TIP42A COMPLEMENTARY SILICON POWER TRANSISTOR Features COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE IMPROVED LINEARITY 3 Applications 1 GENERAL PURPOSE CIRCUITS AUDIO AMPLIFIER POWER LINEAR AND SWITCHING 2 TO-220 Description The TIP41A is a silicon base island technology NPN power transistor Jedec TO-220 plastic package with improved performances than the industry standard TIP41A that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42A. Internal Schematic Diagram Order Codes Part Number Marking Package Packing TIP41A TIP41A TO-220 TUBE TIP42A TIP42A TO-220 TUBE October 2005 rev.1 1/10 www.st.com 10 TIP42A 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Ratings Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitte-Base Voltage (IC = 0) 5 V Collector Cu
TIP42A/TIP42B/TIP42C PNP Epitaxial Silicon Transistor Features * Complementary to TIP41/TIP41A/TIP41B/TIP41C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP42 : TIP42A : TIP42B : TIP42C - 40 - 60 - 80 - 100 V V V V VCEO Collector-Emitter Voltage : TIP42 : TIP42A : TIP42B : TIP42C - 40 - 60 - 80 - 100 V V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A ICP Collector Current (Pulse) -10 A IB Base Current -2 A PC Collector Dissipation (TC=25C) 65 W Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C (c) 2008 Fairchild Semiconductor Corporation TIP42/TIP42A/TIP42B/TIP42C Rev. A www.fairchildsemi.com 1 TIP42/TIP42A/TIP42B/TIP42C -- PNP Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : TIP42 : TIP42A : TI
TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS Features *ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V *Epoxy Meets UL 94 V-0 @ 0.125 in *Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO 40 60 80 100 Vdc Collector-Base Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 60 80 100 Vdc VEB 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ Emitter-Base Voltage Collector Current- Continuous Peak Operating and Storage Junction, Temperature R
TIP42A COMPLEMENTARY SILICON POWER TRANSISTOR Features COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE IMPROVED LINEARITY 3 Applications 1 GENERAL PURPOSE CIRCUITS AUDIO AMPLIFIER POWER LINEAR AND SWITCHING 2 TO-220 Description The TIP41A is a silicon base island technology NPN power transistor Jedec TO-220 plastic package with improved performances than the industry standard TIP41A that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42A. Internal Schematic Diagram Order Codes Part Number Marking Package Packing TIP41A TIP41A TO-220 TUBE TIP42A TIP42A TO-220 TUBE October 2005 rev.1 1/10 www.st.com 10 TIP42A 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Ratings Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitte-Base Voltage (IC = 0) 5 V Collector Cu
4 typ 0.15 typ 3.0 3.0 65 742 TIP42B 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 BD244B 15 min 3.0 0.4 typ 0.15 typ 3.0 3.0 65 162 BD243C BD244C 15 min 3.0 0.4 typ 0.15 typ 3.0 3.0 65 162 TIP41C TIP42C 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 6.0 60 TIP41A TIP42A 80 TIP41B BD243B 7.0 NPN PNP 400/700 BUL146 14/34 0.5 1.75 (Note 10.) 0.15 (Note 10.) 3.0 14 typ 100 450/1000 MJE18006 14/34 0.5 3.2 (Note 10.) 0.13 (Note 10.) 3.0 14 typ 100 30 2N6288 50 8.0 @ IC Amp PD (Case) Watts @ 25C hFE Min/Max VCEO(sus) Volts Min (Note 11.) tf s Max fT MHz Min ts s Max ICCont Amps Max 100 Resistive Switching Page 263 531 2N6111 30/150 3.0 0.4 typ 0.15 typ 3.0 4.0 40 107 2N6109 30/150 2.5 0.4 typ 0.15 typ 3.0 4.0 40 107 2N6107 30/150 2.0 0.4 typ 0.15 typ 3.0 4.0 40 107 70 2N6292 150 BU407 30 min 1.5 0.75 5.0 10 60 214 200 BU406 30 min 1.5 0.75 5.0 10 60 214 60 2N6043 (Note 9.) 2N6040 (Note 9.) 1k/10k 4.0 1.5 typ 3.0 4.0 (Note 8.) 75 TIP100 (Note 9.) TIP105 (Note 9.) 1k/20k 4.0 (Note 8.) 80 BDX53B (Note 9.) BDX54B (
TIP42A VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- TIP41A, TIP42A = 80 Vdc (Min) -- TIP41B, TIP42B = 100 Vdc (Min) -- TIP41C, TIP42C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package TIP42B * TIP42C * *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIII
TIP42AG, TIP42BG, TIP42CG(PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. Features * Epoxy Meets UL 94 V-0 @ 0.125 in * These Devices are Pb-Free and are RoHS Compliant* 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG Symbol VCEO Value Unit Vdc 40 60 80 100 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 6.0 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg - 65 to +150 C ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Collector Current - Peak Operating and Storage Junction, Temperature Range *For additional information on our Pb-Free strategy and soldering det
