BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Pe

BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM http://onse

BAT54SWT1G / BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 1 3 2 1 2 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Ordering Information Part Number Top Mark Package Packing Method BAT54SWT1G YB SC70 3L (SOT-323) Tape and Reel BAT54CWT1G YC SC70 3L (SOT-323) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Sto

BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +125 C TJ Operating Junction Temperature -65 to +125 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Value Unit PD Symbol Power Dissipation Parameter 232 mW RJA Thermal Resistance, Junction to Ambient 430 C/W FR-4 board (3.0 x 4.5 x 0.062" by 1.0 x 0.5" land pads) Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Max. Units 240 320 400 500 0.8 mV mV mV mV V VR Breakdown Voltage IR = 10A VF Forward Voltage IF

BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Pe

Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc LBAT54SWT1G 3 1 We declare that the material of product compliance with RoHS requirements. 2 SOT-323 (SC-70) CATHODE ANODE 1 ORDERING INFORMATION Device Marking Shipping LBAT54SWT1G B8 3000/Tape & Reel LBAT54SWT3G B8 10000/Tape & Reel 2 3 CATHODE/ANODE DEVICE MARKING LBAT54SWT1G= B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol Value VR PF IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW/C mA C C ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 A) Total Capacitance (V R = 1.0 V, f = 1.0

Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc LBAT54SWT1G 3 1 We declare that the material of product compliance with RoHS requirements. 2 SOT-323 (SC-70) CATHODE ANODE 1 ORDERING INFORMATION Device Marking Shipping LBAT54SWT1G B8 3000/Tape & Reel LBAT54SWT3G B8 10000/Tape & Reel 2 3 CATHODE/ANODE DEVICE MARKING LBAT54SWT1G= B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol Value VR PF IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW/C mA C C ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 A) Total Capacitance (V R = 1.0 V, f = 1.0

BAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 ANODE 2 CATHODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Non-Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Rating Junction Temperature TJ -55 to 125 C Storage Temperature R

512-FYP1010DNTU FYP2010DNTU TO-22010020 .64 .529 512-FYP2010DNTU 512-FYPF2010DNTU FYPF2010DNTUTO-220F 100 20 .68 .564 512-MBRP3010NTU MBRP3010NTUTO-220 10030 .78 .663 Dual Series BAR43S SOT-23 300.2.09 .06 512-BAR43S BAT54S SOT-23 300.3.07 .05 512-BAT54S BAT54SWT1G SOT-32330 0.2 .06 .046 512-BAT54SWT1G FAIRCHILD SEMICONDUCTOR GENERAL PURPOSE RECTIFIERS Single Price Each V MOUSER STOCK NO. 512-S1G 512-1N5395 512-S2G 512-1N5404 512-S3G 512-1N5405 512-1N4005 512-S1J 512-1N5397 512-S2J 512-1N5406 512-S3J 512-1N4006 512-GF1K 512-1N5398 512-1N4007 512-GF1M 512-S1M 512-1N5399 512-S2M 512-1N5408 512-S3M All Prices In GBP Fairchild Part Number S1G 1N5395 S2G 1N5404 S3G 1N5405 1N4005 S1J 1N5397 S2J 1N5406 S3J 1N4006 GF1K 1N5398 1N4007 GF1M S1M 1N5399 S2M 1N5408 S3M Package RRM IFAV (V) (A) V FM (V) Price Each V 1 SMA 40011.1V.13 DO-15 4001.51.4V.12 SMB 400 1.51.15V.12 DO-201AD400 3 1.2V.13 SMC 40031.2V.18 DO-201AD500 3 1.2V.38 DO-41 60011.1V.05 SMA 60011.1V.08 DO-15 6001.51.4V.06 SMB 600 1.51

6-SOT-363 26K3669 45J0772 26K3670 0.54 0.07 0.69 0.13 0.69 0.12 50 60 100 750 750 790 25 25 150 DO-41 DO-41 DO-201 10N9426 10N9427 10N9429 0.37 0.16 0.37 0.18 0.72 0.57 BAT SERIES BAT54ALT1G BAT54CLT1G BAT54CTT1G BAT54CWT1G BAT54HT1G BAT54LT1G BAT54SLT1G BAT54SWT1G BAT54T1G BAT54WT1G BAT54XV2T1G MBD301G* MBD330DWT1G MBD54DWT1G MBR150RLG MBR160RLG MBR3100RLG MBRF2060CTG* MBRF SERIES MBR SERIES MBD SERIES 60 852 ... 3-TO-220 45J0786 1.57 0.79 7 30 7 7 45 70 600 450 600 600 700 500 ... ... ... 0.6 0.6 ... 3-SOT-23 3-SOT-23 3-SOT-23 3-SOT-23 3-SOT-93 3-SOT-23 88H4769 88H4772 45J1510 45J1513 26K4532 88H4777 0.38 0.04 0.42 0.29 0.67 0.10 0.67 0.09 0.67 0.10 0.38 0.07 7 30 70 600 450 1V ... ... ... 2-SOD-323 2-SOD-323 2-SOD-323 26K4555 98H0800 26K4556 0.36 0.27 0.36 0.07 0.36 0.08 70 70 500 1V ... 0.2 2-SOD-123 3-SC-70 10N9702 26K4534 0.44 0.24 0.33 0.06 23 23 20 30 30 270 270 440 350 325 5 ... 5 0.5 1 2-SOD-323 6-SOT-563 2-SOD-323 2-SOD-923 2-SOD-923 10N9706 42K2368 10N9707 10N9704 10N9705 0.55 0.30 0

