ES1DSR Features * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * 1 Amp Soft Recovery Rectifier 200 Volts Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1DSR ES1D 200V 140V DO-214AC (SMAJ) (High Profile) H Cathode Band 200V J Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 1.0A 30A A TJ = 75C E D F 8.3ms, half sine C B G DIMENSIONS VF .97V IFM = 1.0A; TJ = 25C* IR 5A 30A TJ = 25C TJ = 125C DIM A B C D

ES1DSR Features * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * 1 Amp Soft Recovery Rectifier 200 Volts Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1DSR ES1D 200V 140V DO-214AC (SMAJ) (High Profile) H Cathode Band 200V J Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 1.0A 30A A TJ = 75C E D F 8.3ms, half sine C B G DIMENSIONS VF .97V IFM = 1.0A; TJ = 25C* IR 5A 30A TJ = 25C TJ = 125C DIM A B C D

ES1DSR Features * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * 1 Amp Soft Recovery Rectifier 200 Volts Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1DSR ES1D 200V 140V DO-214AC (HSMA) (High Profile) H Cathode Band 200V J Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 1.0A 30A A TJ = 75C E D F 8.3ms, half sine C B G DIMENSIONS VF .97V IFM = 1.0A; TJ = 25C* IR 5A 30A TJ = 25C TJ = 125C DIM A B C D

ES1DSR Features * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * 1 Amp Soft Recovery Rectifier 200 Volts Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1DSR ES1D 200V 140V DO-214AC (SMAJ) (High Profile) H Cathode Band 200V J Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 1.0A 30A A TJ = 75C E D F 8.3ms, half sine C B G DIMENSIONS VF .97V IFM = 1.0A; TJ = 25C* IR 5A 30A TJ = 25C TJ = 125C DIM A B C D