ry to comply with this revision shall be completed by 23 October 2001. INCH-POUND MIL-PRF-19500/512E 23 July 2001 SUPERSEDING MIL-PRF-19500/512D 14 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND JANKC2N4033 AND JANHC2N4033 This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and figure 5 (JANKC and JANHC) herein. 1.3 Maximum ratings. PT (1) PT (
19 Pages, 101 KB, Originally with this document shall be completed by 23 July 2010. INCH-POUND MIL-PRF-19500/512J 23-APRIL-2010 SUPERSEDING MIL-PRF-19500/512H 15 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANKC2N4033, AND JANHC2N4033 This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
33 Pages, 458 KB, OriginalAL 512 30 X 30 512 JANTXV2N4029 2N4029 JANTXV2N4029 2N4029 251 20 X 251 20 2N2219AL JANTXV2219AL 2N2219AL 512 30 30 512 JANTXV2219AL JANS2N4029 JANS2N4029 512 30 X 512 30 JANSR2N4029 JANSR2N4029 251 20 251 20 JANS2N2219AL JANS2N2219AL 512 30 X X 512 30 JAN2N4033 JAN2N4033 251 20 251 20 JANSR2N2219AL JANSR2N2219AL 512 30 X 30 512 JANTX2N4033 JANTX2N4033 255 20 X 255 20 JAN2N2222A JAN2N2222A 512 30 X 30 512 JANTXV2N4033 2N4033 JANTXV2N4033 2N4033 255 20 X 255 20 JANTX2N2222A JANTX2N2222A 512 30 X 512 30 JANS2N4033 JANS2N4033 255 20 X 255 20 2N2222A JANTXV2N2222A 2N2222A JANTXV2N2222A 512 30 X 512 30 JANSR2N4033 JANSR2N4033 255 20 X 255 20 JANS2N2222AJANS2N2222A 394 155 X 155 394 JAN2N4150 JAN2N4150 255 20 X 255 20 JANSR2N2222A JANSR2N2222A Bipolar Transistors 18 X 18- - TO-78 NPN TO-78 - NPN 60 - 60 60 5 60 0.05 5 0.6 0.05 500 0.6 -65 to +200 500 450 -65 to
17 Pages, 6924 KB, Original2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030, 2N4031 , 2N4032, and 2N4033 are sili- con planar epitaxial PNP transistors in Jedec TO- 39 metalcase primarily intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM c B PNP E S- 6856 ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter 2N4030 2N4031 Unit 2N4032 2N4033 VcBo Collector-base Voltage (l_ = 0) 60 80 Vv VcEO Collector-emitter Voltage (lp = 0) 60 80 Vv VeEBo Emitter-base Voltage (Ic = 0) -5 Vv lo Collector Current -1 A Prot Total Power Dissipation at Tamp < 25 C 0.8 Ww at Tcase < 25 C 4 W Tstg, Tj | Storage and Junction Temperature 65 to 200 C October 1988 1/62N4030-2N4031-2N4032-2N4033 THERMAL DATA Rth j-case | Thermal Resistance Junction-case Max 44 C/W Rthj-amb | Thermal Resistance Junction-ambient Max 218 C/W ELECTRICAL CHARACTERISTICS (T.,,5 = 25 unless otherwise specified) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit IcBo Co
6 Pages, 146 KB, ScanN2222AC3A 2N2222AC3B 2N2222AC3C 2N2222ACSM4R 2N2222ACSM4R-JQR-B 2N2896CSM4 2N2898CSM4 2N2907AC3A 2N2907AC3B 2N2907AC3C 2N2907ACSM4 2N2907ACSM4R 2N3019CSM4 2N3114CSM-JQR 2N3114CSM4 2N3209CSM4 2N3439CSM4 2N3439CSM4R 2N3440C3 2N3501CSM4 2N3637CSM4 2N3735CSM4 2N4033CSM4 2N5415CSM4 2N5415LCC3 2N5416CSM4 BCX17CSM4 BCX19CSM4 BF257CSM4 BF258CSM4 BF259CSM4 SML2308CSM4 SML2955CSM4 ZTX656CSM4 ZTX657CSM4 ZTX756CSM4 ZTX757CSM4 PRODUCT Status 2N2221 2N2221A 2N2221ACECC-O 2N2221AX 2N2221CECC-O 2N2222 2N2222A 2N2222ACECC-O 2N2222CECC-O 2N2368 2N2369 2N2369A 2N2411 2N2411X 2N2412 2N2412BX 2N2412X 2N2483 2N2484 NPN LCC3 (MO-041BA) 50V 0.8A 100 NPN LCC3 (MO-041BA) 50V 0.8A 100 NPN LCC3 (MO-041BA) 50V 0.8A 100 NPN LCC3R 40V 0.8A 100 NPN LCC3R 40V 0.8A 100 NPN LCC3 (MO-041BA) 90V 1A 60 NPN LCC3 (MO-041BA) 65V 0.5A 50 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 LCC3 (MO-041BA) 80V 1A 80 NPN LCC3 (MO
1197 Pages, 40410 KB, Original015 SUPERSEDING MIL-PRF-19500/512K w/AMENDMENT 1 29 January 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, SWITCHING, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT) AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, DEVICE TYPES 2N4029 AND 2N4033, QUALITY LEVELS: JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP silicon transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation level
