2060 2N2060 2N2060 270 JANTXV2N2060 JANTXV2N2060 251 JAN2N2218 JAN2N2218 251 2N2218 2N2218 JANTX2N2218 JANTX2N2218 251 JANTXV2N2218 JANTXV2N2218 251 JAN2N2218A JAN2N2218A 251 2N2218A JANTX2N2218A 2N2218A JANTX2N2218A 251 JANTXV2N2218A JANTXV2N2218A 251 JAN2N2218ALJAN2N2218AL 251 2N2218AL JANTX2N2218AL 2N2218AL JANTX2N2218AL 251 JANTXV2N2218AL JANTXV2N2218AL 251 JAN2N2219 JAN2N2219 251 JANTX2N2219JANTX2N2219 251 2N2219 2N2219 JANTXV2N2219 JANTXV2N2219 251 JANS2N2219 JANS2N2219 251 JANSR2N2219JANSR2N2219 251 JAN2N2219A JAN2N2219A 251 JANTX2N2219A JANTX2N2219A 2N2219A 2N2219A 251 JANTXV2N2219A JANTXV2N2219A 251 JANS2N2219AJANS2N2219A 251 JANSR2N2219A JANSR2N2219A 251 JAN2N2219ALJAN2N2219AL 251 JANTX2N2219AL JANTX2N2219AL 251 2N2219AL JANTXV2219AL 2N2219AL JANTXV2219AL 251 JANS2N2219AL JANS2N2219AL 251 JANSR2N2219AL JANSR2N2219AL 255 JAN2N2222A JAN2N2222A 255 JANTX2N2222A JANTX2N2222A 255 2N2222A JANTXV2N2222A 2N2222A JANTXV2N2222A 255 JANS2N2222AJANS2N2222A 255 JANSR2N2222A JANSR2N2222A Slash Die-Si
2N2218ALJ) * JANTX level (2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature
2N2218ALJ) * JANTX level (2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature
2N2218ALJ) * JANTX level (2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 50 Collector-Base Voltage VCBO 75 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 800 mA Power Dissipation, TA = 25OC Derate above 25OC PT 0.8 4.6 Power Dissipation, TC = 25OC Derate above 25OC PT 3.0 17.0 W mW/C W mW/C Operating Junction Temperature TJ -55 to +200 C TSTG -55 to +200 C Storage Temperature