ry to comply with this document shall be completed by 7 September 2010. MIL-PRF-19500/323L 7 June 2010 SUPERSEDING MIL-PRF-19500/323K 18 January 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 (similar to TO-18), 2 (UB), and 3 (die) herein. 1.3 Maximum ratings, unless otherwise specified, TC = + 25C. Type 2N3250A 2N3251A

| 0.36W ]A | 200 50 40 |0 50 | 150 10M 0.25 10M 50 JE 250M | T 2N3250A |S | P 8-208 | HSS | 0.36W [A | 200 60 60 |}O | 50 } 150 10M | 0.25 10M 50 |}E | 250M |T 2N3251 |s|P 8-208 | HSS | 0.36W | A | 200 50 40 70 | 100 | 300 10M | 0.25 10M | 100 /E | 300M;T 2N3251A {S| P 8+208 | HSS | 0.36W | A 1200 60 60 | O | 100 | 300 LOM 0,25 10M 100 |E 300M | T 2N3252 |SIN 8-214] Hss | 1.0W | A | 200 60 30/0 | 30] 90} 0.5A 0.3 | 0.15A 200M | T ou 383 s|N 8-214 | HSS | 1.0W jA | 200 75 40 |O } 25 | 75 | 375M | 0.35 | 0.15A 175M | T 2 thru Thyristors, see Table on Page 1-154 2N3259 2N3260 [SIN pMs | 200W |c 200 | 200 | 200 /0j; 10] 40 20A 1 20A 0.6M | T 2N3261 S|N HSS 0.3W {A [175 40 15 |0 40 | 150 10M 0.35 0.14 600M 1-137GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N69

2N3251A | Unit C ; CASE 22-03, STYLE 1 ollector-Emitter Voltage VcEO -40 ~ 60 Vdc TO-18 (TO-206AA) Coliector-Base Voltage VcBo -50 ~60 Vde Emitter-Base Voltage VEBO -5.0 Vdc 3 Collector Collector Current lc 200 mAdc Total Device Dissipation @ Ta = 25C Pp 0.36 Watt 2 Derate above 25C 2.06 mWwPc Base Total Device Dissipation @ Tc = 25C Pp 1.2 Watts Derate above 26C 6.9 mwrc af 1 Emitter Operating and Storage Temperature Ty. Tstg C 1 -65to +200 Temperature Range GENERAL PURPOSE TRANSISTORS THERMAL CHARACTERISTICS iN Characteristic Symbol Max Unit PNP SILICO Thermal Resistance, Junction to Ambient Raja 486 C/W %*2N3251A is a Motorola Thermal! Resistance, Junction to Case Rec 146 CNW designated preferred device. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) L Characteristic L Symbol | Min L Max T Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) 2N3250, 2N3251 VIBRICEO - 40 _- Vde (ig = ~ 10 mAdc) 2N3251A 60 Collector-Base Breakdown Voltage 2N325

2N3251A | Unit C ; CASE 22-03, STYLE 1 ollector-Emitter Voltage VCEO -40 -60 Vde TO-18 (TO-206AA) Coliector-Base Voltage Vcso 50 -60 Vde Emitter-Base Voltage VERO -5.0 Vdc 3 Collector Collector Current Ic 200 mAdc Total Device Dissipation @ Ta = 25C Pp 0.36 Watt > Derate above 25C 2.06 mWw/c Base Total Device Dissipation @ Tc = 25C Pb 1.2 Watts Derate above 25C 6.9 mw 3 1 Emutter ; 9 a1 Operating and Storage Temperature Ths Tstg 65 to +200 Cc Temperature Range GENERAL PURPOSE TRANSISTORS THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PNP SILICON Thermal Resistance, Junction to Ambient RaJA 486 C/W *2N3251A is a Motorola Thermal Resistance, Junction to Case Rac 146 Ciw designated preferred device. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) 2N3250, 2N3251 V(BR)CEO 40 _ Vde (l = 10 mAdc) 2N3251A 60 Collector-Base Breakdown Voltage 2N3250, 2N3251 ViBRICBO

to comply with this revision shall be completed by 28 April 2002. INCH-POUND MIL-PRF-19500/323H 28 January 2002 SUPERSEDING MIL-PRF-19500/323G 22 June 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figures 1 (similar to TO-18), 2 (surface mount), and 3 (die) herein. 1.3 Maximum ratings. PT (1) TA = +25C VCBO VCEO VEBO IC TOP and TSTG RJA (1) W V dc V dc V dc mA dc C C/W 0.36 60 60 5.0 200 -65 to +200 417 (1) Derate linearly 2.4 mW/C above TA = +25C. 1.4 Primary elec

