1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features * High Surge Capability * Types up to 600 V VRRM DO-5 Package * Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit V VRRM 50 100 200 VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V 400 600 Continuous forward current IF TC 150 C 40 40 40 40 40 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 800 800 800 800 800 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR
1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features * High Surge Capability * Types up to 600 V VRRM DO-5 Package * Not ESD Sensitive A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. C A C Stud Stud (R) Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Symbol Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit VRRM 50 100 200 400 600 V VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V Continuous forward current IF TC 150 C 40 40 40 40 40 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 800 800 800 800 800 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Diode forward voltage
1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features * High Surge Capability * Types up to 600 V VRRM DO-5 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1188 (R) 1N1190 (R) Unit V VRRM 50 100 200 VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V 400 600 Continuous forward current IF TC 150 C 40 40 40 40 40 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 800 800 800 800 800 A Operating temperature Storage temperature Tj Tstg -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1188 (R) 1N1190 (R) Unit V IF = 40 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 5
CHOTTKY DIODES Features: * High Surge Capability Features: * High Surge Capability Mfg. Part No. 1N1199A 1N1199AR 1N1200A 1N1200AR S70B S70BR S85B S85BR 1N1184 1N1184R 1N2130A 1N2130AR 1N1186 1N1186R 1N1202A 1N1202AR 1N1204A 1N1204AR 1N1188 1N1188R 1N1190 1N1190AR 1N1190R 1N1206A 1N1206AR 1N2138A 1N2138AR 1N3214 1N3214R S150J S150JR S85J S85JR 1N3671A 1N3671AR S150K S150KR 1N3673A 1N3673AR 1N3768 1N3768R S150M S150MR S70M S70MR S85M S85MR S150Q S150QR S300Y S300YR S40Q S40QR S70Q S70QR S85Q S85QR S85V S85VR S70V S70VR S40Y S40YR VRRM (V) 50 50 100 100 100 100 100 100 100 100 150 150 200 200 200 200 400 400 400 400 600 600 600 600 600 600 600 600 600 600 600 600 600 800 800 800 800 1 kV 1 kV 1 kV 1 kV 1 kV 1 kV 1 kV 1 kV 1 kV 1 kV 1.2 kV 1.2 kV ... ... 1.2 kV 1.2 kV 1.2 kV 1.2 kV 1.2 kV 1.2 kV 1.4 kV 1.4 kV 1.4 kV 1.4 kV 1.6 kV 1.6 kV IFAVG (A) 12 12 12 12 70 70 85 85 35 35 60 60 35 35 12 12 12 12 35 35 35 40 35 12 12 60 60 15 15 150 150 85 85 12 12 150 150 12 12 35 35 150 150 70 70 85 85 150 150