39 2N5339 2N5339 2N5339 BUV20 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 2N5884 2N5884 2N5339 BFX34 BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C 2N4920 2N4920 2N4920 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 1/35 Bipolar Transistors Cross Reference INDUSTY STANDARD 2N5037 2N5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N5241 2N5264 2N5284 2N5285 2N5293 2N5294 2N5295 2N5297 2N5298 2N5298 2N5301 2N5302 2N5303 2N5333 2N5334 2N5335 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348 2N5349 2N5386 2N5387 2N5388 2N5389 2N5415 2N5416 2N5466 2N5467 2/35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BUX48A 2N5191 2N5191 2N5192 2N5193 2N5195 2N5195 BUX48A BUX48A BUX98 2N5339 2N5339 TIP31C TIP31C TIP31C TIP31C TIP31C TIP31C 2N5886 2N5886 2N5886 B

5038 2N5039 2N5068 2N5069 2N5083 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2 / 47 SGS-THOMSON replacement SGS-THOMSON nearest preferred BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C BD238 BD238 BD238 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BFX34 Industry standard 2N5157 2N5190 2N5191 2N5192 2N5193 2N5194 2N5195 2N5240 2N5241 2N5264 2N5284 2N5285 2N5293 2N5294 2N5295 2N5297 2N5298 2N5298 2N5301 2N5302 2N5303 2N5333 2N5334 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348 2N5349 2N5386 2N5387 2N5388 2N5389 2N5415 2N5416 2N5466 SGS-THOMSON replacement SGS-THOMSON nearest preferred BUX48A 2N5191 2N5191 2N5192 2N5195 2N5195 2N5195 BUX48A BUX48A BUX98A 2N5339 2N5339 TIP31C TIP31C TIP31C TIP31C TIP31C TIP31C 2N5886 2N5886 2N5886 BSS44 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 2N5038 2N6547 2N6547 2N6547 2N5415 2N5416 BUX48A BIPOLAR TRANSIS

SGS-THOMSON SGS-THOMSON PAGE STANDARD | REPLACEMENT | NEAREST PREFERRED STANDARD | REPLACEMENT | NEAREST PREFERRED 2N4919 2N4920 x 2N5333 BSS44 197 2N4920 2N4920 k 2N5334 2N5339 93 2N4921 BD235 135 2N5336 2N5339 93 2N4922 BD235 135 2N5337 2N5339 93 2N4923 BD237 135 2N5338 2N5339 93 2N4998 2N5339 93 2N5339 2N5339 93 2N5000 2N5339 93 2N5346 2N5339 93 2N5002 2N5339 93 2N5347 2N5339 93 2N5004 2N5339 93 2N5348 2N5339 93 2N5034 2N3055 77 2N5349 2N5339 93 2N5035 2N3055 77 2N5386 2N5038 83 2N5036 2N3055 77 2N5387 2N6547 * 2N5037 2N3055 77 2N5388 2N6547 * 2N5038 2N5038 83 2N5389 2N6547 * 2N5039 2N5038 83 2N5415 2N5415 95 2NS068 BDW51C 169 2N5416 2N5416 95 2N5069 BDW51C 169 2N5466 BUX48A 475 2N5083 2N5339 93 2N5467 BUX48A 475 2N5085 2N5339 93 2N5477 2N5339 93 2N5148 2N5339 93 2N5478 2N5339 93 2N5150 2N5339 93 2N5479 2N5339 93 2N5152 2N5339 93 2N5480 2NS339 93 2N5153 BSS44 197 2N5490 MJE3055T 655 2N5154 2N5154 85 2N5491 MJE3055T 655 2N5157 BUX48A 475 2N5492 BD707 159 2N5190 2N5191 87 2N5493 BD243B 145 2N519

BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications 3 1 SOT-32 (TO-126) Description The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Table 1. 2 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging BD235 BD235 SOT-32 Tube BD237 BD237 SOT-32 Tube June 2009 Doc ID 4189 Rev 3 1/9 www.st.com 9 Absolute maximum ratings 1 BD235, BD237 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1 k) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms) 6 A P

BD237 NPN power transistors Features . NPN transistors Applications Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Table 1. 2 1 SOT-32 (TO-126) Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD235 BD237 BD235 BD237 SOT-32 SOT-32 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1K) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms) 6 A PTOT Total dissipation at Tcase = 25C 25

BD237 (NPN), BD234 (PNP), BD238 (PNP) Preferred Devices Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features 2.0 AMPERES POWER TRANSISTORS 25 WATTS * DC Current Gain - * * * http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc Epoxy Meets UL 94 V0 @ 0.125 in ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIII III IIII IIII III IIIIIIIIII III IIII IIII III IIIIIIIIII III IIII IIII III IIIIIIIIII III IIII IIIIIII IIII III IIIIIIIIII III IIIIIII III IIIIIIIIII III IIIIIII III IIIIIIIIII III IIIIIII III IIIIIIIIII III IIIIIII III III IIIIIII III IIIIIIIIII IIIIIIIIII III IIIIIII III IIIIIIIIII III IIIIIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIII III IIIIIIIIIIII III IIIII III IIIIIIIIIIII III IIIII III TO-225 CASE 77 STYLE 1 MAXIMUM RATINGS Symbol BD234 BD237

BD237G (NPN), BD234G,BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS * High DC Current Gain * Epoxy Meets UL 94 V0 @ 0.125 in * These Devices are Pb-Free and are RoHS Compliant* PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD234G DB237G, BD238G VCEO Collector-Base Voltage BD234G DB237G, BD238G VCBO Emitter-Base Voltage VEBO 5.0 Vdc IC 2.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C PD Collector Current Vdc 45 80 Vdc 60 100 3 BASE 1 EMITTER 1 EMITTER W TO-225 CASE 77-09 STYLE 1 25 TJ, Tstg - 55 to + 150 _C ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Operating and Storage Junction Temperature Range 3 BASE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exc

BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications 3 1 SOT-32 (TO-126) Description The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Table 1. 2 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging BD235 BD235 SOT-32 Tube BD237 BD237 SOT-32 Tube June 2009 Doc ID 4189 Rev 3 1/9 www.st.com 9 Absolute maximum ratings 1 BD235, BD237 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER Collector-emitter voltage (RBE = 1 k) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A ICM Collector peak current (tp < ms) 6 A P

BD237/D SEMICONDUCTOR TECHNICAL DATA IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII

witching Applications * Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD233 : BD235 : BD237 Value 45 60 100 Units V V V VCEO Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 80 V V V VCER Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 6 A PC Collector Dissipation (TC=25C) 25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICBO Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 45 60 80 Units V V V Collector Cut-off Current : BD233 : BD235 : BD237 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V, IE = 0

BD237 (NPN), BD238 (PNP) Preferred Devices Plastic Medium Power Silicon NPN Transistor Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. * DC Current Gain - * * http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc Epoxy Meets UL94, VO @ 1/8 ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III III IIIIIIIIIIII IIII III III 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 2.0 Adc Base C

BD237 SbE D MM 71108264 o042854 725 ME PHIN 7-33-07 PHILIPS INTERNATIONAL SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors ina SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs can be supplied. QUICK REFERENCE DATA BD233 | BD235 | BD237 Collector-base voltage (open emitter) VcBO max. Collector-emitter voltage {open base} VCEO max. Collector-emitter voltage (RgE = 1 kQ) VcER max. Collector current (peak value} lom max. Total power dissipation up to Tmp = 25 OC Prot max. Junction temperature Tj max. D.C. current gain Ic=1A;Vep=2V hee > 25 Transition frequency Ic = 250 mA; Voce = 10 V iT > 3 MHz MECHANICAL DATA Dimensions in mm Fig. 1 TO-126 (SOT-32). 2 7,8 max} Collector connected to metal part of mounting surface ; | een 375 | 3,2 _| uy 3,0 1 = emitter | "4 ] max 2 = collector | 3 = base 1 i 7 2,54 l tf. dL. 12 c 15,3 min | 0,88 . Le < Pinning 1 | 7

3 0 E181 NS | TO1267 L31 60v | 60V 3A 150C 12WC 50M 50/250 1OOMA} AHH [MOB | BD169 | 2N4923 0 MJE182 NS | T0126} L31 gov | 80V 3A 150C 12WC 50M 50/250 LOOMA| AHH |MOB| BD169 | 2N4923 0 MJE200 NS | T0126] &31 25V | 25V 5A 150C 15WC 65M 45/180 2A] AHH [MOB] BD237 2N4923 C MJE201 NS | TOP66| L32 40V | 40V 5A 150C 75WC 25/150 2A) AHG [MO8| BDX73 | 2N6101 G MJE202 NS | TOP66| L32 0v | 60V | 5V 5A 150C 75WC 25/150 2A] AHH [MOB | BDX73 | 2N6i01 0 MJE203 NS | TOP66; L32 60V | 60V 5V 5A 150C TSWC 30/150 1A] AHH [MOB] BDX73 | 2N6101 0 MJE204 NS | TOPG6; L32 80V | 80V 5A 150C 75WC 30/150 1A] AHH |MOB) BDX73 | 2N6101 G MJE205 NS } TOPG6} L32 50vV | 50V |} 4v 5A | 150C 65WC 25/100 2A] AHG [MOB] BD589 | 2N6123 0 MJE205K NS | TOP66) L32 50V | 50V 5A 150C 65WC : 25/100 2A] AHG {MOB} BOX73 | 2N6101 0 MJE210 PS } TO1L26] L31 25V | 25V 5A 150C 15WC 65M 45/180 2A) AHG {MOB ] 8D238 | 2N4920 Q MJE220 NS | T0126) L31 40v | 40V 4A 150 15WC 50M 40/200 { 200MA] AHG {MOB} 80237 | 2N4923 QO MJE221 NS | T0126) L31 40v | 40V

BD237G (NPN), BD234G,BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS * High DC Current Gain * Epoxy Meets UL 94 V0 @ 0.125 in * These Devices are Pb-Free and are RoHS Compliant* PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD234G DB237G, BD238G VCEO Collector-Base Voltage BD234G DB237G, BD238G VCBO Emitter-Base Voltage VEBO 5.0 Vdc IC 2.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C PD Collector Current Vdc 45 80 Vdc 60 100 3 BASE 1 EMITTER 1 EMITTER W TO-225 CASE 77-09 STYLE 1 25 TJ, Tstg - 55 to + 150 _C ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Operating and Storage Junction Temperature Range 3 BASE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exc

BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1K ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25C Total Dissipation @ Ta=25C Derate above 25C Operating and Storage Junction Temperature Range BD233 BD234 45 45 45 SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD BD237 BD238 100 80 100 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.25 10 UNIT V V V V A A W W mW/ C Tj, Tstg - 65 to +150 C Junction to Case Rth (j-c) 5.0 C/W Junction to Ambient in free air Rth (j-a) 100 C/W THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION I VCB=45V, IE=0 BD233/234 Collector Cut off Current CBO BD235/236 VCB=60V, IE=0 VCB=100V, IE=0 BD237/238 Emitter Cut off Current Collector Emitter Sustaining Voltage *VCEO (sus)