ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Ratings * Symbol TA = 25C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V 310 195 1.2 mA mA A ID Maximum Drain Current TJ Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C TSTG - Continuous TJ = 100C - Pulsed * These ratings are limiting values above which the serviceability of any sem

A B C D 1 1 PH1 under CPU botten side : CPU thermal protection at 92 degree C Recovery at 56 degree C PJ201 1 @ JUMP_43X118 VMB PL201 SMB3025500YA_2P 1 2 PF201 1 VL PR203 47K_0402_1% TM-2 1 EC_SMB_CK1 (36) 6 O - 2 1 1 7 TM-3 D S PU102B LM393DG_SO8 1 PQ201 2N7002KW _SOT323-3 2 G VL PR208 100K_0402_1% PR210 100K_0402_1% 2 2 PC204 1000P_0402_50V7K 2 1 A/D BATT_TEMPA (36) PR207 15.4K_0402_1% +3VALW P PC203 0.22U_0603_25V7K 2 1 1 2 PR211 10K_0402_1% + 4 EC_SMB_DA1 (36) 1 2 PR209 6.49K_0402_1% 1 8 5 TM_REF1 1 2 PR205 13.7K_0402_1% 1 2 TM-1 MAINPW ON (46) 2 3 PH201 100K_0603_1%_TH11-4H104FT PR206 100_0402_5% P PC202 0.01U_0402_25V7K 1 PC201 1000P_0402_50V7K PR202 47K_0402_1% G 2 2 1 1 2 2 PR204 100_0402_5% @ TYCO_1775789-1 VL BATT+ 12A_65V_451012MRL 1 EC_SMCA EC_SMDA TS 2 1 1 2 3 4 5 6 7 8 9 2 2 1 2 3 4 5 6 7 GND GND 2 2 2 VMB2 JBATT 1 BATT_SEL_HW (45) 3 3 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/6/22 Deciphered Date 2008/6/22 THIS SHEET OF ENGINEERING DRA

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * * www.onsemi.com Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package These Devices are Pb-Free and are RoHS Compliant ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 D S G SC-70 3 LEAD CASE 419AB MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous TJ = 100C Pulsed Operating Junction Temperature Range Storage Temperature Range Symbol Value Unit VDSS 60 V VGSS 20 V ID 310 195 1.2 mA mA A TJ -55 to +150 C TSTG -55 to +150 C 7KW 7KW = Specific Device Marking D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G THERMAL CHARACTERISTICS

at 56 degree C PJ201 1 @ JUMP_43X118 VMB PL201 SMB3025500YA_2P 1 2 PF201 1 VL PR203 47K_0402_1% TM-2 1 BATT_TEMPA BATT_SEL_HW 3 O - 1 + 2 1 1 1 8 6 4 2 1 A/D (37) 2 (31,37) PR207 15.4K_0402_1% EC_SMB_DA1 +3VALW P (47) 7 TM-3 D S PU102B LM393DG_SO8 1 PQ201 2N7002KW _SOT323-3 2 G VL PR208 100K_0402_1% PR210 100K_0402_1% 2 1 2 PR211 10K_0402_1% (31,37) PC203 0.22U_0603_25V7K 2 1 1 2 PR209 6.49K_0402_1% EC_SMB_CK1 5 TM_REF1 P 2 PR205 13.7K_0402_1% 1 2 TM-1 MAINPW ON 2 3 PH201 100K_0603_1%_TH11-4H104FT PR206 100_0402_5% G PC202 0.01U_0402_25V7K 1 PC201 1000P_0402_50V7K PR202 47K_0402_1% PC204 1000P_0402_50V7K 2 2 1 1 2 2 PR204 100_0402_5% @ TYCO_1775789-1 VL BATT+ @ 12A_65V_451012MRL 1 EC_SMCA EC_SMDA TS 2 1 1 2 3 4 5 6 7 8 9 2 2 1 2 3 4 5 6 7 GND GND 2 2 2 VMB2 JBATT 1 (37,46) 3 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/6/22 Deciphered Date 2008/6/22 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CO

