 4313 2N3683 .... . POWER 2N3829. .. . . 4-278 2N4092 . . . . . 4.313 2N3684 .... . POWER 2N3838 . . . . . 4280 2N4093 . . 2 |. 4313 2N3585 .... . POWER 2N3846.. . . . . POWER 2N4104 2... . 4316 2N3634.. 2... 4-239 2N3847.. . . . . POWER 2N4123. 1... 4318 2N3635 . . 2. . 4-239 2N3902 . . . . . POWER 2N4124.... . . 4318 2N3636 2 2... 4-239 2N3903 . . . . . 4-283 2N4125 2... 4321 2N3637 . . . |. 4-239 2N3904 . . . . . 4-283 2N4126... . . 4321 2N3680 ..... 4248 2N3905 . .. . . 4-286 2N41388 .. . . . 4324 2N3702..... . 4250 2N3906 . . . . . 4-286 2N4220 ... . . 4326 2N3703 .... . 4250 2N3909 . .. .
2N3822 2N3823 MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Symbol 2N3821 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage VDS 50 30 V Drain-Gate Voltage VDG 50 30 V Parameters / Test Conditions Gate Current Power Dissipation TA = +25C (1) Operating Junction & Storage Temperature Range IGF 10 mA PT 300 mW Tj, Tstg -55 to + 200 C (1) Derate linearly 1.7mW/C for TA > +25C. TO-72 (TO-206AF) ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage 2N3821, 2N3822 VDS = 0, IG = 1.0A dc 2N3823 Gate Reverse Current VDS = 0, VGS = 30V dc VDS = 0, VGS = 20V dc 2N3821, 2N3822 2N3823 Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15V dc 2N3821 2N3822 2N3823 Gate-Source Voltage VDS = 15V dc, ID = 50A dc VDS = 15V dc, ID = 200A dc VDS = 15V dc, ID = 400A dc Symbol Min. V(BR)GSSR 50 30 IGSSR Max
2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation T A = +250C (1) Operating Junction & Storage Temperature Range VGSR VDS VDG IGF PT T j , T stg 2N3821 2N3822 2N3823 Unit 50 50 50 30 30 30 V V V mA mW 0 C 10 300 -55 to +200 TO-72* (TO-206AF) (1) Derate linearly 1.7 mW/0C for TA = +250C. *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 Adc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 20 Vdc Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15 Vdc Gate-Source Voltage VDS = 15 Vdc, ID = 50 Adc VDS = 15 Vdc, ID = 200 Adc VDS = 15 Vdc, ID = 400 Adc Gate-Source Cutoff Voltage VDS = 15 Vdc, ID = 0.5 Adc 2N3821, 2N3822 2N3823 V(BR)GSSR 2N3821, 2N3822 2N3823 IGSSR 2N3821 2N3822 2N3823 IDSS 2N3821
978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Symbol 2N3821, UB 2N3822, UB 2N3823, UB Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage VDS 50 30 V Drain-Gate Voltage VDG 50 30 V Gate Current IGF 10 mA Power Dissipation TA = +25C (1) Operating Junction & Storage Temperature Range PT 300 mW Tj, Tstg -55 to + 200 C Parameters / Test Conditions Unit Note: (1) Derate linearly 1.7mW/C for TA > +25C. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)GSSR 50 50 30 Max. Unit TO-72 (TO-206AF) OFF CHARACTERTICS Gate-Source Breakdown Voltage VDS = 0,
