2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25 PD Total Power Dissipation @ Tcase= 25 TJ Junction Temperature TStg Storage Temperature range 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value Unit 80 V 140 V 7 V 1 A 0.8 Watts 5 200 C -65 to +200 C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N3019 2N

2N3020 Rating _ Symbol | 2N3020 | 2N3700 Unit CASE 79-04, STYLE 1 Collector-Emitter Voltage VCEO 80 80 Vdc TO-39 (TO-205 AD) 3 ' Collector-Base Voitage VcBo 140 140 Vde 2 - __ 3 Collector Emitter-Base Voltage _ VEBO 7.0 7.0 Vdc Collector Current Continuous Ic 1.0 1.0 Adc Total Device Dissipation @ Ta = 25C Pp os [| o5 | Watts Beco Derate above 25C 46 2.85 mWFC Total Device Dissipation @ Tc = 25C Pp 5.0 18 Watts 1 Emitter Derate above 25C ; : 28.6 10.6 mw/c Operating and Storage Junction Ty. Tstg -65 to +200 C 2N3700* Temperature Range _ CASE 22-03, STYLE 1 THERMAL CHARACTERISTICS a TO-18 (TO-206AA) sg ' 2N3019 Characteristic Symbol | 2N3020 2N3700 Unit GENERAL TRANSISTORS Thermal Resistance, Junction to Ambient | RgJA 217 350 CAV Thermal Resistance, Junction to Case_ ReJc 35 97 C NPN SILICON ELECTRICAL CHARACTERISTICS (Tp = 25C unless otherwise noted.} %*2N3019 and 2N3700 are Motorola designated preferred devices. [ Characteristic _ Symbol Min Max | Unit | OFF CHARACTERI

2N3020 2N3019 Rating Symbol | 2N3020 | 2N3700: Unit - ; CASE 79-04, STYLE 1 Collector-Emitter Voltage VcEO 80 80 Vde TO-39 (TO-205AD) Collector-Base Voltage VcBo 140 140 Vde Emitter-Base Voltage VEBo 7.0 7.0 Vdc 7 onestor Collector Current Continuous le 1.0 1.0 Adc Total Device Dissipation @ Ta = 25C Pp 0.8 0.5 Watts Bese Derate above 25C 4.6 2.85 mWw2N3020 2N3700 Unit GENERAL TRANSISTORS Thermal Resistance, Junction to Ambient | Rea 217 350 "CW Thermal Resistance, Junction to Case Rasc 35 97 CW NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.] %*2N3019 and 2N3700 are Motorola designated preferred devices. Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Br

2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25 C Power Dissipation@ Tc=25C Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VALUE UNITS VCEO VCBO VEBO ICM PD Tj Tstg 80 140 7 1 800 5 +200 -65 to +200 V V V A mW W C C Rth(j-a) Rth(j-c) 218.7 35 C/W C/W ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS BVCEO * IC=30mA,IB=0 80 V Collector Base Breakdown Voltage BVCBO IC=100A, IE=0 140 V Emitter Base Breakdown Voltage BVEBO IE=100A, IC =O 7 V Collector Emitter Breakdown Voltage Collector Leakage Current ICBO Emitter Leakage Current IEBO VCB=90V, IE=0 VCB=90V, IE

40 2N18376 2N2218 2N2186 D41E1 2N2351A 2N2221A 2N 1838 2N2218 2N2187 D4 1E1 ON2352 ON22210 2N1839 2N2218 2N2192 D40E5 2N2352A 2N2221A 2N1840 2N2218 2N2192A D4&0E5 2N2353 OND2214 2N 1866 D448 2N2192B D4&0E5 2N2353A 2N2221 2N1889 D4S0E7 2N2193 D4&0E7 ON2364 2N3020 2N1890 D40E7 2N2193A D4&0E7 2N23648 2N3020 2N1923 2N 1893 2N2193B8 D405? 2N23977 PN3250=-18 2N 1944 2N22 18 2N2194 2N2218A 2N2378 PN3250-18 2N 1943 2N3020 2N2194A 2N2218A 2N2380 2N2218A 2N1944 2N2219 2N2 1948 2N2218A 2N2380A 2N2218A 2N 1945 2N2219 2N2195 2N2218 2N2386 2N5019 2N1946 2N2219A 2N2195A 2N2218 2N2386A 2N5019 2N1953 2N22 18 2N21495B 2N2218 2N2389 2N1613 2N1958 2N3724 2N2197 D44C7 2N2390 2N1711 2N1958A 2N3724 2N2206 2N2369A 2N2391 PN3250-18 2N1959 2N3724 2N22 14 2N2368 2N2392 PN3250-18 2N1959A 2N3724 2N2216 2N3923 2N2393 2N2904 2N1972 D40E5 2N2217 2N2218 2N2394 2N2904 2N1973 D40E7 2N2218A D40E7 2N2395 2N2218 2N1974 D4&0E7 2N2219 D40E5 2N2396 2N2218 2N1975 D40N1 2N2220 2N2221 2N2397 2N2369A 2N 1986 D40E 1