QF Quad Transistor Quad Ceramic Flat PNP Pack 60V 0.6A 100 300 10/0.15 200MHz LCC20 PNP 60V 0.6A 100 300 10/0.15 200MHz LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQLCC20 2N2907EX8CSM Quad Transistor 8 Transistor Array 1.9GHz 2N3209AQF Quad Transistor 2N3251AQF Quad Transistor 2N7334 2N7335 Quad MOSFET Quad MOSFET 2N7336 Array 2N918AQF Quad Transistor BC107QF Quad Transistor BC108QF Quad Transistor BC109QF Quad Transistor BC477QF Quad Transistor BC478QF Quad Transistor BC479QF Quad Transistor BCY58QF Quad Transistor BCY59QF Quad Transistor BCY70QF Quad Transistor BCY71QF Quad Transistor BCY72QF Quad Transistor BFX46QF Quad Transistor BFX48QF Quad Transistor BFY64QF Quad Transistor BFY90QF Quad Transistor FF2222AJ FF2222AJ-JQR-B Quad Transistor Quad Transistor Quad Ceramic Flat Pack Quad Ceramic Flat Pack 14 pin CERDIP 14 pin CERDIP 14 pin CERDIP Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Cerami

/ Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3250AUB 2N3251A 2N3251AUB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 200 0.36 1.2 -65 to +200 mAdc Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C (1) Operating & Storage Junction Temperature Range PT TJ, Tstg W C TO-39 (TO-205AD) THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Symbol RJC Max. Unit 150 C/W (1) Note: 1/ Consult 19500/323 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown

2N3251A | Unit Collector-Emitter Voltage VcEO 40 -60 Vde Collector-Base Voltage VcBo -50 60 Vde Emitter-Base Voltage VEBO -.0 Vde Collector Current Ic - 200 mAdc Total Device Dissipation @ Ta = 25C PD 0.36 Watt Derate above 25C 2.06 mW*C Total Device Dissipation @ Tc = 25C Pp 1.2 Watts Derate above 25C 69 mWwC Operating and Storage Temperature TJ. Tstg 65 to +200 C | _Temperature Range THERMAL CHARACTERISTICS L_ Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Raa 486 CAN Thermal Resistance, Junction to Case Rac 146 CW 2N3250 2N3251,A* CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 2 Base 3 1 Emitter an GENERAL PURPOSE TRANSISTORS PNP SILICON *2N3251A is a Motorola designated preferred device. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1} 2N3250, 2N3251 V(BRICEO - 40 _ Vde (l = 10 mAdc) 2N3251A - 60 Collector-Base Breakdown Voltage 2N3250,

2N3251A 2N3251AUB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 200 mAdc PT 0.36 1.2 W TJ, Tstg -65 to +175 C Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS TO-39 (TO-205AD) Parameters / Test Conditions Symbol Thermal Resistance, Junction-to-Case RJC (1) Max. Unit 150 C/W Note: 1/ Consult 19500/323 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Vdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc ICEX 20 Adc Collector-Base Cutoff Current VCB = 60Vdc VCB = 40Vdc ICBO 10 20 Adc Adc Emitter-Base Cutoff Current VEB = 5.0Vdc IEBO 10 Adc

