2N2369A w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg JA JC CHARACTERISTICS: (TA=25C unless TEST CONDITIONS VCB=20V VCB=20V, TA=150C IC=10A IC=10A IC=10mA IE=10A IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA, TA=125C IC=30mA, IB=3.0mA IC=100mA, IB=10mA IC=10mA, IB=1.0mA IC=30mA, IB=3.0mA IC=100mA, IB=10mA VCE=1.0V, IC=10mA VCE=0.35V, IC=10mA, TA

2N2369A w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg JA JC CHARACTERISTICS: (TA=25C unless TEST CONDITIONS VCB=20V VCB=20V, TA=150C IC=10A IC=10A IC=10mA IE=10A IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA, TA=125C IC=30mA, IB=3.0mA IC=100mA, IB=10mA IC=10mA, IB=1.0mA IC=30mA, IB=3.0mA IC=100mA, IB=10mA VCE=1.0V, IC=10mA VCE=0.35V, IC=10mA, TA

Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB *ICES **ICEV (V) (V) (V) (mA) (V) MIN MIN MIN MAX hFE @ IC (mA) MIN @ VCE (V) MAX VCE (SAT) @ IC Cob (V) (mA) MAX fT NF ton toff (pF) (MHz) (dB) (ns) (ns) MAX MIN MAX MAX MAX 2N957 NPN RF/IF OSC 40 20 5.0 -- -- 45 -- 10 10 -- -- 6.0 200 -- -- -- 2N978 PNP AMPL/SWITCH 30 20 5.0 5.0 10 15 60 150 10 1.5 150 45 40 -- -- -- 2N995 PNP SAT SWITCH 20 15 4.0 0.005 15 35 140 20 1.0 0.2 20 10 100 -- 65 125 2N996 PNP SAT SWITCH 15 12 4.0 0.005 10 35 -- 20 1.0 0.3 60 10 100 -- -- -- 2N1991 PNP AMPL/SWITCH 30 20 5.0 5.0 10 15 60 150 10 1.5 150 45 40 -- -- -- 2N2205 NPN SAT SWITCH 25 12 3.0 0.025 15 20 -- 10 1.0 0.22 10 6.0 200 -- 40 75 2N2220 NPN AMPL/SWITCH 60 35 5.0 0.01 50 20 60 150 10 0.4 150 8.0 250 -- -- -- 2N2221A NPN AMPL/SWITCH 75 40 6.0 0.01 60 40 120 150 10 0.3 150 8.0 250 -- -- 285 285 2N2222A NPN AMPL/SWITCH 75 40 6.0 0.01 60 100 300 150 10 0.3 150 8.0 250 -- -- 2N2242 NPN SAT SWITCH 15 15 5.0 -- -- 40 120 10 1.0