150M | A] 175] 15 15]}0] 25] 150] lom| 0.6] om 2n1007 | G| P LPA{ 35W | c}] 95] 25 20/0] 50} 250] 10a] 1.0] 2.0A] 25]E] 60K] T 2n1008 | G] P 6-24 | AFA} o.3w |c] 85] 20 15]R 0.25} O.1A| 40/E IN1008A | G} P 6-24 | aval o.3w |c]} 85) 40 35 1R 0.25} OA) 4olz 2N1008B | G} P 6-24 | AFA| 0.3W | C] 85] 60 55]R 0.25] O.1A} 40} E 2n1009 | G] P AFA| 0.4w | CT 85] 35 35]R 0.25| O.1A] 40]E] 7.5K] E 2n1010 | G| N Arc| 20m |al 55] 10 10] 0 2n1011 | G{ P 7-44 | tpal 35w {cl 95] 80 8015] 30] 75] 3.0A] 1.5] 3.0A] 20} E] 5.0K] E 2N1012 | G] N wsa] 150M | A] 100} 40 22/0] 40 100M| 0.2] 100M 3.0M] E 2n1014 |G] P| 2N1552] 7-67 | LPA}] 5ow |c} 100} 100 65]0} 20] 50] 4.0A] 0.8] 4.04 0.5M} B 2N1015 {S| N| 2N3713} 7-125 | Pms| i50ow | c[ 150} 30 30 |v] 10 2.0A| 1.5| 2.0A 3N1O15A | STN pms | 150w | c[ 150] 60 60; Vv] 10 2.0A[ 1.5] 2.0A 2N1015B| ${ N pas | 150w | c] 150} 100 | 100|v] 10 2.0A| 1.5] 2.04 2N1015c | S$] N pms | 1507 | c}] 150] 150 | 150] v]. 1o 2.0A| 1.5] 2.04 2NL015D | S| N pms | 150w | Cc} 150] 200 | 200] Vv
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 2
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 2
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 2
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 2
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 2
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 2
N1131A 2N1150 (Cont'd) 2N1176A 2N1208 (Cont'd) 2N1235 (Cont'd) 2N1259 2N2905A 1 MOTA PN2221 3 NSC 2N1008A 1 LTE 2N4914 3 RCA 2N3442 a RCA 2N869A 1 MOTA DE159 1 DGE THC2221 3 SPR 2N1176B BDW21A a SGSI 2N6262 3 RCA PN3640 3 NSC THC2905A 3 SPR TMPT2221 a SPR 2N1008B 1 LTE 2N1209 DE385 3 OGE | 2N1260 TN2905A a NSC TP2221 a SPR 2N1177 BDX91 1 PHIN 2N1238 2N5479 1 GSE TP2905A a SPR 2N1151 DE126A 1 DGE DE73 1 DGE 2N3467 1 MOTA 2N5349 3 MOTA 2N1132 2N2221 1 MOTA] 2N1178 2N4914 3 RCA DE106 1 DGE f 2N126t 2N2904 1 SGSI DE123 1 DGE DE126A 1 DGE BDW21A 3 SGSI 2N4037 3 PHIN 2N2554 1 LTE 2N4037 1 RCA BSSss1B 3 SIEG | 2N1179 2N1212 D41D4 3 GESY BDx96 1 PHIN DE159 1 DGE DE123A 3 DGE DE126A 1 DGE BDX91 1 PHIN | 2N1239 DE105 1 DGE PN2906 1 NSC GES222A 3 GESY | 2N1180 DE73 1 DGE 2N3467 1 MOTA BOW22C 3 SGSI BCX52-10 3 SIEG PN2221 a NSC DE126A 1 DGE 2N4914 a RCA DE106 1 OGE DE176 3 DGE BD138 a PHIN THC2221 a SPR 2N1162 BOW21A 3 SGSI 2N4037 3 PHIN | 2N1262 D41D4 a GESY TMPT2221 a SPR 2N3612 1 LTE 2N1213 D41D4 a GESY 2
A 2N653 200 | 100] 301 25 250 | 30 70 6 1 11.5 2N654 200 | 100| 30] 25 250 | 50 |125 6 1 | 2.0 2N655 200 | 100 | 30| 25 250 | 100 |250 6 1 | 2.5 2N1008 | 200 | 100] 20] 20 300 | 40 hge | 150 5 | 10 | 2n1008A | 200 | 100} 40/ 40@ | 300 | 40 hfe |150 5 | 10 2N1008B | 200 | 100] 60! 