...................................... 64 9.4 Ambient Light Channel D+E ......................................................................................................................................................... 64 9.5 DC Light Compensation (BP104FS) ............................................................................................................................................. 64 9.6 DC Light Compensation (SFH2701) ............................................................................................................................................. 64 9.7 DC Light Compensation (SFH2400) ............................................................................................................................................. 65 9.8...................................................................................................................................................................................................... 65 3901075308 Rev 001 Page 3 of 72 Da

S: sultabie for vapor-phase and Spectral Sensitivity Range | a 780 to 1100 S=10% of Sax ee bck ony in Radiant Sensitive Area A 4.84 mm? , * Package: black epoxy res - = 2.20x 2. BP104F: 0.200" (5.08 mm) lead spacing Radiant Sensitive Area Lx W 2.20 | mm ~ BP104FS: surface mount package Distance Chip Surface A APPLICATIONS to Case Surface, Os * IR remote control of stereos and TVs, BP104FS 03 sauip tape recorders, dimmers, various Half Angle ; ) Dag. * Photointerrupters Dark Current ln 2 ($30) nA Va=t0V Maxi Rati Spectral Sensitivity S, 0.70 AW. aximum Ratings tum Yield 090 | lectrons Operating/Storage Temperature Quantum Yie a sections | Range (Top. Tstg) = Reverse Voltage (Va) Open Crest Voltage Vo oe (2250) | mV E,=0.5 mWiem@ Power Dissipation (Pro7) Ta=25C ou... 150 mw__[ Short Circuit Current Igo pA Rise and Fall Time, tr tf | 20 ns R.=50 @, Vass V, Photocurrent A=850 nm, ip=800 pA Forward Voltage Ve 1.3 v Ir=100 mA, E=0 Capacitance Co 48 pF eRe V, f=1 MHz, =0 Temperature Coeffic

Mftr. 206259 Mftrs. Price Each List No. Order Code 1+ 25+ 100+ 250+ BPW34 BPW34-B 104-5425 121-2739 BPW34-FA BPW34S 121-2740 121-2745 BPW34FS BPW41N SFH213 121-2747 104-5426 121-2761 SFH213-FA SFH206K SFH203P 121-2763 121-2741 121-9691 SFH203PFA SFH203-FA BP104FS-Z 121-2742 121-2743 122-6436 122-6437 1.15 3.58 0.58 0.60 0.61 1.02 0.41 0.46 0.69 0.71 0.58 0.43 0.68 0.99 0.85 3.01 0.48 0.50 0.52 0.69 0.35 0.38 0.59 0.68 0.49 0.38 0.57 0.82 0.62 2.88 0.38 0.41 0.44 0.56 0.30 0.28 0.47 0.63 0.38 0.34 0.49 0.70 0.55 2.75 0.36 0.35 0.38 0.46 0.26 0.27 0.45 0.56 0.37 0.29 0.43 0.62 Photodiode Detectors - Sealed Metal Package IPL10040 BPW21R Optoelectronics, Solid State Illumination & Displays I Very short switching time (typ. 5ns) I SMT package suitable for vapor phase and IR reflow soldering I Especially suitable for applications from 400nm to 1100nm (SFH2400-Z) and of 880nm (SFH 2400FA) Spectral Range Spectral min, max (nm) Responsivity RO -14 400, 1100 750, 1100 2.9 x 10 2.9 x 10-14 BPX65, IPL10020 (

Use as Photodiode or Photovotitaic Cell N-Si Material: Anode=Front Contact, Cathode=Back Contact Low Capacitance Applications IR Remote Control - IR Sound Transmission - Reflective Switches Package: Black Epoxy Resin BP104F: 0.200" (5.08 mm) Lead Spacing BP104FS: Surface Mount Package * Cathode Marking: Projection on Solder Tab Formerly BP 104 Soldering Temperature (2 mm from case bottom), (Ts) ts3 5 Reverse Voltage (Vp) Power Dissipation (Pyo7) Ta=25C Characteristics (T,=25C, 1=950 nm) Parameter Symbol Photosensitivity (V_=5 Vv, Ee=1 mWi/cm2) $s Maximum Sensitivity Wavelength ASmax Photosensitivity Spectral Range (S=10% of Syyax) ry Radiant Sensitive Area A Radiant Sensitive Area Dimensions LxWw Distance, Chip Surface to Case Surface H Half Angle 9 Dark Current (Vp=10 V) Ip Spectral Sensitivity Sy Quantum Yield n Open Circuit Voltage (E,=0.5 mW/cm?) Vo Short Circuit Current (E,=0.5 mWicm2) Photocurrent Rise and Fall Time 10% to 90%, and 90% to 10% of Final Value (R,=50 Q, Vp=5 V, 4=850 nm, Ip=B

..1100 | 10 | Q62702-P1605 | 28. . . Q|*' ne ce eee | EEE OSES e& BPW 34S +60 265x265 | 80(250) | | 2(<30) 400...1100 | 10 Q62702-P1602 | 27 | | oe 1 all : ig . . L 2 Hoes i - re eee eee | a __ SMT-PIN-Fotodioden mit Filter SMT-PIN photodiodes with filter BP104FS | +60 22x22 34 (> 25) 2(<30) , 800... 1100 | 10 Q62702-P1646 | 28 DP BPW34FS_ | +60 2.65= 2.65 | 50 (240) 2 (< 40) 800... 1100 | 10 Q62702-P1604 & BPW 34 FAS | +60 265x265 '50(240) | | 2(<30) 740...1100 10 Q62702-P463 27 | 3 | i . | ae | - __ ce 6.2 SMT-Fototransistoren 6.2 SMT-Phototransistors "Package | Type Radiant | Ice (= 950m, | Veeo liom sd ny SS**dC dering code | Fig, (* vorher) sensitive E, = 0.5 mWicm*, (ig = 1mA, (* formerly) area | Vee = V) Veo = 5V, RL = 1 kQ} deg. mm? mA Vv nam HS SFH 320 +60 0.045 >16 35 420... 1100 | - Q62702-P961 hs SFH 320-2 16... 32 6 Q62702-P389 A SFH 320-3 25... 50 7 Q62702-P390 TOPLED* SFH 320-4 ' > 40 8 Q62702-P1606 SFH 320FA | +60 0.045 > 16 35 740...1100 | - Q62702-P988 (*SFH 320 F) | 29 SFH 320

, = 1 mWierm? | RL = 50 Q) "a= SV) deg. | mm? pA nm ns SMT PIN Fotodioden SMT-PIN photodiodes | BP 1048 +60 | 2.2x2.2 55 (240) | | 400... 1100] 10 311 Oo _ jo (BPW 34S +60 | 2.65x 2.65 | 80(250) |S | 400... 10 323 i *, | 1100 SMT PIN Fotodioden mit Filter BP104FS [+60 [22x22 | 34 (225) 800 ... 1100] 10 306 SMT-PIN photodiodes with filter +60 | 2.65 x 2.65 | 50 (2 40) 800 ... 1100] 10 331 BPW 34 FS y BPW 34 FAS | +60 | 2.65 x 2.65 } 50 (2 40) 740 ... 1100] 10 335 LE Semiconductor Group 23SIEMENS SMT - Fotodetektoren | NEU Tae =25C Package Type | (* vorher) | (* formerly) SMT-Fototransistoren [srnsaoa | _ SFH 320 FA (*SFH 320 F) SFH 320 FA-2 | SFH 320 FA-3 CSFH. 320 0 F-3) ao SFH 320 FA-4 ((SFH 320 320 F-4) SFH 325 SFH 325-2 SFH 325-3 | SFH 325-4 SFH 325 FA - (*SFH 325 F) 5 Ae Nc SFH 325 FA-2 (*SFH 325 F-3) ce 325 FA-3 SFH 325 FA-4 | CSF 325 4) | Semiconductor Group SFH320 | +60 | 60 Radiant sensitive area 0.045 Typeniibersicht Selector Guide SMT - Photodetectors [NEW] Ty = 25C loce Aro tal Page (A