VNV35N07-E OMNIFET: fully autoprotected Power MOSFET Datasheet - production data * Diagnostic feedback through input pin * ESD protection 3 1 * Direct access to the gate of the Power MOSFET (analog driving) 3 1 2 * Compatible with standard Power MOSFET D2PAK TO-220 * Standard TO-220 package * Compliant with 2002/95/EC European directive 10 Description 1 PowerSO-10 The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower(R) technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Features Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Type Vclamp RDS(on) Ilim VNP35N07-E 70 V 0.028 35 A VNB35N07-E 70 V 0.028 35 A VNV35N07-E 70 V 0.028 35 A Fault feedback can be detected by monitoring the voltage at the input pin. * Automotive qualified * Linear current limitation * Thermal shutdown * Short circuit protection * Integrated clam

ES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 13/13 VNP35N07FI VNB35N07/VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS(on) I l im VNP35N07F I VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET ) (s DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh t c u d o r P e t e l o du ISOWATT220 e t e ol s b O 1 D2PAK TO-263 ) s ( ct o r P 3 1 2 10 3 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () s b O () PowerSO-10 Pin Con

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB June

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN

VNV35N07 OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vetamp Rps(on) lhim VNP35NO7FI 70V 0.028 Q 35 A VNB35N07 7OV 0.028 2 35 A VNV35N07 70V 0.028 0 35 A LINEAR CURRENT LIMITATION s THERMAL SHUT DOVWN a SHORT CIRCUIT PROTECTION INTEGRATED CLAMP a LOW CURRENT DRAWN FROM INPUT PIN a DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using SGS-THOMSON Vertical Intelligent Power MO Technology, intended for replacement of Standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect BLOCK DIAGRAM (+) ISOWATT220 3 1 D2PAK TO-263 PowerS0O-10 the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN Overvoltage Clamp INPUT 1 | Gote | "| Linear bd Current Limiter Over . |

VNV35N07-E OMNIFET: fully autoprotected Power MOSFET Datasheet - production data * Diagnostic feedback through input pin * ESD protection 3 1 * Direct access to the gate of the Power MOSFET (analog driving) 3 1 2 * Compatible with standard Power MOSFET D2PAK TO-220 * Standard TO-220 package * Compliant with 2002/95/EC European directive 10 Description 1 PowerSO-10 The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower(R) technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Features Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Type Vclamp RDS(on) Ilim VNP35N07-E 70 V 0.028 35 A VNB35N07-E 70 V 0.028 35 A VNV35N07-E 70 V 0.028 35 A Fault feedback can be detected by monitoring the voltage at the input pin. * Automotive qualified * Linear current limitation * Thermal shutdown * Short circuit protection * Integrated clam

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB June

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB Septe

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB June

VNV35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS(on) I l im VNP35N07F I VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 0.028 0.028 35 A 35 A 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect ISOWATT220 3 1 2 10 1 D2PAK TO-263 3 1 PowerSO-10 the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM () () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRA

N a INTEGRATED GLAMP a LOW CURRENT DRAWN FROM INPUT PIN a DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) a COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The YNP35NO07Fl, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VlIPower MO Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overveliage clamp protect the chip in harsh BLOCK DIAGRAM (+) ISOWATT220 3 PowerSoO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. INPUT [1] Gate a Overvoltage Clamp Control Over Limiter Lingar Current bn) mu | Temperatura Y STATUS. Sco7ed0 La} SOURCE (#) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE =1,2,4,5; DRAIN = TAB June 1998 1/13VNP35NO7A-VNB35NO7-VNV35N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit PowerSO-10 ISOW ATT220 D2PAK Vos Drain-sour

