ESCRIPTION 1 base 2 emitter 3 collector * General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 2PB709AQW N5* 1 2PB709ARW N7* Top view 2PB709ASW N9* Note Fig.1 1. * = p: made in Hong Kong. * = t: made in Malaysia. 2 MAM048 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -45 V VCEO collector-emitter voltage open base - -45 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA Ptot total power dissipation - 200 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. For mounting conditions, see "Thermal considerations and footprint design f

amb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Testconditons Unit -10 nA -5 iA -10 nA -500 mV 5 pF IC = 0; VEB = -5 V DC current gain 2PB709AQW 2PB709ARW 2PB709ASW hFE IC = -2 mA; VCE = -10 V 160 210 290 VCE(sat) IC = -100 mA; IB = -10 mA; * Collector capacitance Cc IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency 2PB709AQW 2PB709ARW 2PB709ASW fT IC = -1 mA; VCE = -10 V;f = 100 MHz 300 is; a Max IE = 0; VCB = -45 V; Tj = 150 IEBO * Pulse test: tp Typ IE = 0; VCB = -45 V Emitter cut-off current Collector-emitter saturation voltage Min 60 70 80 260 340 460 MHz 0.02. hFE Classification TYPE 2PB709AQW Marking N5 2PB709ARW 2PB709ASW N7 N9 www.kexin.com.cn 1

ESCRIPTION 1 base 2 emitter 3 collector * General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 2PB709AQW N5* 1 2PB709ARW N7* Top view 2PB709ASW N9* Note Fig.1 1. * = p: made in Hong Kong. * = t: made in Malaysia. 2 MAM048 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -45 V VCEO collector-emitter voltage open base - -45 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA Ptot total power dissipation - 200 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. For mounting conditions, see "Thermal considerations and footprint design f

ESCRIPTION 1 base 2 emitter 3 collector * General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 2PB709AQW N5* 1 2PB709ARW N7* Top view 2PB709ASW N9* Note Fig.1 1. * = p: made in Hong Kong. * = t: made in Malaysia. 2 MAM048 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -45 V VCEO collector-emitter voltage open base - -45 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA Ptot total power dissipation - 200 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. For mounting conditions, see "Thermal considerations and footprint design f

ESCRIPTION 1 base 2 emitter 3 collector * General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 2PB709AQW N5* 1 2PB709ARW N7* Top view 2PB709ASW N9* Note Fig.1 1. * = p: made in Hong Kong. * = t: made in Malaysia. 2 MAM048 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -45 V VCEO collector-emitter voltage open base - -45 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA Ptot total power dissipation - 200 mW Tstg storage temperature Tamb 25 C; note 1 -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Note 1. For mounting conditions, see "Thermal considerations and footprint design f

100 600 80 BCX18 45 500 100 - 250 250 - 600 80 BC807 / -16 / -25 / -40 100 600 80 BCX17 PNP 170 - 340 100 - 140 60 500 100 - 50 80 500 100 - 50 Polarity NPN 2PA1774QM / RM / SM 125 - 420 85 - 170 Package Size (mm) Ptot (mW) BC817W / -16W / -25W / -40W PNP 2PB709ARW / SW BC856W / AW / BW BC857T / AT / BT / CT PEMT1 BC857BV BC856S BC807DS PIMZ2 PUMZ2 PEMZ7 BC817DPN BC857AM / BM / CM 1) hFE max SOT223 (SC-73) SOT89 (SC-62) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 1700 1300 VCEO (V) IC (mA) hFE min 20 1000 85 - 160 375 40 BCP68 / -25 BC868 / -25 45 1000 63 - 100 160 - 250 100 BCP54 / -10 / -16 BCX54 / -10 / -16 60 1000 63 - 100 160 - 250 100 BCP55 / -10 / -16 BCX55 / -10 / -16 100 300 100 BSP41 BSR41 63 - 100 160 - 250 100 BCP56 / -10 / -16 BCX56 / -10 / -16 fT min (MHz) 80 1000 40 - 100 120 - 300 100 BSP43 BSR42 / 43 20 1000 85 - 160 250 - 375 40 BCP69 / -16 / -25 BC869 / -16 / -25 45 1000 63 - 100 160 - 250 BCP51 / -10 / -16 BCX51 / -10 / -16 63 - 100 160 - 250 100 BCP52 / -10 / -16 BCX52 / -10 / -16 40 -

0.5 1700 1300 250 200 300 300 250 single single single single double double single PMBT3904YS PMBT3904VS PMBT3904M PMBT3906YS PMBT3906VS PMBT3906M PMBT3946YPN PMBT3946VPN Polarity NPN BC807W / -16W / -25W / -40W 2PB1219AQ / R/S 1.6 x 1.2 x 0.55 Ptot (mW) 2PB709ARW / SW BC857W / AW / BW / CW 2.9 x 1.3 x 1.0 Configuration VCEO (V) IC (mA) hFE min hFE max 12 100 40 120 40 100 100 300 15 200 40 120 PNP fTmin (MHz) toff (ns) 400 20 BSV52 180 1200 PMBS3904 PMSS3904 300 250 500 20 PMBT2369 PMST2369 40 200 100 300 300 250 30 600 100 300 250 250 250 250 40 600 100 300 40 800 100 40 100 100 40 40 200 600 100 100 300 250 300 300 250 300 150 700 300 300 250 200 PXT2222A MMBT3904 PZT4401 PXT4401 PMST3904 PMBT2222 PMST2222 PMBT4401 PMST4401 MMBT2222A PZT2222A PMBT2222A PMSTA56 60 600 100 300 200 PMBS3906 40 200 100 300 300/250 250/300 PMSS3906 MMBT3906 PZT4403 PXT4403 365 365 PMST2222A BSR14 300 350 PMBT3904 PMBT3906 PMST3906 PMBT4403 PMST4403 PMBT2907 PMST2907A 300 NPN / PNP 48 1.6 x 1.2 x 0.55 300 VCEO (V)

