48M) Value Units 500 mW -65 to +200 C +175 C Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA 2 A IFSURGE Peak Forward Surge Current L PD Parameter L : Logo DEVICE MARKING DIAGRAM (TC1N4448M / TC1N914BM) L xxxx Symbol DEVICE MARKING DIAGRAM TA = 25C unless otherwise noted These ratings are limiting values above which the serviceability of the diode may be impaired. L : Logo Device Code : TC1NxxxxM Specification Features: Fast Switching Device (TRR <4.0 nS) DO-34 Package (JEDEC DO-204) DEVICE MARKING DIAGRAM Through-Hole Device Type Mounting (TC1N4148M) Anode Cathode Hermetically Sealed Glass Compression Bonded Construction All external surfaces are corrosion resistant and leads are readily solderable ELECTRICAL SYMBOL Cathode indicated by polarity band Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF TRR Breakdown Voltage Reverse Leakage Current Forward Voltage Reverse Reco

V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current Peak Forward Surge Current (Pulse Width = 1.0 second) 450 mA 2 A IFSURGE L PD DEVICE MARKING DIAGRAM TA = 25C unless otherwise noted L : Logo DEVICE MARKING DIAGRAM (TC1N4448M / TC1N914BM) L xxxx Symbol AXIAL LEAD DO34 These ratings are limiting values above which the serviceability of the diode may be impaired. L : Logo Device Code : TC1NxxxxM Specification Features: Fast Switching Device (TRR <4.0 nS) DO-34 Package (JEDEC DO-204) Through-Hole Device Type Mounting Anode Cathode Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable ELECTRICAL SYMBOL RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF TRR Breakdown Voltage Reverse Leakage Current Forward Voltage Reverse Recovery Time IR=100A 10

TC1N914BW TCBAV19W TC1SS400 TC1N914BWT TCRB551V-30 TCRB520S-30 TCRB521S-30 TCRB751S-40 TCMM3Z2V4C TCMM3Z2V7C TCMM3Z3V0C TCMM3Z3V3C TCMM3Z3V6C TCMM3Z3V9C TCMM3Z4V3C TCMM3Z4V7C TCMM3Z5V1C TCMM3Z5V6C TCMM3Z6V2C TCMM3Z6V8C TCMM3Z7V5C TCMM3Z8V2C TCMM3Z9V1C TCMM3Z10VC TCMM3Z11VC TCMM3Z12VC TCMM3Z13VC TCMM3Z15VC TCMM3Z16VC TCMM3Z18VC TCMM3Z20VC TCMM3Z22VC TCMM3Z24VC TCMM3Z27VC(Izt1 TCMM3Z30VC(Izt1 TCMM3Z33VC(Izt1 TCMM3Z36VC(Izt1 TCMM3Z39VC(Izt1 TCMM3Z43VC(Izt1 TCMM3Z47VC(Izt1 TCMM3Z51VC(Izt1 TCMM3Z56VC(Izt1 TCMM3Z62VC(Izt1 TCMM3Z68VC(Izt1 TCMM3Z75VC(Izt1 TCMM3Z2V4B TCMM3Z2V7B TCMM3Z3V0B TCMM3Z3V3B TCMM3Z3V6B TCMM3Z3V9B TCMM3Z4V3B TCMM3Z4V7B TCMM3Z5V1B TCMM3Z5V6B TCMM3Z6V2B TCMM3Z6V8B TCMM3Z7V5B TCMM3Z8V2B TCMM3Z9V1B Cross Reference MFG Name BAV20 ON-SEMI BAV21 ON-SEMI BAS16HT1 ON-SEMI MMDL914T1 ON-SEMI MMSD4148T1 ON-SEMI MMSD103T1 ON-SEMI 1SS400T1 ON-SEMI NSD914XV2T1 ON-SEMI NSR0320MW2T1/NSR1020MW2T1G ON-SEMI RB520S30T1 ON-SEMI RB521S30T1 ON-SEMI RB751S40T1 ON-SEMI MM3Z2V4T1,G ON-SEMI MM3Z2

t Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF Breakdown Voltage Reverse Leakage Current Forward Voltage TC1N4448, TC1N914B TC1N4148 TC1N4448, TC1N914B TRR Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A IF=5mA 0.62 0.72 IF=10mA 1.0 IF=100mA 1.0 Volts IF=10mA, VR=6V RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1MHZ February 2008 / D Page 1 TC1N4148/TC1N4448/TC1N914B TAK CHEONG TAK CHEONG (R) SEM IC O N DU C TO R Package Outline Package Case Outline DO-35 DO-35 DIM Millimeters Inches Min Max Min Max A 0.46 0.55 0.018 0.022 B 3.05 5.08 0.120 0.200 C 25.40 38.10 1.000 1.500 D 1.53 2.28 0.060 0.090 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. This datasheet presents technical data of Tak Cheong's Switching Diodes. Complete specifications for the indivi

t Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF Breakdown Voltage Reverse Leakage Current Forward Voltage TC1N4448, TC1N914B TC1N4148 TC1N4448, TC1N914B TRR Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A IF=5mA 0.62 0.72 IF=10mA 1.0 IF=100mA 1.0 Volts IF=10mA, VR=6V RL=100 4 nS 4 pF IRR=1mA C Capacitance Number: DB-036 October 2008 / F VR=0V, f=1MHZ Page 1 TC1N4148/TC1N4448/TC1N914B TAK CHEONG TAK CHEONG (R) SEM IC O N DU C TO R Typical Characteristics 1.5 400 Total Capacitance [pF] PD - Power Dissipation [mW] 500 300 200 100 f = 1MHz Ta = 25 1.0 0.5 0.0 0 0 25 50 75 100 125 150 175 0 200 5 10 Temperature [ ] 15 20 25 30 VR - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Figure 2. Total Capacitance Valid provided leads at a distance of 0.8mm from case are kept at ambient tem

Width=1us) 150 mA 2 A IO IFSM These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: DEVICE MARKING CODE: Fast Switching Device (TRR <4.0 nS) Device Type Device Marking TC1N4148WT TC1N4448WT TC1N914BWT E1 E2 E3 General Purpose Diodes Extremely Small SOD-523 Package Flat Lead SOD-523 Small Outline Plastic Package Surface Device Type Mounting RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Band Indicates Cathode Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF TRR Breakdown Voltage Reverse Leakage Current Forward Voltage Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A 0.62 0.72 TC1N4448WT, TC1N914BWT IF=5mA TC1N4448WT, TC1N4148WT IF=10mA 1.0 TC1N4448WT, TC1N914BWT IF=100mA 1.0 Volts IF=10mA IR=60mA 4 nS 4 pF RL=100 IRR=1mA C Capacitance VR=0V, f=1MHZ Number: DB-001 July 2011, Revision F Page 1 TC1N4148WT/TC1N444

48M) Value Units 500 mW -65 to +200 C +175 C Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA 2 A IFSURGE Peak Forward Surge Current L PD Parameter L : Logo DEVICE MARKING DIAGRAM (TC1N4448M / TC1N914BM) L xxxx Symbol DEVICE MARKING DIAGRAM TA = 25C unless otherwise noted These ratings are limiting values above which the serviceability of the diode may be impaired. L : Logo Device Code : TC1NxxxxM Specification Features: Fast Switching Device (TRR <4.0 nS) DO-34 Package (JEDEC DO-204) DEVICE MARKING DIAGRAM Through-Hole Device Type Mounting (TC1N4148M) Anode Cathode Hermetically Sealed Glass Compression Bonded Construction All external surfaces are corrosion resistant and leads are readily solderable ELECTRICAL SYMBOL Cathode indicated by polarity band Electrical Characteristics TA = 25C unless otherwise noted Parameter Symbol Limits Test Condition Min BV IR VF TRR Breakdown Voltage Reverse Leakage Current Forward Voltage Reverse Reco