37 Pages, 892 KB, Original2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCBO Collector-Base Voltage IE = 0 -VCEO Collector-Emitter Voltage IB = 0 -VEBO Emitter-Base Voltage IC = 0 -IC Collector Current 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 @ Tcase= < 25 @ Tamb= < 25 Ptot TJ TStg Value Junction Temperature Storage Temperature range Unit 60 80 60 80 60 80 60 80 V V 5 V 1 A 4 0.8 200 -65 to +200 Watts C C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient COMSET SEMICONDUCTORS Value Unit 44 218 K/ W K/ W 1/3 PNP 2N4030 - 2N4031 - 2N4032 - 2N4033 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Sy
3 Pages, 254 KB, Original2N4033 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES CASE T0-39 TYE 2N4030 THROUGH 2N4033 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICA- TIONS UP TO 1 AMPERE. THE 2N4030, 2N4031, 2N4032, 2N4033 ARE COMPLEMENTARY TO THE NPN 2N3108, 2N3020, 2N3107, 2N3019' RESPECTIVELY. 2N4030 2N4031 ABSOLUTE MAXIMUM RATINGS 2N4032 2N4033 Collector-Base Voltage -VCBO 60V 80V Collector-Emitter Voltage / =VCRO 60V 80V Emitter-Base Voltage -VEBO 5V 5V Collector Current -Ic 1A Total Power Dissipation (Tc< 25C) - Ptot 4w (Ta< 25C) 800mW Operating Junction & Storage Temperature Tj Tstg -65 to 200C ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) wn. . PARAMETER SYMBOL MIN MAX! UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage -~BVCBO -Ic=0.0lmA Ip=0 2N4030, 2N4032 60 Vv 2N4031, 2N4033 80 Vv Collector-Enitter Breakdown Voltage -LVCEO * -Ic=10mA Ip=0 2N4030, 2N4032 60 v 2N4031,
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2 Pages, 144 KB, Scan2N4033 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol 2N4032 2N4033 Unit Collector - Emitter Voltage VCEO - 60 - 80 Vdc Collector - Base Voltage VCBO - 60 - 80 Vdc Emitter - Base Voltage VEBO - 5.0 - 5.0 Vdc Collector Current -- Continuous IC - 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 0.8 4.56 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 4.0 22.8 Watts mW/C TJ, Tstg - 65 to + 200 C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 140 C/W Thermal Resistance, Junction to Case RqJC 25 C/W Operating and Storage Junction Temperature Range 2 1 CASE 79-04, STYLE 1 TO-39 (TO-205AD) LAST ORDER 23/09/99 LIFETIME BUY MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - 60 - 80 -- -- - 60 - 80 -- -- - 5.0 -- -- -- -- -- - 50 - 50 - 50 - 50 -- - 10 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = - 10 mAdc) Collect
8 Pages, 161 KB, Original2N4033 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification PNP medium power transistors 2N4031; 2N4033 FEATURES PINNING * High current (max. 1 A) PIN * Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case * Audio frequency applications for industrial service. DESCRIPTION 1 handbook, halfpage 3 2 PNP medium power transistor in a TO-39 metal package. 2 3 Fig.1 1 MAM334 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -80 V VCEO collector-emitter voltage open base - -80 V ICM peak collector current - -1.5 A Ptot total power dissipation Tamb 25 C - 0.8 W hFE DC current gain IC = -500 mA; VCE = -5 V 25 - 70 - 2N4031 100 400 MHz 2N4033 150 500 MHz 2N4031 2N4033 fT transition frequency 1997 May 22
8 Pages, 50 KB, Original2N4033 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -80 V V CEO Collector-Emitter Voltage (IB = 0) -80 V V EBO Emitter-Base Voltage (IC = 0) -5 V Collector Current -1 A 0.8 4 W W IC P t ot T stg Tj o Total Dissipation at Tamb 45 C o at T C 45 C St orage Temperature Max. Operating Junction Temperature September 2002 -55 to 175 o C 175 o C 1/6 2N4033 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junct ion-Case Thermal Resistance Junct ion-Ambient Max Max o 37.5 187.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Test Cond ition s Min. Typ . Max. Un it -50 -50 nA A Collector Cut-off Current (I E = 0) V CE = -60 V V CE = -60 V Collector-Bas
