ess conversion measures necessary to comply with this document shall be completed by 17 August 2016. MIL-PRF-19500/291W 17 May 2016 SUPERSEDING MIL-PRF-19500/291V 16 October 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2907A, JAN, JANTX, JANTXV, JANS, JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance(JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, an
cessary to comply with this document shall be completed by 16 January 2015. MIL-PRF-19500/291V 16 October 2014 SUPERSEDING MIL-PRF-19500/291U 16 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performan
ument shall be completed by 9 May 2010. INCH-POUND MIL-PRF-19500/291R w/AMENDMENT 2 9 February 2010 SUPERSEDING MIL-PRF-19500/291R w/AMENDMENT 1 20 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, AND 2N2907AUBC, JAN, JANTX, JANTXV, JANJ, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCB, JANHCD JANKCB, JANKCD JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsul
2019 SUPERSEDING MIL-PRF-19500/291W 17 May 2016 The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 July 2019. PERFORMANCE SPECIFICATION SHEET TRANSISTOR, PNP, SILICON, SWITCHING, DEVICE TYPES 2N2906A AND 2N2907A, ENCAPSULATED (THROUGH HOLE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated de
cessary to comply with this document shall be completed by 16 January 2015. MIL-PRF-19500/291V 16 October 2014 SUPERSEDING MIL-PRF-19500/291U 16 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performan
Hz PNP 60V 0.6A 40 120 10/0.15 200MHz Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack 2N2368AQF Quad Transistor 2N2369AQF Quad Transistor 2N2857QF Quad Transistor 2N2894AQF Quad Transistor 2N2906AQF Quad Transistor 2N2907AQCSM Quad Transistor LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQF Quad Transistor Quad Ceramic Flat PNP Pack 60V 0.6A 100 300 10/0.15 200MHz LCC20 PNP 60V 0.6A 100 300 10/0.15 200MHz LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQLCC20 2N2907EX8CSM Quad Transistor 8 Transistor Array 1.9GHz 2N3209AQF Quad Transistor 2N3251AQF Quad Transistor 2N7334 2N7335 Quad MOSFET Quad MOSFET 2N7336 Array 2N918AQF Quad Transistor BC107QF Quad Transistor BC108QF Quad Transistor BC109QF Quad Transistor BC477QF Quad Transistor BC478QF Quad Transistor BC479QF Quad Transistor BCY58QF Quad Transistor BCY59QF Quad Transistor BCY70QF Quad Transistor BCY71QF Quad Transistor BCY72QF Quad Transistor BFX46QF Quad Transistor BFX48QF
19AL 290 20 20 JANS2N2905AL JANS2N2905AL 251 20 X 251 20 JANSR2N2219AL JANSR2N2219AL 290 20 X 290 20 JANSR2N2905AL JANSR2N2905AL 255 20 X 290 255 20 JAN2N2222A JANSF2N2905AL JAN2N2222A 290 JANSF2N2905AL 255 20 X 291 255 20 291 JANTX2N2222A JANTX2N2222A JAN2N2906A JAN2N2906A 291 255 20 X 291 255 20 JANTX2N2906A JANTXV2N2222A JANTXV2N2222A 2N2222A JANTX2N2906A 291 291 255 20 X 255 20 JANTXV2N2906A JANTXV2N2906A JANS2N2222A 2N2906A JANS2N2222A 291 291 20 X 20 JANS2N2906A JANS2N2906A 255 20 X 255 20 JANSR2N2222A JANSR2N2222A Bipolar Transistors 2N2219AL PART NUMBER 2N720A 2N2222A 2N918 2N2369A 2N930 2N2484 2N1893 2N2605 2N1893S 2N2060 2N2857 2N2218 2N2904 2N2218A 2N2904A 2N2218AL 2N2904AL 2N2219 2N2905 2N2219A 2N2905A 2N2219AL 2N2905AL 2N2222A 2N2906A 20 X 20- - TO-39 TO-39 NPN - NPN 50 - 75 50 6 75 0.8 6 0.8 0.8 195 0.8 195 -65 to +200 -65 to +200 325 0.3 325 0.3 20 X 20- - TO-39 TO-3
necessary to comply with this revision shall be completed by 1 October 2002. INCH-POUND MIL-PRF-19500/291K 1 July 2002 SUPERSEDING MIL-PRF-19500/291J 5 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA 2N2907AUA, 2N2906AUB, AND 2N2907AUB JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC This Specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. * 1.2 Physical dimensions. See figure 1 (similar to a T0-18), figures 2 and 3 (surface mount case outlines UA and UB), and figures 4 and 5 (JANHC and JANKC). 1.3 Maximum
2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current V
2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current V
2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM - 3K Rads (Si) JANSD - 10K Rads (Si) JANSP - 30K Rads (Si) JANSL - 50K Rads (Si) JANSR - 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc 0.5 W Top, Tstg -65 to +200 C Symbol Max. Unit RJA (1) 325 C/W Collector Current Total Power Dissipation @ TA = +25C PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient 4 PIN 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF
2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and 2N2905A) and in Jedec TO-18 (for 2N2906A and 2N2907A) metal cases. They are designed for high-speed saturated switch- ing and general purpose applications. 2N2904A/2N2905A approved to CECC 50002-100, 2N2906A/2N2807A approved to CECC 50002103 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM Cc B PNP E 5 6096 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vcso Collector-base Voltage (I~ = 0) - 60 V VcEo Collector-emitter Voltage (Ig = 0) 60 Vv VeBo Emitter-base Voltage (I = 0) -5 Vv lc Collector Current 600 mA Piot Total Power Dissipation at Tamy < 25 C for 2N2904A4 and 2N2905A 0.6 Ww for 2N2906A and 2N2907A 0.4 Ww at Tease < 25 C for 2N2904A4 and 2N2905A 3 WwW for 2N2906A and 2N2907A 1.8 WwW Tstg, Tj Storage and Junction Temperature
2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current V
2N2906A 2N2907A } General Description These devices are PNP, silicon, low-power triode transistors designed primarily for high speed, saturated switching and driver applications for industrial service. LI Mechanical Data A. Outline TO-18 B. Terminal Designations Terminal Element 1 * Emitter 2 Base 3 Collector Collector internally connected to case C. Handling Precautions - None D. Mounting Positions - Any Lit. Maximum Ratings A. Temperature r 1s Storage temperature, Fee -65 to +200 C 2. Lead Temperature 1/16" from case for 10 sec | 230 Cc B. Reverse Ratings ~base \ . Le Collector-base | cro 6G Vac Imi ws ye uy ' a Vee 25 Emi ttar+base VERO Vee Js Collctor-amiiter Voro - 60 Yee Applicabie 0 to i100 mATVs o : . ne o Electric Characteristics, 25 C Free Air Temperature Unless Current Ls Power BOWEL Ls BDC collector current : Total device dissipation at 25C Case temperature Py 2N2504A, 2N2905A ~ TO-5 Derating factor above 25C 2N2906A, 2N2907A - TO-18 Derating factor above 25 C Total devic
2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM - 3K Rads (Si) JANSD - 10K Rads (Si) JANSP - 30K Rads (Si) JANSL - 50K Rads (Si) JANSR - 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc 0.5 W Top, Tstg -65 to +200 C Symbol Max. Unit RJA (1) 325 C/W Collector Current Total Power Dissipation @ TA = +25C PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient 4 PIN 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF