BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR a FULLY MOLDED ISOLATED PACKAGE a 2000 V DC ISOLATION(U.L. COMPLIANT) APPLICATIONS a GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD24iGFP is silicon epitaxial-base NPN transistor mounted in TQ-220FP tully molded isolated package. It is inteded for power linear and switching applications. TO-220FP INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B FO(3) SC05960 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VceR Collector-Base Voltage (Ree = 100 0) 115 V VcEo Gollector-Emitter Voltage (lp = 0) 100 Vv VeEBO Emitter-Base Voltage (Ic = 0) 5 Vv Ic Collector Current 3 A lcm Collector Peak Gurrent 5 A IB Base Current 1 A Prot Total Dissipation at Te < 25 C 15 Ww Tsig Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. January 1998 1/4 BD241CFP THERMAL DATA Rihj-case | Thermal Resistance Junction-case Max | 8.4 Ciw | ELECTRICAL CHARACTERISTICS (

CROSS REFERENCE Industry standard BD214-80 BD220 BD221 BD222 BD223 BD224 BD225 BD226 BD227 BD228 BD229 BD230 BD231 BD232 BD233 BD234 BD235 BD236 BD237 BD238 BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C BD241 BD241A BD241B BD241BFI BD241BFP BD241C BD241CFP BD242 BD242A BD242B SGS-THOMSON replacement SGS-THOMSON nearest preferred BD912 BD537 BD535 BD535 BD538 BD534 BD536 BD179 BD234 BD179 BD236 BD179 BD238 MJE340 BD235 BD234 BD235 BD236 BD237 BD238 BD241A BD241A BD241B BD239C BD242B BD242B BD242B BD242C BD241A BD241A BD241B BD241BFI BD241BFP BD241C BD241CFP BD242B BD242B BD242B Industry standard BD242BFI BD242BFP BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B BD244C BD245 BD245A BD245B BD245C BD246 BD246A BD246B BD246C BD249 BD249A BD249B BD249C BD250 BD250A BD250B BD250C BD253 BD253A BD253B BD253C BD262 BD262A BD262B BD263 BD263A BD263B BD264 SGS-THOMSON replacement SGS-THOMSON nearest preferred BD242BFI BD242BFP BD242C BD243B BD243B BD243B BD243C BD244B BD244B BD244B