60@ | 300 | 40 hg | 150 5 10 | 2n1175 | 225 | 100| | 25 500 | 70 |140 1 | 20 }156 2N1185 | 200 | 100] 45] 30 500 | 190 |400 6 1 |3.0 2n1186 | 200 | 100| 60] 45 500 | 30 70 6 1/15 2N1187 | 200 | 100| 60| 45 500 | 50 |120 6 1 | 2.0 2n1188 | 200 | 100| 60| 45 500 | 100 [225 6 1 [2.5 2Niis9 | 200 | 100 | 45 | 30 500 | 60 _ 1 | 10@ 3.5 2N1190 | 200 | 100| 45| 30 500 | 100 1 1003) 4.5 2N1191 | 200 | 100| 40] 25 200 | 30 70 6 1 115 2n1192 | 200 | 100| 40] 25 200 | 50 125 6 1 | 2.0 6-4Germanium Milliwatt Transistors 2N398 , 2n398 A Voce = 105 V hee = 20 (min) 2N398 USN/JAN fa, - to 1.0 MHz (typ) PNP germanium transistor for high-voltage, audio- CASE 31 frequency applications. (TO-5) All leads isolated MAXIMUM RATINGS Rating Symb
150M | A] 175] 15 15]}0] 25] 150] lom| 0.6] om 2n1007 | G| P LPA{ 35W | c}] 95] 25 20/0] 50} 250] 10a] 1.0] 2.0A] 25]E] 60K] T 2n1008 | G] P 6-24 | AFA} o.3w |c] 85] 20 15]R 0.25} O.1A| 40/E IN1008A | G} P 6-24 | aval o.3w |c]} 85) 40 35 1R 0.25} OA) 4olz 2N1008B | G} P 6-24 | AFA| 0.3W | C] 85] 60 55]R 0.25] O.1A} 40} E 2n1009 | G] P AFA| 0.4w | CT 85] 35 35]R 0.25| O.1A] 40]E] 7.5K] E 2n1010 | G| N Arc| 20m |al 55] 10 10] 0 2n1011 | G{ P 7-44 | tpal 35w {cl 95] 80 8015] 30] 75] 3.0A] 1.5] 3.0A] 20} E] 5.0K] E 2N1012 | G] N wsa] 150M | A] 100} 40 22/0] 40 100M| 0.2] 100M 3.0M] E 2n1014 |G] P| 2N1552] 7-67 | LPA}] 5ow |c} 100} 100 65]0} 20] 50] 4.0A] 0.8] 4.04 0.5M} B 2N1015 {S| N| 2N3713} 7-125 | Pms| i50ow | c[ 150} 30 30 |v] 10 2.0A| 1.5| 2.0A 3N1O15A | STN pms | 150w | c[ 150] 60 60; Vv] 10 2.0A[ 1.5] 2.0A 2N1015B| ${ N pas | 150w | c] 150} 100 | 100|v] 10 2.0A| 1.5] 2.04 2N1015c | S$] N pms | 1507 | c}] 150] 150 | 150] v]. 1o 2.0A| 1.5] 2.04 2NL015D | S| N pms | 150w | Cc} 150] 200 | 200] Vv
150M | A] 175] 15 15]}0] 25] 150] lom| 0.6] om 2n1007 | G| P LPA{ 35W | c}] 95] 25 20/0] 50} 250] 10a] 1.0] 2.0A] 25]E] 60K] T 2n1008 | G] P 6-24 | AFA} o.3w |c] 85] 20 15]R 0.25} O.1A| 40/E IN1008A | G} P 6-24 | aval o.3w |c]} 85) 40 35 1R 0.25} OA) 4olz 2N1008B | G} P 6-24 | AFA| 0.3W | C] 85] 60 55]R 0.25] O.1A} 40} E 2n1009 | G] P AFA| 0.4w | CT 85] 35 35]R 0.25| O.1A] 40]E] 7.5K] E 2n1010 | G| N Arc| 20m |al 55] 10 10] 0 2n1011 | G{ P 7-44 | tpal 35w {cl 95] 80 8015] 30] 75] 3.0A] 1.5] 3.0A] 20} E] 5.0K] E 2N1012 | G] N wsa] 150M | A] 100} 40 22/0] 40 100M| 0.2] 100M 3.0M] E 2n1014 |G] P| 2N1552] 7-67 | LPA}] 5ow |c} 100} 100 65]0} 20] 50] 4.0A] 0.8] 4.04 0.5M} B 2N1015 {S| N| 2N3713} 7-125 | Pms| i50ow | c[ 150} 30 30 |v] 10 2.0A| 1.5| 2.0A 3N1O15A | STN pms | 150w | c[ 150] 60 60; Vv] 10 2.0A[ 1.5] 2.0A 2N1015B| ${ N pas | 150w | c] 150} 100 | 100|v] 10 2.0A| 1.5] 2.04 2N1015c | S$] N pms | 1507 | c}] 150] 150 | 150] v]. 1o 2.0A| 1.5] 2.04 2NL015D | S| N pms | 150w | Cc} 150] 200 | 200] Vv