2N3822 2N3823 N-Channel, Depletion Mode Junction Field-Effect Transistors (JFETs) _ designed for small-signal, low-noise amplifier applications. MAXIMUM RATINGS 2N3821 Rating Symbol 2N3822 2N3823 Unit Drain-Gate Voltage Voc 50 30 Vde Orain-Source Voltage Vos 50 30 Vde Reverse Gate-Source Voitage VGsA -50 30 Vde Gate Current IGF 10 mAde Device Dissipation Pr 300 mW Derate above 25C 7 mwrc CASE 20-03 TO-206AF (TO-72) Storage Temperature Ranga Tsig -65 10 200 6 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max | Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage ViBR)GSSR Vde (Iq = -1.0 pAde, Vpg = 0) 2N821, 2N3822 $0 - 2N3823 30 _ Gate Reverse Current 'Gssr (V@g = -30 Vde, Vpg = 0) 2N3821. 2N3822 = 0.4 nAde (V@g = ~20 Vde, Vpg = 0} 2N3823 ~ 0.5 nAde (Vgg = ~30 Vde, Vpg = 0. Ta = 150C) 2N3821, 2N3822 _ se wAdc (Vqg = -20 Vdc. Vg = 0, Ta = 150C) 2N3823 ~ wade Gate-Source Cutot Voltage VGSiott) Vde (Vpg =
2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation TA = 250C (1) Operating Junction & Storage Temperature Range (1) Derate linearly 1.7 mW/0C for TA +25 0C. Symbol VGSR VDS VDG IG PT Tj, Tstg 2N3821 2N3822 50 50 50 2N3823 30 30 30 10 300 -55 to +200 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Gate-Source Breakdown Voltage V(BR)GSSR VDS = 0, IG = 1.0 Adc 2N3821, 2N3822 2N3823 Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 20 Vdc Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15 Vdc Gate-Source Voltage VDS = 15 Vdc, ID = 50 Adc VDS = 15 Vdc, ID = 200 Adc VDS = 15 Vdc, ID = 400 Adc Gate-Source Cutoff Voltage VDS = 15 Vdc, ID = 0.5 Adc 2N3821, 2N3822 2N3823 2N3821 2N3822
t No. Part No. Part No. Replacement No. Mfr. Replacement No. Mfr. Replacement No. Mir. Repiacement No. Mfr. Replacement No. Mfr. Replacement No. Mfr. W424 (Cont'd) U1181 (Cont'd) U1282 (Cond) U1321 U1422 (Cont'd) U1897E (Cont'd) MP5905, 3 MPS BFW13 3 PHIN 2N3822 1 MOTA 2N3966 1 IFC TP3822 3 SPR TMPFU1897 a SPR MP5908 3 MPS DE456 3 DGE 2N4341 a INL six Uui714 TPU1897 a SPR 423 a SIX THJ4220 3 SPR six 2N4221 1 MOTA 2N3459 1 IFC U1897J W425 TMPF4220 3 SPR BFW10 3 PHIN 2N4860 1 INL 2N4220A 1 MOTA MPF 4392 1 MOTA 2N5908 + INL TP4220 3 SPR BFW11 3 PHIN 2N4416 3 INL 2N4340 1 INL ITE4392 3 INL MP832 1 MPS | U1182 DE312 3 DGE BFW12 3 PHIN SIX PN4392 3 SIX 2N3955 3 INL 2N3821 1 INE DE459 3 DGE DE456 3 DGE 2N4220 3 INL PN4392-18 3 SIX NSC six THJ3458 3 SPR DE466 3 DGE 2N4339 3 INL u1898 SIx BFW1i3 3 PHIN THJ3822 3 SPR THJ3966 3 SPR 2N4341 3 SIX MPF4392 1 MOTA 2N3956 a NSC DE456 3 DGE THJ4941 3 SPR THJ4221 a SPR BFwi2 3 PHIN THJU1898 1 SPR SIX THJ3821 3 SPR TMPF3458 3 SPR THJ4860 a SPR BFW13 3 PHIN TMPFU1898
