LBAT54SWT1 Barrier Diodes 30 VOLTS DUAL SERIES SCHOTTKY AND BARRIER These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward DIODES voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed 3 * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc 1 2 SOT-323 (SC-70) ORDERING INFORMATION Device Package LBAT54SWT1 SOT-323 CATHODE ANODE 1 2 Shipping 3000/Tape & Reel 3 CATHODE/ANODE Preferred: devices are recommended choices for future use and best overall value. DEVICE MARKING LBAT54SWT1 = B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Symbol Reverse Voltage VR Forward Power Dissipation PF @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Value IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW

Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc LBAT54SWT1G 3 1 We declare that the material of product compliance with RoHS requirements. 2 SOT-323 (SC-70) CATHODE ANODE 1 ORDERING INFORMATION Device Marking Shipping LBAT54SWT1G B8 3000/Tape & Reel LBAT54SWT3G B8 10000/Tape & Reel 2 3 CATHODE/ANODE DEVICE MARKING LBAT54SWT1G= B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol Value VR PF IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW/C mA C C ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 A) Total Capacitance (V R = 1.0 V, f = 1.

Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc LBAT54SWT1G 3 1 We declare that the material of product compliance with RoHS requirements. 2 SOT-323 (SC-70) CATHODE ANODE 1 ORDERING INFORMATION Device Marking Shipping LBAT54SWT1G B8 3000/Tape & Reel LBAT54SWT3G B8 10000/Tape & Reel 2 3 CATHODE/ANODE DEVICE MARKING LBAT54SWT1G= B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol Value VR PF IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW/C mA C C ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 A) Total Capacitance (V R = 1.0 V, f = 1.

e Marking Device LRB715WT1G 3D VR (V) 40 STYLE VF IF (mA) 30 (A) (B) (C) Max (V) 0.37 (D) IR IF (mA) 1 (E) Max (A) 1.0 VF (V) 10 3 (F) Style A 3 2 1 1 2 Package 10. SC-70/ SOT-323 Surface Mount Schottky Diodes Device Marking Device LBAT54AWT1G LBAT54CWT1G LBAT54SWT1G LBAT54WT1G LRB706F-40T1G LRB715FT1G LRB717FT1G B7 5C B8 B4 3J 3D 3E STYLE VR (V) 30 30 30 30 40 40 40 (A) VF IF (mA) 200 200 200 200 30 30 30 (B) (C) Max (V) 0.4 0.4 0.4 0.4 0.37 0.37 0.37 (D) IR IF (mA) 10 10 10 10 1 1 1 (E) Max (A) 2 2 2 2 1.0 1.0 1.0 VF (V) 25 25 25 25 10 10 10 Style B A C E C A B 3 (F) 3 2 2 1 1 Package 11. SOT-23/ TO-236AB Surface Mount Schottky Diodes Device Marking Device VR (V) IF (mA) VF@IF (V) IR@VR (mA) (uA) (V) Style LBAS40-05LT1G 45 200 40 0.38 1.0 0.2 30 A LBAS70-05LT1G EH 70 70 0.41 1.0 0.1 50 A LRB425DLT1G D3L 100 45 0.55 100 30 10 A LRB491DLT1G D2E 1000 25 0.45 1000 200 20 E STYLE (A) (B) (C) (D) (E) (F) 3 3 2 2 1 1 Package 13 Leshan Radio Company, Ltd. http//:www.lrc.cn 11.1 SOT-23/ TO-236AB Surface