6 Pages, 47 KB, Originaluctors PNP medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio frequency applications for industrial service. DESCRIPTION PNP medium power transistor in a TO-39 metal package. Product specification 2N4031; 2N4033 PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case 2 / MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vso collector-base voltage open emitter - -80 Vv Vceo collector-emitter voltage open base - 80 Vv lom peak collector current - -1.5 A Prot total power dissipation Tamb = 25 C - 0.8 Ww hee DC current gain le = -500 mA; Vce = -5 V 2N4031 25 - 2N4033 70 - fr transition frequency Io = -50 MA; Voce = -10 V; f = 100 MHz 2N4031 100 400 MHz 2N4033 150 500 MHz 1997 May 22 158Philips Semiconductors PNP medium power transistors Product specification 2N4031; 2N4033 LIMITING VALUES in accordance with the Absolute Maximum Rat
3 Pages, 64 KB, Scan2N4033 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES a ut, F tia Tk a Vt "Bae ieee ue wer ee Dy. Me E re i ' re yy nel t eaeg te | yi. vei i ES ag 1g 4 WW l . ra ride a wen we ate fl Wieless uty s 2 ate dis Bet aerate, ey eee ie eat ae Ei) PRR ri SO aes cf ee Vos irl ue 2 ete dor tte. W uP ya 4 ' aio ! " ad wed ue ee ere sae Ue Ar ans Ay La r 1 ait mt ' s L ~ at i e ra i rae | Pal aM ies rH Bs, 4 st. e Te d hi 1 4 ue a roy ' . , : , Wey 4 I Teen hs hile et oak pet aa gt roe ee el eel st qeen haya WEED Tha , 2m ' : THE 2N4030 THROUGH 2N4033 ARE PNP SILICON PLANAR BPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICA- TIONS UP TO 1 AMPERE. THE 2N4030, 2N4031, 2N4032, 2N4033 ARE COMPLEMENTARY TO THE NPN 2N3108, 2N5020, 2N5107, 2N3019: RESPECTIVELY. CEB 2N4030 2N4041 ABSOLUTE MAXIMUM RATINGS 2N4032 2N4045 Collector-Base Voltage -VCRO 60V 80V Collector-Emitter Voltage - -VCRO 60V 80V Emitter-Base Voltage -VEBO 5V 5V Collector Curr
2 Pages, 244 KB, Scan2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -80 V V CEO Collector-Emitter Voltage (I B = 0) -80 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -1 A 0.8 4 W W IC o P t ot Total Dissipation at T amb 45 C at T case 45 o C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1997 -55 to 200 o C 200 o C 1/6 2N4033 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 44 218 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -60 V V CE = -60 V Min. T amb = 150 o C Typ . Max. Un it -50
6 Pages, 57 KB, Original2N4033 P-N-P SILICON TRANSISTORS BULLETIN NO. DLS 7311982, MARCH 1973 MEDIUM POWER P-N-P TRANSISTORS FOR COMPUTER MEMORY APPLICATIONS e@ Increased Dissipation at 25C Case Temperature... 10 W Max (2N4030 thru 2N4033) e High ViBR)CEO ... 80 V Min (2N4027, 2N4029, 2N4031, 2N4033) mechanical data 2N4026 THRU 2N4029 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE aps 219 pia 3 ADS a6 4 te.100 yoo aoso~] |. 2 ~ COLLECTOR fi a050 > at Th. ALL DIMENSIONS @RE rh \ IN INCHES yp ts + rv UNLESS OTHERWISE 1 oe ee ERS SPECIFIED t i Se 90. 1 0 400 oe if bate | vl fe 1 EMITTER ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE* 2N4030 THRU 2N4033 THE COLLECTOR IS iN ELECTRICAL CONTACT WITH THE CASE reas temrenatone | TT8D MEASUREMENT SOIT ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE i SPECIFIED | | ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at 25C free-air temperature (unless otherwise noted} 2N4026 2N4027 | 2N4030 2N4031 UNIT 2N4028
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