vailable in SOT-223, SO-8, DPAK, IPAK. BTS134D VNP20N07/FI VNB20N07 VNV20N07 VNP20N07/FI VNB20N07 VNV20N07 1* See BTS133; BTS136 VNP28N04 VNB28N04 1* Output clamped (42V); 2* Available in TO-220, ISOWATT220, PowerSO-10, D2PAK. BTS140A VNP35N07/FI VNB35N07 VNV35N07 VNS14NV04 VNP14NV04 VND14NV04/04-1 1* Output clamped (70V) (BTS140A clamped at 50V); 2* Input clamped (-0.3V); 3* Available in TO-220, PowerSO-10, ISOWATT 220, D2PAK; BTS140A in TO-220. 4* Output clamped (40V); 5* Linear current limitation at 14A; 6* Available in TO-220, SO-8, DPAK, IPAK; BTS140A in TO-220. BTS118D BTS120 BTS120 BTS121A BTS121A BTS130 BTS134D BTS140A 1* Output clamped (40V); 2* Linear current limitation at 7A; 3* Available in SOT-223, SO-8, DPAK, IPAK; BTS130 in TO-220. 1* See BTS133; Low Side Switches contd. Competition BTS141 ST nearest ST advanced features VNP35N07/FI VNB35N07 VNV35N07 VNS14NV04 VNP14NV04 VND14NV04/04-1 1* Output clamped (70V) (BTS141 clamped 60V); 2* No latched overload protection; 3* A

erSO-10 PENTAWATT PowerSO-10 PENTAWATT PowerSO-10 PENTAWATT PENTAWATT PowerSO-10 PENTAWATT AUTOMOTIVE CAR BODY / CAR ENGINE SMART POWER ACTUATORS (cont'd) ICs Type VN31SP VN370B VN410 VN450 VN460 VND05B VND05BSP VND10B VND10BSP VNW50N04 VNW100N04 VNV49N04 VNV35N07 VNV28N04 VNV20N07 VNV14N04 VNV10N07 VNP7N04FI VNP7N04 VNP5N07FI VNP5N07 VNP49N04F VNP49N04 VNP35N07F VNP35N07 VNP28N04F VNP28N04 VNP20N07F VNP20N07 VNP14N04F VNP14N04 VNP10N07F VNP10N07 VNP10N06F VNP10N06 VNK7N04FM VNK5N07FM VNK14N04F VNK10N07F VNK10N06 VND7N04-1 VND7N04 VND5N07-1 VND5N07 VND10N06-1 VND10N06 VNB49N04 VNB35N07 VNB28N04 VNB20N07 VNB14N04 VNB10N07 Description I.S.O. High Side Driver - Rds(on) 30mOhms Triple High Side Driver - Rds(on) 250mOhms (1 channel) / 1.7Ohm(2 channels) Dual High Side Driver per Blinker - Rds(on) 70mOhms Triple High Side Driver - Rds(on) 50mOhms (2 channels) / 300mOhms (1 channel) High Side Driver - Rds(on) 20mOhms Dual High Side Driver - Rds(on) 200mOhms per channel Dual High Side Driver - Rds(on) 20

IP SO8 SO8 MINIDIP SO8 MINIDIP SO8 POWERDIP (12 + 3 + 3) SO (12 + 4 + 4) SO28 DIP28 DIP28 DIP20 DIP20 DIP16/SO14 DIP14/SO14 MINIDIP SO8 DIP14 SO14 SMART POWER ACTUATORS Type VN02AN VN02ANSP VN20AN VN20ANSP VN220 VN330SP VN340SP VNW50N04 VNW100N04 VNV49N04 VNV35N07 VNV28N04 VNV20N07 VNV14N04 VNV10N07 VNP7N04FI VNP7N04 VNP5N07FI VNP5N07 VNP49N04F VNP49N04 VNP35N07F VNP35N07 VNP28N04F VNP28N04 VNP20N07F VNP20N07 VNP14N04F VNP14N04 VNP10N07F VNP10N07 VNP10N06F VNP10N06 VNK7N04FM Description High Side Driver - Rds(on) 350mOhms High Side Driver - Rds(on) 350mOhms High Side Driver - Rds(on) 50mOhms High Side Driver - Rds(on) 50mOhms High Side Driver - Rds(on) 50mOhms Quad High Side Driver - Rds(on) 200mOhms per channel Quad High Side Driver - Rds(on) 200mOhms per channel 3 Pins Fully Protected PowerMOS - Rds(on) 12mOhms 3 Pins Fully Protected PowerMOS - Rds(on) 12mOhms 3 Pins Fully Protected PowerMOS - Rds(on) 20mOhms 3 Pins Fully Protected PowerMOS - Rds(on) 28mOhms 3 Pins Fully Protected PowerMOS - Rd