6 = 1% tp = 1ms 7ZESIEG TI Fig.4 Test circuit for turn-off breakdown energy. 832 October ves (Silicon epitaxial power transistors ~ PHILIPS INTERNATIONAL 100 TIP42F; 42AF TIP42BF; 42CF M@@ 7110826 0043546 &T3 MPHIN 7Z21637.1 T-33-19 t.= 0.1 ms 10 TIP42 F TIP42AF TIP42BF TIP42CF bc -Voe () Region of permissible DC operation. Permissible extension for repetitive pulse operation. (1) Prot max and Poeak max lines (2) Second-breakdown limits. Fig.5 Safe Operating Area; Tm = 25 OC. October 1988 833TIP42F; 42AF TIP42BF; 42CF PHILIPS INTERNATIONAL SbE D MM 7220826 OO43547 73T MMPHIN | 7281016.1 T+33~) 9 100 Prot mex (%) 50 Q 0 50 50 00 1 Tmb (C) Fig.6 Total power dissipation. 100 50 20 10 0.01 0.1 Ig (Al Fig.7 DC current gain; -VcgE = 4 V; typical values. 834 October vos (egg Silicon epitaxial power transistors TIP42F; 42AF . _)\ _TIP42BF; 42CF PHILIPS INTERNATIONAL SbE D MM 7110826 0043548 &7b MMPHIN 7Z21415 4 2thj-h (K/W) 3 2 1 0 10-8 10-4 190-3 10-2 10-1 1 10 tp (s) Fig.8 Pulse power rating chart. 72
1BF; 41CF SE D = 741082 0043526 Tos ME PHIN SILICON EPITAXIAL POWER TRANSISTORS T-33-09Ff - PHILIPS INTERNATIONAL NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are TIP42F, TIP42AF, TIP42BF and TIP42CF. QUICK REFERENCE DATA Collector-base voltage (open emitter} VcBO max. Collector-emitter voltage (open base) VCcEO max. DC collector current ic max. 6 A Peak collector current lcm max. 10 A Total power dissipation up to Tp = 25 C Prot max. 32 W Junction temperature Tj max. 150 C DC current gain : = . = min. 15 Ic=3A;VcE=4V hFEe max. 5 MECHANICAL DATA Dimensions in mm Fig.1 SOT 186. . ig.1 r 10,2 max Pinning 5,7 max ney tilt a 1 = base 32 a9 2 = collector 3:0 Bi 0/5 > rr max 3 = emitter i | T 46 1 c - 7 4,0 7 7,9 } |_| 7,5 b | 47 max e 3,5 max 4 not tinned _ _ file 13,5 1,5 max) Jeep min 172 i 3 ' 190,44) + 09 1 L-ossma Fess the 4,3 > _ 7295293.1 | ( se 1991 813TIP41F; 41AF TIP41BF: 41CF PHILIPS INTERNATIONAL ShE D MM