umentation Feedback SLVU429A - December 2010 - Revised January 2011 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated COIL_CURRENT INPUT_CURRENT COIL_VOLTAGE VCC AC_COIL_CURRENT 22 R59 AVCC C1 0.22uF NoPop C54 C60 NoPop 10.0k R92 BAT54SWT1G D4 C38 10uF 3.3V 10.0k 10.0k R98 R88 10.0k + U13-D 14 10.0k R93 5.11k R82 + U13-A 1 10.0k 10.0k R83 49.9 R77 10.0k AVCC 10.0k OPA4348AIPWR 2 3 R96 R99 OPA4348AIPWR 13 12 R97 C62 0.01uF 100k + U10-D - R76 C55 100pF 14 OPA4348AIPWR 13 12 VBIAS VBIAS 5 2 6 4 10.0k R69 10.0k R73 COIL_PWM C58 4700pF 10.0k R79 10.0k R70 13 12 C46 2200pF C40 0.1uF PHASE C66 0.1uF C51 2200pF U12 TS5A3159DCKR 3 1 AVCC C56 4700pF + U10-C - 8 OPA4348AIPWR 9 10 11 V- 4 V+ + 14 U11-D OPA4348AIPWR AVCC R90 10.0k R89 10.0k AVCC R61 10.0k R64 BAT54SWT1G D5 C63 0.22uF C69 0.01uF + U13-C 8 49.9 5.11k R84 6 5 R65 7 10.0k C50 0.01uF + U11-B - + U11-A - 1 100k 330pF VBIAS OPA4348AIPWR 2 3 R78 C57 R87 100k OPA4348AIPWR C39 0.01uF R71 49.9 R72 10.0k AVCC OPA434

, damage may occur and reliability may be affected. B8 M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel NSVBAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 April, 2019 - Rev. 12 1 Publication Order Number: BAT54SWT1/D BAT54SW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Recovery Time (IF = IR = 1

060PT 512-MBR4060PT MBR4060PT 512-FYP1010DNTU FYP1010DNTU 512-FYP2010DNTU FYP2010DNTU 512-FYPF2010DNTU FYPF2010DNTU 512-MBRP3010NTU MBRP3010NTU 512-MBR20150CTTU MBR20150CTTU 512-MBR20200CTTU MBR20200CTTU Dual Series BAR43S 512-BAR43S BAT54S 512-BAT54S 512-BAT54SWT1G BAT54SWT1G BAT54S_D87Z 512-BAT54SD87Z TRIGGER DIODES MOUSER STOCK NO. 512-DB3 512-DB3TG (c) Copyright 2016 Mouser Electronics 654 Fairchild Part No. DB3 DB3TG Package DO-35 DO-35 V(BO) (V) Min. Typ. Max. 28 32 36 30 32 34 mouser.com/fairchild-semiconductor 100 1.06 .591 .604 .713 .72 .677 .677 .69 .783 .811 .935 .828 .912 1.07 1.31 1.41 3.33 2.44 2.38 2.15 2.98 Surface Mount Device For quantities greater than listed, call for quote. MOUSER STOCK NO. Single 512-MBR0520L 512-SB120 512-SS12 512-SS22 512-1N5820 512-MBRS320 512-SB320 512-SS32 512-SB520 512-BAR43 512-BAT54XV2 512-RB520S30 512-RB521S30 512-BAT54 512-BAT54D87Z 512-MBR0530 512-1N5818 512-MBRS130 512-MBRS130L 512-SS13 512-BAT54HT1G 512-SS23 512-1N5821 512-SS33 512-

, damage may occur and reliability may be affected. B8 M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel NSVBAT54SWT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 April, 2019 - Rev. 12 1 Publication Order Number: BAT54SWT1/D BAT54SW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Recovery Time (IF = IR = 1

Marking Device LRB715WT1G 3D VR (V) 40 STYLE VF IF (mA) 30 (A) (B) (C) Max (V) 0.37 (D) IR IF (mA) 1 (E) Max (A) 1.0 VF (V) 10 3 (F) Style A 3 2 1 1 2 Package 10. SC-70/ SOT-323 Surface Mount Schottky Diodes Device Marking Device LBAT54AWT1G LBAT54CWT1G LBAT54SWT1G LBAT54WT1G LRB706F-40T1G LRB715FT1G LRB717FT1G B7 5C B8 B4 3J 3D 3E STYLE VR (V) 30 30 30 30 40 40 40 (A) VF IF (mA) 200 200 200 200 30 30 30 (B) (C) Max (V) 0.4 0.4 0.4 0.4 0.37 0.37 0.37 (D) IR IF (mA) 10 10 10 10 1 1 1 (E) Max (A) 2 2 2 2 1.0 1.0 1.0 VF (V) 25 25 25 25 10 10 10 Style B A C E C A B 3 (F) 3 2 2 1 1 Package 11. SOT-23/ TO-236AB Surface Mount Schottky Diodes Device Marking Device VR (V) IF (mA) VF@IF (V) IR@VR (mA) (uA) (V) Style LBAS40-05LT1G 45 200 40 0.38 1.0 0.2 30 A LBAS70-05LT1G EH 70 70 0.41 1.0 0.1 50 A LRB425DLT1G D3L 100 45 0.55 100 30 10 A LRB491DLT1G D2E 1000 25 0.45 1000 200 20 E STYLE (A) (B) (C) (D) (E) (F) 3 3 2 2 1 1 Package 13 Leshan Radio Company, Ltd. http//:www.lrc.cn 11.1 SOT-23/ TO-236AB Surface