BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage -- * * * *ON Semiconductor Preferred Device VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIII

BD241C NPN power transistors Features . NPN transistors Applications Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD242A and BD242C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging BD241A BD241C BD241A BD241C TO-220 TO-220 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 BD241A BD241C Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Unit BD241A BD241C VCER Collector-emitter voltage (RBE = 100) 70 115 V VCEO Collector-emitter voltage (IB = 0) 60 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 3 A Collector peak current (tp < ms) 5 A Base current 1 A PTOT Total dissipation at Tcase = 25C 40 W Tstg Stora

BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage -- VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C * High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package *Motorola Preferred Device 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIII

BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80-100 VOLTS 40 WATTS Features *Collector-Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc *Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C *High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc *Compact TO-220 AB Package *Epoxy Meets UL94 V-0 @ 0.125 in *ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V *Pb-Free Packages are Available* MARKING DIAGRAM IIIIIIIIIIIIIIIIIII IIIIIIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIII III IIII IIII III IIIIIIIII III IIII IIII III IIIIIIIII III IIII IIII III IIII IIII IIIIIIIII III IIIIIII III IIIIIIIII III IIIIIII III IIIIIIIII III IIIIIII III IIIIIIIII III IIIIIII III IIIIIIIII III I

ANSYS FLECTRONIES LIMITED Designed for Complementary Use with the BD242 Series 40 W at 25C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available absolute maximum ratings BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD241 55 Collector-emitter voltage (Rpg = 100 Q) BD241A VceR vo Vv BD241B 90 BD241C 115 BD241 45 Collector-emitter voltage (lc = 30 mA) BD241A VcEo 60 Vv BD241B 80 BD241C 100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo 3 A Peak collector current (see Note 1) lom 5 A Continuous base current lB 1 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 40 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (se

BD379 BD380 MJE210 BD787 BD788 BD787 BD788 BD789 BD790 3-592 3-194 3-194 3-194 3-194 3-198 3-198 2N6035 BD243B BD244B BD243B BD244B 2N3716 2N3792 MJE2955T 3-178 3-178 3-194 3-194 3-194 3-194 3-12 3-25 3-592 3-592 -- -- 3-2 3-628 BD240C BD241 BD241A BD241B BD241C BD242 BD242A BD241B BD241B BD241B BD241C BD242B BD242B 3-873 3-174 3-174 3-174 3-174 3-174 3-174 BD385 BD385-1 BD385-2 BD385-5 BD385-8 BD386 BD386-1 MJE181 MJE181 MJE181 MJE181 MJE181 MJE171 MJE171 3-589 3-589 3-589 3-589 3-589 3-589 3-589 BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD242B BD242C BD243B BD243B BD243B BD243C BD244B 3-174 3-174 3-178 3-178 3-178 3-178 3-178 BD386-2 BD386-5 BD386-8 BD387 BD387-1 BD387-2 BD387-5 MJE171 MJE171 MJE171 MJE182 MJE182 MJE182 MJE182 3-589 3-589 3-589 3-589 3-589 3-589 3-589 BD244A BD244B BD244C BD249C BD250C BD262 BD262A BD244B BD244B BD244C BD249C BD250C BD678 BD680 3-178 3-178 3-178 -- -- 3-190 3-190 BD387-8 BD388 BD388-1 BD388-2 BD388-5 BD388-8 BD389 MJE182 MJE172 MJE172 MJE172 M

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80-100 VOLTS 40 WATTS Features * * * * High Current Gain - Bandwidth Product Compact TO-220 AB Package Epoxy Meets UL94 V-0 @ 0.125 in These Devices are Pb-Free and are RoHS Compliant* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Symbol BD242B BD241C BD242C Collector-Emitter Voltage VCEO 80 100 Vdc Collector-Emitter Voltage VCES 90 115 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 3.0 Adc Rating Collector Current -Continuous Co

medium power linear and switching applications. They are mounted in Jedec TO-220 plastic package Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VEBO IC IB PT Ratings BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (IB = 0) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Emitter-Base Voltage (IC = 0) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A IC BD241B/BD242B BD241C/BD242C Collector Current BD241/BD242 BD241A/BD242A ICM BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Base Current BD241B/BD242B BD241C/BD242C BD241/BD242 @ Tamb BD241A/BD242A = 25 C BD241B/BD242B BD241C/BD242C Power Dissipation BD241/BD242 @ Tcase BD241A/BD242A = 25 C BD241B/BD242B BD241C/BD242C COMSET SEMICONDUCTORS Value Unit 45 60 80 100 55 70 90 115 V V 5.0 V 3 A 5 1 A 2 Watts 40 Watts 1/4 NPN BD241, A, B, C

BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS 40 WATTS * Collector-Emitter Saturation Voltage - * * * * * VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Epoxy Meets UL94, V-0 @ 0.125 in. ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V MARKING DIAGRAM IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIII IIII IIII I III IIIIIIII IIII IIII IIII IIII I III IIIIIIII IIII IIII IIII IIII IIIIIIII IIII IIIIIII IIII IIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII II

BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage -- * * * *ON Semiconductor Preferred Device VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIII

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80-100 VOLTS 40 WATTS Features * Collector-Emitter Saturation Voltage - VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C * High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package * Epoxy Meets UL94 V-0 @ 0.125 in * ESD Ratings: Human Body Model, 3B u 8000 V MARKING DIAGRAM Machine Model, C u 400 V IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII

BD241C * PNP BD242B . . . designed for use in general purpose amplifier and switching applications. BD242C * * Collector-Emitter Saturation Voltage -- * * * *ON Semiconductor Preferred Device VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min.) BD242B = 100 Vdc (Min.) BD241C, BD242C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIII

0/1000 BUX85 450/1000 MJE18002 709 709 709 279 30 0.1 3.5 1.4 1.0 4.0 50 14/34 0.2 3.0 (Note 5.) 0.17 (Note 5.) 1.0 12 typ 40 313 505 60 TIP31A TIP32A 25 min 1.0 0.6 typ 0.3 typ 1.0 3.0 40 729 80 TIP31B TIP32B 25 min 1.0 0.6 typ 0.3 typ 1.0 3.0 40 729 100 BD241C BD242C 25 min 1.0 3.0 40 157 TIP31C TIP32C 25 min 1.0 0.6 typ 0.3 typ 1.0 3.0 40 729 D44C12 D45C12 40/120 0.2 1.0 40 typ 30 320 6/30 3.0 3.0 0.7 3.0 4.0 60 468 80 400/700 5.0 @ IC Amp fT MHz Min tf s Max TIP50 400/700 4.0 hFE Min/Max ts s Max 400 100 3.0 PNP Resistive Switching MJE13005 60 TIP120 (Note 4.) TIP125 (Note 4.) 1k min 3.0 1.5 typ 1.5 typ 3.0 4.0 (Note 3.) 65 80 TIP121 (Note 4.) TIP126 (Note 4.) 1k min 3.0 1.5 typ 1.5 typ 3.0 4.0 (Note 3.) 65 TIP122 (Note 4.) TIP127 (Note 4.) 1k min 4.0 (Note 3.) 75 100 3.0 1.5 typ 1.5 typ 4.0 715 715 715 250 2N6497 10/75 2.5 1.8 0.8 2.5 5.0 80 400/700 BUL45 14/34 0.3 1.7 (Note 5.) 0.15 (Note 5.) 1.0 12 typ 75 1.7 0.15 1.0 450/1000 MJE18004 14/34 0.3 MJE18004D2* 133 296 13 75 522 512 3. |hFE| @

BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80-100 VOLTS 40 WATTS Features * Collector-Emitter Saturation Voltage - VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C * High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package * Epoxy Meets UL94 V-0 @ 0.125 in * ESD Ratings: Human Body Model, 3B u 8000 V MARKING DIAGRAM Machine Model, C u 400 V IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIII IIIIIIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIIIIII III IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIIIIII III IIIIIIIIIII

BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS 40 WATTS * Collector-Emitter Saturation Voltage - * * * * * VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Epoxy Meets UL94, V-0 @ 0.125 in. ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V MARKING DIAGRAM IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIII IIII IIII I III IIIIIIII IIII IIII IIII IIII I III IIIIIIII IIII IIII IIII IIII IIIIIIII IIII IIIIIII IIII IIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII II