0 0 0 0 0 0 1 1 0 0 Email: sales@szshouhe.com SHENZHEN SHOUHE TECHNOLOGY CO., LTD. IRF630NSTRRPBFDiscrete Hexfet D2PAK IRF630NSTRLPBF Discrete Hexfet D2PAK IRF630NSTRL Discrete Hexfet D2PAK IRF630NSTRR Discrete Hexfet D2PAK IRF630NS Discrete Hexfet D2PAK IRF630STRRPBF Discrete Hexfet D2PAK IRF630STRLPBF Discrete Hexfet D2PAK IRF630SPBF Discrete Hexfet D2PAK IRF630STRL Discrete Hexfet D2PAK IRF630STRR Discrete Hexfet D2PAK IRF630S Discrete Hexfet D2PAK IRF634PBF Discrete Hexfet TO220 IRF634 Discrete Hexfet TO220 IRF634NPBF Discrete Hexfet TO220 IRF634N Discrete Hexfet TO220 IRF634NLPBF Discrete Hexfet D2PAK IRF634NL Discrete Hexfet IRF634NSTRRPBFDiscrete Hexfet D2PAK D2PAK IRF634NSPBF Discrete Hexfet IRF634NSTRLPBF Discrete Hexfet IRF634NSTRR Discrete Hexfet D2PAK D2PAK D2PAK IRF634NS D2PAK Discrete Hexfet http://www.szshouhe.com TEL: 0755-8380 8450 200V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 200V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 200V

al surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a IRF630S IRF630STRLa IRF630STRRa SiHF630S SiHF630STLa SiHF630STRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 C TC = 100 C Currenta ID IDM 5.7 Linear Derating Factor (PCB Mount)e 0.025 Repetitive Avalanche Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C A 36 0.59 Currenta V 9.0 Linear Derating Factor Single Pulse Avalanche Energyb UNIT W/C EAS 250 mJ IAR 9.0 A EAR 7.4 mJ PD 74 3.0 W * Pb containing terminations are not RoHS compli

nt applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb SMD-220 SMD-220 SMD-220 IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a IRF630S IRF630STRLa IRF630STRRa SiHF630S SiHF630STLa SiHF630STRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 VGS at 10 V Continuous Drain Current TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor Linear Derating Factor (PCB 5.7 A 36 0.025 Single Pulse Avalanche Energyb V 9.0 0.59 Mount)e UNIT W/C EAS 250 Currenta IAR 9.0 A Repetitive Avalanche Energya EAR 7.4 mJ Repetitive Avalanche Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 mJ W * Pb containing terminations are not RoHS complian

nt applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb SMD-220 SMD-220 SMD-220 IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a IRF630S IRF630STRLa IRF630STRRa SiHF630S SiHF630STLa SiHF630STRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 VGS at 10 V Continuous Drain Current TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor Linear Derating Factor (PCB 5.7 A 36 0.025 Single Pulse Avalanche Energyb V 9.0 0.59 Mount)e UNIT W/C EAS 250 Currenta IAR 9.0 A Repetitive Avalanche Energya EAR 7.4 mJ Repetitive Avalanche Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 mJ W * Pb containing terminations are not RoHS complian

lications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb SMD-220 SMD-220 SMD-220 IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a IRF630S IRF630STRLa IRF630STRRa SiHF630S SiHF630STLa SiHF630STRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 VGS at 10 V Continuous Drain Current TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor Linear Derating Factor (PCB 5.7 A 36 0.025 Single Pulse Avalanche Energyb V 9.0 0.59 Mount)e UNIT W/C EAS 250 Currenta IAR 9.0 A Repetitive Avalanche Energya EAR 7.4 mJ Repetitive Avalanche Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 mJ W * Pb containing terminations are not RoHS complian

to 2.0 W in a typical surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a Lead (Pb)-free Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM UNIT V 9.0 5.7 A 36 Linear Derating Factor 0.59 Linear Derating Factor (PCB Mount)e 0.025 W/C Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A EAR 7.4 mJ Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 W * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc Document N

al surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a IRF630S IRF630STRLa IRF630STRRa SiHF630S SiHF630STLa SiHF630STRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 C TC = 100 C Currenta ID IDM 5.7 Linear Derating Factor (PCB Mount)e 0.025 Repetitive Avalanche Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C A 36 0.59 Currenta V 9.0 Linear Derating Factor Single Pulse Avalanche Energyb UNIT W/C EAS 250 mJ IAR 9.0 A EAR 7.4 mJ PD 74 3.0 W * Pb containing terminations are not RoHS compli

to 2.0 W in a typical surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a Lead (Pb)-free Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM UNIT V 9.0 5.7 A 36 Linear Derating Factor 0.59 Linear Derating Factor (PCB Mount)e 0.025 W/C Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A EAR 7.4 mJ Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 W * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc Document N

surface-mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) SiHF630S-GE3 IRF630SPbF D2PAK (TO-263) SiHF630STRL-GE3 a IRF630STRLPbF a D2PAK (TO-263) SiHF630STRR-GE3 a IRF630STRRPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current SYMBOL VDS VGS VGS at 10 V TC = 25 C TC = 100 C ID IDM Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e EAS Single pulse avalanche energy b Repetitive avalanche current a IAR Repetitive avalanche energy a EAR Maximum power dissipation TC = 25 C PD TA = 25 C Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c dv/dt Operating junction and storage temperature range TJ, Tstg for 10 s Soldering recommendations (peak temperature) d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ =

to 2.0 W in a typical surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a Lead (Pb)-free Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM UNIT V 9.0 5.7 A 36 Linear Derating Factor 0.59 Linear Derating Factor (PCB Mount)e 0.025 W/C Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A EAR 7.4 mJ Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 W * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc Document N

to 2.0 W in a typical surface mount application. G D S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a Lead (Pb)-free Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM UNIT V 9.0 5.7 A 36 Linear Derating Factor 0.59 Linear Derating Factor (PCB Mount)e 0.025 W/C Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A EAR 7.4 mJ Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C PD 74 3.0 W * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc Document N

surface-mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) SiHF630S-GE3 IRF630SPbF D2PAK (TO-263) SiHF630STRL-GE3 a IRF630STRLPbF a D2PAK (TO-263) SiHF630STRR-GE3 a IRF630STRRPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current SYMBOL VDS VGS VGS at 10 V TC = 25 C TC = 100 C ID IDM Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e EAS Single pulse avalanche energy b Repetitive avalanche current a IAR Repetitive avalanche energy a EAR Maximum power dissipation TC = 25 C PD TA = 25 C Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c dv/dt Operating junction and storage temperature range TJ, Tstg for 10 s Soldering recommendations (peak temperature) d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ =