1893 2N1893 2N1893 182 JANTXV2N1893 JANTXV2N1893 182 JAN2N1893S JAN2N1893S 182 2N1893S JANTX2N1893S 2N1893S JANTX2N1893S 182 JANTXV2N1893S JANTXV2N1893S 270 JAN2N2060 JAN2N2060 270 JANTX2N2060 JANTX2N2060 2N2060 2N2060 270 JANTXV2N2060 JANTXV2N2060 251 JAN2N2218 JAN2N2218 251 2N2218 2N2218 JANTX2N2218 JANTX2N2218 251 JANTXV2N2218 JANTXV2N2218 251 JAN2N2218A JAN2N2218A 251 2N2218A JANTX2N2218A 2N2218A JANTX2N2218A 251 JANTXV2N2218A JANTXV2N2218A 251 JAN2N2218ALJAN2N2218AL 251 2N2218AL JANTX2N2218AL 2N2218AL JANTX2N2218AL 251 JANTXV2N2218AL JANTXV2N2218AL 251 JAN2N2219 JAN2N2219 251 JANTX2N2219JANTX2N2219 251 2N2219 2N2219 JANTXV2N2219 JANTXV2N2219 251 JANS2N2219 JANS2N2219 251 JANSR2N2219JANSR2N2219 251
ess conversion measures necessary to comply with this document shall be completed by 25 September 2015. MIL-PRF-19500/251T 25 June 2015 SUPERSEDING MIL-PRF-19500/251R 12 May 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MILPRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package outlines. The device packages for the encapsulated device types are as
gn Engineers, First Edition (CC-404). TYPE NO. 2N1721 2N1722 2N1722A 2N1723 2N1724 2N1724A 2N 1725 2N1889 2N1890 2N 1893 2N1936 2N 1937 2N1973 2N1974 2N1975 2N2060 2N2102 . 2N2102A 2N2150 2N2151 2N2160 2N2192 2N2192A 2N2193 2N2193A 2N2194 2N2194A 2N2217 . 2N2218 2N2218A 2N2219 2N2219A 2N2220 . . 2N2221 2N2221A 2N2222 2N2222A 2N2223 2N2223A 2N2243 2N2243A 2N2270 2N2303 2N2386 2N2386A 2N2387 2N2388 2N2389 2N2390 2N2393 SEC.-PAGE POWER POWER POWER POWER POWER POWER POWER 477 477 4-77 POWER POWER 4-79 4-79 4-79 4-31 4-83 4-83 POWER POWER 4-86 4-88 4-88 4-88 4-88 4-88 4-88 4-93 4-93 4-93 4-93 493 4-93 4-93 4.93 4-93 4-93 4-105 4-105 4-107 4-107 4-112 4-114 4-116 4-116 4-117 4-117 4-119 4-119 4-121 TEXAS INSTRU NCORPORATE POST OFFICE BOX 5012 + DALLA! MENTS $, TEXAS 75222TYPE NUMBER INDEX TYPE NO. 2N2394 2N2395 2N2396 2N2432 2N2432A 2N2453 2N2483 2N2484 2N2497 2N2498 2N2499 2N2500 2N2537 2N2538 2N2539 2N2540 2N2586 2N2604 2N2605 2N2608 2N2609 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N264
2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM 2N1893X 2N2060 2N2060A 2N2060ADCSM 2N2060DCSM 2N2102 2N2102L 2N2192 2N2192A 2N2192AL 2N2192L 2N2194 2N2194A 2N2197 2N2197-TO39 2N2218 PRODUCT BCY78CSM BCY78DCSM BCY79 BCY79A BCY79B Status Polarity Package NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) PNP TO5 (TO205AA) PNP TO39 (TO205AD) PNP LCC1 PNP LCC2 (MO-041BB) NPN TO61 (TO210AC) NPN TO61 (TO210AC) TO5 (TO205AA) NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO39 (TO205AD) NPN TO5 (TO205AA) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO5Thermoslug NPN TO53 NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN LCC1 NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN LCC2 (MO-041BB) NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO5 (TO205AA) NPN
ess conversion measures necessary to comply with this document shall be completed by 25 September 2015. MIL-PRF-19500/251T 25 June 2015 SUPERSEDING MIL-PRF-19500/251R 12 May 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MILPRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package outlines. The device packages for the encapsulated device types are as
asures necessary to comply with this document shall be completed by 12 August 2010. MIL-PRF-19500/251R 12 May 2010 SUPERSEDING MIL-PRF-19500/251P 7 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, AND 2N2219AL, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, and JANSH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirem
8 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also available in Radiation Hardened versions. JAN JANTX JANTXV JANS * See datasheet for JANSR2N2218 & JANSR2N2219 ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Collector-Emitter Voltage VCEO 2N2218 2N2219 30 Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage VEBO 5.0 6.0 Vdc Parameters / Test Conditions Collector Current Symbol IC @ TA = +25C @ TC = +25C Operating & Storage Junction Temp. Range Total Power Dissipation 2N221A; L 2N2219A; L 50 Unit Vdc Top, Tstg 800 0.8 3.0 -55 to +200 mA W W C Symbol Value Unit RJC 59 C/W PT THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case TO-39 (TO-
2N2218, 2N2218A JAN, JTX, JTXV 2N2218AL JAN, JTX, JTXV 2N2219, 2N2219A JAN, JTX, JTXV 2N2219AL JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/251 NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range Symbol 2N2218 2N2219 2N2218A; L 2N2219A; L Unit VCEO VCBO VEBO IC PT 30 60 5.0 50 75 6.0 800 Vdc Vdc Vdc mAdc 0.8 3.0 -65 to +200 W W 0 C TJ, Tstg 2N2218, 2N2218A 2N2219, 2N2219A TO- 39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, RJC Junction-to-Case 0 1) Derate linearly 4.6 mW/ C for TA > +250C 2) Derate linearly 17.0 mW/0C for TC > +250C Max. 0.059 Unit C/mW 0 2N2218AL, 2N2219AL TO-5 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Mi
