BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Pe

12 R345 10K 11 10 Open Lamps Protection 9 R351 2K GND Current information C319 SYNC_IN D313 100nF C321 R355 R356 C322 R353 100pF 20K 10K 1nF 10K C323 R357 100K 2.2nF C324 R358 R359 C325 47pF 18K 22K 10nF 3 C326 R354 R360 C327 10nF 2K 33K 690pF D314 VSNS1 BAT54SWT1 D315 2 2 1 2 BAV70LT1 R361 220 R362 220 Over Voltage Protection 3 1 1 R363 R364 22K 22K 3 VSNS2 CN306 4324-2S 1 LAMP 2 1 2 RTN BAT54SWT1 Figure 31: LX6503 Schematic and Control Signals 40 A typical application circuit is illustrated in Figure 31. A built in regulator is connected to pin 1 (VIN) to step down the input voltage to the internal operating voltage VDD (pin 16). The VIN of the device can range from 6 to 27 V dc. In this application, the VIN is directly supply from the +12 V dc through fuse resistor F301 to protect the system in the event of a short circuit. C307 and C308 provide low impedance filtering. VDD supplies both output gate drivers and the internal control circuitry. The nominal operating voltage of VDD

BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C Rating 3 3 B8 1 2 (SC-70) SOT-323 CASE 419 STYLE 9 1 2 ORDERING INFORMATION Device Package Shipping BAT54SWT1 SOT-323 3000/Tape & Reel Preferred devices are recom

BAT54SWT1 Barrier Diodes 30 VOLTS DUAL SERIES SCHOTTKY AND BARRIER These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward DIODES voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed 3 * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc 1 2 SOT-323 (SC-70) ORDERING INFORMATION Device Package LBAT54SWT1 SOT-323 CATHODE ANODE 1 2 Shipping 3000/Tape & Reel 3 CATHODE/ANODE Preferred: devices are recommended choices for future use and best overall value. DEVICE MARKING LBAT54SWT1 = B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Symbol Reverse Voltage VR Forward Power Dissipation PF @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Value IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW/

BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM http://onse

BAT54SWT1G / BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 1 3 2 1 2 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Ordering Information Part Number Top Mark Package Packing Method BAT54SWT1G YB SC70 3L (SOT-323) Tape and Reel BAT54CWT1G YC SC70 3L (SOT-323) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Sto

BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Tstg -55 to +150 C Rating Storage Temperature Range 3 3 B8 1 2 (SC-70) SOT-323 CASE 419 STYLE 9 1 2 ORDERING INFORMATION Device Package Shipping BAT54SWT1 SOT-323 3000/Tape & Reel Preferred devices are recom

BAT54SWT1/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ IF = 10 mAdc 1 ANODE 2 CATHODE 3 3 CATHODE/ANODE 1 2 CASE 419 - 02, STYLE 9 SOT- 323 (SC - 70) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Junction Temperature TJ 125 Max C Tstg - 55 to +150 C Rating Storage Temperature Range DEVICE MARKING BAT54SWT1 = B8 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Min Ty

0 1.5 15 0.6 200 25 Single MMDL770T1 70 1.0 20 1.0 200 35 Single RB751V40T1 BAS40LT1 BAS40-04LT1 BAS40-06LT1 BAS70LT1 BAS70-04LT1 BAT54LT1 BAT54ALT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 MMBD452LT1 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 BAT54WT1 BAT54SWT1 MMBD330T1 MMBD770T1 MMBD717LT1 MMBD352WT1 30 2.5 1.0 0.37 500 30 Single 1074 40 40 40 70 70 30 30 30 70 30 7.0 30 7.0 7.0 7.0 7.0 30 30 30 70 20 7.0 5.0 5.0 5.0 2.0 2.0 10 10 10 1.0 1.5 1.0 1.5 1.0 1.0 1.0 1.0 10 10 1.5 1.0 2.5 1.0 1.0 1.0 1.0 0 0 1.0 1.0 1.0 20 15 0 15 0 0 0 0 1.0 1.0 15 20 1.0 0 0.5 0.5 0.5 0.75 0.75 0.4 0.4 0.4 1.0 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.4 0.4 0.6 1.0 0.37 0.6 1000 1000 1000 100 100 2000 2000 2000 200 200 250 200 250 250 250 250 2000 2000 200 200 1000 250 25 25 25 50 50 25 25 25 35 25 3.0 25 3.0 3.0 3.0 3.0 25 25 25 35 10 3.0 Single Dual Series Dual Common Anode Single Dual Series Single Dual Common Anode Dual Series Single Single Single Dual Series Dual Series Dual Series Dual Common Cathode Dual Common Anod

0 1.5 15 0.6 200 25 Single MMDL770T1 70 1.0 20 1.0 200 35 Single RB751V40T1 BAS40LT1 BAS40-04LT1 BAS40-06LT1 BAS70LT1 BAS70-04LT1 BAT54LT1 BAT54ALT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 MMBD452LT1 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 BAT54WT1 BAT54SWT1 MMBD330T1 MMBD770T1 MMBD717LT1 MMBD352WT1 30 2.5 1.0 0.37 500 30 Single 1074 40 40 40 70 70 30 30 30 70 30 7.0 30 7.0 7.0 7.0 7.0 30 30 30 70 20 7.0 5.0 5.0 5.0 2.0 2.0 10 10 10 1.0 1.5 1.0 1.5 1.0 1.0 1.0 1.0 10 10 1.5 1.0 2.5 1.0 1.0 1.0 1.0 0 0 1.0 1.0 1.0 20 15 0 15 0 0 0 0 1.0 1.0 15 20 1.0 0 0.5 0.5 0.5 0.75 0.75 0.4 0.4 0.4 1.0 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.4 0.4 0.6 1.0 0.37 0.6 1000 1000 1000 100 100 2000 2000 2000 200 200 250 200 250 250 250 250 2000 2000 200 200 1000 250 25 25 25 50 50 25 25 25 35 25 3.0 25 3.0 3.0 3.0 3.0 25 25 25 35 10 3.0 Single Dual Series Dual Common Anode Single Dual Series Single Dual Common Anode Dual Series Single Single Single Dual Series Dual Series Dual Series Dual Common Cathode Dual Common Anod

BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * Pb-Free Package is Available 1 ANODE 2 CATHODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage Rating VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ -55 to 125 C Storage Temperature Range Tstg -55 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (

BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * Pb-Free Package is Available 1 ANODE 2 CATHODE 3 CATHODE/ANODE 3 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C 1 2 (SC-70) SOT-323 CASE 419 STYLE 9 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applie

BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +125 C TJ Operating Junction Temperature -65 to +125 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Value Unit PD Symbol Power Dissipation Parameter 232 mW RJA Thermal Resistance, Junction to Ambient 430 C/W FR-4 board (3.0 x 4.5 x 0.062" by 1.0 x 0.5" land pads) Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Max. Units 240 320 400 500 0.8 mV mV mV mV V VR Breakdown Voltage IR = 10A VF Forward Voltage IF

BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Pe

BAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 ANODE 2 CATHODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Non-Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Rating Junction Temperature TJ -55 to 125 C Storage Temperature R