s. POWER- Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404). TYPE NO. 2N1721 2N1722 2N1722A 2N1723 2N1724 2N1724A 2N 1725 2N1889 2N1890 2N 1893 2N1936 2N 1937 2N1973 2N1974 2N1975 2N2060 2N2102 . 2N2102A 2N2150 2N2151 2N2160 2N2192 2N2192A 2N2193 2N2193A 2N2194 2N2194A 2N2217 . 2N2218 2N2218A 2N2219 2N2219A 2N2220 . . 2N2221 2N2221A 2N2222 2N2222A 2N2223 2N2223A 2N2243 2N2243A 2N2270 2N2303 2N2386 2N2386A 2N2387 2N2388 2N2389 2N2390 2N2393 SEC.-PAGE POWER POWER POWER POWER POWER POWER POWER 477 477 4-77 POWER POWER 4-79 4-79 4-79 4-31 4-83 4-83 POWER POWER 4-86 4-88 4-88 4-88 4-88 4-88 4-88 4-93 4-93 4-93 4-93 493 4-93 4-93 4.93 4-93 4-93 4-105 4-105 4-107 4-107 4-112 4-114 4-116 4-116 4-117 4-117 4-119 4-119 4-121 TEXAS INSTRU NCORPORATE POST OFFICE BOX 5012 + DALLA! MENTS $, TEXAS 75222TYPE NUMBER INDEX TYPE NO. 2N2394 2N2395 2N2396 2N2432 2N2432A 2N2453 2N2483 2N2484 2N2497 2N2498 2N2499 2N2500 2N2537 2N2538 2N2539 2N2540 2N2586 2N2604 2N2605 2N2608 2N2609
2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS SULLETIN NO. DL'S 683189, OCTOBER 1962-REVISED MAY 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Current Capabilities Simplified Circuit Design mechanical data Package outline similar to JEDEC TO-5S except for lead position. Approximate weight 1 gram. * ALL LEADS INSULATED FROM CASE. NOTES A. This zone 1s controlled for auto- matic handling The vatiation in 0.769 ws 150 in| MIN actual diameter within this zone shall a a. | . not exceed 0 O10 e| cee pe 6 Measured from max. diameter of t Tp kee the actual device 0.370 (0.335 210 cm 0.1 \ C. The specified lead diameter ap- 4 LR * plies in the zone between 0 050 and 0 250 from the base seat Between L281 is ede Nate 0 250 and 1.5 maximum of 0.021 diam- eter is held Outside of these zones the lead diameter is not controlled. DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED *absolute m
o back. SILICON CONTROLLED SWITCH (SCS)high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression. APPLICATIONS Unijunctions . Device Triggers Conventional Complementary Programmable 2N489-94, 2N2646 DSK1 2N6027 sus SBS 2N1671, 2N2160 2N2647 DSK2 2N6028 2N4983-90 2N4991-93 DC, Lo Cost F E E DC, Hi Perf. E DC, Volt Regulator F E E: E 1 E DC, Inverter DC, Hi AI/AT AC, @, Hi Perf. AC, , Hit AC, Lo RFI AC, , Lo Cost Trigger for SCRs nm >1 hr. F P F P F F P F P >1 min, Lo Cost F >1 min, Stable P <1 min, Lo Cost F <1 min, Stable P <10 P 10-25V E >25v P Stability F Cost F Adjust, Range E Military P Hi-Rel P F ajml al mi mim] ole] ol mae ain wlan] = F E F P F P E N N N F N N F F N N N Pp F E Economy rm E = Excellent, F Fair, P = Poor, N = Not Applicable With additional circuitry 2 Hermetic version 2N6116-18 123 VUUAUUAUNAU UATE CONVENTIONAL UNISUNCTIONS General Electric produces a very broad line of standard UJTs. The TO-5 ceramic disc bar structure device has been the workhor