2N3251A PNP Silicon Small-Signal Transistors .designed for general-purpose switching and amplifier applications CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, NY. 11778 (VEp = 3.0 Vde. Voge = 40 Vac) MAXIMUM RATINGS Rating Symbal Value Unit Coltector- Emitter Voltage VCEO 60 Vde Collector-Base Voltage VCBO 60 Vde Emitter-Base Vaitage VEBO 50 Vde Collector Current Is 200 mAdc Power Dissipation Pr @Ta=25C 0.36 Watts Derate above 25 C ; mw.'C Watts @1c=25C 69 ee Derate above 25-C CASE 22-03, STYLE 1 Operating Junction and Storage Ty. Tstg -65 to 200 G TO-206AA (TO-18) Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collectar-Emitter Breakdown Voltage!" : V(BR)CEO 60 - Vde {ig = 10 mAdc; Collector-Base Breakdown Valtage ViBR}CBO 60 a Vde tig = 10 Adc) Base-Emitter Voltage V(BRIEBO 5.0 _ Vde ile = 10 pAde) 4 Collector Cutoff Current ICEX i (VcE = 40 Vdc. VEBjoty = 3.0 Vdc! 20 nAdc (Voce = 40 Vde. Veg = 3.0 V

2N3251A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/323 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range Symbol Value Units VCEO VCBO VEBO IC PT 60 60 5.0 200 0.36 1.2 -65 to +175 Vdc Vdc Vdc mAdc W W 0 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.4 W/0C for TA > 250C 2) Derate linearly 8.0 W/0C for TC > 250C Symbol (1)(2) RJC Max. 417 Unit C/W 0 TO-39 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 40 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Voltage V

/ Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3250AUB 2N3251A 2N3251AUB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 200 0.36 1.2 -65 to +200 mAdc Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C (1) Operating & Storage Junction Temperature Range PT TJ, Tstg W C TO-39 (TO-205AD) THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Symbol RJC Max. Unit 150 C/W (1) Note: 1/ Consult 19500/323 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown

7 02037 02037 02037 10881 02037 02037 00039 02037 02037 04507 02037 02037 JEDEC MJE170 2N6520 2N6248 . MM4018 2N3867 MJE253 M PS H81 MPS-1-195 MJE371K(SEL) 2N3799 TIP36A TIP106 PN4888-5 2N5400 MJE251 2N3635 TIP-105 TIP-149 TIP-127 2N6109 D451-12 MPS-1-152 2N3251A 2N6490 72006 2N6609 M PS4356 M M4032 TIP-107 2N5415 D451-15 D451-111 TIP145 MJ11015 TIP42A M M BTH81 MJ11021 M M BT2907A 2N6437 BFQ-32 M D1130 M PS6534 TIP32C HDS60 2N5771 2N6491 TIP647 BFQ51 BCX18 MJE2901T 2N6420 2SB737 TN4030 M PSW56 A440 BD416 2N6554 M PSW55 2N3906(SEL) 2N4403 M M BTA55 MMBT3906 M M BT5087 2N2907A(SEL) M PSA76 2N6709 2N3468 2N5416(SEL) N E90115 M M BT4403 M M BT5401 LT5239 MJE5850 2N5679 Part Num. 1853-0587 1853-0588 1853-0589 1853-0590 1853-0594 1853-0595 1853-0597 1853-0599 1853-0608 1853-0609 1853-0610 1853-0611 1853-0612 1853-0613 1853-0614 1853-0616 1853-0617 1853-0620 1853-0621 1853-0622 1853-0624 1853-0625 1853-0626 1853-0629 1853-0630 1853-0631 1853-0632 1853-0633 1853-0634 1853-0635 1853-0636 1853-0637 1853-0

2N3251A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3250, 2N3251 series devices are silicon PNP transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC Thermal Resistance JA ELECTRICAL SYMBOL ICEV BVCBO BVCBO BVCEO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE 2N3250 2N3251 50 40 CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=40V, VEB=3.0V IC=10A (2N3250, 2N3251) 50 IC=10A (2N3250A, 2N3251A) 60 IC=10mA (2N3250, 2N3251) 40 IC=10mA (2N3250A, 2N3251A) 60 IE=10A 5.0 IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA 0.60

2N3251A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol Value Units VCEO VCBO VEBO IC 60 60 5.0 200 0.36 1.2 -65 to +175 Vdc Vdc Vdc mAdc W W 0 C PT TJ, Tstg TO-39* (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Ambient 1) Derate linearly 2.4 W/0C for TA > +250C 2) Derate linearly 8.0 W/0C for TC > +250C Symbol (1)(2) RJA Max. 417 Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 40 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc 6 Lake Street, Law