2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NW Switching and General Purpose Transistors 2N1131 (siticon) Veco = 20-35V 2N1131 USN/JAN lc = 600 mA 2N1991 f= 120 MHz Typ PNP silicon annular transistors for medium-current switching applications. Collector connected to case CASE 31 (TO-5) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vos Vde 2N1131 50 2N1991 30 Collector-Emitter Voltage VcEKo Vdc 2N1131 35 2N1991 20 Emitter-Base Voltage Veep Vdc 2N1131, 2N1991 5 Collector-Emitter Voltage VCER Vde (Rhe = 10 Q) 2N1131 50 Collector Current Ic mAdc 2N1131 600 Total Device Dissipation Pp @ 25C Case Temperature Both Types 2 Watts Derating Factor Above 25C 2N1131 13.3 mw/C 2N1991 16.0 mWw/C Total Device Dissipation Pp @ 25C Ambient Tem
50] 500m] 0.3]. 500M 1.0m | B 2nN1128 |G} P|2N1192 | 6-30 | AFA] L5oM]A| 85] 257 18/5 70|E 2n1129 |G] P| 2N3427 | 6-41 | AFAT 150M{A | 85 | 25 | 25 {v |i00|200/ Loom | 0.254 loom 2n1130 |G|P|2n1193 | 6-30 | AFA] 150m]a]| 85 | 30 50] 165 | loom} 0.25} 100m 2N1131 |s}P 8-90 | MsA| 600M {A ]175{ 50] 35/0] 20] 45] 150m] 1.5] 150m] i5]e | 5om|T 2N11314 |s|P|2n2800 | 8-161] MsA} 0.6w}A1175| 60/1 40fo] 20] 45]0.154] 1.5]0.154{ 15]e] Som|T 2ni132 |s|P 8-36 | MsA| 6oom }a]175) 50] 35)0 4 30) 90] 150m} 1.5) isom| 25]E] GomyT 2N1132a | 8 | P 8-36 | MsA| o.6wla ]i75{ 60] 40/0] 30] 90]0.15A]| 1:5]0.158] 25]e | 6om|T 2N1132B |S | P 8-36 | MSA} 0.6W|A1175 | 70] 45/0] 30] 90]0.15A |] 1.5} 0.154} 25]E] 60M] T 2N1135 |s| P mss| loom]4 {140] 12] 12]6 5.6M | T 2N1135A | S| P MSs | 100M]A]140] 12] 12]0 5.6M | T 2N1136 |G] P|2Nn1540 | 7-64 | LPA 100} 60] 35 |r] 50]100] 3.04] 1.0] 3.04 4l0K | E 2NL136A |G} P | 2N1542 | 7-64 | EPA 100 | 90} 35}R{ 50} 1001 3.04 | 1.0] 3.08 4.0K | E 1-114 Switching and Genera
ry to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/177F 4 August 1999 SUPERSEDING MIL-S-19500/177E 8 February 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN AND JANTX This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5). 1.3 Maximum ratings. PT 1/ TC = +25C PT 2/ TA = +25C VCBO VCEO VEBO IC TOP and TJ W W V dc V dc V dc mA dc C 2.0 0.6 50 40 5.0 600 -65 to +200 1/ Derate linearly 11.4 mW/C for TC +25C. 2/ Derate linearly 3.4 mW/C for TA +25C. 1.4 Primary electrical characterist
measures necessary to comply with this document shall be completed by 6 July 2009. MIL-PRF-19500/177G 6 April 2009 SUPERSEDING MIL-PRF-19500/177F 4 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN, AND JANTX This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, 2N1131 and 2N1132 (TO-39), 2N1131L, and 2N1132L (TO-5). * 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. PT (1) TC = +25C PT (2) TA = +25C VCBO VCEO VEBO IC TOP and TJ W W V dc V d
8 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1131L JAN JANTX JANTXV 2N1132 2N1132L ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc PT 0.6 2.0 W TJ, Tstg -65 to +200 C Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C (2) Operating & Storage Junction Temperature Range TO-39 2N1131, 2N1132 NOTES: 1/ Derate linearly 3.43mW/C for TA > +25C 2/ Derate linearly 11.4mW/C for TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 40 Colle
2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol All Units Units VCEO VCBO VEBO IC 40 50 5.0 600 0.6 2.0 Vdc Vdc Vdc mAdc W W -65 to +200 C @ T A = +250C(1) @ T C = +250C(2) Operating & Storage Temperature Range 1) 2) PT T op, T j 2N1131, 2N1132 TO-5* Derate linearly 3.4 mW/0C for T A +250C Derate linearly 11.4 mW/0C for T C +250C 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mAdc Collector-Base Breakdown Voltage V(BR)CBO IC = 10 Adc Emitter-Base Cutoff Current IEBO VEB = 5.0 Vdc Collector-Emitter Cutoff Current ICER VCE = 50 Vdc, RBE 10 ohms Collector-Base Cutoff Current VCB = 50 Vdc ICBO VCB = 30 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / F
2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM 2N1893X 2N2060 2N2060A 2N2060ADCSM 2N2060DCSM 2N2102 2N2102L 2N2192 2N2192A 2N2192AL 2N2192L 2N2194 2N2194A 2N2197 2N2197-TO39 2N2218 PRODUCT BCY78CSM BCY78DCSM BCY79 BCY79A BCY79B Status Polarity Package NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) PNP TO5 (TO205AA) PNP TO39 (TO205AD) PNP LCC1 PNP LCC2 (MO-041BB) NPN TO61 (TO210AC) NPN TO61 (TO210AC) TO5 (TO205AA) NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO39 (TO205AD) NPN TO5 (TO205AA) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO5Thermoslug NPN TO53 NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN LCC1 NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO77 (MO-002AF)
2N1131 (siticon) Veco = 20-35V 2N1131 USN/JAN lc = 600 mA 2N1991 f= 120 MHz Typ PNP silicon annular transistors for medium-current switching applications. Collector connected to case CASE 31 (TO-5) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vos Vde 2N1131 50 2N1991 30 Collector-Emitter Voltage VcEKo Vdc 2N1131 35 2N1991 20 Emitter-Base Voltage Veep Vdc 2N1131, 2N1991 5 Collector-Emitter Voltage VCER Vde (Rhe = 10 Q) 2N1131 50 Collector Current Ic mAdc 2N1131 600 Total Device Dissipation Pp @ 25C Case Temperature Both Types 2 Watts Derating Factor Above 25C 2N1131 13.3 mw/C 2N1991 16.0 mWw/C Total Device Dissipation Pp @ 25C Ambient Temperature Both Types 0.6 Watt Derating Factor Above 25C 2N1131 4.0 mW/C 2N1991 4.8 mWw/C Junction Temperature Ty 9 2N1131 +175 2N1991 +150 Storage Temperature Range T stg C 2N1131 -65 to +300 2Ni991 -65 to +150 8-90
/ (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1131L JAN JANTX JANTXV 2N1132 2N1132L ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc PT 0.6 2.0 W TJ, Tstg -65 to +200 C Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C (2) Operating & Storage Junction Temperature Range TO-39 2N1131, 2N1132 NOTES: 1/ Derate linearly 3.43mW/C for TA > +25C 2/ Derate linearly 11.4mW/C for TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 40 Colle
2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA +250C 2) Derate linearly 11.4 mW/0C for TC +250C Symbol All Units Units VCEO VCBO VEBO IC 40 50 5.0 600 0.6 2.0 -65 to +200 Vdc Vdc Vdc mAdc W W C PT Top, Tj 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mAdc Collector-Base Breakdown Voltage V(BR)CBO IC = 10 Adc Emitter-Base Cutoff Current IEBO VEB = 5.0 Vdc Collector-Emitter Cutoff Current ICER VCE = 50 Vdc, RBE 10 ohms Collector-Base Cutoff Current VCB = 50 Vdc ICBO VCB = 30 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (9
2N1131 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio... 1 of 2 http://www.americanmicrosemi.com/information/spec/?ss_pn=2N1131 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1131 Availability Online Store Diodes Buy 2N1131 at our online store! Transistors Integrated Circuits Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N1131 Information Optoelectronics Did you Know... Thyristors Category Transistors Products AMS is a leading Class Transistors; Bipolar; Si PNP Low-Power manufacturer of commercial Search for Parts Type Bipolar; Si PNP Low-Power Request a Quote Test Houses specializing in parts 2N1131 Specifications Information Spec Sheets Military/High-Rel : N Testimonials Store Policies Contact Us we create and test custom transistors and diodes for V(BR)CEO (V) : 35 FAQs Company discontinued by leading manufacturers. Not only can Tutorials Sh