te 0.250 and 1 5 maximum of 0.021 diam- [ eter is held. Outside of these zones | the lead diameter is not controled I DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED *absolute maximum ratings at 25C free-air temperature (unless otherwise noted) 2N1671 2N2160 2N1671A 2N1671B Emitter-Base Reverse Voltage. . toe ee ee ew TOG Emitter-Base Reverse Voltage below 140C Junction Temperature soe ee ee -%v Interbase Voltage 2... ww kw ee ee ee ee we) 8 35 v RMS Emitter Current. . 2 2 1. ee ee ee ee ee ey) 6 5m DC Emitter Current . . Be ee ek ke kk 70 ma Peok Emitter Current (See Note 1). oo Foe ee ee ee 2a Peak Emitter Current below 140C Junction Temperature toe 2a Total Device Dissipation at (or below) 25C Free-Air Temperature (See Notes 2 & "3) 450 mw 450 mw Operating Temperature Range (See Note 3). . . . . . 65C te 140C Storage Temperature Range (See Note 4). . . . 2. 2. 1. wwe ee ws = 65C to 150C Lead Temperature % Inch from Case for 10 Seconds . . . . . . . . . . . 62608 260C WOTES: 1. Capacitor di
2N2160 4,0-12,0 8 2N2646-MET 4,7-9,1 4 2N2647-MET 4,7-9,1 8 2N6027 2N6028 U(ba) . . [] 40 40 I(a) . a [A] 150 150 I(p) max . [A] 25 5 2 I(v)min @ Rg=10 [A] 70 25 V(OB1)min Pmax . Mo 1 [] 3 3 6 [] 0,3 0,3 0,3 V(output)min Pmax [] 6 6 [] 0,35 0,35 TO5 TO18 TO18 TO92 TO92 A Z 2N2160 2N6027 2N2646-MET . - .
5.0A 0.1} 5.04 2.0K JE 2N2158A |G] P 7-82 LPA 170W | C | 110 75 60 0 80 | 160 5.0A 0.1 5.0A 2.0K 1E 2N2159 Gy] P 7-82 LPA 170W | Cc | 110 90 90 $ 80 | 160 5.0A 0.1 5.04 2.0K |E 2N2159A | G] P 7-82 LPA 170W | c | 110 90 65 QO 80 | 160 5.0A 0.1 5.0A 2.0K }E 2N2160 Unijunction Transistor, see Table on Page 1-174 2N2161 S[N HSS 200M | A | 150 55 35 0 60 | 160 10M 1.5 10M 75 /E 2N2162 S| P CHP 150M} Aj 140 30 30 0 14M | T 2N2163 S| P CHP 150M | A | 140 15 15 0 14M | T 2N2164 S|P CHP 150M | A | 140 12 8.0 0 24M | T 2N2165 S| P CHP 150M | A | 140 30 30 0 1OM | T 2N2166 S|P CHP 150M | A | 140 15 15 0 10M | T 2N2167 S| P CHP 150M | A | 140 12 8.0 0 16M | T 2N2168 Gy P HSS 60M | A | 100 20 15 0 50 10M }0.225 10M 2N2169 GyYP HSS 60M | A | 100 45 US 9 40 10M Q.15 10M 2N2170 GiP HSS 60M | A | 100 15 10 oO 20 10M 0.18 10M 2N2171 G|P 6-10 AFA 0.2W | A | 100 50 25 R [110 | 250 20M 120 |E 2N2172 G|P MSS 200M 1A 85 20 15 0 30 | 150 10M 0.2 10M {0.97 |B 5.0M |B 2N2173 |G] P HSS | 240M }A |100] 25 15 |O | 30 200M 0.