A 2N653 200 | 100] 301 25 250 | 30 70 6 1 11.5 2N654 200 | 100| 30] 25 250 | 50 |125 6 1 | 2.0 2N655 200 | 100 | 30| 25 250 | 100 |250 6 1 | 2.5 2N1008 | 200 | 100] 20] 20 300 | 40 hge | 150 5 | 10 | 2n1008A | 200 | 100} 40/ 40@ | 300 | 40 hfe |150 5 | 10 2N1008B | 200 | 100] 60! 60@ | 300 | 40 hg | 150 5 10 | 2n1175 | 225 | 100| | 25 500 | 70 |140 1 | 20 }156 2N1185 | 200 | 100] 45] 30 500 | 190 |400 6 1 |3.0 2n1186 | 200 | 100| 60] 45 500 | 30 70 6 1/15 2N1187 | 200 | 100| 60| 45 500 | 50 |120 6 1 | 2.0 2n1188 | 200 | 100| 60| 45 500 | 100 [225 6 1 [2.5 2Niis9 | 200 | 100 | 45 | 30 500 | 60 _ 1 | 10@ 3.5 2N1190 | 200 | 100| 45| 30 500 | 100 1 1003) 4.5 2N1191 | 200 | 100| 40] 25 200 | 30 70 6 1 115 2n1192 | 200 | 100| 40] 25 200 | 50 125 6 1 | 2.0 6-4Germanium Milliwatt Transistors 2N36 I thru 2N383 Ves = 50V hee to 110-250 (min-max) 2N2171 fa, to 7.5 MHz PNP germanium transistors for small-signal audio CASE 31 amplifiers, Class B push-pull output stages and medium - . speed switching circuits.
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3 Germanium Milliwatt Transistors NUMERICAL-ALPHABETICAL LISTING (continued) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY and Vcer Nee @ Vee & Ic fap Hi-Rel Tyoe Pp Ts |Veso] (R= 10k)| Ic - typ Type yp mw | C |volts] volts | mA | min max | volts | mA | MHz 2N1193 200 | 100] 40] 25 200 | 100 250 6 1) 2.5 2N1194 200 | 100 | 40] 25 200 | 190 500 6 ee) 2N1408 150 | 100] 50] 50@ 200 10 1 1@ 2N1413 225 | 100] 35] 25 500 23 65 1 20 |0.8@ 2N1415 225 | 100! | 25 500 53 1 20 |1.3@ 2N1705 200 | 100] 18] 12 400
600 2N1029 5.250 5.070 4.750 4.200 4.050 3.700 NJS 12.000 0S2 11,580 10.250 9.890 NJS QS2 SEI 2N103 3.650 3.520 3.150 NJS QS2 SEI 2N1028 21.000 20.270 2N1018 2N1021A NJS 22.000 QS2 21.230 3.100 1.590 1.450 1.850 2N1029B 3.350 3.230 2.850 2.100 2.000 1.930 2N1008B CRY 4.620 1.900 NJS 1.830 062 3.000 SEI 19.750 19.060 3.650 3.520 3150 NJS QS2 Se 2.520 2.500 2.410 2N1008A 2N101/13 25N18 66.000 e 55.000 D NJS 30.000 QS2 28950 SEI 39.930 1.820 1.750 1.690 3200 2N101 25N10 NJS 26.000 QS2 25.090 2.180 2.100 2.030 3.800 NJS QS2 RFP HGTP 2ONJ40C NJS 25.000 062 24.130 3.400 3.280 3300 GTC NJS 0S2 Se 17.000 16.410 2N1016B 3.950 3.810 3850 GTC NJS 0S2 RFP HGTG 20N60C3R NJS 052 Se 2N1008 25NO5L 5.300 c HGTG HARR 1.540 c RFP 20N60C3DR 3.500 3.380 3.400 2N1007 HGTG HARR AO 25N05 6.980 a 5.730 o HARR 1.000 IRLZ HGTP 201460B3D HARR 1.040 0.830 IR NJS 4.000 052 3860 SEI 3.930 2N1000 24NSTRR 20N60B3 2N1016A 2N1017 3.000 2.900 2.930 SEI IRFZ HGTG 0.720 c 3.200 3090 3.100 NJS 12.000 11.580 2N1016D 2N100 0.980 0.780 A
of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3 Germanium Milliwatt Transistors NUMERICAL-ALPHABETICAL LISTING (continued) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY and Vcer Nee @ Vee & Ic fap Hi-Rel Tyoe Pp Ts |Veso] (R= 10k)| Ic - typ Type yp mw | C |volts] volts | mA | min max | volts | mA | MHz 2N1193 200 | 100] 40] 25 200 | 100 250 6 1) 2.5 2N1194 200 | 100 | 40] 25 200 | 190 500 6 ee) 2N1408 150 | 100] 50] 50@ 200 10 1 1@ 2N1413 225 | 100] 35] 25 500 23 65 1 20 |0.8@ 2N1415 225 | 100! | 25 500 53 1 20 |1.3@ 2N1705 200 | 100] 18] 12 400