2N2218, A, AL JAN, JTX, JTXV, JANS 2N2219, A, AL JAN, JTX, JTXV, JANS QML DEVICES Processed per MIL-PRF-19500/251 NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation 2N2218 2N2219 2N2218A; AL 2N2219A; AL 30 60 5.0 50 75 6.0 VCEO VCBO VEBO IC @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temp. Range PT Top, Tstg 800 0.8 3.0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C 2N2218, 2N2218A 2N2219, 2N2219A TO- 39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 Symbol 0 RJC Max. 59 Unit C/mW 0 1) Derate linearly 4.6 mW/ C for TA > +25 C 2) Derate linearly 17.0 mW/0C for TC > +250C 2N2218AL, 2N2219AL TO-5 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit 2N2218, 2N2219 2N2218A, AL, 2N2219A, V(BR)CEO 30 50 2N2218, 2
t versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N301
0.8 2.0A 5.0K [5 2N2212 G|P HPA 100wW fc {110 |120 120 R 50 |120 5.0A 1.0 5.0A 30 JE 10.45M JT 2N2214 SIN HSS | 0.25W |C |150 25 15 0 25 10M 0.2 1OM 200M {T 2N2216 S | P | 2N3498 8-232 | HSA 3.0W |C |200 4150 100 0 25 4120 50M 5.0 50M 50M |T 2N2217 S |N | 2N2218 8-108 | HSA O.8W JA [175 60 30 0 20 60 150M 0.4 150M 250M | T 2N2218 SN 8-108 | HSA 0.8W 7A 1175 60 30 oO 40 |120 150M 0.4 150M 250M |T 2N2218A |S |N 8-114 | HSS | 0.8W JA ]175 | 75 40 |O | 40 |120 70.154 0.3 {0.154 30 |E } 250M |T 2N2219 S|N 8-108 | HSA O.8W TA 1175 60 30 O 4100 | 300 150M 0.4 150M 250M |T 2N2219A |S [N 8-114 | HSS 0.8Ww }A [175 75 40 O j100 ;200 10.154 0.3 [O.15A 50 /E 300M |T 2N2220 S |N | 2N2222 8-108 | HSA O.5W |A [175 60 30 0 20 60 150M 9.4 150M 250M |T 2N2221 Ss |N 8-108 | HSA O.5wWw |A [175 60 30 oO 40 $120 150M 0.4 150M 250M |T 2N2221A [S| N 8-114 } HSS O.5W JA 7175 75 40 oO 40 }120 |0.15A 0.3 [0.154 30 JE 250M |T 2N2222 S|N 8-108 | HSA 0.5W YA 1175 60 30 oO |100 | 300 150M 0.4 150M 250M
2N2218 2N2218A 2N2218AL Qualified Level JAN JANTX JANTXV JANS 2N2219 2N2219A 2N2219AL MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temp. Range VCEO VCBO VEBO IC 2N2218 2N2219 2N2218A; L 2N2219A; L 30 60 5.0 50 75 6.0 PT Top, Tstg 800 0.8 3.0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C TO- 39* (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly 4.6 mW/0C above TA > +250C 2) Derate linearly 17.0 mW/0C above TC > +250C Max. 59 Unit C/W 0 TO-5* 2N2218AL, 2N2219AL *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 30 50 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Vo
2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also available in Radiation Hardened versions. JAN JANTX JANTXV JANS * See datasheet for JANSR2N2218 & JANSR2N2219 ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2219 2N221A; L 2N2219A; L Unit Collector-Emitter Voltage VCEO 30 50 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage VEBO 5.0 6.0 Vdc Collector Current Total Power Dissipation @ TA = +25C @ TC = +25C Operating & Storage Junction Temp. Range IC 800 mA PT 0.8 3.0 W W Top, Tstg -55 to +200 C Symbol Value Unit RJC 59 C/W THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1) Derate linearly 4.6mW/C above TA > +25C (2) Derate linearly 17.0mW/C above TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symb
8 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also available in Radiation Hardened versions. JAN JANTX JANTXV JANS * See datasheet for JANSR2N2218 & JANSR2N2219 ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Collector-Emitter Voltage VCEO 2N2218 2N2219 30 Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage VEBO 5.0 6.0 Vdc Parameters / Test Conditions Collector Current Symbol IC @ TA = +25C @ TC = +25C Operating & Storage Junction Temp. Range Total Power Dissipation 2N221A; L 2N2219A; L 50 Unit Vdc Top, Tstg 800 0.8 3.0 -55 to +200 mA W W C Symbol Value Unit RJC 59 C/W PT THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case TO-39 (TO-
2N2218A - 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2218A and 2N2219A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications, And feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25 PD Total Power Dissipation @ Tcase= 25 TJ Junction Temperature TStg Storage Temperature range 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A Value Unit 40 V 75 V 6 V 800 mA 0.8 Watts 3 Watts 175 C -65 to +200 C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in f