6.0 | 4.0 2n3797 | N | 10-4 2.0 | 6.0 | oloa1| 20 {| osx | 1500 | 3000 | 8.0 | 4.0 2N3819 | N 2.0 20 2.0] 25 | ess | 2000 | 6500 | 8.0 2N3820 | P 0.3 15 20; 20 | Gss 800 | 5000 | 32 2N3821 |N | 10-8 0.5 | 2.5 0.1] 50 | ess | 1500 | 4500 | 6.0 | 5.0 10 4H 2N3822 | N } 10-8 2.0 | 10 0.1] 50 | Gss | 3000 } 6500 | 6.0 | 5.0 10 4H 2N3823 |N | 10-10 | 4.0 20 0.5] 30 | pcs | 3500 | 6500 | 6.0 | 2.5 100 M 2n3824 |N | 10-8 0.11 50 | Gss 6.0 2n3882 | P 0.25 0.1) 30 | DS rooo | 2400 | 4.0 | 3.0 2n3909 | P 0.3 15 io| 20 | pes | 1000 | 5000 | 32 2N3921 | N 1.0 10 0.25] 50 |ss | 1500 | 7500 | 18 | 2.0 1.0 K} Dual 2N3922 | N 1.0 10 0:25| 50 | ess | 1500 | 7500 | 18 | 2.0 1.0 K| Dual 2N3934 | N 0.25 | 1.3 0.1] 50 | Gss 300 900 | 7.0 | 2.0 100 Hj] Dual 2N3935 | N 0.25 | 1.3 0.1{ 50 | ess 300 900 | 7.0 | 2.0 100 H]} Dual 2N3954 | N 0.5 | 5.0 0.1) 50 | Gss } 1000 4.0 ) 0.5 100 H]} Dual 2N3955 | WN 0.5 | 5.0 0.1/ 50 | Gss | 1000 4.0 | 0.5 100 #| Dual 2n3956 | N 0.5 | 5.0 0.1] 50 | Gss | 1000 4.0 | 0.5 100 H]| Duai
2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation TA = +250C (1) Operating Junction & Storage Temperature Range (1) Derate linearly 1.7 mW/0C for TA +25 0 VGSR VDS VDG IGF PT Tj, Tstg 2N3821 2N3822 2N3823 Unit 50 50 50 30 30 30 V V V mA mW 0 C 10 300 -55 to +200 TO-72* (TO-206AF) C. *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 Adc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 20 Vdc Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15 Vdc Gate-Source Voltage VDS = 15 Vdc, ID = 50 Adc VDS = 15 Vdc, ID = 200 Adc VDS = 15 Vdc, ID = 400 Adc Gate-Source Cutoff Voltage VDS = 15 Vdc, ID = 0.5 Adc 2N3821, 2N3822 2N3823 V(BR)GSSR 2N3821, 2N3822 2N3823 IGSSR 2N3821 2N3822 2N3823 IDSS 2N3821
2N3822 2N3823 MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Symbol 2N3821 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage VDS 50 30 V Drain-Gate Voltage VDG 50 30 V Parameters / Test Conditions Gate Current Power Dissipation TA = +25C (1) Operating Junction & Storage Temperature Range IGF 10 mA PT 300 mW Tj, Tstg -55 to + 200 C (1) Derate linearly 1.7mW/C for TA > +25C. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage 2N3821, 2N3822 VDS = 0, IG = 1.0A dc 2N3823 Gate Reverse Current VDS = 0, VGS = 30V dc VDS = 0, VGS = 20V dc 2N3821, 2N3822 2N3823 Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15V dc 2N3821 2N3822 2N3823 Gate-Source Voltage VDS = 15V dc, ID = 50A dc VDS = 15V dc, ID = 200A dc VDS = 15V dc, ID = 400A dc Symbol Min. V(BR)GSSR 50 30 IGSSR Max. Unit Vdc 0.1 0.