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Ratings * Symbol TA = 25C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V 310 195 1.2 mA mA A ID Maximum Drain Current TJ Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C TSTG - Continuous TJ = 100C - Pulsed * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RJA Value Units Total Device Dissipation Derating above TA = 25C Parameter 300 2.4 mW mW/C Thermal Resistance, Junction to Ambient * 410 C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 in

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Ratings * Symbol TA = 25C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V 310 195 1.2 mA mA A ID Maximum Drain Current TJ Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C TSTG - Continuous TJ = 100C - Pulsed * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RJA Value Units Total Device Dissipation Derating above TA = 25C Parameter 300 2.4 mW mW/C Thermal Resistance, Junction to Ambient * 410 C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 in

2N7002KW List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing..........

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unitinch(mm) * RDS(ON), VGS@10V,IDS@500mA=3 * Advanced Trench Process Technology 0.087(2.20) 0.070(1.80) * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition 0.087(2.20) 0.078(2.00) 0.004(0.10)MIN. * RDS(ON), VGS@4.5V,IDS@200mA=4 * Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.054(1.35) 0.045(1.15) * ESD Protected 2KV HBM * /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) *UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH MECHANICALDATA * Case: SOT-323 Package 0.044(1.10) 0.035(0.90) 0.004(0.10)MAX. * Terminals : Solderable per MIL-STD-750,Method 2026 $SSUR[:HLJKWRXQFHVJUDPV 0.016(0.40) 0.008(0.20) * Marking : K72 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t Uni ts D r a i n- S o ur c e Vo lta

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES * RDS(ON), VGS@10V,IDS@500mA=3 * RDS(ON), VGS@4.5V,IDS@200mA=4 * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition * Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. * ESD Protected 2KV HBM * In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA * Case: SOT-323 Package D 3 * Terminals : Solderable per MIL-STD-750,Method 2026 Top View * Marking : K72 1 2 G S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 60 V Ga te - S o ur c e Vo lta g e V GS +20 V ID 11 5 mA ID M 800 mA PD 200 120 mW T J ,T S TG - 5 5 to + 1 5 0 R J A 625 C o nti nuo us D r a i n C ur r e nt P uls e d D r a i n C ur r e nt 1) O M a xi m um P o we r D i s s i p a ti o n Op e r a t

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES * RDS(ON), VGS@10V,IDS@500mA=3 * RDS(ON), VGS@4.5V,IDS@200mA=4 * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition * Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. * ESD Protected 2KV HBM * Component are in compliance with EU RoHS 2002/95/EC directives MECHANICALDATA * Case: SOT-323 Package * Terminals : Solderable per MIL-STD-750,Method 2026 D * Marking : K72 3 Top View 1 2 G S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e VD S 60 V G a t e - S o ur c e Vo l t a g e VGS +20 V ID 11 5 mA ID M 800 mA PD 200 120 mW TJ , TS T G -5 5 to + 1 5 0 RJ A 625 C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p

u/25V/Y 5V C7 2.2u/16V/Y 5V C8 Connect to Power Ground 2.2u/16V/Y 5V C9 2.2u/16V/Y 5V C10 C12 1u/10V/X7R VCOM Connect to Power Switch 2.2u/16V/Y 5V R1 VCOM_DRIVER 2K/5% VCC VDD VGH 3 Connect to a MOS Switch to prevent leakage current C13 2.2u/25V/Y 5V VGH 2N7002KW VDH 3 2 Q1 VDH 2.2u/25V/Y 5V VDL 1 2 DISCHARGE ZIF-40-0.5 C15 2.2u/25V/Y 5V 2N7002KW Connect to Timing Controller GPIO VGL 2.2u/25V/Y 5V C14 1 /CS BUSY ID SCLK SI SO /RESET PWRON VCL C42P C42M C41P C41M C31M C31P C21M C21P C16M C16P C15M C15P C14M C14P C13M C13P C12M C12P C11M C11P VCOM_DRIVER VCC VDD VSS VGH VGL VDH VDL BORDER VST VCOM_PANEL 40PIN 0.5mm PITCH CONNECTOR/PAD EPD PANEL PCB SIDE Connect Connect Connect Connect 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Q2 C16 2N7002KW 3 2 DISCHARGE: set high for EPD discharge when EPD power off BORDER BORDER 1 VST Q3 1 100K/5% 100K/5% VGL R2 R3 VCOM D1 SS2040FL 100K/5% BSS84W 3 2 R5 Q4 1 2 Connect