FET driver with level shifter function 2PC4617QM / RM 60 500 BC848W PMST5088 100 32 PMD3001D PMST5089 BC848B 50 45 Contains fTmin (MHz) 450 Package Size (mm) Ptot (mW) hFE max 110 - 200 MOSFET driver SOT457 (SC-74) hFE min Small-signal transistors MOSFETs 2PB709ARW / SW BC857W / AW / BW / CW BC857T / AT / BT / CT BC856W / AW / BW BC856T / AT / BT 2PA1576Q / R/S 2PA1774Q / R/S BC857AM / BM / CM BC807W / -16W / -25W / -40W 2PB1219AQ / R/S PMSTA55 PMBTA56 PMSTA56 27 General purpose bipolar transistors Double transistors High voltage transistors SOT457 (SC-74) SOT363 (SC-88) SOT666 Package SOT223 (SC-73) SOT89 (SC-62) SOT457 (SC-74) SOT23 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.9 x 1.5 x 1.0 1700 1300 600 SOT323 (SC-70) Package Size (mm) Ptot (mW) Polarity NPN PNP NPN/PNP 2.9 x 1.5 x 1.0 2.0 x 1.25 x 0.95 1.6 x 1.2 x 0.55 600 300 300 Size (mm) Ptot (mW) VCEO (V) IC (mA) hFE min hFE max fT min (MHz) 40 100 120 450 100 PUMX1 PEMX1 45 100 200 450 100 BC847BS BC847BV 65 100 110 450 100 BC846S 50 150 120 560 1

140 BCX17 2PB710ARL 2PB710ASL 45 500 100 50 500 85 - 170 60 500 100 - 50 80 500 100 - 50 NPN 2PA1774QM / RM / SM 2PB709ART 2PB709ARL 2PB709ASL 65 100 52 1.0 x 0.6 x 0.5 150 IC (mA) 100 hFE max 1.6 x 0.8 x 0.77 200 VCEO (V) 45 hFE min 2.0 x 1.25 x 0.95 250 2PB709ARW / SW BC857W / AW / BW / CW BC857T / AT / BT / CT BC856W / AW / BW BC856T / AT / BT 2PA1576Q / R / S 2PA1774Q / R / S BC807W / -16W / -25W / -40W 1.0 x 0.6 x 0.5 Ptot (mW) BOTTOM VIEW 2.9 x 1.3 x 1.0 BOTTOM VIEW 1.6 x 1.2 x 0.55 Configuration Polarity M3D088 M3D088 2.9 x 1.3 x 1.0 BC857AM / BM / CM VCEO (V) IC (mA) hFE min hFE max 12 100 40 120 40 100 100 300 15 200 40 120 toff (ns) 400 20 BSV52 180 1200 PMBS3904 PMSS3904 300 250 500 20 PMBT2369 PMST2369 40 200 100 300 300 250 30 600 100 300 250 250 250 250 40 600 100 300 40 800 100 40 100 100 40 PNP fT min (MHz) 40 200 600 100 100 300 250 300 300 250 300 150 700 300 300 250 200 PXT2222A MMBT3904 PZT4401 PXT4401 PMST3904 PMBT2222 PMST2222 PMBT4401 PMST4401 MMBT2222A PZT2222A PMBT2222A P

140 BCX17 2PB710ARL 2PB710ASL 45 500 100 50 500 85 - 170 60 500 100 - 50 80 500 100 - 50 NPN 2PA1774QM / RM / SM 2PB709ART 2PB709ARL 2PB709ASL 65 100 52 1.0 x 0.6 x 0.5 150 IC (mA) 100 hFE max 1.6 x 0.8 x 0.77 200 VCEO (V) 45 hFE min 2.0 x 1.25 x 0.95 250 2PB709ARW / SW BC857W / AW / BW / CW BC857T / AT / BT / CT BC856W / AW / BW BC856T / AT / BT 2PA1576Q / R / S 2PA1774Q / R / S BC807W / -16W / -25W / -40W 1.0 x 0.6 x 0.5 Ptot (mW) BOTTOM VIEW 2.9 x 1.3 x 1.0 BOTTOM VIEW 1.6 x 1.2 x 0.55 Configuration Polarity M3D088 M3D088 2.9 x 1.3 x 1.0 BC857AM / BM / CM VCEO (V) IC (mA) hFE min hFE max 12 100 40 120 40 100 100 300 15 200 40 120 toff (ns) 400 20 BSV52 180 1200 PMBS3904 PMSS3904 300 250 500 20 PMBT2369 PMST2369 40 200 100 300 300 250 30 600 100 300 250 250 250 250 40 600 100 300 40 800 100 40 100 100 40 PNP fT min (MHz) 40 200 600 100 100 300 250 300 300 250 300 150 700 300 300 250 200 PXT2222A MMBT3904 PZT4401 PXT4401 PMST3904 PMBT2222 PMST2222 PMBT4401 PMST4401 MMBT2222A PZT2222A PMBT2222A P