2N3020 Rating Symbol | 2N3020 | 2N3700 Unit CASE 79-04, STYLE 1 , Collector-Emitter Voltage VcEO 80 80 Vde TO-39 (TO-205AD) 3 1 Collector-Base Voltage VcBO 140 140 Vdc 2 3 Collec Emitter-Base Voltage VEBO 7.0 7.0 Vde onlector Collector Current Continuous Ic 1.0 1.0 Adc Total Device Dissipation @ Ta = 25C Pp 0.8 05 Watts ene Derate above 25C 46 2.85 mWwerc Total Device Dissipation @ Tc = 25C Po 5.0 1.8 Watts 1 Emitter Derate above 25C 28.6 10.6 mwrc Operating and Storage Junction Ty, Tstg 65 to +200 Cc 2N3700* Temperature Range CASE 22-03, STYLE 1 THERMAL CHARACTERISTICS TO-18 (TO-206AA) 3 2N3019 Characteristic Symbol | 2N3020 2N3700 Unit GENERAL TRANSISTORS Thermal Resistance, Junction to Ambient | Raja 217 350 Cw Thermal Resistance, Junction to Case Rye 35 37 "CW NPN SILICON *2N3019 and 2N3700 are Motorola designated ELECTRICAL CHARACTERISTICS (Ta ~ 25C unless otherwise noted.) preterred devices. Characteristic | Symboi Min | Max Unit OFF CHARACTERISTICS Collector-Emitt

2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi- gned for high-current, high-frequency amplifier ap- plications. They feature high gain and low saturation voltages. TO-39 INTERNAL SCHEMATIC DIAGRAM Cc B NPN s- bay E ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VcBo Collector-base Voltage (l_ = 0) 140 Vv VocEO Collector-emitter Voltage (lp = 0) 80 Vv VeEBo Emitter-base Voltage (Ic = 0) 7 Vv le Collector Current mA Prot Total Power Dissipation at Tamp < 25 C 0.8 WwW at Tcase $ 25 C 5 W Tstg, Tj Storage and Junction Temperature 65 to 200 C January 1989 1/4 2N3019-2N3020 THERMAL DATA Rth j-case | Thermal Resistance Junction-case Max 35 C/W Rthj-amb | Thermal Resistance Junction-ambient Max 219 C/W ELECTRICAL CHARACTERISTICS (T.,,5 = 25 unless otherwise specified) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit IcBo Collector Cutoff Current (le = 0)

2N3017 | stn HFA | 3.33W/c {150 | 100 50 fo | 60} 150} 2.04 | 0.75 | 5.04 200M | T 2N3018 S| N HFA 25W | Cc | 150 100 50 |} 0 60 | 150 LOA 0.75 5.0A 200M | T 2N3019 S|N 8-189] RFA O.8W |) A | 200 140 80 | O | 100 | 300 | 0,15A 0.2 | O.1L5A 80 /E 100M | T 2N3020 S|N 8~189] RFA 0.8W } A ; 200 140 80] 0 40 | 120] 0.154 0.2 {0.154 30 |E 80M | T 2N3021 |S] P 7+99 | PHS 2sw|c | 175 30 30 {o] 20] 60] 1.0a 1.5 | 3.0A 60M | T 2N3022 stp 7-99 PHS 25W 1c 175 45 45 |90 20 60 LOA 1.5 3.04 60M | T 2N3023 $|P 7-99 PHS 25W |} c 4175 60 60 | 0 20 60 1.0A 1.5 3.0A 60M | T 2N3024 |S|P 7-99 | PHS 25w {Cc | 175 30 30/0 | 501180] 1.04 1.0] 3.0A 60M | T 2N3025 |S] P 7-99 | PHS 25w | c | 175 45 45 |o | 504180] 1.0A 1.0 { 3.04 60M | T 2N3026 |S|P 7-99 | PHS 25w | c | 175 60 60 }0 | 50/180] 1.04 1.0] 3.0A 60M | T 2N3027 thru Thyristors, see Table on Page 1-154 2N3032 2N3033 | s|N spp} 300M{A 1/175] 100 | 100]R 1.0] 100M 2N3034 SIN SPP 300M | A {175 70 70 |R 1.0 100M 2N3035 |S|N SPP | 300M | A } 175 50 50 ]R 1.0} 1OOM 2N3

2N3020 TO-39 Metal Can Package Designed For Use in General Purpose Amplifier And High Speed Switching Applications. These Transistors are Also suitable for High Current Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL VCEO Collector Emitter Voltage VCBO Collector Base Voltage VEBO Emitter Base Voltage ICM Collector Current PD Power Dissipation @ Ta=25C Power Dissipation@ Tc=25C Tj Junction Temperature T Storage Temperature stg THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BV * IC=30mA,IB=0 Collector Emitter Breakdown Voltage CEO VALUE 80 140 7 1 800 5 +200 -65 to +200 UNITS V V V A mW W C C 218.7 35 C/W C/W MIN 80 MAX UNITS V Collector Base Breakdown Voltage BVCBO IC=100A, IE=0 140 V Emitter Base Breakdown Voltage BVEBO IE=100A, IC =O 7 V Collector Leakage Current ICBO Emitter Leakage Current IEBO VCB=90V, IE=0 VCB=90V,

E121 a DGE 2N5337 3 MOTA | 2N1907 2N1973 BCX55-10 3 SIEG DE128 1 DGE | 2N1758 BUY6S a SGSI DE127 1 DGE 2N1893 1 PHIN BSS79C 3 SIEG 2N5786 3 RCA 2N2141 + LTE D42C7 a GESY | 2N1907A 2N3019 1 MOTA GES2218 a GESY BC394 3 SGSI DE121 3 DGE | 2N1886 2N1905 1 LTE 2N3020 1 PHIN GES2219A 3 GESY D40D4 3 GESY | 2N1759 2N2892 1 GSE DE127 3 DGE D40b8 1 GESY GES3053 3 GESY 2N1715 2N2143 1 LTE D44c8 1 GESY | 2N1908 DE128 1 DGE THC2218 a SPR 2N5681 1 MOTA DE121 3 DGE 2N6292 3 RCA DE128 1 DGE 2N1893 3a RCA THC2219A a SPR 04471 1 GESY | 2N1760 BD239A 3 RCA 2N1908A 2N4305 3 TRWS THC3053 a SPR D44T2 a GESY 2N2144 1 LTE BU407 a APX 2N1905 1 LTE BCX56-16 3 SIEG TN2218 3 NSC DE128 a DGE BDx92 1 PHIN ST44C8 a STI DE127 3 DGE D38H4 3 GESY TN2219A 3 NSC 2N1716 2N4905 3 RCA 2N1889 2N1923 D38H5 3 GESY TP2218 3 SPR 2N4237 1 MOTA BOW22A 3 SGSI 2N699 1 RCA 2N3498 1 MOTA D42T1 3 GESY TP2219A 3 SPR D40D7 1 GESY DE121 3 DGE BSw66 1 PHIN THC3498 a SPR THC3019 3 SPR 2N1987 2N5786 3 RCA 2N1761 D40D7 1 GESY | 2N1943 THC3020 3 SPR 2N69

CV10254 CV10254L CV10807 CV10807-O CV12253L CV12253L-O CV7062 CV7062-O CV7063 CV7064 CV7065 CV7065-O CV7341A CV7341A-O CV7342 CV7342A CV7342A-0 CV7343A CV7343A-O CV7345A PRODUCT 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2960 2N2961 2N2994 2N3019 2N3019RB 2N3020 2N3036 2N3036L 2N3053 2N3053A NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP PNP Status Polarity PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO39 (TO205AD) TO5 (TO205AA) TO39 (TO205AD) TO5 (TO205AA) TO39 (TO205AD) TO39 (TO205AD) TO5 (TO205AA) TO5 (TO205AA) TO5 (TO205AA) TO5 (TO205AA) TO5 (TO205AA) TO5 (TO205AA) TO5 (TO205AA) TO5 (TO

