GSBAV99T Switching Diode Features 3 For general purpose switching applications 2 Fast switching speed High conductance 1 Schematic Diagram SOT-523 Absolute Maximum Ratings (TA=25C unless otherwise noted Symbol Value Unit Reverse Voltage VR 85 V Forward Current IF 75 mA IFSM 2.0 A PD 150 mW RJA 833 C/W TJ 150 C Parameter Non-Repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range TSTG -55 to +150 C Electrical Characteristics (TA=25C unless otherwise noted Parameter Symbol Test conditions Min Max Unit V(BR) IR= 1A 85 - V IR1 VR=75V - 2 A IR2 VR=25V - 0.03 A Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=150mA - 715 855 1000 1250 mV Diode Capacitance CD VR=0 - 1.5 pF Reverse Recovery Time t rr IF=IR=10mA Irr=0.1xIR,RL=100 - 4 ns Reverse Breakdown Voltage Reverse Voltage Leakage Current f=1MHz 1/3 GSBAV99T Switching Diode Typical Electrical Characteristic Curves Forward 300 Characteristics (nA) T=