te-Source Voltage Ves -60 Vde 4 Drain Current Ip 10 mAdc JFETs Tota! Device Dissipation @ Ta = 26C Pp 300 mw LOW FREQUENCY, LOW NOISE Derate above 25C 2.0 mwrc : : - z N-CHANNEL - DEPLETION Junction Temperature Range Lv) 175 c JAN, JTX 2N3821 AND JAN, JTX 2N3822 Storage Temperature Range Tstg ~65 to +200 C AVAILABLE Refer to 2N4220 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) f Characteristic | Symbol! { Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage V(BRIGSS 50 _ Vde (ig = -1.0 pAdc, Vps = 0) Gate Reverse Current Iess nAdc (Vgs = ~30 Vde, Vpg = 0) _ -0.1 (Vgs = 30 Vde, Vps = 0, Ta = 150C) _- - 100 Gate Source Cutoff Voltage V@S{off) Vde f {Ip = 0.5 nAdc, Vps = 15 Vdc) 2N3821 _ -4.0 2N3822 - 6.0 Gate Source Voltage Ves Vde (Ip = 50 pAde, Vpg = 15 Vde) 2N3821 -0.5 -2.0 (Ip = 200 pAdc, Vpg = 15 Vde} 2N3822 =1.0 4.0 Drain Cutoff Current ID(off) nAdc (Vps = 15 Vdc, Vag = ~8.0 Vde) 2N3824 - 0.1 ps = 15 Vde, Vgg = 8.0 Vde, Ta = 150C
2N2643 4405 2N2920 4409 2N2977 4409 2N2979 4409 2N3350 4507 2N3680 4509 2N3838 4517 2N4854 4701 SILICON FIELD-EFFECT TRANSISTGRS TIS58 6091 TIS59 6091 TIS73 6103 TIS74 6103 TIS75 6103 3N160 6201 2N2386 6301 2N2498 6303 2N3330 6305 2N3819 6401 2N3820 6403 2N3822 6405 2N3823 6407 2N3909 6413 2N3993A 6501 2N4416 6503 2N4857 6511 2N5G45 6601 2N398 9101 2N404 9105 2N 1302 9205 2N1303 9205 2N1304 9205 2N1305 9205 2N1306 9205 2N1307 9205 2N1308 9205 2N1309 9205 2N1377 9213 2N1997 9301 2N2000 9307 GERMANIUM MESA AND PLANAR SWITCHING TRANSISTORS 2N797 12101 2N964 12105 2N2635 12301 GERMANIUM UHF/ MICROWAVE TRANSISTORS 2N5043 14401 SILICON POWER TRANSISTORS TIP294,B,C 16101 TIP30A,B,C 16105 TIP31A,B,C 16109 TIP32A,B,C 16113 TIP334,B,C 16117 TIP34A,B,C 16121 TIP35A4,B,C 16125 TIP36A,B,C 16129 2N1724 16301 TIP3055 2N2987 16401* 2N2988 16401 2N2989 16401 2N2990 16401 2N2991 16401 2N2992 16401 2N2993 16401 2N2994 16401 2N3418 16501 2N3419 16501 2N3420 16501 2N3421 16501 2N3551 16507 2N3552 16507 2N3713 16511
2N3822 U406 2N5196 TP4 126 2N4 126 U221 2N4857 U421 2N4082 TP4257 PN4258 U222 2N4856 U422 2N4082 TP4258 PN4258 U231 2N5 196 U423 2N4082 TP4&274 PN4&274 U232 2N5 196 U4s24 2N4082 TP&275 PN&275 U233 2N5196 U425 2N4082 TP5114 2N5 114 U234 2N5196 U426 2N4082 TP5115 2N5115 U235 2N5196 u430 2N5911 TP5116 2N5116 U240 2N4856 U431 2N5911 TQ59 CT760 U241 2N4856 U1177 2N4220A TQ60 CT760 U2k2 2N4856 U1178 2N3821 TQ61 CT762 U243 2N4856 u1179 2N3821 TQe2 CT762 U264 2N4856 u1180 2N4221A TQ63 CT764 U246 2N5902 u1181 2N4 220A TQ64 CT764 U249 2N5903 u1182 2N3821 TRS1204 D4&4R1 U250 2N5904 U1277 2N3822 TRS 1205 D4&4R1 U251 2N5905 U1278 2N3821 TRS1404 D4&&R4 u252 2N5911 u1279 2N4339 TRS1405 D4&4R1 U253 2N5912 ut280 2N3822 TRS 1604 D4&4&R1 254 2N4859 U1281 2N3966 TRS 1405 D44R1 U255 2N4860 U1282 2N3824 TRS 1804 D4&4R1 U256 2N4861 U1283 2N3966 TRS1805 D44R1 257 2N5911 U1284 2N4 393 TRS2004 D4&4R1 U266 2N4856 U1285 2N4 338 TRS2005 Db4aR1 U273 2N3821 U1286 2N3821 TRS2006 D44R2 U274 2N3821 U1287