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES * RDS(ON), VGS@10V,IDS@500mA=3 * RDS(ON), VGS@4.5V,IDS@200mA=4 * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition * Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. * ESD Protected 2KV HBM * In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA * Case: SOT-323 Package * Terminals : Solderable per MIL-STD-750,Method 2026 * Marking : K72 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 60 V Ga te - S o ur c e Vo lta g e V GS +20 V ID 11 5 mA ID M 800 mA PD 200 120 mW T J ,T S TG - 5 5 to + 1 5 0 R J A 625 C o nti nuo us D r a i n C ur r e nt P uls e d D r a i n C ur r e nt 1) O M a xi m um P o we r D i s s i p a ti o n Op e r a ti ng J unc ti o n a n

Y 5V R1 0R/NC (Reserv ed f or test) C3 2.2u/16V/Y 5V C4 2.2u/25V/Y 5V 2.2u/25V/Y5V C7 2.2u/25V/Y5V C8 2.2u/16V/Y 5V C9 Connect to Power Ground 2.2u/16V/Y 5V 2.2u/16V/Y 5V S C10 IN C6 C . C5 2.2u/25V/Y5V C11 AY C12 1u/10V/X7R Connect to Power Switch PL VGH 2N7002KW Q1 VDH 2N7002KW DISCHARGE 1 2 Connect to Timing Controller GPIO PWM PWM: 100~300KHz, 50% duty cycle, square wave SI 100n/16V/X7R 3 Connect to Timing Controller GPIO VE DISCHARGE: set high for EPD discharge when EPD power off Q2 VA C17 R2 VCOM_DRIVER 2K/5% VCC VDD VGH ZIF-40-0.5 2.2u/25V/Y5V VGL D IS C13 3 2 1 2.2u/16V/Y 5V C14 2.2u/25V/Y5V C15 2.2u/25V/Y5V C16 2.2u/25V/Y5V VDH VDL BORDER VST Q3 2N7002KW BORDER 2 3 1 3 Connect to a MOS Switch to prevent leakage current VCOM /CS BUSY ID SCLK SI SO /RESET ADC_IN VCL C42P C42M C41P C41M C31M C31P C21M C21P C16M C16P C15M C15P C14M C14P C13M C13P C12M C12P C11M C11P VCOM_DRIVER VCC VDD VSS VGH VGL VDH VDL BORDER VST VCOM_PANEL 100K/5% R3 100K/5% VCOM R4 R5 100K/5% 1

2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays DriversRelays, Displays, Lamps, Solenoids, Memories, etc. ESD Protected 2KV HBM In compliance with EU RoHS 2002/95/EC directives A L 3 3 C B Top View 1 1 K 2 E 2 D F G H J MECHANICAL DATA Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 REF. A B C D E F MARKING Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 K72 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Drain PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7' inch Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 2

2N7002KW Features * * * * * * * * High density cell design for Low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" N-Channel Enhancement Mode Field Effect Transistor SOT-323 A Mechanical Data * * * * D Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: 72K D B G F C S E Maximum Ratings * * * Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance; 625K/W Junction To Ambient H G J K DIMENSIONS Parameter Drain-Source-Voltage Symbol Value Unit VDSS 60 V ID 340 mA 200 mW Drain Current Total Power Dissipation PD DIM A B C D E F G H J K INCHES MIN MAX .071 .087 .045 .053 .083 .096 .026 Nominal .047 .055 .012 .016 .000 .004 .035 .039 .004 .010 .006 .016 MM MIN MAX 1.80 2.20 1.15 1.35 2