2N1131, 2N1132 P-N-P SILICON TRANSISTORS BULLETIN NO. OL-S 731775, JUNE 1961REVISED MARCH 1973 GENERAL PURPOSE MEDIUM-POWER TRANSISTORS @ 2 Watts at 25C Case Temperature @ Complements to 2N696 and 2N697 @ 10-ohm Saturation Resistance (max) mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE r 2 BASE 0.260 ! o240 TO MIN "Ss . | 3 COLLECTOR Cc - FT wy ae 9370 yn 935 ae oe 9040 6029 : + sss | 90 a, oor 0.100 MIN t- o00s 3 LEADS rents 7 DETAWS OF OUTLINE IN~ oars DIA ALL DIMENSIONS ARE IN INCHES THIS ZONE OPTIONAL ~ SEATING 9018 UNLESS OTHERWISE SPECIFIED PLANE 1 EMITTER ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at 25C ambient temperature (unless ctherwise noted) Collector-Base Voltage. . . : Se . . .- 50v Collector-Emitter Voltage (See note 1). Cee ee 1. 7 35v Emitter-Base Voltage 2. . Sv Collector Current . - 600 ma Total Device Dissipation ot 25C | case temperature (See n note 5 2) . 2.0w Total Device Dissipation at 100C case temperature (See not
50 200 MHz A5T4125 AAA P15 30V 2mA 60-150 200 MHz 2N4125 T0-92 P1s 30V 50 mA 30-150 100 MHz 2N3703 TO-92 P20 30V 50 mA 30-150 100 MHz A8T3703 TO-92 P20 30V 50 mA 30-150 100 MHz 2N5448 AAA P20 35V 150 mA 20-45 50 MHz 2N721 TO-18 P20 35V 150 mA 20-45 50 MHz 2N1131 TO-39 P20 36V 150 mA 30-90 60 MHz 2N722 TO-18 P20 36V 150 mA 30-90 60 MHz 2N1132 TO-39 P20 35V 160 mA 76-200 60 MHz 2N2303 TO-5 P20 40V 10 mA 50-150 260 MHz 2N3260 TO-18 P23 40V 10mA 50-150 200 MHz A5T3905 AAA P15 40V 10 mA 50-150 200 MHz 2N3905 T0-92 P15 40Vv 10mA 100-300 300 MHz 2N3251 T0-18 P23 40V 10mA 100-300 250 MHz A5T3906 AAA P15 40V 10 mA 100-300 250 MHz 2N3906 T0-92 P15 40V S50 mA 100-300 TISs1 TO0-92 P20 40-V 60 mA 100-300 TIS93 AAA P20 *Sea package drawings on page 2-20. TEXAS INSTRUMENTS 27 INCORPORATED POST OFFICE BOX 6012 + DALLAS, TEXAS 75222TRANSISTOR SELECTION GUIDES P-N-P GENERAL PURPOSE (Continued) ViBRICEO hee fr DEVICE MIN Gic MIN-MAX MIN TYPE PACKAGE cHie 40V 150 mA 40-120 200 MHz 2N2904 TO-5 P20 40V 150 mA 40-120 2
ion maw) or at ME mn) Application Ref. (mW * fa Vo VCE VE le TD fe, cmtzy- | 6? | AH? | ABO | wa HA v FERRANTI (Continued) Current Types (Continued) ZTX4403.sPE 500 200 - 40 150 200 at 150 _ \ 67 ZTX3906 PE 500 250 -40 200 200at 10 __ f General purpose 6% 2N1131 PE 600 50 = --50 3505 ~ 20% at 150 1 50 . as 2N1132 PE 600 60t -50 -35 5 ~ 30f at 150.1 50 f High speed switching 2 ZTK537 PE 750 100 45 ~ 100 350 at 100 67 ZTX538 PE 750 100 25 100 350 at 100 - 67 ZTX550 PE 1W 150 45 150 200 at 150 _ 67 ZTX551 PE W150 - -60 1A 100 at 150 = General purpose 67 ZT210 PE sw 60 40 5 1A - 20 at 150 0.5 60 2 ZT211 PE sw 90 -65 5 1A 40 at 150 0.5 60- 2 BUY90 PE 20w 50 -120 -60 3A - 60 at 0.5 _ -_ 2 BUY91 PE 24w 50 120 60 6A s- 58 at 0.5 _ _ Drivers, amplifiers 2 BUY92 PE 30W 50 120 -60 9A 457 at 0.5 _ 2 ft Minimum value I.T.T. Current Types BF 450 P 150 325 40 ~ 25 60 at 1 _ ce. 49 BF451 P 150 395 _ _40 _ 25 30 at 1 _ _ A.M./F.M. LF. amplifiers 49 2N3962 PE 200 270 -60 -60 5 200 275 at 2 0.01 50 2 BCY70 PE 200 2
A: hFE: hFE A: VCE: VBE: IC: COB: fT: Case Style: TO-220AB: Industry Type: 2SA2182 STI Type: 2SA2183 Notes: Polarity: PNP Power Dissipation: Tj: VCEV: VCEO: 60 hFE min: hFE max: hFE A: VCE: VCE A: fT: Case Style: TO-220AB Industry Type: 2SA2183 STI Type: 2N1131 Notes: Polarity: PNP Power Dissipation: .6 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 20 hFE A: 150M VCE: VBE: IC A: COB: fT: 50 Case Style: TO-205AD/TO-39 Industry Type: 2N1131 STI Type: 2N1131L Notes: Polarity: PNP Power Dissipation: 600M VCBO: 40 VCER: ICBO: ICBO ua: hFE: hFE A: VCE: VBE: IC A: COB: fT: Case Style: TO-205AD/TO-39 Industry Type: 2N1131L STI Type: 2N1132 Notes: Polarity: PNP Power Dissipation: .6 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 30 hFE A: 150M VCE: VBE: IC A: COB: 10 fT: 60 Case Style: TO-205AD/TO-39 Industry Type: 2N1132 IN STOCK STI Type: 2N1336 Notes: Polarity: NPN Power Dissipation: 800m Tj: VCBO: 120 VCEO: hFE min: 10 hFE max: 150 hFE A: 30m VCE: VCE A: hfe: fT: 70m Case Style: TO-20