o back. SILICON CONTROLLED SWITCH (SCS)high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression. APPLICATIONS Unijunctions . Device Triggers Conventional Complementary Programmable 2N489-94, 2N2646 DSK1 2N6027 sus SBS 2N1671, 2N2160 2N2647 DSK2 2N6028 2N4983-90 2N4991-93 DC, Lo Cost F E E DC, Hi Perf. E DC, Volt Regulator F E E: E 1 E DC, Inverter DC, Hi AI/AT AC, @, Hi Perf. AC, , Hit AC, Lo RFI AC, , Lo Cost Trigger for SCRs nm >1 hr. F P F P F F P F P >1 min, Lo Cost F >1 min, Stable P <1 min, Lo Cost F <1 min, Stable P <10 P 10-25V E >25v P Stability F Cost F Adjust, Range E Military P Hi-Rel P F ajml al mi mim] ole] ol mae ain wlan] = F E F P F P E N N N F N N F F N N N Pp F E Economy rm E = Excellent, F Fair, P = Poor, N = Not Applicable With additional circuitry 2 Hermetic version 2N6116-18 123VUUAUUAUNAU UATE CONVENTIONAL UNISUNCTIONS General Electric produces a very broad line of standard UJTs. The TO-5 ceramic disc bar structure device has been the workhors
U20 B A 2N494C A 2N2419A B 2N2647 B 2N4870 . c MU2646 c A 2N1671 A 2N2419B B 2N2840 B 2N4871 Cc MU2646M B A 2N1671A A 2N2420 B 2N3479 A 2N4947 B MmU4891 Cc A 2N1671B A 2N2420A B 2N3480 A 2N4948 B MU4892 c A 2N1671C A 2N2420B B 2N3481 A 2N4949 B MU4893 c A 2N2160 A 2N2421 B 2N3482 A 2N5431 B MU4894 c == eee TET = STE Af UNIJUNCTION TRANSISTORS TO-5 CASE coe Oe ai eee ee oS ee Fee = = : = = an aS INTRINSIC INTERBASE PEAK-POINT EMITTER VALLEY-POINT | BASE 1 PEAK } STANDOFF RATIO RESISTANCE CURRENT | REV. CURRENT CURRENT VOLTAGE TYPE q 'BB Ip leg20 @ Vp2e Iv Vopt case | MIN. MAX. MIN. MAX. MAX. MAX. MIN. MIN. } -) ko kQ WA MA 7 mA 7 E 11 2N489 0.51 0.62 47 6.8 12 2.0 60 8.0 - t 41 2N489A 0.51 0.62 4.7 6.8 12 2.0 60 8.0 3.0 L L| 2N489B 0.51 0.62 4.7 6.8 6.0 0.2 30 8.0 3.0 F Ht 2N490 0.51 0.62 6.2 9.1 12 2.0 60 8.0 - }| 2N490A 0.51 0.62 6.2 9.1 12 2.0 60 8.0 3.0 ; | 2N490B 0.51 0.62 6.2 9.1 6.0 0.2 30 8.0 3.0 Hf 2N490C 0.51 0.62 6.2 9.1 2.0 0.02 30 8.0 3.0 Ft onaon 0.56 0.68 47 6.8 12 2.0 60 8.0 - 2N49
2N2160 4,0-12,0 8 25 3 2N2646-MET 4,7-9,1 4 5 3 2N2647-MET 4,7-9,1 8 2 6 2N6027 2N6028 UGAR . .. [] 40 40 I(a) I(v)min. V(output)min. . @Rg=10 . . a . . . (.) [A] [A] [] 150 70 6 150 25 6 P max. . [] 0,3 0,3 0,3 TO5 TO18 TO18 Pmax. . . [] 0,35 TO92 0,35 TO92 A Z 2N2160 2N6027 . - . TO-5 TO-18 TO-92 2N2646-MET
o back. SILICON CONTROLLED SWITCH (SCS)high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression. APPLICATIONS Unijunctions . Device Triggers Conventional Complementary Programmable 2N489-94, 2N2646 DSK1 2N6027 sus SBS 2N1671, 2N2160 2N2647 DSK2 2N6028 2N4983-90 2N4991-93 DC, Lo Cost F E E DC, Hi Perf. E DC, Volt Regulator F E E: E 1 E DC, Inverter DC, Hi AI/AT AC, @, Hi Perf. AC, , Hit AC, Lo RFI AC, , Lo Cost Trigger for SCRs