NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM http://onsemi.com 30 VOLT DUAL SERIE

NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse

NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse

d. B8 M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel NSVBAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 April, 2019 - Rev. 12 1 Publication Order Number: BAT54SWT1/D BAT54SW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr Min Typ Max 30 - - -

d. B8 M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel NSVBAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 April, 2019 - Rev. 12 1 Publication Order Number: BAT54SWT1/D BAT54SW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr Min Typ Max 30 - - -