4148M) Value Units 300 mW -65 to +150 C +150 C L Symbol DEVICE MARKING DIAGRAM TA = 25C unless otherwise noted L : Logo Operating Junction Temperature WIV Working Inverse Voltage 75 V DEVICE MARKING DIAGRAM IO Average Rectified Current 150 mA (TC1N4448M / TC1N914BM) IFM Non-repetitive Peak Forward Current Peak Forward Surge Current (Pulse Width = 1.0 second) 450 mA 2 A IFSURGE L xxxx TJ These ratings are limiting values above which the serviceability of the diode may be impaired. L : Logo Device Code : TC1NxxxxM Specification Features: Fast Switching Device (TRR <4.0 nS) DO-34 Package (JEDEC DO-204) Through-Hole Device Type Mounting Anode Cathode Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable ELECTRICAL SYMBOL RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics TA = 25C unless otherwise noted Parameter Symbol Limits Test Condition Min BV IR VF T

l Characteristics Parameter Symbol BV IR VF TRR TA = 25C unless otherwise noted Breakdown Voltage Reverse Leakage Current Forward Voltage Reverse Recovery Time Test Condition Limits Min IR=100A 100 IR=5A 75 Max Unit Volts VR=20V 25 nA VR=75V 5 A TC1N4448, TC1N914B IF=5mA TC1N4148, TC1N4148 IF=10mA 1.0 TC1N4448, TC1N914B IF=100mA 1.0 0.62 0.72 Volts IF=IR=10mA RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1MHZ March 2002 / A Page 1 TC1N4148/TC1N4448/TC1N914B (R) (R) TAK CHEONG SEM ICONDUCTOR Electrical Symbol Definition Symbol Typical Characteristics I Parameter (mA) IF BV Breakdown Voltage @ IR IR Reverse Leakage Current @ VR IR (V) VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (mV) VR BV VF V IR (nA) (A) Ordering Information Device Package Quantity TC1Nxxxx Bulk 10,000 TC1Nxxxx.TB Tape and Ammo 5,000 TC1Nxxxx.TR Tape and Reel 10,000 TC1Nxxxx Others (...contact Tak Cheong sales representatives) Axial-Lead Tape Packaging Standards This axial-lead compone

are readily solderable ELECTRICAL SYMBOL Cathode indicated by polarity band Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF Breakdown Voltage Reverse Leakage Current Forward Voltage TC1N4448, TC1N914B TC1N4148 TC1N4448, TC1N914B TRR Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A IF=5mA 0.62 0.72 IF=10mA 1.0 IF=100mA 1.0 Volts IF=10mA, VR=6V RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1MHZ October 2005 / B Page 1 TC1N4148/TC1N4448/TC1N914B (R) (R) TAK CHEONG SEM IC O N DU C TO R Electrical Symbol Definition Typical Characteristics I Symbol Parameter (mA) IF BV Breakdown Voltage @ IR IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (mV) VR BV IR (V) VF V IR (nA) (A) Ordering Information Device Package Quantity TC1Nxxxx Bulk 10,000 TC1Nxxxx.TB Tape and Ammo 5,000 TC1Nxxxx.TR Tape and Reel 10,000 TC1Nxxxx Others (...contact Tak C

iant Solder hot dip Tin (Sn) lead finish. Cathode indicated by polarity band Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Limits Test Condition Min BV IR VF Breakdown Voltage Reverse Leakage Current Forward Voltage TC1N4448, TC1N914B TC1N4148 TC1N4448, TC1N914B TRR Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A IF=5mA 0.62 0.72 IF=10mA 1.0 IF=100mA 1.0 Volts IF=10mA, VR=6V RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1MHZ October 2006 / C Page 1 TC1N4148/TC1N4448/TC1N914B (R) (R) TAK CHEONG SEM IC O N DU C TO R Package Outline Package Case Outline DO-35 DO-35 DIM Millimeters Inches Min Max Min Max A 0.46 0.55 0.018 0.022 B 3.05 5.08 0.120 0.200 C 25.40 38.10 1.000 1.500 D 1.53 2.28 0.060 0.090 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. October 2006 / C Page 2

t Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics TA = 25C unless otherwise noted Parameter Symbol Limits Test Condition Min BV IR VF Breakdown Voltage Reverse Leakage Current Forward Voltage TC1N4448, TC1N914B TC1N4148 TC1N4448, TC1N914B TRR Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A IF=5mA 0.62 0.72 IF=10mA 1.0 IF=100mA 1.0 Volts IF=10mA, VR=6V RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1M HZ Number: DB-036 Jan 2010 / G Page 1 TC1N4148/TC1N4448/TC1N914B TAK CHEONG TAK CHEONG (R) SE M ICOND UC TOR Typical Characteristics 500 400 f = 1MHz Ta = 25 Total Capacitance [pF] PD-Power Passipation [mW] 1.5 300 200 100 1.0 0.5 0.0 0 0 25 50 75 100 125 Tem perature [ ] 150 0 175 5 10 15 20 25 30 VR - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Figure 2. Total Capacitance Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature 60

l Characteristics Parameter Symbol BV IR VF TRR TA = 25C unless otherwise noted Breakdown Voltage Reverse Leakage Current Forward Voltage Reverse Recovery Time Test Condition Limits Min IR=100A 100 IR=5A 75 Max Unit Volts VR=20V 25 nA VR=75V 5 A TC1N4448, TC1N914B IF=5mA TC1N4148, TC1N4148 IF=10mA 1.0 TC1N4448, TC1N914B IF=100mA 1.0 0.62 0.72 Volts IF=IR=10mA RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1MHZ March 2002 / A Page 1 TC1N4148/TC1N4448/TC1N914B (R) (R) TAK CHEONG SEM ICONDUCTOR Electrical Symbol Definition Symbol Typical Characteristics I Parameter (mA) IF BV Breakdown Voltage @ IR IR Reverse Leakage Current @ VR IR (V) VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (mV) VR BV VF V IR (nA) (A) Ordering Information Device Package Quantity TC1Nxxxx Bulk 10,000 TC1Nxxxx.TB Tape and Ammo 5,000 TC1Nxxxx.TR Tape and Reel 10,000 TC1Nxxxx Others (...contact Tak Cheong sales representatives) Axial-Lead Tape Packaging Standards This axial-lead compone

olarity band Electrical Characteristics Parameter Symbol BV IR VF TRR TA = 25C unless otherwise noted Test Condition Breakdown Voltage Reverse Leakage Current Forward Voltage Limits Min IR=100A 100 IR=5A 75 Max Unit Volts VR=20V 25 nA VR=75V 5 A TC1N4448, TC1N914B IF=5mA TC1N4148, TC1N4148 IF=10mA 1.0 TC1N4448, TC1N914B IF=100mA 1.0 0.62 0.72 Volts IF=IR=10mA Reverse Recovery Time RL=100 4 nS 4 pF IRR=1mA C VR=0V, f=1MHZ Capacitance March 2002 / A 1 (R) TAK CHEONG SEMI C ON D UCTOR Electrical Symbol Definition Symbol Typical Characteristics I Parameter (mA) IF BV Breakdown Voltage @ IR IR Reverse Leakage Current @ VR BV VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (mV) VR IR (V) VF V IR (nA) (A) Ordering Information Device Package Quantity TC1NXXX Bulk 10,000 TC1NXXX Tape and Ammo 5,000 TC1NXXX Tape and Reel 10,000 TC1NXXX Others (...contact Tak Cheong sales representatives) Axial-Lead Tape Packaging Standards This axial-lead component's packaging requirements use in