nm >1 hr. F P F P F F P F P >1 min, Lo Cost F >1 min, Stable P <1 min, Lo Cost F <1 min, Stable P <10 P 10-25V E >25v P Stability F Cost F Adjust, Range E Military P Hi-Rel P F ajml al mi mim] ole] ol mae ain wlan] = F E F P F P E N N N F N N F F N N N Pp F E Economy rm E = Excellent, F Fair, P = Poor, N = Not Applicable With additional circuitry 2 Hermetic version 2N6116-18 123VUUAUUAUNAU UATE CONVENTIONAL UNISUNCTIONS General Electric produces a very broad line of standard UJTs. The TO-5 ceramic disc bar structure device has been the workhors
o back. SILICON CONTROLLED SWITCH (SCS)high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression. APPLICATIONS Unijunctions . Device Triggers Conventional Complementary Programmable 2N489-94, 2N2646 DSK1 2N6027 sus SBS 2N1671, 2N2160 2N2647 DSK2 2N6028 2N4983-90 2N4991-93 DC, Lo Cost F E E DC, Hi Perf. E DC, Volt Regulator F E E: E 1 E DC, Inverter DC, Hi AI/AT AC, @, Hi Perf. AC, , Hit AC, Lo RFI AC, , Lo Cost Trigger for SCRs nm >1 hr. F P F P F F P F P >1 min, Lo Cost F >1 min, Stable P <1 min, Lo Cost F <1 min, Stable P <10 P 10-25V E >25v P Stability F Cost F Adjust, Range E Military P Hi-Rel P F ajml al mi mim] ole] ol mae ain wlan] = F E F P F P E N N N F N N F F N N N Pp F E Economy rm E = Excellent, F Fair, P = Poor, N = Not Applicable With additional circuitry 2 Hermetic version 2N6116-18 123VUUAUUAUNAU UATE CONVENTIONAL UNISUNCTIONS General Electric produces a very broad line of standard UJTs. The TO-5 ceramic disc bar structure device has been the workhors
C Min. Comments Type @ Vos = 10V (mA) (uA) (uA) 7) Package 2N489 2N489/ * i -51-.62 2N4690 2N490 2N490A * 2N49068 2N4906 2N491 2N4914 * 2N4916 2N492 2N492A\ * 2N492B 2N4926 2N493 2N493/A * 2N493B 2N494 2N494A * 2N494B 2N494C 2N1671 2N1671A 2N1671B 2n1671C 2N2160 2N2646 .56-.75 10-5 Bar Structure 10-18 Cube Structure 2N2840 -62 Typical * JAN & JANTX types available 2 Vee=1.5V 124Silicon Unijunction Transistors Gt iI 2N1671,1A,B,C The General Electric Silicon Unijunction Transistor is a three terminal device having a stable N type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse current rating make this device useful in oscillators, timing circuits, trigger circuits and pulse generators where it can serve the purpose of two conventional silicon or ger- manium transistors, The 2N1671 is intended for general purpose industrial applications where circuit economy is of primary importance. The 2N1671A is intended fo
