MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Volta

MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Volta

MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Volta

MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Volta

Gull) 1265/1 (TO--270--2) 1265/1 (TO--270--2) 1486/1 (TO--270 WB--4) 1486/1 (TO--270 WB--4) 1484/1 (TO--272 WB--4) 1484/1 (TO--272 WB--4) 375G/1 (NI--860C) 375D/1 (NI--1230) 375D/1 (NI--1230) 375E/1 (NI--1230S) 375E/1 (NI--1230S) 470 -- 1000 MHz, Class AB MW6S004NT1(18f) MW6S010NR1(18a) MW6S010GNR1(18a) MRFE6S9045NR1 (18a) MRFE6S9060NR1(18a) MRF6V3090NR1(18a)! MRF6V3090NR5(18p)! MRF6V3090NBR1(18a)! MRF6V3090NBR5(18p)! MRFE6P3300HR3(18i) MRF6VP3450HR6(18o) MRF6VP3450HR5(18p) MRF6VP3450HSR6(18o) MRF6VP3450HSR5(18p) U U U U U I I I I I/O I I I I 1--2000 450--1500 450--1500 880 880 470--860 470--860 470--860 470--860 470--860 470--860 470--860 470--860 470--860 Table 4. Cellular -- To 800 MHz Product Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/Style 4 PEP 6.5 CW 10 PEP 10 PEP 4 AVG 4 AVG 32 AVG 50 AVG 2--Tone 1--Tone 2--Tone 2--Tone W--CDMA W--CDMA W--CDMA W--CDMA 28 28 28 28 28 28 28 28 18/1960 23.5/900 18/960 18/960 19.9/960 19.9/960

MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VD

MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Volta

MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage

.23 0.23 -- -- 466/1 (PLD 1.5) 1265/1 (TO--270--2) 1265A/1 (TO--270--2 Gull) 1265/1 (TO--270--2) 1265/1 (TO--270--2) 375G/1 (NI--860C3) 375G/1 (NI--860C3) 375G/1 (NI--860C3) 375G/1 (NI--860C3) 375D/1 (NI--1230) 375E/1 (NI--1230S) 470 -- 1000 MHz, Class AB MW6S004NT1(18f) MW6S010NR1(18a) MW6S010GNR1(18a) MRFE6S9045NR1 (18a) MRFE6S9060NR1(18a) MRF377HR3(18i) MRF377HR5(18p) MRFE6P3300HR3(18i) MRFE6P3300HR5(18p) MRF6VP3450H(46a) MRF6VP3450HS(46a) U U U U U I/O I/O I/O I/O I I 1--2000 450--1500 450--1500 880 880 470--860 470--860 470--860 470--860 470--860 470--860 (18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 2Q08; b) 3

12 10/3550 25/3550 6.5 PLD--1.5 = Unmatched; I = Input; I/O = Input/Output. Power Ratio = 8.5 dB. (4)Peak--to--Average Freescale Semiconductor, Inc. RF Product Selector Guide 9 RF Cellular Infrastructure Table 1. 450-1000 MHz Frequency Band(3) MHz Product MW6S004NT1 AFT27S006NT1 AFT27S010NT1 MW6S010NR1 MW6S010GNR1 MW7IC915NT1 A2T08VD020N(2c) MD8IC925NR1 MD8IC925GNR1 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 A2I08H040N(2d) A2I08H040GN(2d) MRF8S7120NR3 MRF8S7170NR3 MRF8S7235NR3 MRF8P8300HR6 MRF8P8300HSR6 MRFE6S9045NR1 MRFE6S9060NR1 MRFE6S9125NR1 MRFE6S9125NBR1 MD8IC970NR1 MD8IC970GNR1 MRF8P9040NR1 MRF8P9040GNR1 MRFE6S9046GNR1 MWE6IC9080NBR1 MRF5S9080NBR1 MWE6IC9100NBR1 MRF8S9100HSR3 MRF8S9102NR3 MRF8S9120NR3 A2T07D160W04SR3 MRFE6S9160HSR3 MRF8S9170NR3 AFT09S200W02NR3 AFT09S200W02GNR3 AFT09S200W02SR3 MRF8S9200NR3 MRF8S9202GNR3 MRF8P9210NR3 AFT09S220--02N(2c) AFT09S220--02GN(2c) MRF8S9220HSR3 MRF8S9232NR3 A2T09VD250N(2d) MRF8S9260HSR3 AFT09S282NR3 A2T09VD300N(2d) MRF8P9300HSR6 U U U U U I I I/O I/O I/O I

cations. Devices are designed for 450-1000 MHz, 1450-2200 MHz, 2300-2690 MHz and 3400-3800 MHz frequency operation, supporting cellular standards such as LTE, W--CDMA/UMTS, GSM, EDGE, CDMA and TD--SCDMA. Table 1. 450-1000 MHz Frequency Band(3) MHz Product MW6S004NT1 AFT27S006NT1 AFT27S010NT1 MW6S010NR1 MW6S010GNR1 MW7IC915NT1 A2T08VD020NT1 MD8IC925NR1 MD8IC925GNR1 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 A2I08H040NR1 A2I08H040GNR1 MRF8S7120NR3 MRF8S7170NR3 MRF8S7235NR3 MRF8P8300HR6 MRF8P8300HSR6 MRFE6S9045NR1 MRFE6S9060NR1 MRFE6S9125NR1 MRFE6S9125NBR1 MD8IC970NR1 MD8IC970GNR1 MRF8P9040NR1 MRF8P9040GNR1 MRFE6S9046GNR1 MWE6IC9080NBR1 MRF5S9080NBR1 MWE6IC9100NBR1 MRF8S9100HSR3 MRF8S9102NR3 MRF8S9120NR3 A2T07D160W04SR3 MRFE6S9160HSR3 MRF8S9170NR3 AFT09S200W02NR3 AFT09S200W02GNR3 AFT09S200W02SR3 MRF8S9200NR3 MRF8S9202GNR3 MRF8P9210NR3 AFT09S220--02NR3 MRF8S9220HSR3 MRF8S9232NR3 A2T09VD250NR1 MRF8S9260HSR3 AFT09S282NR3 A2T09VD300NR1 (3)U U U U U U I I I/O I/O I/O I/O I/O I I I/O I/O I/O I/O I/O U U I I I/