2218 3 NSC D4004 3 GESY TP930 3 SPR DE159 3 DGE DE129 3 DGE THC2221 a SPR TP2218 3 SPR 2N753 2N783 GES2906 3 GESY PN200 3 NSC THC2221A 3 SPR 2N731 2N2369A 1 MOTA 2N834 1 MOTA PN2906 3 NSC 2N870 TMPT2221 a SPR 2N2221 + MOTA SGSI 2N2368 1 PHIN THC2906 a SPA 2N3020 1 MOTA TMPT2221A a SPR 2N2221A 1 PHIN BSX20 + PHIN 2N3903 3 GESY TMPT2906 3 SPR BSX33 1 $GSI TP2221 a SPR DE123A 1 DGE PN2369 + NSC BCY56 a PHIN TP2906 a SPR 2N1893 3 RCA TP2221A 3 SPR BSS79B a SIEG PN2369A 3 NSC BSX20 3 SGS! | 2N859 2N2218A 3 PHIN 2N718 6SS81B 3 SIEG 2N754 DE123A 3 DGE 2N2906 1 MOTA 2N4305 a TRWS 2N2221A + PHIN GES222A 3 GESY 2N1893 1 SGSI MPS834 3 NSC DE159 3 DGE D38H4 3 GESY 2N4400 v NSC GES2221A 3 GESY BFY50 1 PHIN | 2N784 GES2906 3, GESY DE128 3 DGE DE123A 1 DGE PN2221 3 NSC 2N697 3 RCA 2N2368 1 PHIN PN2906 3 NSC THC3020 3 SPR THC718 1 SPR THC2221 a SPR 042Tt 3 GESY 2N3903 a GESY THG2906 3 SPR TN3020 3 NSC 8C337 3 PHIN THC2221A a SPR DE128 3 DGE DE123A 3 DGE TMPT2906 3 SPR 2N871 BSS79B a SIEG TMPT2221 3a SPR 2N755 2N

18A 2N1051 2N2218 2N1252 2N3724 2N1493 2N3923 2N1054 2N3923 2N1252A 2N3724 2N1505 2N2218 2N1055 2N3923 2N1253 2N3724 2N1506 2N2218 2N1059 AC 127 2N1253A 2N3724 2N1506A 2N221BA 2N1067 D&OE 4 2N1267 2N2369A 2N1507 2N2219 2N1068 D4&0E 1 2N1268 2N2369A 2N1508 2N3020 2N1069 D44C6 2N1269 2N2369A 2N1509 2N3020 2N1070 D44Ca 2N1270 2N2369A 2N1528 2N2218 2N 1074 2N2218 2N1271 2N2369A 2N 1564 2N 1893 2N1075 2N2218 2N1272 2N2369A 2N 1565 2N1893 2N1076 2N2218 2N1274 AC128 2N1566 2N1893 2N1077 2N2218 2N 1287 AC128 2N1566A 2N1893 2N 1081 2N2221 2N1287A AC128 2N1572 2N 1893 2N1082 2N2221 2N 1335 2N122BA 2N1573 2N 1893 2N 1084 D4305 2N1336 2N2218A 2N1574 2N1893 2N 1092 04201 2N1337 2N2218A 2N 1586 2N3946 2N1097 aAc128a 2N1338 2N2218A 2N1587 2N3946 2N1098 AC128 2N1339 2N 1893 2N1588 2N3946 2N1101 AC 127 2N1340 2N 1893 2N1589 2N3946 2N1102 AC127 2N1361 2N1893 2N1590 2N3946 2N1105 2N 1893 2N 1342 2N 1893 2N1591 2N3946 2N1116 2N3020 2N 1353 AC128 2N1592 2N3946 2N1117 2N 1893 2N1370 AC128 2N

2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V 10 ICBO VCB=90V, TA=150C 10 IEBO VEB=5.0V 10 BVCBO IC=100A 140 BVCEO IC=30mA 80 BVEBO IE=100A 7.0 VCE(SAT) IC=150mA, IB=15mA 0.2 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(SAT) IC=150mA, IB=15mA 1.1 hFE VCE=10V, IC=100A 50 90 hFE VCE=10V, IC=10mA hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=150mA, TA=-55C 40 hFE VCE=10V, IC=500mA 50 hFE VCE=10V, IC=1.0A 15 fT VCE=10V, IC=50mA, f=20MHz 100 Cob

2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 140 V 80 V V CBO Collector-base Voltage (I E = 0) V CEO Collector-emitter Voltage (I B = 0) V EBO Emitter-base Voltage (I C = 0) 7 V Collector Current 1 mA 0.8 5 W W - 65 to 200 C IC Pt o t T s t g, T j January 1989 Total Power Dissipation at T am b 25 C at T cas e 25 C Storage and Junction Temperature 1/4 2N3019-2N3020 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max C/W C/W 35 219 ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol Parameter I CBO Collector Cutoff Current (I E = 0) V CB = 90 V V CB = 90 V I E BO Emitter Cutoff C