BD240A BDW52C TIP2955 TIP2955 BD242A BD242B 2N6109 2N6107 TIP30C BD438 BD440 BD442 MJE350 2N3789 2N3790 TIP32C TIP30C TIP30B MJE350 MJE350 BDW52C TIP32C 2N5876 BD438 BD438 BD242B MJE350 MJE350 MJE210 TIP2955 2N4918 MJE350 MJE171 TIP32 BDW52B TIP32C TIP42C TIP42A TIP32 2N6052 2N6052 TIP2955 TIP42B MJE350 TIP42B MJE172 BD238 BD240B BD240B BDW52C TIP2955 TIP2955 BD242A BD242B 2N6109 2N6107 TIP30C BD438 BD440 BD442 MJE350 2N3790 2N3790 TIP32C TIP30C TIP30B MJE350 MJE350 BDW52C TIP32C BDW52C BD438 BD438 BD242B MJE350 MJE350 MJE210 TIP2955 2N4918 MJE350 MJE172 TIP32A BDW52C TIP32C TIP42C TIP42A TIP32A 2N6052 2N6052 TIP2955 TIP42B MJE350 TIP42B * Product in Development please contact your nearest Sales Office 12 SGS-THOMSON SGS-THOMSON NEAREST PREFERRED 2SA1326 2SA1329 2SA1357 2SAB77 2SB1020 2SB1024 2SB434 2SB435 2SB506 2SB507 2SB509 2SB511 2SB513 2SB514 2SB515 2SB518 2SB520 2SB521 2SB522 2SB523 2SB524 2SB526 2SB527 2SB528 2SB529 2SB531 2SB532 2SB536 2SB537 2SB538 2SB548 2SB549 2SB553 2SB55
TIP42A/TIP42B/TIP42C PNP Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complement to TIP41/TIP41A/TIP41B/TIP41C TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA=25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage : TIP42 : TIP42A : TIP42B : TIP42C - 40 - 60 - 80 - 100 V V V V VCEO Collector-Emitter Voltage : TIP42 : TIP42A : TIP42B : TIP42C - 40 - 60 - 80 - 100 V V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A ICP Collector Current (Pulse) -10 A IB Base Current -2 A PC Collector Dissipation (TC=25C) 65 W Collector Dissipation (TA=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C (c) 2009 Fairchild Semiconductor Corporation TIP42/TIP42A/TIP42B/TIP42C Rev. B0 www.fairchildsemi.com 1 TIP42/TIP42A/TIP42B/TIP42C -- PNP Epitaxial Silicon Transistor December 2009 TA=25C unless otherwise noted Symbol Parameter VCEO(sus)
TIP42A, TIP42B, TIP42C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP41 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIP42 -80 TIP42A -100 TIP42B V CBO -140 TIP42 -40 TIP42A TIP42B VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4.
TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS Features * ESD Ratings: * * Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in Pb-Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol Value Unit TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO 40 60 80 100 Vdc TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 60 80 100 Vdc Emitter-Base Voltage 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg - 65 to +150 C Symbol Max Unit Thermal Resistance, Junct
TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS Features * ESD Ratings: * * Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in Pb-Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol Value Unit TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO 40 60 80 100 Vdc TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 60 80 100 Vdc Emitter-Base Voltage 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg - 65 to +150 C Symbol Max Unit Thermal Resistance, Junct
TIP42A VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- TIP41A, TIP42A = 80 Vdc (Min) -- TIP41B, TIP42B = 100 Vdc (Min) -- TIP41C, TIP42C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package TIP42B * TIP42C * *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII
TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS Features * ESD Ratings: * * Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO 40 60 80 100 Vdc Collector-Base Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 60 80 100 Vdc VEB 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg - 65 to +150 C Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.67 C/W Thermal
TIP42AG, TIP42BG, TIP42CG(PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. Features * Epoxy Meets UL 94 V-0 @ 0.125 in * These Devices are Pb-Free and are RoHS Compliant* 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG Symbol VCEO Value Unit Vdc 40 60 80 100 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 6.0 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg - 65 to +150 C ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Collector Current - Peak Operating and Storage Junction, Temperature Range *For additional information on our Pb-Free strategy and soldering det