E6P9220HR3 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9125NBR1 MRFE6S9125NR1 MRFE6S9160HSR3 MRFE6S9205HSR3 MRFE6VP8600HR5 MRFE6VP8600HR6 MRFE6VP8600HSR5 MRFG35003ANT1 MS1078 MS1281 MS1336 MS1337 MS1504 MS1505 MS1506 MS2267 MS2272 MT4S200T MT4S200U MT4S34U MV2109G MW6S004NT1 MW6S004NT1 MW7IC008NT1 MW7IC2020NT1 MW7IC2425GNR1 MW7IC2425GNR1 MW7IC2425NBR1 MW7IC2425NBR1 MW7IC2425NR1 MW7IC2425NR1 MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1 MW7IC3825GNR1 MW7IC3825NBR1 MW7IC3825NR1 MW7IC915NT1 MWE6IC9100NBR1 NESG2021M05 NESG2031M05 NESG2101M05 Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Microsemi Microse

E6P9220HR3 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9125NBR1 MRFE6S9125NR1 MRFE6S9160HSR3 MRFE6S9205HSR3 MRFE6VP8600HR5 MRFE6VP8600HR6 MRFE6VP8600HSR5 MRFG35003ANT1 MS1078 MS1281 MS1336 MS1337 MS1504 MS1505 MS1506 MS2267 MS2272 MT4S200T MT4S200U MT4S34U MV2109G MW6S004NT1 MW6S004NT1 MW7IC008NT1 MW7IC2020NT1 MW7IC2425GNR1 MW7IC2425GNR1 MW7IC2425NBR1 MW7IC2425NBR1 MW7IC2425NR1 MW7IC2425NR1 MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1 MW7IC3825GNR1 MW7IC3825NBR1 MW7IC3825NR1 MW7IC915NT1 MWE6IC9100NBR1 NESG2021M05 NESG2031M05 NESG2101M05 Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Microsemi Microse

ase station Base Station Base Station Base station Base station Base Station NXPRF14 95 Manufacturer type Manufacturer NXP type Product family Manufacturer type Manufacturer NXP type Product family MSC1450M MT4S200T MT4S200U MT4S34U MV2109G MW6IC2240N (2) MW6S004NT1 (1) MW7IC2725GNR1 MW7IC2725N MW7IC2725N MW7IC2725NB MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750N (3) MW7IC2750NR1 MW7IC3825GN MW7IC3825N MW7IC3825N (3) MW7IC3825NB MW7IC915N (1) NESG3032M14 NESG3032M14 PD55012-E PD55025-E PD55035-E PD57018-E PD57030-E PD57045-E PD57060-E PD57070-E PD85015-E PD85025C PD85025-E PD85035C PD85035-E PRF134 PRF134 PRF136 PRF136 PRF947B PRF947B PTF 180101S - 10 W PTF 191601E - 160 W PTF 210101M - 10 W PTF 210451E - 45 W PTF 210451F - 45 W PTF 240101S - 10 W PTF041501E-150W PTF041501E-150W PTF041501F-150W PTF041501F-150W PTF080101M-10W PTF080101M-10W PTF080101S-10W PTF080101S-10W PTF081301E-130W PTF081301E-130W PTF081301F-130W PTF081301F-130W PTF082001E-200W PTF082001E-200W PTF180101 PTF180101 PTFA 142401EL - 240 W

ax. Max. (VDC) (VDC) 40 20 40 20 40 20 40 20 25 20 Pkg. PLD-1.5 PLD-1.5 PLD-1.5 TO-272 PLD-1.5 Stock No. 16N1972 16N1973 34R2430 22M7859 16N1974 Price Each 1-9 7.24 7.40 6.25 5.65 7.17 7.33 15.47 20.19 6.72 6.87 1 to 2000 450 to 1500 880 to 960 880 to 960 MW6S004NT1 MW6S010NR1 MRFE6S9045NR1 MRFE6S9060NR1 4 10 45 60 68 68 66 66 12 12 12 12 PLD-1.5 TO-270 TO-270 TO-270 34R2431 34R2432 34R2428 34R2429 8.93 9.12 15.48 12.77 24.59 25.15 32.05 31.36 10 100 10 PLD-1.5 09P4207 74.22 75.84 13T4413 13T4415 24T5453 19T6330 19T6332 95M9599 89M2087 89M2089 111.62 114.08 111.62 114.08 241.80 136.20 361.61 209.96 361.61 209.96 21.88 --435.00 --435.00 324.00 RF LDMOS POWER TRANSISTORS - L-BAND 960 to 1400 MRF6V10010NR4 RF INDUSTRIAL, SCIENTIFIC, & MEDICAL POWER TRANSISTORS - HF/VHF GaAs AND SILICON RF TRANSISTORS Output Power (W) 8 3 8 35 8 RF LDMOS POWER TRANSISTORS - TV BROADCAST Package 16-SOIC 16-DIP 16-DIP 16-SOIC 16-SOIC 16-DIP 16-SOIC 18-SOIC Freq. Range (MHz) 135 to 175 400 to 520 400 to 520 400 to 520 4