2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature Copyright 2010 Rev. K SEMICOA Corporation 333 McCorm
2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature Copyright 2002 Rev. K Semicoa Semiconductors, Inc. 3
2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature Copyright 2010 Rev. K Semicoa Corporation 333 McCorm