50 9.1 0.75 8.0 15 12 @ 60 4.6 2N494B 450 OL 0.75 8.0 6.0 0.2 @ 60 4.6 2N494C 450 9.1 0.62 8.0 2.0 0.02 @ 60 4.6 2N1L671 450 9.1 0.62 8.0 25 12 @ 30 5.0 2NL671A 450 9.1 0.62 8.0 25 12 @ 30 5.0 2N1671B 450 9.1 0.62 8.0 6.0 0.2 @ 30 5.0 2N1671C 450 4.1 -9.1 2N2160 450 4.0 -12 0.47 -0.80 8.0 25 12 @ 30 2N2417 390 0.68 0.62 8.0 20 12 @ 60 5.0 2N2417A 390 6.68 G.62 8.0 26 12 @ 60 4,0 2N2417B 300 6.8 0.51 -0.62 8.0 6.0 0.2 @ 30 4.0 2N2418 390 0.68 0.62 8.0 20 12 @ 60 5.0 2N2418A 390 9.1 0.62 8.0 20 12 @ 60 4.0 2N2418B 300 9.1 0.51 - 0.62 8.0 6.0 0.2 @ 60 4.0 2N2419 390 4.7 -6.8 0.68 8.0 20 12 @ 60 5.0 2N2419A 390 6.8 0.68 8.0 20 12 @ 60 4.3 2N2419B 300 6.8 0.56 -0.68 8.0 6.0 0,2 @ 30 4.3 2N2420 390 9.1 0.68 8.0 20 12 @ 60 5.0 2N2420A 390 9.1 0.68 8.0 20 12 @ 60 4.3 2N2420B 300 9.1 0.56 -0.68 8.0 6.0 0.2 @ 30 4.3 2N2421 390 6.8 0.75 8.0 20 12 @ 60 5.0 2N2421A 390 6.8 0.75 8.0 20 12 @ 60 4.6 2N2421B 300 6.8 4.7 -6.8 8.0 6.0 0.2 @ 30 4,6 2N2422 390 9.1 0.75 8.0 20 12 @ 60 5.0 2N2422A 390 9.1 0.75 8.0 20 1
5.0A 0.1} 5.04 2.0K JE 2N2158A |G] P 7-82 LPA 170W | C | 110 75 60 0 80 | 160 5.0A 0.1 5.0A 2.0K 1E 2N2159 Gy] P 7-82 LPA 170W | Cc | 110 90 90 $ 80 | 160 5.0A 0.1 5.04 2.0K |E 2N2159A | G] P 7-82 LPA 170W | c | 110 90 65 QO 80 | 160 5.0A 0.1 5.0A 2.0K }E 2N2160 Unijunction Transistor, see Table on Page 1-174 2N2161 S[N HSS 200M | A | 150 55 35 0 60 | 160 10M 1.5 10M 75 /E 2N2162 S| P CHP 150M} Aj 140 30 30 0 14M | T 2N2163 S| P CHP 150M | A | 140 15 15 0 14M | T 2N2164 S|P CHP 150M | A | 140 12 8.0 0 24M | T 2N2165 S| P CHP 150M | A | 140 30 30 0 1OM | T 2N2166 S|P CHP 150M | A | 140 15 15 0 10M | T 2N2167 S| P CHP 150M | A | 140 12 8.0 0 16M | T 2N2168 Gy P HSS 60M | A | 100 20 15 0 50 10M }0.225 10M 2N2169 GyYP HSS 60M | A | 100 45 US 9 40 10M Q.15 10M 2N2170 GiP HSS 60M | A | 100 15 10 oO 20 10M 0.18 10M 2N2171 G|P 6-10 AFA 0.2W | A | 100 50 25 R [110 | 250 20M 120 |E 2N2172 G|P MSS 200M 1A 85 20 15 0 30 | 150 10M 0.2 10M {0.97 |B 5.0M |B 2N2173 |G] P HSS | 240M }A |100] 25 15 |O | 30 200M 0.
50 9.1 0.75 8.0 15 12 @ 60 4.6 2N494B 450 OL 0.75 8.0 6.0 0.2 @ 60 4.6 2N494C 450 9.1 0.62 8.0 2.0 0.02 @ 60 4.6 2N1L671 450 9.1 0.62 8.0 25 12 @ 30 5.0 2NL671A 450 9.1 0.62 8.0 25 12 @ 30 5.0 2N1671B 450 9.1 0.62 8.0 6.0 0.2 @ 30 5.0 2N1671C 450 4.1 -9.1 2N2160 450 4.0 -12 0.47 -0.80 8.0 25 12 @ 30 2N2417 390 0.68 0.62 8.0 20 12 @ 60 5.0 2N2417A 390 6.68 G.62 8.0 26 12 @ 60 4,0 2N2417B 300 6.8 0.51 -0.62 8.0 6.0 0.2 @ 30 4.0 2N2418 390 0.68 0.62 8.0 20 12 @ 60 5.0 2N2418A 390 9.1 0.62 8.0 20 12 @ 60 4.0 2N2418B 300 9.1 0.51 - 0.62 8.0 6.0 0.2 @ 60 4.0 2N2419 390 4.7 -6.8 0.68 8.0 20 12 @ 60 5.0 2N2419A 390 6.8 0.68 8.0 20 12 @ 60 4.3 2N2419B 300 6.8 0.56 -0.68 8.0 6.0 0,2 @ 30 4.3 2N2420 390 9.1 0.68 8.0 20 12 @ 60 5.0 2N2420A 390 9.1 0.68 8.0 20 12 @ 60 4.3 2N2420B 300 9.1 0.56 -0.68 8.0 6.0 0.2 @ 30 4.3 2N2421 390 6.8 0.75 8.0 20 12 @ 60 5.0 2N2421A 390 6.8 0.75 8.0 20 12 @ 60 4.6 2N2421B 300 6.8 4.7 -6.8 8.0 6.0 0.2 @ 30 4,6 2N2422 390 9.1 0.75 8.0 20 12 @ 60 5.0 2N2422A 390 9.1 0.75 8.0 20 1